KR20040029143A - 유기 박막 트랜지스터용 표면 개질층 - Google Patents

유기 박막 트랜지스터용 표면 개질층 Download PDF

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Publication number
KR20040029143A
KR20040029143A KR10-2004-7003160A KR20047003160A KR20040029143A KR 20040029143 A KR20040029143 A KR 20040029143A KR 20047003160 A KR20047003160 A KR 20047003160A KR 20040029143 A KR20040029143 A KR 20040029143A
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KR
South Korea
Prior art keywords
thin film
sicl
gate dielectric
self
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7003160A
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English (en)
Korean (ko)
Inventor
토미더블유. 켈리
다운브이. 뮈레스
마크제이. 페렐라이트
티모시디. 던바
래리디. 보드맨
테란스피. 스미스
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20040029143A publication Critical patent/KR20040029143A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
KR10-2004-7003160A 2001-09-06 2002-08-26 유기 박막 트랜지스터용 표면 개질층 Ceased KR20040029143A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/947,845 US6433359B1 (en) 2001-09-06 2001-09-06 Surface modifying layers for organic thin film transistors
US09/947,845 2001-09-06
PCT/US2002/027172 WO2003023877A2 (en) 2001-09-06 2002-08-26 Surface modifying layers for organic thin film transistors

Publications (1)

Publication Number Publication Date
KR20040029143A true KR20040029143A (ko) 2004-04-03

Family

ID=25486873

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7003160A Ceased KR20040029143A (ko) 2001-09-06 2002-08-26 유기 박막 트랜지스터용 표면 개질층

Country Status (8)

Country Link
US (1) US6433359B1 (enExample)
EP (1) EP1425806A2 (enExample)
JP (1) JP4511175B2 (enExample)
KR (1) KR20040029143A (enExample)
CN (1) CN100407473C (enExample)
AU (1) AU2002331736A1 (enExample)
TW (1) TWI225708B (enExample)
WO (1) WO2003023877A2 (enExample)

Cited By (10)

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KR100730159B1 (ko) * 2005-11-10 2007-06-19 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이를 구비한 평판표시장치, 상기유기 박막 트랜지스터의 제조방법
KR100772662B1 (ko) * 2006-02-01 2007-11-02 학교법인 포항공과대학교 전계 효과 전하 이동도를 증가시킬 수 있는 유기 박막트랜지스터 및 그 제조방법
KR100777162B1 (ko) * 2005-07-06 2007-12-03 양재우 저전압 유기나노트랜지스터 소자 및 그의 제조방법
KR100858928B1 (ko) * 2007-02-20 2008-09-17 고려대학교 산학협력단 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
KR100858930B1 (ko) * 2006-02-24 2008-09-17 고려대학교 산학협력단 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
KR101275999B1 (ko) * 2006-09-22 2013-06-19 엘지디스플레이 주식회사 박막트랜지스터, 이를 구비하는 표시장치 및 이들의 제조방법
WO2018004093A1 (ko) * 2016-06-30 2018-01-04 숭실대학교산학협력단 유기 반도체 소자 및 그 제조 방법
KR20180001482A (ko) * 2016-06-27 2018-01-04 숭실대학교산학협력단 유기 반도체 소자의 제조 방법
WO2018004219A3 (ko) * 2016-06-27 2018-02-22 숭실대학교 산학협력단 유기 반도체 소자의 제조 방법
US10991894B2 (en) 2015-03-19 2021-04-27 Foundation Of Soongsil University-Industry Cooperation Compound of organic semiconductor and organic semiconductor device using the same

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