JP3134330U - 輝度が改良されるsmdダイオードホルダ構造およびそのパッケージ - Google Patents
輝度が改良されるsmdダイオードホルダ構造およびそのパッケージ Download PDFInfo
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- JP3134330U JP3134330U JP2007004058U JP2007004058U JP3134330U JP 3134330 U JP3134330 U JP 3134330U JP 2007004058 U JP2007004058 U JP 2007004058U JP 2007004058 U JP2007004058 U JP 2007004058U JP 3134330 U JP3134330 U JP 3134330U
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- 239000000084 colloidal system Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000007789 sealing Methods 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims description 2
- -1 compound compound Chemical class 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 239000011812 mixed powder Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 13
- LVDRREOUMKACNJ-BKMJKUGQSA-N N-[(2R,3S)-2-(4-chlorophenyl)-1-(1,4-dimethyl-2-oxoquinolin-7-yl)-6-oxopiperidin-3-yl]-2-methylpropane-1-sulfonamide Chemical compound CC(C)CS(=O)(=O)N[C@H]1CCC(=O)N([C@@H]1c1ccc(Cl)cc1)c1ccc2c(C)cc(=O)n(C)c2c1 LVDRREOUMKACNJ-BKMJKUGQSA-N 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- DEVSOMFAQLZNKR-RJRFIUFISA-N (z)-3-[3-[3,5-bis(trifluoromethyl)phenyl]-1,2,4-triazol-1-yl]-n'-pyrazin-2-ylprop-2-enehydrazide Chemical compound FC(F)(F)C1=CC(C(F)(F)F)=CC(C2=NN(\C=C/C(=O)NNC=3N=CC=NC=3)C=N2)=C1 DEVSOMFAQLZNKR-RJRFIUFISA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
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Abstract
【解決手段】このSMDダイオードホルダ構造は、コロイド30と複数の金属ホルダ40とを含み、コロイドの両側に機能エリア31および凹溝32が形成され、金属ホルダはコロイド内部に位置されるベース41およびベースからコロイドの外に延び出される接続ピン42をそれぞれ有し、ベースの頂面411及び底面412が機能エリアおよび凹溝内に露出されることによって、ダイオードホルダ構造が形成される。機能エリア内の1つのベースの頂面にはLEDチップ50が固着され、凹溝の他のベースの底面には静電気防護チップ70が固着され、LEDチップ、静電気防護チップおよびベース上にはワイヤが接続され、かつ機能エリアは第1のシーリングコンパウンド60で覆われ、凹溝は第2のシーリングコンパウンド80で覆われることによって、ダイオードパッケージが構成される。
【選択図】図5
Description
2)コロイドと金属ホルダとが結合した後に、さらに後続プロセスのLEDチップおよび静電気防護チップなどの作業を行うことで、コロイドを高温成形する時に第2のシーリングコンパウンドが劣化されるのを避けることができ、並びに生産製造過程における不良率や、チェックのコストおよび生産製造コストを低下させるなどの目的を達成でき、作製が便利でかつより量産化し易い効果を備える。
12 コロイド
13 LEDチップ
14、14’ ワイヤ
15 静電気防護チップ
16 エポキシ樹脂
21 ホルダ
211 凹み
22 保護素子
23、23’ 接着材料
24、24’ ワイヤ
25 モールド部材
251 円弧状ディンプル
26 発光ダイオードチップ
30 コロイド
31 機能エリア
32 凹溝
33 区画用ブロック
40 金属ホルダ
41 ベース
42 接続ピン
411 頂面
412 底面
50 LEDチップ
51 第1のワイヤ
60 第1のシーリングコンパウンド
70 静電気防護チップ
71 第2のワイヤ
80 第2のシーリングコンパウンド
Claims (5)
- 一方の内部に凹みの機能エリアを有し、他の一方の内部に凹みの凹溝を有するコロイドと、
それぞれ前記コロイド内に固着され、前記コロイド内部に位置されるベース、および前記ベースからコロイドの外に延び出される接続ピンをそれぞれ有し、前記各ベースの頂面が前記機能エリア内にそれぞれ露出され、前記各ベースの底面が前記凹溝内にそれぞれ露出される複数の金属ホルダとを含む、輝度が改良されるSMDダイオードホルダ構造。 - 前記接続ピンが、前記コロイドの同一側に位置され、或いは前記接続ピンが、前記コロイドの両側に対向的にそれぞれ位置されることを特徴とする請求項1記載の輝度が改良されるSMDダイオードホルダ構造。
- 一方の内部に凹みの機能エリアを有し、他の一方の内部に凹みの凹溝を有するコロイドと、
それぞれ前記コロイド内に固着され、前記コロイド内部に位置されるベース、および前記ベースからコロイドの外に延び出される接続ピンをそれぞれ有し、前記各ベースの頂面が前記機能エリア内にそれぞれ露出され、前記各ベースの底面が前記凹溝内にそれぞれ露出される複数の金属ホルダと、
