TW201246533A - Metamorphic integrated BiFETs - Google Patents

Abstract

A metamorphic integrated bipolar and field-effect transistors (BiFETs) is disclosed by the present invention. The metamorphic integrated BiFETs are fabricated on low-cost GaAs substrates. Among them, the bipolar transistor of the integrated BiFETs is fabricated on the undoped metamorphic buffer layer which graded from In0.52Ga0.48P to InP, and the device performance with high current gain and low collector-emitter offset voltage for reducing power consumption is achieved. Furthermore, the field-effect transistor is fabricated on the bipolar transistor, and the device characteristics with high drain current, transconductance, and linearity are obtained. The substantial advantages of the metamorphic integrated BiFETs, such as excellent characteristics of bipolar and field-effect transistors, simple structure, and low cost, are included in this invention. The over layers of the integrated devices are only more than four material layers, as compared with the metamorphic bipolar transistor. Consequently, the metamorphic integrated BiFETs are very promising for digital, analog, mixed-mode, and integrated circuit applications.

Description

201246533 VI. Description of the Invention: [Technical Field of the Invention] The present invention discloses a crystallized integrated bipolar field effect transistor. In the basin, indium/magnesium indium gallium (InP/In〇53Ga〇47As) bipolar electro-crystal system ς is constructed in indium gallium phosphide (In〇.52Ga.48ρ) to indium phosphide (Ιηρ) crystal Above the buffer layer, and the indium arsenide/indium gallium oxide field effect crystal system is constructed on the disc copper/desiced indium gallium bipolar transistor, and the whole volume of the element is only more transmorphic bipolar The transistor has four layers of material. The crystallized integrated bipolar field effect transistor of the invention has good characteristics and low cost, and is suitable for use in digital, m ratio, mixed mode signals and integrated circuits. [Prior Art] In recent years, we have come to the principle of “excellence of the crystal technology, various structural matching, superlattice, pseudomorphic stress layer and metamorphic structure. , like springing up, 'continuing new. Heterogeneous junction bipolar transistors (HBTs) have been used in digital and microwave power due to their low Ι/f noise, high speed and high current operation capability. On the other hand, heterostructure field effect transistor field effect Crystals (HFETs) have the advantages of low noise, high input impedance, high density, and low power consumption, and have been widely used in integrated circuits. For HBTs, the InP/In0.53Ga0.47As material system has the following advantages over the InP/In0.53Ga0.47As material layer compared to the gallium arsenide (GaAs) related material system: (1) low surface recombination rate, (2) low effective electron mass, (3) low on-voltage, (4) compatible with long 201246533*; Therefore, in addition to high-speed, low-power consumption and signal amplification, it can be applied to low noise oscillation circuits and optoelectronic integrated circuit applications. On the other hand, a series of _:: HFETs have excellent transistor characteristics. Thanks In. 5 cents. "As in the channel, the higher indium content enables the components to have higher electron mobility and higher saturation speed. In addition, InP/In〇.53Ga. 4 The mountain material system has a large = conduction band discontinuity, so that the component has better carrier limitation capability, and can operate at a larger gate bias to improve current output capability. The performance of components in many applications is much better than the gallium arsenide series. However, since the indium phosphide substrate is expensive and fragile, and has no large substrate size, the process difficulty and production cost are increased in commercial applications. Thus, the growth of crystal-morphic InP/In0.53Ga0.47AS HBTs or HFETs on gallium arsenide substrates has attracted a high commercial interest. In this crystal-morphic structure, the metamorphic buffer layer (SM) Features play a very important role. Its two important functions are as follows: (1) The lattice mismatch between the variable-change InP/InGaAs material system and the gallium-depleted substrate' (2) Fixes the defect in the buffer layer and prevents it from diffusing to the active layer. Therefore, the growth of a crystal-transformed transistor on a gallium arsenide substrate will have both low cost and superior component characteristics of InGaAM. In any event, typically the crystalline buffer layer has a high thermal resistance which will limit the power of the component. For a crystallographic HBT, the thermal resistance is determined by the sub-collector (SUbC〇UeCt〇r) under the collector, the buffer layer, and the substrate. Further, the thermal conductivity (〇.44 W/cm.IC) of the GaAs substrate is lower than that of Inp (〇68 w/cm.K), so that high thermoelectricity P is caused. The thermal resistance can be effectively reduced by the alloy-disorder scattering of the group III atom 201246533 in the buffer layer. However, excessive dislocation will also make the thermal conductivity favorable. Generally, the crystal buffer layer has the following structural modes: (1) grading to A4 As to Al0.48In0.52As on a gallium arsenide substrate; (2) in〇52 on a gallium arsenide substrate (3a〇48p) The material is graded to InP; (3) Inp is directly used as a buffer layer on the gallium arsenide substrate. In the past, Kim et al. have demonstrated that the thermal resistance of the Inp buffer layer is rather low due to the high thermal conductivity of InP. However, arsenic Gallium has a considerable lattice constant difference with InP. If InP is used as the buffer layer directly on the germanium germanium substrate, the surface will be quite rough and have a high defect density. The In〇52Ga〇48P is used to grade the buffer layer to InP. The thermal resistance is also lower than that of A1InAs, so this method will be a good choice. However, the construction of a single component has not met the needs of today's versatile and high-integration, and the construction of a total integrated ΗΒτ on the same substrate. FET (BiFET) can have the above advantages of HBT and FET, can greatly reduce the number of structural layers, and is suitable for digital, analog, mixed-mode signals and microwave integrated circuits. Manufacture of BiFETs to Inp/InGaAs There are very few integrated components A BiFET is produced in a crystallographic manner. SUMMARY OF THE INVENTION A primary object of the present invention is to provide a crystallized integrated bipolar field effect transistor that includes: a non-contained GaAs ♦ conductor substrate; An undoped graded layer on the undoped GaAS semiconductor substrate, an undoped InP layer on the InQ nGw to Inp undoped graded layer, n+ type doped 6 on the undoped InP layer 201246533

