KR20050067207A - 화학증폭형의 포지티브형 포토레지스트 조성물 - Google Patents

화학증폭형의 포지티브형 포토레지스트 조성물 Download PDF

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Publication number
KR20050067207A
KR20050067207A KR1020057007368A KR20057007368A KR20050067207A KR 20050067207 A KR20050067207 A KR 20050067207A KR 1020057007368 A KR1020057007368 A KR 1020057007368A KR 20057007368 A KR20057007368 A KR 20057007368A KR 20050067207 A KR20050067207 A KR 20050067207A
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KR
South Korea
Prior art keywords
resin
acid
photoresist composition
combination
solubility
Prior art date
Application number
KR1020057007368A
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English (en)
Inventor
카즈유키 닛타
나오토 모토이케
Original Assignee
토쿄오오카코교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 토쿄오오카코교 가부시기가이샤 filed Critical 토쿄오오카코교 가부시기가이샤
Publication of KR20050067207A publication Critical patent/KR20050067207A/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020057007368A 2002-10-31 2005-04-28 화학증폭형의 포지티브형 포토레지스트 조성물 KR20050067207A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002317934A JP4189951B2 (ja) 2002-10-31 2002-10-31 化学増幅型ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
KR20050067207A true KR20050067207A (ko) 2005-06-30

Family

ID=32211739

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057007368A KR20050067207A (ko) 2002-10-31 2005-04-28 화학증폭형의 포지티브형 포토레지스트 조성물

Country Status (7)

Country Link
US (1) US20050170276A1 (ko)
JP (1) JP4189951B2 (ko)
KR (1) KR20050067207A (ko)
CN (1) CN1692314B (ko)
AU (1) AU2003274760A1 (ko)
TW (1) TWI308259B (ko)
WO (1) WO2004040377A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4360844B2 (ja) * 2003-06-16 2009-11-11 富士フイルム株式会社 ポジ型レジスト組成物
JP4732046B2 (ja) * 2005-07-20 2011-07-27 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5074488B2 (ja) 2006-06-28 2012-11-14 ダウ・コーニング・コーポレイション 電子求引官能性を有する塩基性添加剤を含むシルセスキオキサン樹脂システム
KR101216060B1 (ko) 2006-06-28 2012-12-28 도쿄 오카 고교 가부시키가이샤 전자 유인성 관능 그룹을 갖는 염기 첨가제를 함유한 실세스퀴옥산 수지 시스템
JP5358319B2 (ja) * 2009-06-30 2013-12-04 東京応化工業株式会社 接着剤組成物および接着フィルム
JP5628104B2 (ja) * 2011-07-05 2014-11-19 富士フイルム株式会社 感光性樹脂組成物、パターン並びにその製造方法
TWI721371B (zh) * 2013-12-26 2021-03-11 日商旭化成電子材料股份有限公司 感光性樹脂組合物及感光性樹脂積層體
JP6811004B2 (ja) * 2015-01-21 2021-01-13 東京応化工業株式会社 マイクロレンズパターン製造用ポジ型感光性樹脂組成物
JP7407587B2 (ja) * 2019-12-19 2024-01-04 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3293480B2 (ja) * 1995-07-20 2002-06-17 信越化学工業株式会社 化学増幅ポジ型レジスト材料
TW460753B (en) * 1995-07-20 2001-10-21 Shinetsu Chemical Co Chemically amplified positive resist material
TW448344B (en) * 1995-10-09 2001-08-01 Shinetsu Chemical Co Chemically amplified positive resist composition
TW477913B (en) * 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
JP3918880B2 (ja) * 1995-11-02 2007-05-23 信越化学工業株式会社 新規スルホニウム塩及び化学増幅ポジ型レジスト材料
JPH09179301A (ja) * 1995-12-26 1997-07-11 Mitsubishi Chem Corp ポジ型感放射線性組成物
US5908730A (en) * 1996-07-24 1999-06-01 Tokyo Ohka Kogyo Co., Ltd. Chemical-sensitization photoresist composition
US6117621A (en) * 1997-03-28 2000-09-12 Shin-Etsu Chemical Co., Ltd. Patterning method
JP3570479B2 (ja) * 1997-03-28 2004-09-29 信越化学工業株式会社 化学増幅ポジ型レジスト材料の選定方法
JP3909723B2 (ja) * 1997-06-30 2007-04-25 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 感放射線組成物
JP3473410B2 (ja) * 1998-06-11 2003-12-02 住友化学工業株式会社 狭分散性重合体を用いたポジ型レジスト組成物
JP2000109744A (ja) * 1998-10-02 2000-04-18 Mitsubishi Chemicals Corp 感放射線組成物
JP3757731B2 (ja) * 1999-01-28 2006-03-22 住友化学株式会社 レジスト組成物
JP4132355B2 (ja) * 1999-02-24 2008-08-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 感放射線組成物
JP3771739B2 (ja) * 1999-03-18 2006-04-26 東京応化工業株式会社 ポジ型レジスト組成物
JP2001272785A (ja) * 2000-01-17 2001-10-05 Shin Etsu Chem Co Ltd 化学増幅型レジスト材料
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
JP3948646B2 (ja) * 2000-08-31 2007-07-25 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2002091003A (ja) * 2000-09-19 2002-03-27 Tokyo Ohka Kogyo Co Ltd 薄膜形成用ポジ型レジスト組成物及びそれを用いた感光材料
JP2002202603A (ja) * 2000-10-23 2002-07-19 Jsr Corp 感放射線性樹脂組成物
JP2002139838A (ja) * 2000-10-31 2002-05-17 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2002148784A (ja) * 2000-11-07 2002-05-22 Tokyo Ohka Kogyo Co Ltd 化学増幅型ポジ型レジスト塗布液及びそれを用いたレジストパターン形成方法

Also Published As

Publication number Publication date
AU2003274760A1 (en) 2004-05-25
TWI308259B (en) 2009-04-01
CN1692314A (zh) 2005-11-02
CN1692314B (zh) 2011-08-31
JP4189951B2 (ja) 2008-12-03
JP2004151486A (ja) 2004-05-27
WO2004040377A1 (en) 2004-05-13
US20050170276A1 (en) 2005-08-04
TW200416488A (en) 2004-09-01

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