KR20050067207A - 화학증폭형의 포지티브형 포토레지스트 조성물 - Google Patents
화학증폭형의 포지티브형 포토레지스트 조성물 Download PDFInfo
- Publication number
- KR20050067207A KR20050067207A KR1020057007368A KR20057007368A KR20050067207A KR 20050067207 A KR20050067207 A KR 20050067207A KR 1020057007368 A KR1020057007368 A KR 1020057007368A KR 20057007368 A KR20057007368 A KR 20057007368A KR 20050067207 A KR20050067207 A KR 20050067207A
- Authority
- KR
- South Korea
- Prior art keywords
- resin
- acid
- photoresist composition
- combination
- solubility
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002317934A JP4189951B2 (ja) | 2002-10-31 | 2002-10-31 | 化学増幅型ポジ型レジスト組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20050067207A true KR20050067207A (ko) | 2005-06-30 |
Family
ID=32211739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057007368A KR20050067207A (ko) | 2002-10-31 | 2005-04-28 | 화학증폭형의 포지티브형 포토레지스트 조성물 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20050170276A1 (ko) |
JP (1) | JP4189951B2 (ko) |
KR (1) | KR20050067207A (ko) |
CN (1) | CN1692314B (ko) |
AU (1) | AU2003274760A1 (ko) |
TW (1) | TWI308259B (ko) |
WO (1) | WO2004040377A1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4360844B2 (ja) * | 2003-06-16 | 2009-11-11 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4732046B2 (ja) * | 2005-07-20 | 2011-07-27 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
JP5074488B2 (ja) | 2006-06-28 | 2012-11-14 | ダウ・コーニング・コーポレイション | 電子求引官能性を有する塩基性添加剤を含むシルセスキオキサン樹脂システム |
KR101216060B1 (ko) | 2006-06-28 | 2012-12-28 | 도쿄 오카 고교 가부시키가이샤 | 전자 유인성 관능 그룹을 갖는 염기 첨가제를 함유한 실세스퀴옥산 수지 시스템 |
JP5358319B2 (ja) * | 2009-06-30 | 2013-12-04 | 東京応化工業株式会社 | 接着剤組成物および接着フィルム |
JP5628104B2 (ja) * | 2011-07-05 | 2014-11-19 | 富士フイルム株式会社 | 感光性樹脂組成物、パターン並びにその製造方法 |
TWI721371B (zh) * | 2013-12-26 | 2021-03-11 | 日商旭化成電子材料股份有限公司 | 感光性樹脂組合物及感光性樹脂積層體 |
JP6811004B2 (ja) * | 2015-01-21 | 2021-01-13 | 東京応化工業株式会社 | マイクロレンズパターン製造用ポジ型感光性樹脂組成物 |
JP7407587B2 (ja) * | 2019-12-19 | 2024-01-04 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3293480B2 (ja) * | 1995-07-20 | 2002-06-17 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
TW460753B (en) * | 1995-07-20 | 2001-10-21 | Shinetsu Chemical Co | Chemically amplified positive resist material |
TW448344B (en) * | 1995-10-09 | 2001-08-01 | Shinetsu Chemical Co | Chemically amplified positive resist composition |
TW477913B (en) * | 1995-11-02 | 2002-03-01 | Shinetsu Chemical Co | Sulfonium salts and chemically amplified positive resist compositions |
JP3918880B2 (ja) * | 1995-11-02 | 2007-05-23 | 信越化学工業株式会社 | 新規スルホニウム塩及び化学増幅ポジ型レジスト材料 |
JPH09179301A (ja) * | 1995-12-26 | 1997-07-11 | Mitsubishi Chem Corp | ポジ型感放射線性組成物 |
US5908730A (en) * | 1996-07-24 | 1999-06-01 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-sensitization photoresist composition |
US6117621A (en) * | 1997-03-28 | 2000-09-12 | Shin-Etsu Chemical Co., Ltd. | Patterning method |
JP3570479B2 (ja) * | 1997-03-28 | 2004-09-29 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料の選定方法 |
JP3909723B2 (ja) * | 1997-06-30 | 2007-04-25 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 感放射線組成物 |
JP3473410B2 (ja) * | 1998-06-11 | 2003-12-02 | 住友化学工業株式会社 | 狭分散性重合体を用いたポジ型レジスト組成物 |
JP2000109744A (ja) * | 1998-10-02 | 2000-04-18 | Mitsubishi Chemicals Corp | 感放射線組成物 |
JP3757731B2 (ja) * | 1999-01-28 | 2006-03-22 | 住友化学株式会社 | レジスト組成物 |
JP4132355B2 (ja) * | 1999-02-24 | 2008-08-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 感放射線組成物 |
JP3771739B2 (ja) * | 1999-03-18 | 2006-04-26 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
JP2001272785A (ja) * | 2000-01-17 | 2001-10-05 | Shin Etsu Chem Co Ltd | 化学増幅型レジスト材料 |
JP4694686B2 (ja) * | 2000-08-31 | 2011-06-08 | 東京応化工業株式会社 | 半導体素子製造方法 |
JP3948646B2 (ja) * | 2000-08-31 | 2007-07-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
JP2002091003A (ja) * | 2000-09-19 | 2002-03-27 | Tokyo Ohka Kogyo Co Ltd | 薄膜形成用ポジ型レジスト組成物及びそれを用いた感光材料 |
JP2002202603A (ja) * | 2000-10-23 | 2002-07-19 | Jsr Corp | 感放射線性樹脂組成物 |
JP2002139838A (ja) * | 2000-10-31 | 2002-05-17 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2002148784A (ja) * | 2000-11-07 | 2002-05-22 | Tokyo Ohka Kogyo Co Ltd | 化学増幅型ポジ型レジスト塗布液及びそれを用いたレジストパターン形成方法 |
-
2002
- 2002-10-31 JP JP2002317934A patent/JP4189951B2/ja not_active Expired - Fee Related
-
2003
- 2003-10-23 TW TW092129450A patent/TWI308259B/zh not_active IP Right Cessation
- 2003-10-27 WO PCT/JP2003/013723 patent/WO2004040377A1/en active Application Filing
- 2003-10-27 US US10/514,320 patent/US20050170276A1/en not_active Abandoned
- 2003-10-27 CN CN2003801005801A patent/CN1692314B/zh not_active Expired - Lifetime
- 2003-10-27 AU AU2003274760A patent/AU2003274760A1/en not_active Abandoned
-
2005
- 2005-04-28 KR KR1020057007368A patent/KR20050067207A/ko active Search and Examination
Also Published As
Publication number | Publication date |
---|---|
AU2003274760A1 (en) | 2004-05-25 |
TWI308259B (en) | 2009-04-01 |
CN1692314A (zh) | 2005-11-02 |
CN1692314B (zh) | 2011-08-31 |
JP4189951B2 (ja) | 2008-12-03 |
JP2004151486A (ja) | 2004-05-27 |
WO2004040377A1 (en) | 2004-05-13 |
US20050170276A1 (en) | 2005-08-04 |
TW200416488A (en) | 2004-09-01 |
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AMND | Amendment | ||
E601 | Decision to refuse application | ||
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B601 | Maintenance of original decision after re-examination before a trial | ||
J301 | Trial decision |
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