TWI456755B - 變晶性積體化雙極場效電晶體 - Google Patents

變晶性積體化雙極場效電晶體 Download PDF

Info

Publication number
TWI456755B
TWI456755B TW100116580A TW100116580A TWI456755B TW I456755 B TWI456755 B TW I456755B TW 100116580 A TW100116580 A TW 100116580A TW 100116580 A TW100116580 A TW 100116580A TW I456755 B TWI456755 B TW I456755B
Authority
TW
Taiwan
Prior art keywords
layer
undoped
field effect
effect transistor
doping
Prior art date
Application number
TW100116580A
Other languages
English (en)
Other versions
TW201246533A (en
Inventor
Jung Hui Tsai
Original Assignee
Univ Nat Kaohsiung Normal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Kaohsiung Normal filed Critical Univ Nat Kaohsiung Normal
Priority to TW100116580A priority Critical patent/TWI456755B/zh
Publication of TW201246533A publication Critical patent/TW201246533A/zh
Application granted granted Critical
Publication of TWI456755B publication Critical patent/TWI456755B/zh

Links

Landscapes

  • Bipolar Transistors (AREA)

Claims (15)

  1. 一種變晶性積體化雙極場效電晶體，包含：一未摻雜GaAs半導體基板；一位於該未摻雜GaAs半導體基板上之In0.52 Ga0.48 P至InP未摻雜漸變層；一位於該In0.52 Ga0.48 P至InP未摻雜漸變層上之未摻雜InP層；一位於該未摻雜InP層上之n+ 型摻雜In0.53 Ga0.47 As次集極層；一位於該n+ 型摻雜In0.53 Ga0.47 As次集極層上之n- 型摻雜In0.53 Ga0.47 As集極層；一位於該n- 型摻雜In0.53 Ga0.47 As集極層上之p+ 型摻雜In0.53 Ga0.47 As基極層；一位於該p+ 型摻雜In0.53 Ga0.47 As基極層上之第一未摻雜In0.53 Ga0.47 As間隙層；一位於該未摻雜In0.53 Ga0.47 As間隙層上之n+ 型摻雜單原子層；一位於該n+ 型摻雜單原子層上之第二未摻雜In0.53 Ga0.47 As間隙層；一位於該第二未摻雜In0.53 Ga0.47 As間隙層上之n型摻雜InP射極層；一位於該n型摻雜InP射極層上之n+ 型摻雜In0.53 Ga0.47 As射極蓋層；一位於該n+ 型摻雜In0.53 Ga0.47 As射極蓋層上之未摻雜InP阻隔層；一位於該未摻雜InP阻隔層上之n+ 型摻雜In0.53 Ga0.47 As通道層；一位於該n+ 型摻雜In0.53 Ga0.47 As通道層上之未摻雜InP閘極層；一位於該未摻雜InP閘極層上之n+ 型摻雜In0.53 Ga0.47 As歐姆接觸層。
  2. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該In0.52 Ga0.48 P至InP未摻雜漸變層具有一範圍介於7500～20000埃的厚度。
  3. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該未摻雜InP層具有一範圍介於1000～3500埃的厚度。
  4. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該n+ 型摻雜In0.53 Ga0.47 As次集極層具有一範圍介於2000～5000埃的厚度，及一濃度範圍為n+ =1×1018 ～4×1019 原子cm-3 的摻雜。
  5. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該n- 型摻雜In0.53 Ga0.47 As集極層具有一範圍介於2000～10000埃的厚度，及一濃度範圍為n- =1×1016 ～8×1016 原子cm-3 的摻雜。
  6. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該p+ 型摻雜In0.53 Ga0.47 As基極層具有一範圍介於500～2000埃的厚度，及一濃度範圍為p+ =3×1018 ～4×1019 原子cm-3 的摻雜。
  7. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該第一未摻雜In0.53 Ga0.47 As間隙層具有一範圍介於30～200埃的厚度。
  8. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該n+ 型摻雜單原子層具有一濃度範圍為n+ =1×1012 ～4×1012 原子cm-2 的摻雜。
  9. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，該第二未摻雜In0.53 Ga0.47 As間隙層具有一範圍介於30～200埃的厚度。
  10. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該n型摻雜InP射極層具有一範圍介於500～2000埃的厚度，及一濃度範圍為n=1×1017 ～8×1017 原子cm-3 的摻雜。
  11. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該n+ 型摻雜In0.53 Ga0.47 As射極蓋層具有一範圍介於1000～5000埃的厚度，及一濃度範圍為n+ =3×1018 ～3×1019 原子cm-3 的摻雜。
  12. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該未摻雜InP阻隔層具有一範圍介於1000～5000埃的厚度。
  13. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該n+ 型摻雜In0.53 Ga0.47 As通道層具有一範圍介於100～800埃的厚度，及一濃度範圍為n+ =1×1018 ～5×1018 原子cm-3 的摻雜。
  14. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該未摻雜InP閘極層具有一範圍介於200～800埃的厚度。
  15. 如申請專利範圍第1項之變晶性積體化雙極場效電晶體，其中該n+ 型摻雜In0.53 Ga0.47 As歐姆接觸層具有一範圍介於200～500埃的厚度，及一濃度範圍為n+ =3×1018 ～3×1019 原子cm-3 的摻雜。
TW100116580A 2011-05-11 2011-05-11 變晶性積體化雙極場效電晶體 TWI456755B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100116580A TWI456755B (zh) 2011-05-11 2011-05-11 變晶性積體化雙極場效電晶體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100116580A TWI456755B (zh) 2011-05-11 2011-05-11 變晶性積體化雙極場效電晶體

