ITTO20030145A1 - Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento. - Google Patents

Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento.

Info

Publication number
ITTO20030145A1
ITTO20030145A1 IT000145A ITTO20030145A ITTO20030145A1 IT TO20030145 A1 ITTO20030145 A1 IT TO20030145A1 IT 000145 A IT000145 A IT 000145A IT TO20030145 A ITTO20030145 A IT TO20030145A IT TO20030145 A1 ITTO20030145 A1 IT TO20030145A1
Authority
IT
Italy
Prior art keywords
procedure
manufacture
substrate
field
thin
Prior art date
Application number
IT000145A
Other languages
English (en)
Inventor
Annalisa Bonfiglio
Ornella Sanna
Original Assignee
Infm Istituto Naz Per La Fisi Ca Della Mater
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infm Istituto Naz Per La Fisi Ca Della Mater filed Critical Infm Istituto Naz Per La Fisi Ca Della Mater
Priority to IT000145A priority Critical patent/ITTO20030145A1/it
Priority to EP04715409A priority patent/EP1606833A2/en
Priority to PCT/IB2004/000592 priority patent/WO2004077500A2/en
Priority to US10/547,361 priority patent/US7445954B2/en
Publication of ITTO20030145A1 publication Critical patent/ITTO20030145A1/it
Priority to US12/233,999 priority patent/US20090057660A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
IT000145A 2003-02-28 2003-02-28 Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento. ITTO20030145A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT000145A ITTO20030145A1 (it) 2003-02-28 2003-02-28 Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento.
EP04715409A EP1606833A2 (en) 2003-02-28 2004-02-27 A method of fabricating substrateless thin film field-effect devices and an organic thin film transistor obtainable by the method
PCT/IB2004/000592 WO2004077500A2 (en) 2003-02-28 2004-02-27 A method of fabricating substrateless thin film field-effect devices and an organic thin film transistor obtainable by the method
US10/547,361 US7445954B2 (en) 2003-02-28 2004-02-27 Method of fabricating substrateless thin film field-effect devices and an organic thin film transistor obtainable by the method
US12/233,999 US20090057660A1 (en) 2003-02-28 2008-09-19 Method of fabricating substrateless thin film field-effect devices and an organic thin film transistor obtainable by the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000145A ITTO20030145A1 (it) 2003-02-28 2003-02-28 Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento.

Publications (1)

Publication Number Publication Date
ITTO20030145A1 true ITTO20030145A1 (it) 2004-09-01

Family

ID=32923050

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000145A ITTO20030145A1 (it) 2003-02-28 2003-02-28 Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento.

Country Status (4)

Country Link
US (2) US7445954B2 (it)
EP (1) EP1606833A2 (it)
IT (1) ITTO20030145A1 (it)
WO (1) WO2004077500A2 (it)

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DE10340926A1 (de) * 2003-09-03 2005-03-31 Technische Universität Ilmenau Abteilung Forschungsförderung und Technologietransfer Verfahren zur Herstellung von elektronischen Bauelementen
DE102004016155B3 (de) * 2004-04-01 2006-05-24 Infineon Technologies Ag Kraftsensor mit organischen Feldeffekttransistoren, darauf beruhender Drucksensor, Positionssensor und Fingerabdrucksensor
US7619242B2 (en) * 2005-02-25 2009-11-17 Xerox Corporation Celluloses and devices thereof
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
US7838933B2 (en) * 2006-12-22 2010-11-23 Palo Alto Res Ct Inc Printing method for high performance electronic devices
US7838865B2 (en) * 2006-12-22 2010-11-23 Palo Alto Research Center Incorporated Method for aligning elongated nanostructures
PT103999B (pt) 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
PT103998B (pt) * 2008-03-20 2011-03-10 Univ Nova De Lisboa Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico
JP5322468B2 (ja) * 2008-03-25 2013-10-23 富士フイルム株式会社 放射線検出器の製造方法及び成膜装置
WO2010016207A1 (ja) * 2008-08-04 2010-02-11 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
CN110098328B (zh) * 2019-03-29 2023-10-31 北京大学深圳研究生院 柔性电子器件及其制造方法
CN112378972B (zh) * 2020-09-30 2023-01-10 太原理工大学 一种无标识生物传感器及其制作方法
CN112255291B (zh) * 2020-09-30 2023-01-10 太原理工大学 一种生物传感器及其制作方法
CN112255290A (zh) * 2020-09-30 2021-01-22 太原理工大学 一种具有水溶液稳定性的柔性生物传感器及其制作方法
CN113358723B (zh) * 2021-05-12 2023-08-25 清华大学 一种柔性器件及其制备方法、柔性器件组件和应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100225098B1 (ko) * 1996-07-02 1999-10-15 구자홍 박막트랜지스터의 제조방법
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
JP3547712B2 (ja) * 2001-02-13 2004-07-28 ナノックス株式会社 反射型液晶表示装置とその製造方法
US20020167003A1 (en) * 2001-04-18 2002-11-14 Campbell Ian H. Chemical and biological sensor using organic self-assembled transitors
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
DE10122324A1 (de) * 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung
DE10142913B4 (de) 2001-08-27 2004-03-18 Hahn-Meitner-Institut Berlin Gmbh Vertikale Transistoranordnung mit einem flexiblen, aus Kunststofffolien bestehenden Substrat und Verfahren zu deren Herstellung
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
JP4076749B2 (ja) * 2001-10-15 2008-04-16 富士フイルム株式会社 導電性有機化合物及び電子素子

Also Published As

Publication number Publication date
WO2004077500A2 (en) 2004-09-10
WO2004077500A3 (en) 2005-02-17
US7445954B2 (en) 2008-11-04
EP1606833A2 (en) 2005-12-21
US20090057660A1 (en) 2009-03-05
US20060263953A1 (en) 2006-11-23

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