前記の1つのベースの頂面に固着され、該LEDチップおよびベースの頂面間に第1のワイヤが接続される少なくとも1つのLEDチップと、
前記コロイドの機能領域内に結合され、前記LEDチップを覆う第1のシーリングコンパウンドと、
前記LEDチップの反対側となるベースの底面に固着され、該静電気防護チップとLEDチップが固着されたベースの底面間に第2のワイヤが接続される静電気防護チップと、
前記コロイドの凹溝内に結合され、前記静電気防護チップを覆う第2のシーリングコンパウンドとを含む、輝度が改良されるSMDダイオードパッケージ。 - 前記接続ピンが、前記コロイドの同一側に位置され、或いは前記接続ピンが、前記コロイドの両側に対向的にそれぞれ位置されることを特徴とする請求項3記載の輝度が改良されるSMDダイオードパッケージ。
- 前記シーリングコンパウンド内に、さらに、蛍光粉の混合式シーリングコンパウンド材がミックスされたことを特徴とする請求項3記載の輝度が改良されるSMDダイオードパッケージ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW095139336A TW200820463A (en) | 2006-10-25 | 2006-10-25 | Light-improving SMD diode holder and package thereof |
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JP3134330U true JP3134330U (ja) | 2007-08-09 |
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JP2007004058U Expired - Lifetime JP3134330U (ja) | 2006-10-25 | 2007-05-31 | 輝度が改良されるsmdダイオードホルダ構造およびそのパッケージ |
Country Status (3)
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US (2) | US7679090B2 (ja) |
JP (1) | JP3134330U (ja) |
TW (1) | TW200820463A (ja) |
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US9887331B2 (en) | 2010-03-30 | 2018-02-06 | Dai Nippon Printing Co., Ltd. | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate |
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2006
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2007
- 2007-05-31 JP JP2007004058U patent/JP3134330U/ja not_active Expired - Lifetime
- 2007-06-26 US US11/819,178 patent/US7679090B2/en active Active
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2009
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Publication number | Priority date | Publication date | Assignee | Title |
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US9887331B2 (en) | 2010-03-30 | 2018-02-06 | Dai Nippon Printing Co., Ltd. | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate |
CN102446909A (zh) * | 2010-09-30 | 2012-05-09 | 展晶科技(深圳)有限公司 | 发光二极管组合 |
CN102446909B (zh) * | 2010-09-30 | 2015-03-11 | 赛恩倍吉科技顾问(深圳)有限公司 | 发光二极管组合 |
US9412923B2 (en) | 2010-11-02 | 2016-08-09 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
US9773960B2 (en) | 2010-11-02 | 2017-09-26 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
WO2013084437A1 (ja) * | 2011-12-09 | 2013-06-13 | 日本特殊陶業株式会社 | 発光素子搭載用配線基板 |
JP2017157687A (ja) * | 2016-03-02 | 2017-09-07 | ローム株式会社 | Led発光装置 |
Also Published As
Publication number | Publication date |
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US20100032709A1 (en) | 2010-02-11 |
US20080099779A1 (en) | 2008-05-01 |
US8193540B2 (en) | 2012-06-05 |
TW200820463A (en) | 2008-05-01 |
US7679090B2 (en) | 2010-03-16 |
TWI326497B (ja) | 2010-06-21 |
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