DE60312102D1 - Heteroübergang-Bipolartransistor - Google Patents

Heteroübergang-Bipolartransistor

Info

Publication number
DE60312102D1
DE60312102D1 DE60312102T DE60312102T DE60312102D1 DE 60312102 D1 DE60312102 D1 DE 60312102D1 DE 60312102 T DE60312102 T DE 60312102T DE 60312102 T DE60312102 T DE 60312102T DE 60312102 D1 DE60312102 D1 DE 60312102D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
heterojunction bipolar
heterojunction
transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60312102T
Other languages
English (en)
Other versions
DE60312102T2 (de
Inventor
Motoji Yagura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60312102D1 publication Critical patent/DE60312102D1/de
Publication of DE60312102T2 publication Critical patent/DE60312102T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE60312102T 2002-10-30 2003-10-16 Heteroübergang-Bipolartransistor Expired - Lifetime DE60312102T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002316011 2002-10-30
JP2002316011 2002-10-30
JP2003318668 2003-09-10
JP2003318668A JP2004172582A (ja) 2002-10-30 2003-09-10 ヘテロ接合バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
DE60312102D1 true DE60312102D1 (de) 2007-04-12
DE60312102T2 DE60312102T2 (de) 2007-10-31

Family

ID=32095468

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60312102T Expired - Lifetime DE60312102T2 (de) 2002-10-30 2003-10-16 Heteroübergang-Bipolartransistor

Country Status (6)

Country Link
US (1) US7030462B2 (de)
EP (1) EP1416539B1 (de)
JP (1) JP2004172582A (de)
KR (1) KR100514109B1 (de)
DE (1) DE60312102T2 (de)
TW (1) TWI230421B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396731B1 (en) * 2004-10-15 2008-07-08 Hrl Laboratories, Llc Method for preparing a non-self-aligned heterojunction bipolar transistor with a small emitter-to-base spacing
US7875523B1 (en) 2004-10-15 2011-01-25 Hrl Laboratories, Llc HBT with emitter electrode having planar side walls
US7598148B1 (en) 2004-10-15 2009-10-06 Fields Charles H Non-self-aligned heterojunction bipolar transistor and a method for preparing a non-self-aligned heterojunction bipolar transistor
FR2888664B1 (fr) * 2005-07-18 2008-05-02 Centre Nat Rech Scient Procede de realisation d'un transistor bipolaire a heterojonction
US8796149B1 (en) 2013-02-18 2014-08-05 International Business Machines Corporation Collector-up bipolar junction transistors in BiCMOS technology
WO2014148194A1 (ja) 2013-03-19 2014-09-25 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
JP2016184675A (ja) 2015-03-26 2016-10-20 住友化学株式会社 ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ
JP2018010896A (ja) * 2016-07-11 2018-01-18 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
JP2022142223A (ja) * 2021-03-16 2022-09-30 本田技研工業株式会社 残存寿命予測方法、残存寿命予測システム及び車両

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116455A (en) * 1991-01-24 1992-05-26 Spire Corporation Process of making strain-free, carbon-doped epitaxial layers and products so made
JP3314183B2 (ja) 1992-05-20 2002-08-12 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ
JPH0637015A (ja) 1992-07-21 1994-02-10 Nec Corp セレン化亜鉛結晶の製造方法
US5682046A (en) * 1993-08-12 1997-10-28 Fujitsu Limited Heterojunction bipolar semiconductor device and its manufacturing method
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
DE19834491A1 (de) * 1998-07-31 2000-02-03 Daimler Chrysler Ag Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors
JP2000323491A (ja) 1999-05-06 2000-11-24 Nec Corp ヘテロ接合バイポーラトランジスタ及びその製造方法
JP3392788B2 (ja) * 1999-08-19 2003-03-31 シャープ株式会社 半導体装置
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
FR2803102B1 (fr) * 1999-12-23 2002-03-22 Thomson Csf Transistor bipolaire a heterojonction a collecteur en haut et procede de realisation
JP3998408B2 (ja) * 2000-09-29 2007-10-24 株式会社東芝 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20040089875A1 (en) 2004-05-13
TW200416896A (en) 2004-09-01
DE60312102T2 (de) 2007-10-31
KR100514109B1 (ko) 2005-09-09
KR20040038855A (ko) 2004-05-08
JP2004172582A (ja) 2004-06-17
EP1416539A3 (de) 2005-01-26
TWI230421B (en) 2005-04-01
EP1416539A2 (de) 2004-05-06
US7030462B2 (en) 2006-04-18
EP1416539B1 (de) 2007-02-28

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