In〇.53Ga〇.47As secondary collector layer; one is located in the n+ type doping

v °*53Ga〇 47AS The n-type doped In0_53Ga0.47As collector layer on the second collector layer; _ m is §-type doped In〇.53Ga. · ρ + type doping in the 47As collector layer. a type A pole layer; a first undoped In.53Ga〇.47As gap layer on the p+ type doped InQ 53GaQ WAS base layer; one on the undoped 0.53 vja〇47 As gap layer An n+-type doped monoatomic layer; a second undoped In〇53Ga〇oAs interstitial layer on the n+-type doped monoatomic layer; one located in the _th, undoped In^Ga^As gap layer An n-type doped Inp emitter layer; - an n+ type 濉丄n〇.53Ga〇.47As emitter cap layer on the n-type doped InP emitter layer; and a n+ type doping I r The undoped sentence on the main doping inowGa^As emitter cap layer and the interlayer; the n+ type doping channel layer on the undoped (4) and the spacer layer; - located in the n+ type doping, -. The undoped and indium InP gate layer on the oil channel layer: an n+ type doped in() nGamAs ohmic contact layer on the undoped InP gate layer. Preferred 'The In〇52Ga 〇48p to Tril> 1 A...

The InP unhybridized graded layer has a thickness ranging from 7500 to 20,000 angstroms. Preferably, the undoped InP layer has a thickness ranging from 1 〇〇〇 to 35 () () angstroms. Preferably, the n+ type doped Ιηα is doped to a thickness of from 2,000 to 5,000 angstroms to 4xl 019 atoms cm-3. The wGao.oAs sub-collector has a range ’ and the concentration range is η+=1χΐ〇18

The WamAs collector layer has a range and a concentration range of n_=lxl 〇16. Preferably, the η-type doping InQ $ is between 2000 and 10000 angstroms thick, and the doping of 〜8xl016 atoms cm_3. 201246533 The preferred 'this doping! Between 500~2000 angstroms of thick production, ~ 〇47As base layer has a range of 〇19 original, sub-cm·3 doping: 'and ~ concentration range is Ρ+= 3χ1〇18~ Preferably, the first-undoped in〇.S3Ga is between 30 and 200 angstroms thick. 〇·4 7 As gap layer has a better range 'the n+ type doping single humiliation n+=lxl〇u~4xl〇12 atomic coffee-2 layer has a concentration range is preferred, the second is not Doped In〇5: ° is surrounded by a thickness of 30 to 200 angstroms. The gap layer has a preferred 'the n-type doped Inp emitter layer has a thickness of 2,000 angstroms, and the concentration: ... is doped at 500 ail 〇 ~ 8 x 1017 Ω cm · 3 δ ΐϋ ΐϋ atoms are preferred The n+ type doped In〇.53Ga is surrounded by a thickness of Π) 〇〇 5 Å, and the cap layer: has - dry ~ 3, the center of the core, doping. , agronomic range..., 18 preferred 'the thickness of the undoped Inp barrier layer. The layer has a range of from - to - preferably 'the n + type doping in Δ is between the thickness of the coffee and the angstrom, and the one thick and two of the two channel layers have a range of wo, a sub-hetero. The circumference is -, preferably, the thickness of the undoped Ιηρ gate layer is 800 angstroms /, and the consumption is between 200~

