KR20060024478A - 포토레지스트 박리액 조성물 - Google Patents

포토레지스트 박리액 조성물 Download PDF

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Publication number
KR20060024478A
KR20060024478A KR1020040072921A KR20040072921A KR20060024478A KR 20060024478 A KR20060024478 A KR 20060024478A KR 1020040072921 A KR1020040072921 A KR 1020040072921A KR 20040072921 A KR20040072921 A KR 20040072921A KR 20060024478 A KR20060024478 A KR 20060024478A
Authority
KR
South Korea
Prior art keywords
weight
composition
parts
resist
polar solvent
Prior art date
Application number
KR1020040072921A
Other languages
English (en)
Korean (ko)
Inventor
윤석일
김성배
김위용
정종현
허순범
김병욱
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Priority to KR1020040072921A priority Critical patent/KR20060024478A/ko
Priority to JP2005260613A priority patent/JP2006079093A/ja
Priority to TW094131378A priority patent/TWI402636B/zh
Priority to CN200510102849A priority patent/CN100578368C/zh
Publication of KR20060024478A publication Critical patent/KR20060024478A/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Liquid Crystal (AREA)
KR1020040072921A 2004-09-13 2004-09-13 포토레지스트 박리액 조성물 KR20060024478A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020040072921A KR20060024478A (ko) 2004-09-13 2004-09-13 포토레지스트 박리액 조성물
JP2005260613A JP2006079093A (ja) 2004-09-13 2005-09-08 フォトレジスト剥離液組成物
TW094131378A TWI402636B (zh) 2004-09-13 2005-09-12 光阻劑剝離液組成物
CN200510102849A CN100578368C (zh) 2004-09-13 2005-09-13 光阻剂剥离液组合物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040072921A KR20060024478A (ko) 2004-09-13 2004-09-13 포토레지스트 박리액 조성물

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020120008382A Division KR101213735B1 (ko) 2012-01-27 2012-01-27 포토레지스트 박리액 조성물

Publications (1)

Publication Number Publication Date
KR20060024478A true KR20060024478A (ko) 2006-03-17

Family

ID=36158552

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040072921A KR20060024478A (ko) 2004-09-13 2004-09-13 포토레지스트 박리액 조성물

Country Status (4)

Country Link
JP (1) JP2006079093A (zh)
KR (1) KR20060024478A (zh)
CN (1) CN100578368C (zh)
TW (1) TWI402636B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010002194A2 (ko) * 2008-07-01 2010-01-07 주식회사 동진쎄미켐 박리제 및 상기 박리제를 사용한 표시판의 제조 방법
KR101008373B1 (ko) * 2009-11-26 2011-01-13 주식회사 엘지화학 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법
WO2011065603A1 (ko) * 2009-11-26 2011-06-03 주식회사 엘지화학 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법
WO2014181992A1 (ko) * 2013-05-07 2014-11-13 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
US9865475B2 (en) 2012-12-18 2018-01-09 Npics Inc. Dry separation method using high-speed particle beam
US11402759B2 (en) 2015-06-13 2022-08-02 Npics Inc. Dry separation apparatus, nozzle for generating high-speed particle beam for dry separation

