KR20040089484A - 탄성 표면파 소자의 제조 방법 - Google Patents
탄성 표면파 소자의 제조 방법 Download PDFInfo
- Publication number
- KR20040089484A KR20040089484A KR1020040022872A KR20040022872A KR20040089484A KR 20040089484 A KR20040089484 A KR 20040089484A KR 1020040022872 A KR1020040022872 A KR 1020040022872A KR 20040022872 A KR20040022872 A KR 20040022872A KR 20040089484 A KR20040089484 A KR 20040089484A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode layer
- acoustic wave
- surface acoustic
- electrode
- piezoelectric substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/4908—Acoustic transducer
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (5)
- 압전 기판에 베이스 전극(base electrode)을 개재시켜서, 주전극(主電極)을 형성한 탄성 표면파 소자의 제조 방법으로서,상기 압전 기판의 표면 상태를 테라스(terrace) 폭이 50㎚ 이하이고, 또한 스텝(step) 폭이 1분자층으로 구성되는 구조를 포함하는 계단 구조를 형성하는 공정과,상기 베이스 전극으로서, 상기 주전극의 결정성을 향상하는 효과가 있는 제 1 전극층 및 제 2 전극층을 형성하는 공정과,상기 주전극으로서, 상기 제 2 전극층상에 Al을 주성분으로 하는 제 3 전극층을 형성하는 공정을 갖는 것을 특징으로 하는 탄성 표면파 소자의 제조 방법.
- 제 1 항에 있어서, 상기 압전 기판의 표면 상태를 계단 구조로 형성하는 공정은 인산, 피로인산(pyrophosphoric acid), 안식향산, 옥탄산(octanoic acid), 염산, 질산, 황산, 플루오르화 수소산(hydrofluoric acid), 완충 플루오르화 수소산(buffered hydrofluoric acid), 황산수소칼륨 중 어느 하나를 주체로 하는 혼합 용액을 사용하여 상기 압전 기판의 표면을 에칭(etching) 처리하는 것을 특징으로 하는 탄성 표면파 소자의 제조 방법.
- 제 2 항에 있어서, 상기 압전 기판의 표면 상태를 계단 구조로 형성하는 공정은 상기 혼합액이 질산 용액과 플루오르화 수소산 용액을 2:1로 혼합한 용액이며, 또한 가온(加溫) 상태에서 상기 압전 기판의 표면을 에칭 처리하는 것을 특징으로 하는 탄성 표면파 소자의 제조 방법.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, 상기 제 1 전극층은 상기 압전 기판의 표면을 70℃ 이상의 온도로 한 상태에서 성막(成膜)되고, 상기 제 2 전극층 및 제 3 전극층은 상기 압전 기판의 표면을 50℃ 이하의 온도로 한 상태에서 성막되는 것을 특징으로 하는 탄성 표면파 소자의 제조 방법.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, 상기 제 1 전극층 및 상기 제 2 전극층은 Ti인 것을 특징으로 하는 탄성 표면파 소자의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00107967 | 2003-04-11 | ||
JP2003107967A JP4096787B2 (ja) | 2003-04-11 | 2003-04-11 | 弾性表面波素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040089484A true KR20040089484A (ko) | 2004-10-21 |
KR100560073B1 KR100560073B1 (ko) | 2006-03-13 |
Family
ID=32866795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040022872A KR100560073B1 (ko) | 2003-04-11 | 2004-04-02 | 탄성 표면파 소자의 제조 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7213322B2 (ko) |
EP (1) | EP1467483B1 (ko) |
JP (1) | JP4096787B2 (ko) |
KR (1) | KR100560073B1 (ko) |
CN (1) | CN100384086C (ko) |
AT (1) | ATE484101T1 (ko) |
DE (1) | DE602004029413D1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014157907A1 (ko) * | 2013-03-25 | 2014-10-02 | 주식회사 우진 | 고온용 초음파 센서 및 그 제조방법 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07334099A (ja) * | 1994-06-10 | 1995-12-22 | Sugimura Kogyo:Kk | 電照塔装置 |
WO2006016544A1 (ja) * | 2004-08-11 | 2006-02-16 | Murata Manufacturing Co., Ltd. | デュプレクサ及び通信装置 |
JP4809042B2 (ja) * | 2005-11-10 | 2011-11-02 | 日本電波工業株式会社 | 弾性表面波素子及びその製造方法 |
CN100445873C (zh) * | 2005-11-30 | 2008-12-24 | 中国科学院微电子研究所 | 纳米压印和光学光刻匹配混合的声表面波器件制备方法 |
DE102006003847B4 (de) * | 2006-01-26 | 2011-08-18 | Siemens AG, 80333 | Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat |
DE102009056663B4 (de) | 2009-12-02 | 2022-08-11 | Tdk Electronics Ag | Metallisierung mit hoher Leistungsverträglichkeit und hoher elektrischer Leitfähigkeit und Verfahren zur Herstellung |
