KR20070039620A - 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘 - Google Patents
산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘 Download PDFInfo
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- KR20070039620A KR20070039620A KR1020077006547A KR20077006547A KR20070039620A KR 20070039620 A KR20070039620 A KR 20070039620A KR 1020077006547 A KR1020077006547 A KR 1020077006547A KR 20077006547 A KR20077006547 A KR 20077006547A KR 20070039620 A KR20070039620 A KR 20070039620A
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
Description
Claims (9)
- 단결정 잉곳을 생성하기 위한 결정 인상기에 있어서,용융된 반도체 원 재료를 보유하는 도가니;상기 도가니와 열 소통되어, 상기 도가니에 의해 보유되는 상기 반도체 원 재료를 용융시키는 데에 충분한 온도로 상기 도가니를 가열하는 가열기;상기 도가니 위에 배치되어, 상기 도가니에 의해 보유되는 상기 용융된 재료로부터 상기 잉곳을 인상하는 인상 기구;상기 도가니에 의해 보유되는 상기 용융된 원 재료 위에 배치되며, 상기 잉곳이 상기 용융된 재료로부터 인상될 때 상기 잉곳을 감싸기 위한 크기 및 형상을 갖는 중심 개구를 가지며, 상기 결정 인상기 내에서 상기 잉곳이 상기 원 재료로부터 상방으로 인상될 때 대체적으로 상기 잉곳과 상기 도가니 사이에 삽입되는 열 차폐 어셈블리; 및상기 결정 인상기 내에서 상기 열 차폐 어셈블리 위에 배치되어, 상기 잉곳이 상기 결정 인상기 내에서 상기 열 차폐 어셈블리 위로 인상될 때, 상기 잉곳을 더 냉각시키고, 상기 잉곳이 상기 결정 인상기 내에서 인상될 때, 상기 잉곳을 감싸기 위한 크기 및 형상을 갖는 중심 개구를 갖는 냉각 시스템을 포함하는 결정 인상기.
- 제1항에 있어서, 상기 냉각 시스템은, 결정 인상기 하우징 내의 뷰 포 트(view port)를 통해 상기 잉곳을 관찰하는 데에 충분한 거리만큼 상기 열 차폐 어셈블리의 상단 위에 축방향으로 이격된 저부를 갖는 결정 인상기.
- 제1항 또는 제2항에 있어서, 상기 냉각 시스템은, 상기 냉각 시스템과 상기 열 차폐 어셈블리의 사이에, 그리고 상기 도가니 위에 공급 튜브를 배치하기에 충분한 거리만큼 상기 열 차폐 어셈블리의 상단 위에 축방향으로 이격된 저부를 갖는 결정 인상기.
- 제1항 또는 제2항에 있어서, 상기 냉각 시스템은, 내부 챔버를 정의하는 하우징, 및 상기 하우징의 적어도 일부분과 밀착하여 상기 챔버 내에 배치되어 상기 하우징과의 사이에서의 전도성 열 전달을 허용하는 냉각 튜브를 포함하고,상기 냉각 튜브는 냉각 유체의 공급원과 유체 소통되어 냉각 유체를 받아들이는 입구 및 상기 냉각 튜브로부터 냉각 유체를 배출시키는 출구를 갖고,냉각 유체를 상기 냉각 튜브로부터 상기 챔버 내로 배출시키기 위해, 상기 냉각 튜브의 출구는 대체적으로 상기 내부 챔버 내에 존재하는 결정 인상기.
- 제4항에 있어서, 상기 냉각 튜브는 코일 구성으로 이루어져 있고, 상기 냉각 튜브의 턴(turn)은 챔버 내에서 대체적으로 아래를 향해 나선형의 형태이며,상기 냉각 튜브로부터 상기 하우징의 상기 저부에 대체적으로 인접한 상기 하우징의 상기 내부 챔버로 배출되도록 냉각 유체가 상기 하우징의 상단에 대체적 으로 인접한 상기 냉각 튜브에서 받아들여지고, 상기 냉각 튜브를 통해 아래를 향하게 되도록, 상기 냉각 튜브는, 상기 하우징의 최상단에 대체적으로 인접하여 배치된 입구 및 상기 하우징의 상기 저부에 대체적으로 인접하여 배치된 출구를 가지며,상기 냉각 튜브와 상기 하우징 사이의 밀착 관계는, 대체적으로 상기 냉각 튜브로부터 배출된 냉각 유체를 위한 복귀 흐름 경로를 정의하여, 상기 냉각 튜브로부터 상기 내부 챔버로 배출된 냉각 유체가 상기 챔버 내에서 상기 하우징의 상단을 향해 위쪽으로 흐르게 하는 결정 인상기.
