DE602004026395D1 - Heteroübergang-Bipolartransistor - Google Patents
Heteroübergang-BipolartransistorInfo
- Publication number
- DE602004026395D1 DE602004026395D1 DE602004026395T DE602004026395T DE602004026395D1 DE 602004026395 D1 DE602004026395 D1 DE 602004026395D1 DE 602004026395 T DE602004026395 T DE 602004026395T DE 602004026395 T DE602004026395 T DE 602004026395T DE 602004026395 D1 DE602004026395 D1 DE 602004026395D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- heterojunction bipolar
- heterojunction
- transistor
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003388187A JP2005150531A (ja) | 2003-11-18 | 2003-11-18 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602004026395D1 true DE602004026395D1 (de) | 2010-05-20 |
Family
ID=34431548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602004026395T Active DE602004026395D1 (de) | 2003-11-18 | 2004-11-03 | Heteroübergang-Bipolartransistor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7304333B2 (de) |
| EP (1) | EP1533849B1 (de) |
| JP (1) | JP2005150531A (de) |
| CN (1) | CN100454573C (de) |
| DE (1) | DE602004026395D1 (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7425726B2 (en) * | 2004-05-19 | 2008-09-16 | Avago Technologies Fiber Ip Pte Ltd. | Electroabsorption modulators and methods of making the same |
| JP2006351752A (ja) * | 2005-06-15 | 2006-12-28 | Mitsubishi Electric Corp | 半導体装置 |
| US8866194B2 (en) | 2006-09-28 | 2014-10-21 | Semiconductor Components Industries, Llc | Semiconductor device |
| JP5341327B2 (ja) * | 2006-09-28 | 2013-11-13 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
| JP2012099651A (ja) * | 2010-11-02 | 2012-05-24 | Toshiba Corp | 発光素子 |
| TWI456755B (zh) * | 2011-05-11 | 2014-10-11 | Univ Nat Kaohsiung Normal | 變晶性積體化雙極場效電晶體 |
| CN103177939B (zh) * | 2013-03-05 | 2016-04-20 | 中国科学院半导体研究所 | 一种硅基半绝缘iii-v族材料的制备方法 |
| WO2015005037A1 (ja) | 2013-07-10 | 2015-01-15 | 株式会社村田製作所 | 半導体装置 |
| US9231088B2 (en) * | 2014-01-16 | 2016-01-05 | Triquint Semiconductor, Inc. | Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor |
| US10263125B2 (en) * | 2014-05-16 | 2019-04-16 | Qorvo Us, Inc. | Varactor diode with heterostructure |
| JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ | 半導体構造と超格子とを用いた高度電子デバイス |
| WO2015181648A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | An optoelectronic device |
| WO2015181656A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | Electronic devices comprising n-type and p-type superlattices |
| US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
| JP2018101652A (ja) * | 2016-12-19 | 2018-06-28 | 株式会社村田製作所 | バイポーラトランジスタ及びその製造方法 |
| JP2019075424A (ja) * | 2017-10-13 | 2019-05-16 | 株式会社村田製作所 | ヘテロ接合バイポーラトランジスタ |
| TWI643337B (zh) * | 2017-10-17 | 2018-12-01 | 全新光電科技股份有限公司 | 具有能隙漸變的電洞阻隔層之異質接面雙極性電晶體結構 |
| TWI691085B (zh) * | 2018-11-20 | 2020-04-11 | 全新光電科技股份有限公司 | 具堅固性的異質接面雙極性電晶體結構 |
| CN113130638A (zh) * | 2020-01-14 | 2021-07-16 | 全新光电科技股份有限公司 | 高坚固性的异质结双极型晶体管 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH022629A (ja) | 1988-06-17 | 1990-01-08 | Nec Corp | バイポーラトランジスタ及びその製造方法 |
| US5132764A (en) | 1991-03-21 | 1992-07-21 | Texas Instruments Incorporated | Multilayer base heterojunction bipolar transistor |
| JPH07326629A (ja) | 1994-06-02 | 1995-12-12 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合型バイポーラトランジスタ |
| JPH08288300A (ja) * | 1995-04-12 | 1996-11-01 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合バイポーラトランジスタ |
| JPH10321640A (ja) | 1997-05-16 | 1998-12-04 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6563145B1 (en) * | 1999-04-19 | 2003-05-13 | Chang Charles E | Methods and apparatus for a composite collector double heterojunction bipolar transistor |
| US6674103B2 (en) | 2000-07-31 | 2004-01-06 | The Regents Of The University Of California | HBT with nitrogen-containing current blocking base collector interface and method for current blocking |
| US6847060B2 (en) | 2000-11-27 | 2005-01-25 | Kopin Corporation | Bipolar transistor with graded base layer |
| JP4056226B2 (ja) | 2001-02-23 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP2002343802A (ja) | 2001-05-16 | 2002-11-29 | Hitachi Ltd | 半導体装置およびそれを搭載した電子装置 |
| JP2002359249A (ja) | 2001-05-31 | 2002-12-13 | Matsushita Electric Ind Co Ltd | 化合物半導体装置及びその製造方法 |
| JP3507828B2 (ja) | 2001-09-11 | 2004-03-15 | シャープ株式会社 | ヘテロ接合バイポーラトランジスタ及びその製造方法 |
| JP2003086602A (ja) | 2001-09-14 | 2003-03-20 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合バイポーラトランジスタ |
| JP3573737B2 (ja) | 2002-01-18 | 2004-10-06 | Ｎｅｃ化合物デバイス株式会社 | ヘテロ接合バイポーラ・トランジスタおよび半導体集積回路 |
| JP2003219213A (ja) | 2002-01-21 | 2003-07-31 | Futaba Corp | 携帯型文字図形拡大表示器 |
| JP2003297849A (ja) | 2002-04-05 | 2003-10-17 | Toshiba Corp | ヘテロ接合バイポーラトランジスタ及びその製造方法 |
| JP3629247B2 (ja) | 2002-04-18 | 2005-03-16 | Ｎｅｃ化合物デバイス株式会社 | ダブルヘテロ接合バイポーラ・トランジスタ |
| JP2004022818A (ja) | 2002-06-17 | 2004-01-22 | Toshiba Corp | ダブルへテロ接合バイポーラトランジスタ |
-
2003
- 2003-11-18 JP JP2003388187A patent/JP2005150531A/ja active Pending
-
2004
- 2004-10-29 US US10/975,957 patent/US7304333B2/en not_active Expired - Fee Related
- 2004-11-03 DE DE602004026395T patent/DE602004026395D1/de active Active
- 2004-11-03 EP EP04026031A patent/EP1533849B1/de not_active Expired - Fee Related
- 2004-11-18 CN CNB2004100948000A patent/CN100454573C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1533849A3 (de) | 2005-06-08 |
| EP1533849A2 (de) | 2005-05-25 |
| EP1533849B1 (de) | 2010-04-07 |
| CN1619830A (zh) | 2005-05-25 |
| US7304333B2 (en) | 2007-12-04 |
| CN100454573C (zh) | 2009-01-21 |
| JP2005150531A (ja) | 2005-06-09 |
| US20050104088A1 (en) | 2005-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: RENESAS ELECTRONICS CORP., KAWASAKI-SHI, KANAG, JP |
|
| 8364 | No opposition during term of opposition |