KR20070014152A - 금속을 갖는 게이트 전극을 형성하는 방법 - Google Patents

금속을 갖는 게이트 전극을 형성하는 방법 Download PDF

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Publication number
KR20070014152A
KR20070014152A KR1020067021698A KR20067021698A KR20070014152A KR 20070014152 A KR20070014152 A KR 20070014152A KR 1020067021698 A KR1020067021698 A KR 1020067021698A KR 20067021698 A KR20067021698 A KR 20067021698A KR 20070014152 A KR20070014152 A KR 20070014152A
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South Korea
Prior art keywords
metal layer
suppressor
region
transistor
layer
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KR1020067021698A
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English (en)
Korean (ko)
Inventor
올르분미 오. 아데투투
레이네 엠. 미첼슨
캐쓰린 씨. 유
로버트 이. 조네스 주니어
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프리스케일 세미컨덕터, 인크.
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Publication of KR20070014152A publication Critical patent/KR20070014152A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10D64/666—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum the conductor further comprising additional layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Composite Materials (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1020067021698A 2004-04-19 2005-03-22 금속을 갖는 게이트 전극을 형성하는 방법 Withdrawn KR20070014152A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/827,202 US7030001B2 (en) 2004-04-19 2004-04-19 Method for forming a gate electrode having a metal
US10/827,202 2004-04-19

Publications (1)

Publication Number Publication Date
KR20070014152A true KR20070014152A (ko) 2007-01-31

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Application Number Title Priority Date Filing Date
KR1020067021698A Withdrawn KR20070014152A (ko) 2004-04-19 2005-03-22 금속을 갖는 게이트 전극을 형성하는 방법

Country Status (6)

Country Link
US (1) US7030001B2 (enExample)
EP (1) EP1776715B1 (enExample)
JP (1) JP4757867B2 (enExample)
KR (1) KR20070014152A (enExample)
CN (1) CN100437939C (enExample)
WO (1) WO2005106938A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100903383B1 (ko) * 2007-07-31 2009-06-23 주식회사 하이닉스반도체 일함수가 조절된 게이트전극을 구비한 트랜지스터 및 그를구비하는 메모리소자
KR101366484B1 (ko) * 2011-12-16 2014-02-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 고유전율 금속 게이트 기술을 위한 향상된 게이트 교체 공정
US10396309B2 (en) 2015-11-30 2019-08-27 Lg Display Co., Ltd. Display device and fabricating method thereof

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KR100639073B1 (ko) * 2005-05-10 2006-10-30 한국과학기술원 선택적 다마신을 이용한 반도체 금속 배선의 형성방법
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JP4557879B2 (ja) * 2005-12-09 2010-10-06 株式会社東芝 半導体装置及びその製造方法
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US7579282B2 (en) * 2006-01-13 2009-08-25 Freescale Semiconductor, Inc. Method for removing metal foot during high-k dielectric/metal gate etching
US7445976B2 (en) * 2006-05-26 2008-11-04 Freescale Semiconductor, Inc. Method of forming a semiconductor device having an interlayer and structure therefor
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KR100843230B1 (ko) * 2007-01-17 2008-07-02 삼성전자주식회사 금속층을 가지는 게이트 전극을 구비한 반도체 소자 및 그제조 방법
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JP7101551B2 (ja) 2018-07-02 2022-07-15 東京エレクトロン株式会社 選択的に対象膜を形成する方法およびシステム
JP7109397B2 (ja) 2019-03-13 2022-07-29 東京エレクトロン株式会社 成膜方法
JP2021044534A (ja) 2019-09-05 2021-03-18 東京エレクトロン株式会社 成膜方法
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KR100903383B1 (ko) * 2007-07-31 2009-06-23 주식회사 하이닉스반도체 일함수가 조절된 게이트전극을 구비한 트랜지스터 및 그를구비하는 메모리소자
KR101366484B1 (ko) * 2011-12-16 2014-02-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 고유전율 금속 게이트 기술을 위한 향상된 게이트 교체 공정
US10396309B2 (en) 2015-11-30 2019-08-27 Lg Display Co., Ltd. Display device and fabricating method thereof

Also Published As

Publication number Publication date
EP1776715A4 (en) 2009-05-06
CN100437939C (zh) 2008-11-26
JP2007533156A (ja) 2007-11-15
CN1947230A (zh) 2007-04-11
US7030001B2 (en) 2006-04-18
EP1776715A1 (en) 2007-04-25
WO2005106938A1 (en) 2005-11-10
US20050233562A1 (en) 2005-10-20
EP1776715B1 (en) 2013-06-19
JP4757867B2 (ja) 2011-08-24

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