Preferably, the η + -type doped 丨G r . _47As ohmic contact layer has a thickness of 200 to 500 angstroms, and a range of curvatures, and a range of n + = 3xl 〇 i8 8 . 201246533 〜 3xl〇19 atomic em doping. [Embodiment.] The present invention is a high-performance carbonized steel/indium/indium-doped (InP/InGaAs) crystallized integrated bipolar field effect transistor with a high-output electric fairy river. Current gain, low compensation voltage, excellent high-frequency characteristics: FET τ ο οf οf The crystallized integrated bipolar field effect electric body of the present invention, Simple construction 'low cost' is ideal for digital, analog, mixed-mode signals and integrated circuit applications. A crystallized integrated bipolar field effect transistor completed in accordance with a preferred embodiment of the present invention has a structure as shown in FIG. The crystallized integrated bipolar field effect transistor 100 of the present invention comprises a bipolar transistor 1〇1 element region and a field effect transistor 102 element region. An undoped graded layer 104 of Inp, an undoped 111 layer 1〇5, an n+ type doped In〇53Ga^As subcollector layer 106 are sequentially formed on an undoped GaAs semiconductor substrate 103, A η-type doped In〇53Ga() 47As collector layer 1〇7, a P-type doped In〇.53Ga〇.47As base layer 1〇8, an undoped in〇53Ga〇47As gap layer 109 , an n+ 'doped monoatomic layer 11〇, an undoped In0.53Ga〇.47As gap layer m, an n-type doped InP emitter layer 112, an n-type doping in〇53Ga〇.47As shot The cap layer 113, an undoped Inp barrier layer 114, an n-type doped in〇53Ga()47As channel layer (Η, an undoped InP gate layer 116, an n-doped InmGa〇47As ohmic contact) Layer 117. The manufacturing step of the crystallized integrated bipolar field effect transistor of the present invention is sequentially performed in 201246533 as follows: (1) The photoresist covers the element region of the field effect transistor 102, and the bipolar electric aa body 1 〇1 element The region is chemically engraved from the n+ type doped In〇.53Ga〇.47As ohmic contact layer 117 to the n+ type dopant Ino.^GamAs emitter cap layer 113. The emitter metal region is defined, and the evaporation is performed. Emitter metal AnGeNi n + type doping in ^ Ga ^ As emitter cap layer 113; (2) photoresist to cover the field effect transistor 1 〇 2 element area, with the emitter metal as a hard mask 'etched to the The p+ type is infused with the InmGao.oAs base layer 1〇8; (3) the photoresist covers the element field of the field effect transistor 102, and is etched to the n+ type doped InG53Ga〇47As subcollector layer 106, (4) ) The field source has no source metal region in the 1〇2 element region. At the same time, the collector and the bismuth source metal AuGeNi are vapor-deposited, and sintering is performed at a high temperature for a short time to immerse the metal to complete the concentrator. Ohmic contact with the source of the erbium; (5) the photoresist covers the area of the 〇2 element of the field effect transistor, and is plated with AuZn metal on the p + type doped Jn. Above the 53Ga 〇〇 As base layer ι 8 (6) the photoresist covers the bipolar transistor element region, and the source metal is used as a hard mask, and is etched onto the undoped hp gate layer 116; (7) The photoresist covers the area of the bipolar transistor 1〇1 element, and is plated with Au metal over the undoped Inp gate layer 丨丨6 to serve as a gate