Publications (2)

Publication Number Publication Date
TW201246533A TW201246533A (en) 2012-11-16
TWI456755B true TWI456755B (zh) 2014-10-11

Family

ID=48094570

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100116580A TWI456755B (zh) 2011-05-11 2011-05-11 變晶性積體化雙極場效電晶體

Country Status (1)

Country Link
TW (1) TWI456755B (zh)

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662058A (en) * 1984-11-05 1987-05-05 Honeywell Inc. Self-aligned gate process for ICS based on modulation doped (Al,Ga) As/GaAs FETs
JPH04346262A (ja) * 1991-05-24 1992-12-02 Nec Corp 化合物半導体素子
JPH06252351A (ja) * 1993-02-25 1994-09-09 Olympus Optical Co Ltd 化合物半導体素子
JPH0982898A (ja) * 1995-09-18 1997-03-28 Sharp Corp 半導体装置およびその製造方法
TW319913B (en) * 1997-05-06 1997-11-11 Nat Science Council InGaP/GaAs modulation compositioned channel Exhibit high current
TW441042B (en) * 2000-01-06 2001-06-16 Nat Science Council A GaAs/GaAlInP heterostructure field effect transistor and the method of fabricating the same
TW493224B (en) * 2001-10-22 2002-07-01 Hational Cheng Kung University Composite doped channel heterostructure field-effect transistor
TW550789B (en) * 2002-04-19 2003-09-01 Univ Nat Central Gallium arsenide compound semiconductor element
US6653667B2 (en) * 2001-07-06 2003-11-25 Mitsubishi Denki Kabushiki Kaisha GaAs-based semiconductor field-effect transistor
JP2004014922A (ja) * 2002-06-10 2004-01-15 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタ
US6787822B1 (en) * 1999-07-01 2004-09-07 Picogiga International Heterojunction III-V transistor, in particular HEMT field effect transistor or heterojunction bipolar transistor
JP2005150531A (ja) * 2003-11-18 2005-06-09 Nec Compound Semiconductor Devices Ltd 半導体装置
US7656002B1 (en) * 2007-11-30 2010-02-02 Rf Micro Devices, Inc. Integrated bipolar transistor and field effect transistor
EP2187432A1 (en) * 2008-11-13 2010-05-19 Epcos AG P-type field-effect transistor and method of production
JP2010267793A (ja) * 2009-05-14 2010-11-25 Panasonic Corp 半導体装置及びその製造方法

