KR20050038037A - 격자-조율 반도체 기판의 제조 - Google Patents

격자-조율 반도체 기판의 제조 Download PDF

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Publication number
KR20050038037A
KR20050038037A KR1020057003640A KR20057003640A KR20050038037A KR 20050038037 A KR20050038037 A KR 20050038037A KR 1020057003640 A KR1020057003640 A KR 1020057003640A KR 20057003640 A KR20057003640 A KR 20057003640A KR 20050038037 A KR20050038037 A KR 20050038037A
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KR
South Korea
Prior art keywords
sige layer
sige
dislocations
layer
range
Prior art date
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Ceased
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KR1020057003640A
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English (en)
Korean (ko)
Inventor
아담 다니엘 케이프웰
티모시 존 그래스비
에반 휴버트 크레스웰 파커
테렌스 훨
Original Assignee
유니버시티 오브 워위크
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Publication of KR20050038037A publication Critical patent/KR20050038037A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Recrystallisation Techniques (AREA)
KR1020057003640A 2002-09-03 2003-08-12 격자-조율 반도체 기판의 제조 Ceased KR20050038037A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0220438.6A GB0220438D0 (en) 2002-09-03 2002-09-03 Formation of lattice-turning semiconductor substrates
GB0220438.6 2002-09-03

Publications (1)

Publication Number Publication Date
KR20050038037A true KR20050038037A (ko) 2005-04-25

Family

ID=9943412

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057003640A Ceased KR20050038037A (ko) 2002-09-03 2003-08-12 격자-조율 반도체 기판의 제조

Country Status (8)

Country Link
US (1) US7179727B2 (https=)
EP (1) EP1540715A1 (https=)
JP (1) JP2005537672A (https=)
KR (1) KR20050038037A (https=)
CN (1) CN100364052C (https=)
AU (1) AU2003251376A1 (https=)
GB (1) GB0220438D0 (https=)
WO (1) WO2004023536A1 (https=)

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WO2006011107A1 (en) * 2004-07-22 2006-02-02 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
GB2418531A (en) * 2004-09-22 2006-03-29 Univ Warwick Formation of lattice-tuning semiconductor substrates
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
KR101329388B1 (ko) 2005-07-26 2013-11-14 앰버웨이브 시스템즈 코포레이션 다른 액티브 영역 물질의 집적회로 집적을 위한 솔루션
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US7777250B2 (en) * 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US7476606B2 (en) * 2006-03-28 2009-01-13 Northrop Grumman Corporation Eutectic bonding of ultrathin semiconductors
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) * 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
WO2009035746A2 (en) * 2007-09-07 2009-03-19 Amberwave Systems Corporation Multi-junction solar cells
US8716836B2 (en) * 2007-12-28 2014-05-06 Sumitomo Chemical Company, Limited Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) * 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
TW201019377A (en) * 2008-10-02 2010-05-16 Sumitomo Chemical Co Wafer for a semiconductor device, semiconductor device apparatus, design system, manufacturing method, and design method
SG171987A1 (en) 2009-04-02 2011-07-28 Taiwan Semiconductor Mfg Devices formed from a non-polar plane of a crystalline material and method of making the same
WO2010134334A1 (ja) * 2009-05-22 2010-11-25 住友化学株式会社 半導体基板、電子デバイス、半導体基板の製造方法及び電子デバイスの製造方法
JP6706414B2 (ja) * 2015-11-27 2020-06-10 国立研究開発法人情報通信研究機構 Ｇｅ単結晶薄膜の製造方法及び光デバイス

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US5272105A (en) * 1988-02-11 1993-12-21 Gte Laboratories Incorporated Method of manufacturing an heteroepitaxial semiconductor structure
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US5158907A (en) * 1990-08-02 1992-10-27 At&T Bell Laboratories Method for making semiconductor devices with low dislocation defects
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JP3286920B2 (ja) * 1992-07-10 2002-05-27 富士通株式会社 半導体装置の製造方法
JPH06260427A (ja) * 1993-03-05 1994-09-16 Nec Corp 半導体膜の選択成長方法
US6039803A (en) * 1996-06-28 2000-03-21 Massachusetts Institute Of Technology Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon
US20010006249A1 (en) 1997-09-16 2001-07-05 Eugene A Fitzgerald Co-planar si and ge composite substrate and method of producing same
DE19802977A1 (de) 1998-01-27 1999-07-29 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung einer einkristallinen Schicht auf einem nicht gitterangepaßten Substrat, sowie eine oder mehrere solcher Schichten enthaltendes Bauelement
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
EP1192646B1 (en) * 1999-06-25 2008-08-13 Massachusetts Institute Of Technology Cyclic thermal anneal for dislocation reduction
JP4406995B2 (ja) * 2000-03-27 2010-02-03 パナソニック株式会社 半導体基板および半導体基板の製造方法
JP4269541B2 (ja) * 2000-08-01 2009-05-27 株式会社Ｓｕｍｃｏ 半導体基板と電界効果型トランジスタ並びにＳｉＧｅ層の形成方法及びこれを用いた歪みＳｉ層の形成方法と電界効果型トランジスタの製造方法
JP4345244B2 (ja) * 2001-05-31 2009-10-14 株式会社Ｓｕｍｃｏ ＳｉＧｅ層の形成方法及びこれを用いた歪みＳｉ層の形成方法と電界効果型トランジスタの製造方法
JP2004055943A (ja) * 2002-07-23 2004-02-19 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法

Also Published As

Publication number Publication date
US20050245055A1 (en) 2005-11-03
CN1714427A (zh) 2005-12-28
US7179727B2 (en) 2007-02-20
CN100364052C (zh) 2008-01-23
EP1540715A1 (en) 2005-06-15
JP2005537672A (ja) 2005-12-08
WO2004023536A1 (en) 2004-03-18
AU2003251376A1 (en) 2004-03-29
GB0220438D0 (en) 2002-10-09

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