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101136026B1 (ko) * 2004-09-24 2012-04-18 주식회사 동진쎄미켐 포토레지스트용 박리제 및 상기 박리제를 이용한 박막트랜지스터 표시판의 제조 방법
JP4902299B2 (ja) * 2006-09-11 2012-03-21 三星電子株式会社 表示装置の製造方法
US9081291B2 (en) 2009-08-11 2015-07-14 Dongwoo Fine-Chem Co., Ltd. Resist stripping solution composition, and method for stripping resist by using same
TWI405053B (zh) * 2009-11-27 2013-08-11 Lg Chemical Ltd 光阻剝離組成物及剝離光阻之方法
KR101668063B1 (ko) * 2013-05-07 2016-10-20 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
CN103425001A (zh) * 2013-07-19 2013-12-04 杨桂望 抗蚀剂膜清洗组合物
JP5575318B1 (ja) * 2013-09-02 2014-08-20 パナソニック株式会社 レジスト剥離液
KR102119438B1 (ko) * 2013-10-30 2020-06-08 삼성디스플레이 주식회사 박리액 및 이를 이용한 표시 장치의 제조방법
KR101586453B1 (ko) * 2014-08-20 2016-01-21 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
WO2016191677A1 (en) * 2015-05-28 2016-12-01 Ecolab Usa Inc. Water-soluble pyrazole derivatives as corrosion inhibitors
MX2017015291A (es) 2015-05-28 2018-02-19 Ecolab Usa Inc Inhibidor de la corrosion a base de purina.
CN107614497B (zh) 2015-05-28 2021-08-03 艺康美国股份有限公司 腐蚀抑制剂
CA2987043C (en) 2015-05-28 2023-06-13 Ecolab Usa Inc. 2-substituted imidazole and benzimidazole corrosion inhibitors
KR20180087624A (ko) * 2017-01-25 2018-08-02 동우 화인켐 주식회사 레지스트 박리액 조성물
CN108828910A (zh) * 2018-06-21 2018-11-16 深圳达诚清洗剂有限公司 一种正性光刻胶清洗组合物及其制备方法
CN113614647A (zh) * 2019-03-25 2021-11-05 松下知识产权经营株式会社 抗蚀剂剥离液
TWI812342B (zh) * 2021-11-22 2023-08-11 南韓商Ｌｇ化學股份有限公司 移除光阻之剝離劑組成物以及使用其之剝離光阻方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000162788A (ja) * 1998-11-27 2000-06-16 Tokyo Ohka Kogyo Co Ltd 銅配線形成基板に用いるホトレジスト用剥離液組成物およびこれを用いたレジスト剥離方法
JP4229552B2 (ja) * 1998-12-25 2009-02-25 東京応化工業株式会社 ホトレジスト用剥離液組成物およびこれを用いたホトレジスト剥離方法
JP2001183849A (ja) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
DE60108286T2 (de) * 2000-03-27 2005-12-29 Shipley Co., L.L.C., Marlborough Entfernungsmittel für Polymer
JP4470328B2 (ja) * 2001-02-09 2010-06-02 東ソー株式会社 レジスト剥離剤
JP2002244310A (ja) * 2001-02-21 2002-08-30 Tosoh Corp レジスト剥離剤
JP4483114B2 (ja) * 2001-03-30 2010-06-16 東ソー株式会社 レジスト剥離剤
JP4165208B2 (ja) * 2002-12-24 2008-10-15 東ソー株式会社 レジスト剥離方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010002194A2 (ko) * 2008-07-01 2010-01-07 주식회사 동진쎄미켐 박리제 및 상기 박리제를 사용한 표시판의 제조 방법
WO2010002194A3 (ko) * 2008-07-01 2010-04-22 주식회사 동진쎄미켐 박리제 및 상기 박리제를 사용한 표시판의 제조 방법
KR101008373B1 (ko) * 2009-11-26 2011-01-13 주식회사 엘지화학 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법
WO2011065603A1 (ko) * 2009-11-26 2011-06-03 주식회사 엘지화학 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법
US9865475B2 (en) 2012-12-18 2018-01-09 Npics Inc. Dry separation method using high-speed particle beam
WO2014181992A1 (ko) * 2013-05-07 2014-11-13 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
US11402759B2 (en) 2015-06-13 2022-08-02 Npics Inc. Dry separation apparatus, nozzle for generating high-speed particle beam for dry separation

Also Published As

Publication number Publication date
TW200617624A (en) 2006-06-01
CN100578368C (zh) 2010-01-06
CN1758144A (zh) 2006-04-12
TWI402636B (zh) 2013-07-21
JP2006079093A (ja) 2006-03-23

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