- 제5항에 있어서, 상기 냉각 시스템은, 상기 하우징의 상기 내부 챔버 내에서 상기 하우징의 상기 저부에 연결되는 배플(baffle)을 더 포함하며,상기 배플은, 상기 냉각 튜브의 상기 출구로부터 배출된 냉각 유체가, 상기 냉각 튜브를 통해 아래를 향하여 나선형으로 움직이는 냉각 유체의 흐름의 방향에 반대되는 방향으로, 상기 챔버 내에서 상기 복귀 흐름 경로를 따라 위쪽으로 흐르게 하기 위해, 상기 냉각 튜브의 상기 출구에 대체적으로 인접하여 배치되는 결정 인상기.
- 제6항에 있어서, 상기 하우징은 상기 냉각 튜브의 상기 입구와 상기 냉각 유체의 공급원 사이에 유체 소통을 제공하고, 상기 냉각 시스템 하우징으로부터 상기 챔버 내로 냉각 유체를 배출시키는 개구를 포함하는 결정 인상기.
- 제5항에 있어서, 상기 냉각 시스템은, 상기 결정 인상기 상에 상기 냉각 시스템을 실장하기 위한 어댑터 링을 더 포함하고,상기 어댑터 링은, 상기 냉각 시스템 하우징에 대하여 반경 방향으로 외향 연장하며 상기 결정 인상기에 상기 냉각 시스템을 고정시키도록 되어 있는 플랜지 부재를 포함하고,상기 플랜지 부재는, 상기 냉각 유체의 공급원과 유체 소통되며, 상기 냉각 시스템 내로 냉각 유체를 받아들이기 위해 상기 냉각 튜브의 입구와 유체 소통되는 입구, 및 상기 냉각 시스템으로부터 냉각 유체를 배출시키기 위해 상기 하우징의 상기 내부 챔버와 유체 소통되는 출구를 갖는 결정 인상기.
- 제8항에 있어서, 상기 플랜지 부재는, 상기 하우징의 상기 내부 챔버와 유체 소통되어 냉각 유체를 상기 플랜지 부재 내로 받아들여 상기 플랜지 부재를 냉각시키고 상기 냉각 시스템으로부터 냉각 유체를 배출시키기 위해 냉각 유체를 상기 출구로 향하게 하는 플리넘(plenum)을 더 포함하는 결정 인상기.
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US26441501P | 2001-01-26 | 2001-01-26 | |
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KR1020037009878A KR100854186B1 (ko) | 2001-01-26 | 2002-01-22 | 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘 |
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JP (2) | JP4439810B2 (ko) |
KR (2) | KR100805518B1 (ko) |
CN (2) | CN100348782C (ko) |
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KR101446720B1 (ko) * | 2013-02-14 | 2014-10-06 | 주식회사 엘지실트론 | 단결정 잉곳 제조 장치 |
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EP1688519A2 (en) | 2006-08-09 |
JP2009029703A (ja) | 2009-02-12 |
EP1356139A2 (en) | 2003-10-29 |
US20020100410A1 (en) | 2002-08-01 |
US6846539B2 (en) | 2005-01-25 |
JP2005506261A (ja) | 2005-03-03 |
KR100854186B1 (ko) | 2008-08-26 |
US7217320B2 (en) | 2007-05-15 |
WO2002059400A3 (en) | 2002-11-21 |
DE60213759D1 (de) | 2006-09-21 |
CN101230482A (zh) | 2008-07-30 |
EP1356139B1 (en) | 2006-08-09 |
EP2295619A1 (en) | 2011-03-16 |
WO2002059400A2 (en) | 2002-08-01 |
CN1500159A (zh) | 2004-05-26 |
US20050150445A1 (en) | 2005-07-14 |
JP4439810B2 (ja) | 2010-03-24 |
EP1688519A3 (en) | 2007-10-17 |
CN100348782C (zh) | 2007-11-14 |
KR20030086990A (ko) | 2003-11-12 |
KR100805518B1 (ko) | 2008-02-20 |
JP4644729B2 (ja) | 2011-03-02 |
DE60213759T2 (de) | 2006-11-30 |
EP2295619B1 (en) | 2014-04-23 |
TWI222666B (en) | 2004-10-21 |
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