KR20070061565A - 변형된 채널을 갖는 이중 게이트 장치 - Google Patents

변형된 채널을 갖는 이중 게이트 장치 Download PDF

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Publication number
KR20070061565A
KR20070061565A KR1020077009634A KR20077009634A KR20070061565A KR 20070061565 A KR20070061565 A KR 20070061565A KR 1020077009634 A KR1020077009634 A KR 1020077009634A KR 20077009634 A KR20077009634 A KR 20077009634A KR 20070061565 A KR20070061565 A KR 20070061565A
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South Korea
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source
semiconductor
layer
semiconductor layer
gate
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KR1020077009634A
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English (en)
Korean (ko)
Inventor
부운-여 테안
매리엄 지 사다카
테드 알 화이트
알렉산더 엘 바
벤카트 알 콜라군타
비히-옌 구엔
빅터 에이치 바타니안
다 장
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프리스케일 세미컨덕터, 인크.
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Publication of KR20070061565A publication Critical patent/KR20070061565A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020077009634A 2004-09-29 2005-08-31 변형된 채널을 갖는 이중 게이트 장치 Withdrawn KR20070061565A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/952,676 2004-09-29
US10/952,676 US7067868B2 (en) 2004-09-29 2004-09-29 Double gate device having a heterojunction source/drain and strained channel

Publications (1)

Publication Number Publication Date
KR20070061565A true KR20070061565A (ko) 2007-06-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077009634A Withdrawn KR20070061565A (ko) 2004-09-29 2005-08-31 변형된 채널을 갖는 이중 게이트 장치

Country Status (5)