contact electrode; (8) for double The element isolation (mesa) between the transistor 1〇1 and the field effect transistor. To make the invention easier to understand and implement, please refer to the following examples: In this embodiment, the 1n^GaowP to InP The undoped graded layer 1〇4' has a thickness of 15000A; the undoped Inp layer 1〇5 has a thickness of 15〇〇钇, and the n-type doped inQ 53Ga() 47As secondary collector layer ι〇6 has a thickness of 〇〇和, 10 201246533 The concentration is 1 χ 1019 atom cm·3; the n- penalty i 杂In〇.53Ga〇.47As collector layer 107, thickness 5000A, concentrated 1 9 1λ16, and the degree is 2 χ 〇ΐ6 atoms cm-3; the ρ+ type doped In〇.53Ga〇.47As base layer 1 r — t β is increased by 108, the thickness is 1000Α, and the concentration is 1 x 1 〇19 atoms cm·3; Doping τ„^ ν 〇In〇.53Ga0.47As gap layer 1〇9, thickness 50A; the n+ type doped monoatomic layer"〇; concentration is 2 χ ι〇ι2 atom cm·2; a hetero-In''53Ga〇47As interstitial layer iu, a thickness of 5 〇, the n-type doped InP shot (four) 112, a thickness of 1 〇〇〇A, a concentration & 5x1〇17 atom cm·3; the n+ type doped In 〇53Ga〇47As emitter cover ιΐ3, thickness 3000a The concentration is 1 x 10i9 atoms cm.3; the thickness of the undoped barrier layer 114' is 20001, the n+ type doped In〇53Ga〇47As channel layer 115 has a thickness of 150 A and a concentration of 3 x 1 〇 18 atoms cm_3; The undoped inp gate layer 116 has a thickness of 300 A; the n+ type doped In() 53GaQ47As ohmic contact layer 117' has a thickness of 300 A and a concentration of 1 χ i〇i9 cm·3. The bipolar transistor 101 has an emitter scale of 50 x 50 μηι 2 ; the field-effect transistor has a gate-scale and a source-less spacing of 1 χ 70 μιη 2 and 3 μηι, respectively. The bipolar electromorph 101 in the crystallized integrated bipolar field effect transistor of the present invention is formed by etching away the four layers of the upper layer of the integrated structure. Figure 2 is a band diagram of a bipolar transistor in thermal equilibrium according to an embodiment of the present invention. The energy band diagram includes a scaled steel recorded to a scalar crystallized buffer layer. Fig. 3 is an enlarged energy band diagram of the bipolar transistor 1 〇 1 in thermal equilibrium according to an embodiment of the present invention. Obviously, the potential spike of the base-electrode (Β-Ε) junction can be completely eliminated, because the first undoped In.53Ga〇.47As gap layer 1〇9 and the first The addition of a high-concentration n+-doped monoatomic layer 11〇 to the undoped In0.53Ga〇.47As gap layer 111 can lower the energy band of the emitter of 2012201233, thereby eliminating the barrier peaks and reducing the set- Fig. 4 is a three-terminal current_voltage (ι-ν) characteristic curve of the bipolar transistor 1 为本 according to an embodiment of the present invention. The maximum current is about 13 mA. When the base current Ib = 5 μΑ, the collector-emitter compensation voltage is about 1〇5 mV. Since the barrier peak of the Β·Ε junction is effectively reduced by the η+ type doped monoatomic layer 丨1〇, Therefore, there is a low set-emitter compensation voltage. Figure 5 is a Gummel diagram of the bipolar transistor 1〇1 when the base collector voltage is zero. Obviously, when the collector current Ic = 1 μΑ , its turn-on voltage (turn_on v〇ltage) is 〇4V, this low turn-on voltage*Τ effectively reduces the operating voltage of the component and the set-emitter compensation