WO2013141184A1 (ja) * | 2012-03-23 | 2013-09-26 | 株式会社村田製作所 | 弾性波フィルタ素子及びその製造方法 |
US20130320813A1 (en) | 2012-06-04 | 2013-12-05 | Tdk Corporation | Dielectric device |
US8981627B2 (en) * | 2012-06-04 | 2015-03-17 | Tdk Corporation | Piezoelectric device with electrode films and electroconductive oxide film |
JP2013255051A (ja) * | 2012-06-06 | 2013-12-19 | Seiko Epson Corp | 振動素子、振動子、電子デバイス、電子機器及び振動素子の製造方法 |
CN103763648B (zh) * | 2013-12-27 | 2017-06-09 | 圆展科技股份有限公司 | 耳机装置 |
US10700661B2 (en) | 2018-01-19 | 2020-06-30 | Huawei Technologie Co., Ltd. | Surface acoustic wave device with unidirectional transducer |
CN113889414A (zh) * | 2020-07-02 | 2022-01-04 | 长鑫存储技术有限公司 | 导电层的形成方法、导电结构及其形成方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5460883A (en) * | 1977-10-25 | 1979-05-16 | Citizen Watch Co Ltd | Manufacture of thin plate piezoelectric oscillator |
JPS62168410A (ja) * | 1986-01-20 | 1987-07-24 | Victor Co Of Japan Ltd | 弾性表面波共振子 |
JPH06112122A (ja) * | 1992-08-10 | 1994-04-22 | Canon Inc | 2次元量子デバイス構造 |
JP2888158B2 (ja) | 1995-01-18 | 1999-05-10 | 日本電気株式会社 | 弾性表面波装置の製造方法 |
JPH10247835A (ja) * | 1997-03-03 | 1998-09-14 | Kokusai Electric Co Ltd | ラブ波型弾性表面波デバイス |
JP3659455B2 (ja) | 1997-12-01 | 2005-06-15 | 京セラ株式会社 | 弾性表面波装置 |
JP3402311B2 (ja) | 2000-05-19 | 2003-05-06 | 株式会社村田製作所 | 弾性表面波装置 |
JP3846221B2 (ja) * | 2000-07-14 | 2006-11-15 | 株式会社村田製作所 | 弾性表面波素子 |
JP3521864B2 (ja) * | 2000-10-26 | 2004-04-26 | 株式会社村田製作所 | 弾性表面波素子 |
JP2002353767A (ja) * | 2001-05-29 | 2002-12-06 | Kyocera Corp | 弾性表面波装置 |
JP3971128B2 (ja) | 2001-06-05 | 2007-09-05 | 富士通株式会社 | 弾性表面波素子 |
JP2003069357A (ja) | 2001-08-28 | 2003-03-07 | Murata Mfg Co Ltd | 弾性表面波素子の製造方法および弾性表面波素子 |
TWI282660B (en) * | 2001-12-27 | 2007-06-11 | Murata Manufacturing Co | Surface acoustic wave device and manufacturing method therefor |
-
2003
- 2003-04-11 JP JP2003107967A patent/JP4096787B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-03 US US10/792,543 patent/US7213322B2/en active Active
- 2004-04-02 KR KR1020040022872A patent/KR100560073B1/ko active IP Right Grant
- 2004-04-08 AT AT04290930T patent/ATE484101T1/de not_active IP Right Cessation
- 2004-04-08 DE DE602004029413T patent/DE602004029413D1/de not_active Expired - Lifetime
- 2004-04-08 EP EP04290930A patent/EP1467483B1/en not_active Expired - Lifetime
- 2004-04-12 CN CNB2004100328239A patent/CN100384086C/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014157907A1 (ko) * | 2013-03-25 | 2014-10-02 | 주식회사 우진 | 고온용 초음파 센서 및 그 제조방법 |
US9494453B2 (en) | 2013-03-25 | 2016-11-15 | Woojin Inc. | Ultrasonic sensor for high temperature and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN1543062A (zh) | 2004-11-03 |
ATE484101T1 (de) | 2010-10-15 |
EP1467483B1 (en) | 2010-10-06 |
CN100384086C (zh) | 2008-04-23 |
JP4096787B2 (ja) | 2008-06-04 |
JP2004320136A (ja) | 2004-11-11 |
US7213322B2 (en) | 2007-05-08 |
EP1467483A3 (en) | 2005-03-16 |
EP1467483A2 (en) | 2004-10-13 |
DE602004029413D1 (de) | 2010-11-18 |
KR100560073B1 (ko) | 2006-03-13 |
US20040200054A1 (en) | 2004-10-14 |
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