Country Link
US (1) US7067868B2 (https=)
EP (1) EP1797592A1 (https=)
JP (1) JP5147403B2 (https=)
KR (1) KR20070061565A (https=)
WO (1) WO2006039037A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150143254A (ko) * 2014-06-12 2015-12-23 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 핀형 전계효과 트랜지스터 구조체와 그 형성방법
US9490365B2 (en) 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US9490346B2 (en) 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060197129A1 (en) * 2005-03-03 2006-09-07 Triquint Semiconductor, Inc. Buried and bulk channel finFET and method of making the same
US7446350B2 (en) * 2005-05-10 2008-11-04 International Business Machine Corporation Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer
JP4256381B2 (ja) * 2005-11-09 2009-04-22 株式会社東芝 半導体装置
US7279758B1 (en) * 2006-05-24 2007-10-09 International Business Machines Corporation N-channel MOSFETs comprising dual stressors, and methods for forming the same
US20080293192A1 (en) * 2007-05-22 2008-11-27 Stefan Zollner Semiconductor device with stressors and methods thereof
KR100848242B1 (ko) * 2007-07-11 2008-07-24 주식회사 동부하이텍 반도체 소자 및 반도체 소자의 제조 방법
JP5164745B2 (ja) * 2007-09-03 2013-03-21 株式会社半導体エネルギー研究所 記憶装置
US7671418B2 (en) * 2007-09-14 2010-03-02 Advanced Micro Devices, Inc. Double layer stress for multiple gate transistors
US8007727B2 (en) 2008-05-30 2011-08-30 Intel Corporation Virtual semiconductor nanowire, and methods of using same
US20100279479A1 (en) * 2009-05-01 2010-11-04 Varian Semiconductor Equipment Associates, Inc. Formation Of Raised Source/Drain On A Strained Thin Film Implanted With Cold And/Or Molecular Carbon
US8053318B2 (en) * 2009-06-25 2011-11-08 International Business Machines Corporation FET with replacement gate structure and method of fabricating the same
US8354719B2 (en) * 2010-02-18 2013-01-15 GlobalFoundries, Inc. Finned semiconductor device with oxygen diffusion barrier regions, and related fabrication methods
KR20130036739A (ko) 2010-04-09 2013-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체 메모리 장치
JP5592281B2 (ja) * 2011-01-05 2014-09-17 猛英 白土 半導体装置及びその製造方法
US8803233B2 (en) * 2011-09-23 2014-08-12 International Business Machines Corporation Junctionless transistor
JP6050034B2 (ja) * 2012-06-12 2016-12-21 猛英 白土 半導体装置及びその製造方法
US8823059B2 (en) * 2012-09-27 2014-09-02 Intel Corporation Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
US8957476B2 (en) 2012-12-20 2015-02-17 Intel Corporation Conversion of thin transistor elements from silicon to silicon germanium
US9559181B2 (en) 2013-11-26 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device with buried sige oxide
US9147682B2 (en) 2013-01-14 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Fin spacer protected source and drain regions in FinFETs
US9087689B1 (en) 2014-07-11 2015-07-21 Inoso, Llc Method of forming a stacked low temperature transistor and related devices
US8916872B1 (en) 2014-07-11 2014-12-23 Inoso, Llc Method of forming a stacked low temperature diode and related devices
KR102255174B1 (ko) 2014-10-10 2021-05-24 삼성전자주식회사 활성 영역을 갖는 반도체 소자 및 그 형성 방법
CN108141215B9 (zh) 2015-07-29 2020-11-06 电路种子有限责任公司 互补电流场效应晶体管装置及放大器
WO2017019978A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices
US10514716B2 (en) 2015-07-30 2019-12-24 Circuit Seed, Llc Reference generator and current source transistor based on complementary current field-effect transistor devices
US10491177B2 (en) 2015-07-30 2019-11-26 Circuit Seed, Llc Multi-stage and feed forward compensated complementary current field effect transistor amplifiers
CN111816610A (zh) 2015-12-14 2020-10-23 电路种子有限责任公司 场效应晶体管
KR102396806B1 (ko) 2017-08-31 2022-05-12 마이크론 테크놀로지, 인크 반도체 장치, 하이브리드 트랜지스터 및 관련 방법
CN111052395A (zh) 2017-08-31 2020-04-21 美光科技公司 半导体装置、晶体管以及用于接触金属氧化物半导体装置的相关方法
US11764303B2 (en) 2018-03-22 2023-09-19 Intel Corporation Thin film transistors having double gates
US11177366B2 (en) 2020-01-13 2021-11-16 International Business Machines Corporation Gate induced drain leakage reduction in FinFETs
CN121442736B (zh) * 2025-12-29 2026-04-21 合肥晶合集成电路股份有限公司 半导体器件及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3450547B2 (ja) * 1995-09-14 2003-09-29 株式会社東芝 半導体装置およびその製造方法
JP3383154B2 (ja) * 1996-06-20 2003-03-04 株式会社東芝 半導体装置
US6124627A (en) * 1998-12-03 2000-09-26 Texas Instruments Incorporated Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region
US7312485B2 (en) 2000-11-29 2007-12-25 Intel Corporation CMOS fabrication process utilizing special transistor orientation
JP3782021B2 (ja) * 2002-02-22 2006-06-07 株式会社東芝 半導体装置、半導体装置の製造方法、半導体基板の製造方法
JP2003318198A (ja) * 2002-04-25 2003-11-07 Sanyo Electric Co Ltd 半導体装置の製造方法
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US6638802B1 (en) * 2002-06-20 2003-10-28 Intel Corporation Forming strained source drain junction field effect transistors
WO2004081982A2 (en) * 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
US6838322B2 (en) * 2003-05-01 2005-01-04 Freescale Semiconductor, Inc. Method for forming a double-gated semiconductor device
US7303949B2 (en) * 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150143254A (ko) * 2014-06-12 2015-12-23 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 핀형 전계효과 트랜지스터 구조체와 그 형성방법
US9490365B2 (en) 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US9490346B2 (en) 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US9502538B2 (en) 2014-06-12 2016-11-22 Taiwan Semiconductor Manufacturing Co., Ltd Structure and formation method of fin-like field effect transistor
US10014224B2 (en) 2014-06-12 2018-07-03 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US10037921B2 (en) 2014-06-12 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US10727137B2 (en) 2014-06-12 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor

Also Published As

Publication number Publication date
JP2008515224A (ja) 2008-05-08
EP1797592A1 (en) 2007-06-20
US7067868B2 (en) 2006-06-27
JP5147403B2 (ja) 2013-02-20
US20060065927A1 (en) 2006-03-30
WO2006039037A1 (en) 2006-04-13

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