DE602004021278D1 - Organischer dünnfilm-transistor - Google Patents
Organischer dünnfilm-transistorInfo
- Publication number
- DE602004021278D1 DE602004021278D1 DE602004021278T DE602004021278T DE602004021278D1 DE 602004021278 D1 DE602004021278 D1 DE 602004021278D1 DE 602004021278 T DE602004021278 T DE 602004021278T DE 602004021278 T DE602004021278 T DE 602004021278T DE 602004021278 D1 DE602004021278 D1 DE 602004021278D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- film transistor
- organic thin
- organic
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
- H10K85/6565—Oxadiazole compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003372558A JP4795634B2 (ja) | 2003-10-31 | 2003-10-31 | 有機薄膜トランジスタ |
PCT/JP2004/016293 WO2005043630A1 (ja) | 2003-10-31 | 2004-10-27 | 有機薄膜トランジスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004021278D1 true DE602004021278D1 (de) | 2009-07-09 |
Family
ID=34544029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004021278T Active DE602004021278D1 (de) | 2003-10-31 | 2004-10-27 | Organischer dünnfilm-transistor |
Country Status (7)
Country | Link |
---|---|
US (1) | US7714319B2 (de) |
EP (1) | EP1679747B1 (de) |
JP (1) | JP4795634B2 (de) |
KR (1) | KR20060113682A (de) |
CN (1) | CN100454581C (de) |
DE (1) | DE602004021278D1 (de) |
WO (1) | WO2005043630A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100584719B1 (ko) * | 2004-11-18 | 2006-05-30 | 한국전자통신연구원 | 쓰리-게이트 전계효과 분자트랜지스터 및 그 제조방법 |
KR100786946B1 (ko) * | 2005-06-30 | 2007-12-17 | 주식회사 엘지화학 | 유기 박막 트랜지스터 |
US7855289B2 (en) | 2005-08-04 | 2010-12-21 | Sirtris Pharmaceuticals, Inc. | Sirtuin modulating compounds |
US8093401B2 (en) | 2005-08-04 | 2012-01-10 | Sirtris Pharmaceuticals, Inc. | Sirtuin modulating compounds |
US8088928B2 (en) | 2005-08-04 | 2012-01-03 | Sirtris Pharmaceuticals, Inc. | Sirtuin modulating compounds |
WO2007034282A2 (en) * | 2005-09-19 | 2007-03-29 | Pfizer Products Inc. | Diaryl-imidazole compounds condensed with a heterocycle as c3a receptor antagonists |
US7521710B2 (en) * | 2006-02-16 | 2009-04-21 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor |
KR101279296B1 (ko) * | 2006-04-17 | 2013-06-26 | 엘지디스플레이 주식회사 | 유기 반도체 구조물, 이의 제조 방법, 이를 이용한 유기박막 트랜지스터 및 이의 제조 방법 및 이를 이용한표시장치 |
KR20090091287A (ko) * | 2006-11-17 | 2009-08-27 | 니혼 메디피직스 가부시키가이샤 | 신규 아밀로이드 친화성 화합물 |
CL2008001822A1 (es) | 2007-06-20 | 2009-03-13 | Sirtris Pharmaceuticals Inc | Compuestos derivados de tiazolo[5,4-b]piridina; composicion farmaceutica que comprende a dichos compuestos; y uso del compuesto en el tratamiento de la resistencia a la insulina, sindrome metabolico, diabetes, entre otras. |
US7879688B2 (en) * | 2007-06-29 | 2011-02-01 | 3M Innovative Properties Company | Methods for making electronic devices with a solution deposited gate dielectric |
US20090001356A1 (en) * | 2007-06-29 | 2009-01-01 | 3M Innovative Properties Company | Electronic devices having a solution deposited gate dielectric |
US7910684B2 (en) * | 2007-09-06 | 2011-03-22 | Xerox Corporation | Diketopyrrolopyrrole-based derivatives for thin film transistors |
WO2009057577A1 (ja) * | 2007-10-30 | 2009-05-07 | Nihon Medi-Physics Co., Ltd. | 新規アミロイド親和性化合物の使用及び製造方法 |
JP5279316B2 (ja) * | 2008-03-31 | 2013-09-04 | 株式会社半導体エネルギー研究所 | 有機金属錯体、発光素子、及び発光装置 |
JP4561934B2 (ja) * | 2008-11-19 | 2010-10-13 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ |
EP2376502B1 (de) | 2008-12-19 | 2015-06-17 | GlaxoSmithKline LLC | Thiazolopyridin-sirtuin-modulierende verbindungen |
DE102009009277B4 (de) * | 2009-02-17 | 2023-12-07 | Merck Patent Gmbh | Organische elektronische Vorrichtung, Verfahren zu deren Herstellung und Verwendung von Verbindungen |
US8653527B2 (en) * | 2009-03-13 | 2014-02-18 | Konica Minolta Holdings, Inc. | Thin film transistor and method for manufacturing the same |
CN102117887A (zh) * | 2009-12-31 | 2011-07-06 | 中国科学院微电子研究所 | 一种低电压有机薄膜晶体管及其制备方法 |
TWI422573B (zh) * | 2010-02-11 | 2014-01-11 | Nat Univ Tsing Hua | 有機薄膜電晶體暨其製備方法 |
CN103709181B (zh) * | 2012-09-29 | 2016-06-22 | 昆山维信诺显示技术有限公司 | 含咪唑并[1,2-a]吡啶基团的稠环芳烃衍生物及其应用 |
CN103788116B (zh) * | 2012-10-30 | 2016-06-22 | 昆山维信诺显示技术有限公司 | 含咪唑[1,2-a]并吡啶基团的蒽类电致发光材料及其应用 |
JP6454974B2 (ja) * | 2013-03-29 | 2019-01-23 | 株式会社リコー | 金属酸化物膜形成用塗布液、金属酸化物膜の製造方法、及び電界効果型トランジスタの製造方法 |
US9926316B2 (en) * | 2016-03-03 | 2018-03-27 | The Cleveland Clinic Foundation | Antitumor derivatives for differentiation therapy |
WO2018045071A1 (en) | 2016-08-31 | 2018-03-08 | Agios Pharmaceuticals, Inc. | Inhibitors of cellular metabolic processes |
JP7050927B2 (ja) * | 2018-07-13 | 2022-04-08 | 富士フイルム株式会社 | 光電変換素子、撮像素子、光センサ、化合物 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10312711A (ja) * | 1997-03-10 | 1998-11-24 | Dainippon Printing Co Ltd | 液晶性電荷輸送材料 |
US6224787B1 (en) * | 1997-03-10 | 2001-05-01 | Dai Nippon Printing Co., Ltd. | Liquid crystalline charge transport material |
JP2000282022A (ja) * | 1999-03-31 | 2000-10-10 | Fuji Photo Film Co Ltd | 発色性組成物及び発色記録材料 |
US6720572B1 (en) * | 1999-06-25 | 2004-04-13 | The Penn State Research Foundation | Organic light emitters with improved carrier injection |
US6420057B1 (en) * | 1999-07-05 | 2002-07-16 | Konica Corporation | Organic electroluminescent element |
JP3968966B2 (ja) * | 1999-07-05 | 2007-08-29 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子 |
US6429040B1 (en) * | 2000-04-06 | 2002-08-06 | Agere Systems Guardian Corp. | Device comprising a bipolar semi-conducting film |
JP4290858B2 (ja) * | 2000-06-12 | 2009-07-08 | 富士フイルム株式会社 | 有機電界発光素子 |
JP2002100420A (ja) * | 2000-09-25 | 2002-04-05 | Konica Corp | 光電変換効率が良好で耐久性に優れた光電変換材料用半導体、光電変換素子、太陽電池 |
US6884093B2 (en) * | 2000-10-03 | 2005-04-26 | The Trustees Of Princeton University | Organic triodes with novel grid structures and method of production |
CN100397678C (zh) * | 2000-12-26 | 2008-06-25 | Lg化学株式会社 | 包含具有p-型半导体特性的有机化合物的电子器件 |
JP2002231325A (ja) * | 2001-01-31 | 2002-08-16 | Konica Corp | 光電変換素子及び光電気化学電池 |
JP2003101031A (ja) * | 2001-09-25 | 2003-04-04 | Ricoh Co Ltd | 能動素子及びそれを有する表示素子 |
JP2003187983A (ja) * | 2001-12-17 | 2003-07-04 | Ricoh Co Ltd | 有機elトランジスタ |
WO2003080732A1 (fr) * | 2002-03-26 | 2003-10-02 | Dai Nippon Printing Co., Ltd. | Materiau semi-conducteur organique, structure semi-conductrice organique et dispositif semi-conducteur organique |
US6861664B2 (en) * | 2003-07-25 | 2005-03-01 | Xerox Corporation | Device with n-type semiconductor |
-
2003
- 2003-10-31 JP JP2003372558A patent/JP4795634B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-27 EP EP04793326A patent/EP1679747B1/de not_active Not-in-force
- 2004-10-27 US US10/577,325 patent/US7714319B2/en not_active Expired - Fee Related
- 2004-10-27 WO PCT/JP2004/016293 patent/WO2005043630A1/ja active Application Filing
- 2004-10-27 KR KR1020067008367A patent/KR20060113682A/ko not_active Application Discontinuation
- 2004-10-27 CN CNB2004800394968A patent/CN100454581C/zh not_active Expired - Fee Related
- 2004-10-27 DE DE602004021278T patent/DE602004021278D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
JP2005136317A (ja) | 2005-05-26 |
EP1679747B1 (de) | 2009-05-27 |
JP4795634B2 (ja) | 2011-10-19 |
CN1902761A (zh) | 2007-01-24 |
CN100454581C (zh) | 2009-01-21 |
US7714319B2 (en) | 2010-05-11 |
EP1679747A4 (de) | 2008-07-09 |
KR20060113682A (ko) | 2006-11-02 |
WO2005043630A1 (ja) | 2005-05-12 |
US20070120111A1 (en) | 2007-05-31 |
EP1679747A1 (de) | 2006-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |