DE10394197D2 - Organischer Feldeffekt Transistor, integrierter Schaltkreis - Google Patents

Organischer Feldeffekt Transistor, integrierter Schaltkreis

Info

Publication number
DE10394197D2
DE10394197D2 DE10394197T DE10394197T DE10394197D2 DE 10394197 D2 DE10394197 D2 DE 10394197D2 DE 10394197 T DE10394197 T DE 10394197T DE 10394197 T DE10394197 T DE 10394197T DE 10394197 D2 DE10394197 D2 DE 10394197D2
Authority
DE
Germany
Prior art keywords
integrated circuit
field effect
effect transistor
organic field
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10394197T
Other languages
English (en)
Inventor
Walter Fix
Andreas Ullmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE10394197T priority Critical patent/DE10394197D2/de
Application granted granted Critical
Publication of DE10394197D2 publication Critical patent/DE10394197D2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
DE10394197T 2003-01-14 2003-12-08 Organischer Feldeffekt Transistor, integrierter Schaltkreis Expired - Fee Related DE10394197D2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10394197T DE10394197D2 (de) 2003-01-14 2003-12-08 Organischer Feldeffekt Transistor, integrierter Schaltkreis

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10301086 2003-01-14
PCT/DE2003/004036 WO2004068608A2 (de) 2003-01-14 2003-12-08 Organischer feldeffekt transistor, integrierter schaltkreis
DE10394197T DE10394197D2 (de) 2003-01-14 2003-12-08 Organischer Feldeffekt Transistor, integrierter Schaltkreis

Publications (1)

Publication Number Publication Date
DE10394197D2 true DE10394197D2 (de) 2005-12-01

Family

ID=32797260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10394197T Expired - Fee Related DE10394197D2 (de) 2003-01-14 2003-12-08 Organischer Feldeffekt Transistor, integrierter Schaltkreis

Country Status (8)

Country Link
US (1) US20060145140A1 (de)
EP (1) EP1584113A2 (de)
JP (1) JP2006513578A (de)
KR (1) KR100745570B1 (de)
CN (1) CN1757123A (de)
AU (1) AU2003299265A1 (de)
DE (1) DE10394197D2 (de)
WO (1) WO2004068608A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100669720B1 (ko) * 2004-08-06 2007-01-16 삼성에스디아이 주식회사 평판 디스플레이 장치
DE102005009819A1 (de) * 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
JP2007123773A (ja) * 2005-10-31 2007-05-17 Fuji Electric Holdings Co Ltd 薄膜トランジスタ、及びその製造方法
US20080128685A1 (en) * 2006-09-26 2008-06-05 Hiroyuki Honda Organic semiconductor device, manufacturing method of same, organic transistor array, and display
DE102006047388A1 (de) * 2006-10-06 2008-04-17 Polyic Gmbh & Co. Kg Feldeffekttransistor sowie elektrische Schaltung
JP2010040897A (ja) * 2008-08-07 2010-02-18 Sony Corp 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器
DE102009009442A1 (de) 2009-02-18 2010-09-09 Polylc Gmbh & Co. Kg Organische Elektronikschaltung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069214B2 (ja) * 1984-09-27 1994-02-02 株式会社東芝 薄膜集積回路の製造方法
JPS6230375A (ja) * 1985-07-31 1987-02-09 Fujitsu Ltd 薄膜トランジスタとその製造方法
TW454101B (en) * 1995-10-04 2001-09-11 Hitachi Ltd In-plane field type liquid crystal display device comprising liquid crystal molecules with more than two different kinds of reorientation directions and its manufacturing method
US6528816B1 (en) * 1998-06-19 2003-03-04 Thomas Jackson Integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
ATE344535T1 (de) 1999-07-06 2006-11-15 Elmos Semiconductor Ag Cmos kompatibler soi-prozess
EP1208603A1 (de) * 1999-08-31 2002-05-29 E Ink Corporation Transistor für eine elektronische anzeigevorrichtung
WO2001027998A1 (en) * 1999-10-11 2001-04-19 Koninklijke Philips Electronics N.V. Integrated circuit
KR100654158B1 (ko) * 1999-10-25 2006-12-05 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치
US6284562B1 (en) * 1999-11-17 2001-09-04 Agere Systems Guardian Corp. Thin film transistors
BR0016661B1 (pt) * 1999-12-21 2013-11-26 Métodos para formação de um dispositivo eletrônico, dispositivo eletrônico e dispositivo de exibição
EP1186042A1 (de) * 2000-03-28 2002-03-13 Koninklijke Philips Electronics N.V. Integrierter schaltkreis mit programmierbarem speicherelement

Also Published As

Publication number Publication date
WO2004068608A8 (de) 2005-08-04
EP1584113A2 (de) 2005-10-12
KR20050103195A (ko) 2005-10-27
US20060145140A1 (en) 2006-07-06
AU2003299265A8 (en) 2004-08-23
AU2003299265A1 (en) 2004-08-23
KR100745570B1 (ko) 2007-08-03
CN1757123A (zh) 2006-04-05
WO2004068608A2 (de) 2004-08-12
JP2006513578A (ja) 2006-04-20
WO2004068608A3 (de) 2004-10-14

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee