JP2007533156A - 金属からなるゲート電極を形成するための方法 - Google Patents
金属からなるゲート電極を形成するための方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 130
- 239000002184 metal Substances 0.000 title claims abstract description 130
- 238000000034 method Methods 0.000 title claims description 68
- 230000000903 blocking effect Effects 0.000 claims abstract description 76
- 239000010410 layer Substances 0.000 claims description 219
- 239000000463 material Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 239000013545 self-assembled monolayer Substances 0.000 claims description 4
- 150000001282 organosilanes Chemical class 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000002094 self assembled monolayer Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 39
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 21
- 239000007769 metal material Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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Abstract
Description
当業者であれば、これらの図における構成要素が説明を簡単かつ明瞭にするために示され、そして必ずしも寸法通りには描かれていないことが分かるであろう。例えば、これらの図における幾つかの構成要素の寸法を他の構成要素に対して誇張して描いて本発明の実施形態を理解し易くしている。
Claims (39)
- 第1金属層をウェハの第2領域のゲート誘電体の上ではなく、ウェハの第1領域のゲート誘電体の上に選択的に堆積させる工程と、
第2金属層を第2領域のゲート誘電体の上に堆積させる工程と、
第1金属層により形成される構造物を有した、第1トランジスタの第1ゲート電極積層構造を第1領域に形成する工程と、
第2金属層により形成される構造物を有する、第2トランジスタの第2ゲート電極積層構造を第2領域に形成する工程とを備える、トランジスタの製造方法。 - 第1トランジスタはPMOSトランジスタであり、第2トランジスタはNMOSトランジスタである、請求項1記載の方法。
- 第1トランジスタはNMOSトランジスタであり、第2トランジスタはPMOSトランジスタである、請求項1記載の方法。
- 第2金属層を堆積させる処理では更に、第2金属層を第1領域の第1金属層の上に堆積させ、
第1ゲート電極積層構造は第2金属層により形成される構造を第1金属層の上に含む、請求項1記載の方法。 - 阻止構造を第2領域のゲート誘電体の上に形成する工程をさらに備え、前記阻止構造により、第1金属層が第2領域のゲート誘電体の上に堆積するのを阻止する、請求項1記載の方法。
- 阻止構造による阻止は、核形成サイトが第2領域のゲート誘電体の上に形成されるのを阻止することにより行なわれる、請求項5記載の方法。
- 阻止構造は自己組織化単分子層であることを特徴とする、請求項5記載の方法。
- 阻止構造は有機シランを含む、請求項5記載の方法。
- 阻止構造はメチル基を含む、請求項5記載の方法。
- 阻止構造はメタクリレート系ポリマーを含む、請求項5記載の方法。
- 阻止構造は感光性ポリマーを含む、請求項5記載の方法。
- 阻止構造を形成する処理では更に、阻止構造を第1領域のゲート誘電体の上ではなく、第2領域のゲート誘電体の上に選択的に形成する、請求項5記載の方法。
- 阻止構造を選択的に形成する処理では、刻印を押し付けることによって阻止構造を形成する、請求項12記載の方法。
- 阻止構造を選択的に形成する処理では、阻止構造の材料を印刷押し付けによって塗布する、請求項13記載の方法。
- 阻止構造の材料を印刷押し付けによって塗布する処理では、ウェハに阻止構造材料層を有する刻印マスクを、当該マスクの内、第2領域に対応する位置で押し付ける、請求項14記載の方法。
- マスクの前記位置はマスクの隆起部分である、請求項15記載の方法。
- 第1金属層を堆積させた後に、かつ第2金属層を堆積させる前に、阻止構造を無効にする工程をさらに備える、請求項5記載の方法。
- 阻止構造を無効にする工程では、阻止構造を除去する、請求項17記載の方法。
- 阻止構造を無効にする工程では更に、ウェハを100℃以上に加熱する、請求項17記載の方法。
- 阻止構造を無効にする工程では更に、阻止構造をプラズマ処理する、請求項17記載の方法。
- 阻止構造を無効にする処理では更に、阻止構造をプラズマエッチングする、請求項17記載の方法。
- 阻止構造を無効にする工程では更に、阻止構造に紫外(UV)光を照射する、請求項17記載の方法。
- 第1金属層は、タンタルシリコン窒化物、炭化タンタル、金属ホウ化物、金属シリコン窒化物、及び金属炭化物の内の一つを含む、請求項1記載の方法。
- 第1金属層は、窒化チタン、イリジウム、酸化イリジウム、ルテニウム、酸化ルテニウム、及び窒化タンタルの内の一つを含む、請求項1記載の方法。
- 第1金属層は、原子層堆積(ALD)プロセスを使用して選択的に堆積させる、請求項1記載の方法。
- 第1金属層は、化学気相成長(CVD)プロセスを使用して選択的に堆積させる、請求項1記載の方法。
- ポリシリコン層を第1領域の第1金属層の上に、かつポリシリコン層を第2領域の第2金属層の上に形成する工程をさらに備え、
第1ゲート電極積層構造は、ポリシリコン層により形成される構造を第1領域の第1金属層の上に備え、
第2ゲート電極積層構造は、ポリシリコン層により形成される構造を第2領域の第2金属層の上に備える、請求項1記載の方法。 - 第1金属層は第1の仕事関数を有し、かつ第2金属層は第2の仕事関数を有し、第1の仕事関数は第2の仕事関数とは異なる、請求項1記載の方法。
- 阻止構造をウェハの第2領域の誘電体の上ではなく、ウェハの第1領域の誘電体の上に選択的に形成する工程と、
金属層を第2領域の誘電体の上に選択的に堆積させ、阻止構造によって、金属層が第1領域の誘電体の上に堆積するのを阻止する工程と、
金属層により形成される構造物を備えた、トランジスタのゲート電極積層構造を第2領域に形成する工程とを備える、トランジスタの製造方法。 - 第2金属層を第1領域の誘電体の上に堆積させる工程と、
第2金属層により形成される構造物を備えた、第2トランジスタの第2ゲート電極積層構造をウェハの第1領域に形成する工程とをさらに備える、請求項29記載の方法。 - 金属層を堆積させた後に、かつ第2金属層を堆積させる前に、阻止構造を無効にする工程をさらに備える、請求項30記載の方法。
- 金属層を堆積させた後に、かつゲート電極積層構造を形成する前に、阻止構造を無効にする工程をさらに備える、請求項29記載の方法。
- 阻止構造はメチル基を含む、請求項29記載の方法。
- 阻止構造は有機シランを含む、請求項29記載の方法。
- 阻止構造は自己組織化単分子層として特徴付けられる、請求項29記載の方法。
- 阻止構造を選択的に形成する処理では、刻印を押し付けることにより阻止構造を形成する、請求項29記載の方法。
- 阻止構造を選択的に形成する処理では、阻止構造の材料を印刷押し付けによって塗布する、請求項29記載の方法。
- 阻止構造をウェハの第2領域のゲート誘電体の上ではなく、ウェハの第1領域のゲート誘電体の上に選択的に形成する工程と、
原子層堆積プロセスを使用して、第1金属層が第1領域のゲート誘電体の上に堆積するのを阻止しながら、第1金属層を第2領域のゲート誘電体の上に選択的に堆積させる工程と、
第2金属層を第1領域のゲート誘電体の上に堆積させる工程と、
第2金属層により形成される構造物を備えた、第1トランジスタの第1ゲート電極積層構造を第1領域に形成する工程と、
第1金属層により形成される構造物を備えた、第2トランジスタの第2ゲート電極積層構造を第2領域に形成する工程とを備える、トランジスタの製造方法。 - 第1トランジスタ及び第2トランジスタのソース/ドレイン領域を形成する工程をさらに備える、請求項38記載の方法。
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US10/827,202 | 2004-04-19 | ||
US10/827,202 US7030001B2 (en) | 2004-04-19 | 2004-04-19 | Method for forming a gate electrode having a metal |
PCT/US2005/009620 WO2005106938A1 (en) | 2004-04-19 | 2005-03-22 | Method for forming a gate electrode having a metal |
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JP4757867B2 (ja) | 2011-08-24 |
KR20070014152A (ko) | 2007-01-31 |
EP1776715A1 (en) | 2007-04-25 |
CN1947230A (zh) | 2007-04-11 |
US7030001B2 (en) | 2006-04-18 |
EP1776715A4 (en) | 2009-05-06 |
WO2005106938A1 (en) | 2005-11-10 |
CN100437939C (zh) | 2008-11-26 |
EP1776715B1 (en) | 2013-06-19 |
US20050233562A1 (en) | 2005-10-20 |
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