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662058A (en) * 1984-11-05 1987-05-05 Honeywell Inc. Self-aligned gate process for ICS based on modulation doped (Al,Ga) As/GaAs FETs
JPH04346262A (ja) * 1991-05-24 1992-12-02 Nec Corp 化合物半導体素子
JPH06252351A (ja) * 1993-02-25 1994-09-09 Olympus Optical Co Ltd 化合物半導体素子
JPH0982898A (ja) * 1995-09-18 1997-03-28 Sharp Corp 半導体装置およびその製造方法
TW319913B (en) * 1997-05-06 1997-11-11 Nat Science Council InGaP/GaAs modulation compositioned channel Exhibit high current
US6787822B1 (en) * 1999-07-01 2004-09-07 Picogiga International Heterojunction III-V transistor, in particular HEMT field effect transistor or heterojunction bipolar transistor
TW441042B (en) * 2000-01-06 2001-06-16 Nat Science Council A GaAs/GaAlInP heterostructure field effect transistor and the method of fabricating the same
US6653667B2 (en) * 2001-07-06 2003-11-25 Mitsubishi Denki Kabushiki Kaisha GaAs-based semiconductor field-effect transistor
TW569459B (en) * 2001-07-06 2004-01-01 Mitsubishi Electric Corp GaAs-based semiconductor field-effect transistor
TW493224B (en) * 2001-10-22 2002-07-01 Hational Cheng Kung University Composite doped channel heterostructure field-effect transistor
TW550789B (en) * 2002-04-19 2003-09-01 Univ Nat Central Gallium arsenide compound semiconductor element
JP2004014922A (ja) * 2002-06-10 2004-01-15 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタ
JP2005150531A (ja) * 2003-11-18 2005-06-09 Nec Compound Semiconductor Devices Ltd 半導体装置
US7656002B1 (en) * 2007-11-30 2010-02-02 Rf Micro Devices, Inc. Integrated bipolar transistor and field effect transistor
EP2187432A1 (en) * 2008-11-13 2010-05-19 Epcos AG P-type field-effect transistor and method of production
JP2010267793A (ja) * 2009-05-14 2010-11-25 Panasonic Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
TW201246533A (en) 2012-11-16

Similar Documents

Publication Publication Date Title
USRE48380E1 (en) Vertical power transistor device
US9905636B2 (en) Super-junction structure and method for manufacturing the same and semiconductor device thereof
GB2522597A (en) Lattice mismatched hetero-epitaxial film
EP2613357A3 (en) Field-effect transistor and manufacturing method thereof
WO2008123352A1 (ja) 半導体装置
JP2015135954A5 (zh)
SG170670A1 (en) Method of fabricating a silicon tunneling field effect transistor (tfet) with high drive current
JP2012508455A5 (zh)
WO2006070304A3 (en) Soi device
US20140252499A1 (en) Metal-Oxide-Semiconductor Field-Effect Transistor with Extended Gate Dielectric Layer
JP2017505545A5 (zh)
JP2013191828A5 (zh)
TW201535720A (zh) 定向磊晶之異質接面雙極性電晶體結構
WO2012061632A3 (en) Devices and methodologies related to structures having hbt and fet
JP2013008959A5 (ja) 半導体装置
US20160225905A1 (en) Silicon carbide semiconductor device
JP2012028474A5 (ja) 半導体装置
US8896028B2 (en) Semiconductor device, manufacturing method thereof, protective element, and manufacturing method thereof
CN103855210A (zh) 射频横向双扩散场效应晶体管及其制造方法
GB2487158A (en) High-drive current mosfet
JP2011210901A5 (zh)
EP2706574A3 (en) Semiconductor device
CN103035674B (zh) 射频横向双扩散场效应晶体管及其制造方法
TW200711147A (en) Semiconductor device
TWI456755B (zh) 變晶性積體化雙極場效電晶體

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees