KR20060107305A - 발광다이오드 - Google Patents
발광다이오드 Download PDFInfo
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- KR20060107305A KR20060107305A KR1020060029355A KR20060029355A KR20060107305A KR 20060107305 A KR20060107305 A KR 20060107305A KR 1020060029355 A KR1020060029355 A KR 1020060029355A KR 20060029355 A KR20060029355 A KR 20060029355A KR 20060107305 A KR20060107305 A KR 20060107305A
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F7/00—Signs, name or number plates, letters, numerals, or symbols; Panels or boards
- G09F7/18—Means for attaching signs, plates, panels, or boards to a supporting structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- G09F15/005—Boards, hoardings, pillars, or like structures for notices, placards, posters, or the like planar structures comprising one or more panels for orientation or public information
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- G09F15/0087—Boards, hoardings, pillars, or like structures for notices, placards, posters, or the like including movable parts, e.g. movable by the wind
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- G—PHYSICS
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- G09F7/00—Signs, name or number plates, letters, numerals, or symbols; Panels or boards
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (16)
- 주면(15u)을 갖는 기판(15)과,상기 주면 상에 배치된 발광다이오드 소자(16)와,상기 발광다이오드 소자가 상기 주면으로부터 돌출하는 독립적인 볼록부로서 이루어지게 하도록, 상기 발광다이오드 소자를 밀봉하는 반투명 밀봉수지부(18)와,상기 주면 상에 배치된 반사기(19, 32, 33)로서, 상기 밀봉수지부의 외부 둘레로부터 거리를 두고 있는 경사면(19f)으로 상기 밀봉수지부의 외부둘레를 둘러싸는 반사기(19, 32, 33)를 포함하는 발광다이오드.
- 주면(15u)을 갖는 기판(15h)과,상기 주면 상에 배치된 복수의 발광다이오드 소자(16)와,상기 복수의 발광다이오드 소자가 상기 주면으로부터 돌출하는 독립적인 볼록부로서 이루어지게 하도록, 상기 복수의 발광다이오드 소자를 모아서 밀봉하는 반투명 밀봉수지부(18h)와,상기 주면 상에 배치된 반사기(32)로서, 상기 밀봉수지부의 외부 둘레로부터 거리를 두고 있는 경사면(32f)으로 상기 밀봉수지부의 외부둘레를 둘러싸는 반사기(32)를 포함하는 발광다이오드.
- 주면(15u)을 갖는 기판과,상기 주면 상에 배치된 복수의 발광다이오드 소자(16)와,상기 복수의 발광다이오드 소자가 각각 상기 주면으로부터 돌출하는 독립적인 볼록부로서 이루어지게 하도록, 상기 복수의 발광다이오드 소자를 개별적으로 밀봉하는 복수의 반투명 밀봉수지부(18i)와,상기 주면 상에 배치된 반사기(32, 33)로서, 상기 복수의 밀봉수지부의 외부 둘레로부터 거리를 두고 있는 경사면(32f, 33f)으로 상기 복수의 밀봉수지부의 외부둘레를 둘러싸는 반사기(32, 33)를 포함하는 발광다이오드.
- 제3항에 있어서,상기 반사기(33)는 상기 주면 상에 배치되어, 상기 복수의 밀봉수지부 각각의 외부 둘레로부터 거리를 두고 있는 경사면(33f)으로 상기 복수의 밀봉수지부 각각의 외부둘레를 개별적으로 둘러싸는 발광다이오드.
- 주면(15u)을 갖는 기판(15)과,상기 기판에 적층되고 상기 주면의 노출을 위한 개구부(23)를 갖는 판상 부재로 이루어지는 라미네이션(20)과,상기 개구부(23)내의 주면 상에 배치된 발광다이오드 소자(16)와,상기 개구부 내의 공간을 채워넣는 방식으로 상기 발광다이오드 소자를 밀봉하는 반투명 밀봉수지부(18j)와,상기 기판과 면하고 있는 상기 라미네이션의 표면 상에 배치된 반사기(19)로 서, 상기 개구부의 외부 둘레로부터 거리를 두고 있는 경사면(19f)으로 상기 개구부의 외부둘레를 둘러싸는 반사기(19)를 포함하는 발광다이오드.
- 제1항에 있어서,상기 경사면(32f, 33f1)은 적어도 3가지의 경사도의 조합으로 구현되는 발광다이오드.
- 제6항에 있어서,상기 경사면은 약 45°, 약 60° 및 약 70°의 3가지 경사도의 순차적인 조합에 의해 구현되는 발광다이오드.
- 제1항에 있어서,상기 경사면은 그 단면이 실질적으로 원호형상이면서 그 경사도는 상기 주면으로부터 멀어짐에 따라 급하게 되는 형상인 발광다이오드.
- 제1항에 있어서,상기 반사기는 거울마감 처리의 대상이 되는 내측 경사면을 갖는 발광다이오드.
- 제9항에 있어서,상기 거울마감 처리는 알루미늄 또는 은을 이용한 거울마감 플레이팅(mirror-finish plating)에 의해 실시되는 발광다이오드.
- 제1항에 있어서,상기 밀봉수지부는 투명한 수지로 이루어지는 발광다이오드.
- 제1항에 있어서,상기 밀봉수지부는 형광체 함유 수지로 이루어지는 발광다이오드.
- 제1항에 있어서,상기 밀봉수지부는 산란물질 함유 수지로 이루어지는 발광다이오드.
- 제1항에 있어서,상기 밀봉수지부는 실질적으로 반구체 형상인 발광다이오드.
- 제1항에 있어서,상기 밀봉수지부는 실질적으로 원기둥 형상인 발광다이오드.
- 제1항에 있어서,상기 반사기(36)는 상기 경사면의 바깥쪽에서 상기 주면(15u)에 대해 평행하 게 연장하는 상면(25)과, 상기 상면 보다 아래쪽에 위치하면서 상기 상면의 외부둘레를 둘러싸는 단차부(24)를 갖는 발광다이오드.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005112292A JP4744178B2 (ja) | 2005-04-08 | 2005-04-08 | 発光ダイオード |
JPJP-P-2005-00112292 | 2005-04-08 |
Publications (2)
Publication Number | Publication Date |
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KR20060107305A true KR20060107305A (ko) | 2006-10-13 |
KR100853240B1 KR100853240B1 (ko) | 2008-08-20 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020060029355A KR100853240B1 (ko) | 2005-04-08 | 2006-03-31 | 발광다이오드 |
Country Status (6)
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US (2) | US7598532B2 (ko) |
EP (1) | EP1710846A1 (ko) |
JP (1) | JP4744178B2 (ko) |
KR (1) | KR100853240B1 (ko) |
CN (1) | CN100435367C (ko) |
TW (1) | TWI316768B (ko) |
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-
2005
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-
2006
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- 2006-04-07 EP EP06007421A patent/EP1710846A1/en not_active Withdrawn
- 2006-04-07 US US11/400,664 patent/US7598532B2/en active Active
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JP2006294804A (ja) | 2006-10-26 |
EP1710846A1 (en) | 2006-10-11 |
TW200707798A (en) | 2007-02-16 |
US7598532B2 (en) | 2009-10-06 |
CN1845351A (zh) | 2006-10-11 |
KR100853240B1 (ko) | 2008-08-20 |
JP4744178B2 (ja) | 2011-08-10 |
US7964886B2 (en) | 2011-06-21 |
CN100435367C (zh) | 2008-11-19 |
TWI316768B (en) | 2009-11-01 |
US20060226437A1 (en) | 2006-10-12 |
US20090315059A1 (en) | 2009-12-24 |
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