The voltage is very suitable for low power consumption circuit applications. It is worth noting that when the Vbe voltage is 〇31v, its current gain has reached one. Since the base layer is a small energy gap hmGamAs material, it helps to reduce the Β_Ε driving voltage. νΒΕ. It can also be seen that the 'ideality fact〇r of the element is almost equal to the low current. This means that the electron transmission is dominated by the diffusion mechanism through the B_E junction, and the BE junction The barrier peak should have been removed by the added n-doped monoatomic layer 11. In addition, the base current ideal factor is ~0.2V < VBE < V.4V and 0.4V < VBE < 0.6V The time is 2.09 and 1.94 respectively. This means that the base current is dominated by the composite mechanism. Figure 6 is the current gain versus collector current of the bipolar transistor 1〇1 when the base_collector voltage is zero. Diagram. When the collector current is 1 μΑ and 1 mA, the gain has reached 7 and 132 ′ and the maximum current gain is 255. This large current increase is daily | 人 | InP/IriQ 53GaQ 47 8 8 Heterojunction Large price band is not continuous 12 201246533 value can effectively limit electricity The thickness of the field effect injected from the base into the emitter crystal is thin and the concentration is about the crystallized integrated bipolar field effect transistor 102 of the present invention. The channel is made of in〇53Ga〇47As, which is high in the channel. It is limited by the unfilled #Inp(4) ιΐ6 and the undoped InP barrier layer 114. Figure 7 is a field effect transistor of an embodiment of the present invention! Band diagram of G2 at thermal equilibrium. The doped channel portion is depleted during heat balance, so the field effect transistor of the embodiment of the present invention is depleted. Since the InP/In^Ga^As has a good etching selectivity, the gate metal is easily controlled to be deposited on the #Pon InP closed layer 116, and the discontinuous value AEC of the heterojunction is about 〇.25. This will provide a comparable energy barrier to prevent channel electrons from entering the gate and increasing the gate forward operating voltage. In addition, due to thermal equilibrium, miniband and two-dimensional electron gas (2dEG) have been formed in the Ιη〇 53GaQ 47AS stress-doped channel quantum well, so the effective concentration of the doped channel can be increased to reduce the channel resistance. FIG. 8 is a graph showing the three-terminal current_voltage characteristic of the field effect transistor i 〇 2 according to the embodiment of the present invention. In this depletion element, when the gate-source voltage is zero, the non-source saturation voltage is only 〇.2 V, which is higher than the past-passive channel field effect transistors (DCFETs). low. When the gate voltage is applied to +1.25V, the gate leakage current is still small. When the gate voltage is positive, the depletion region will shrink to the upper doped channel, and

The 2DEG carrier in the InmGao.qAs channel will increase with the gate voltage modulation, and the effective concentration in the doped channel will also increase, and the current in the linear region will rise rapidly. The distance between the source (汲) and the gate is only 1 μπ1, and the parasitic resistance of the gap distance is relatively low (due to the high channel concentration). The source-drain saturation voltage 13 201246533 can be effectively reduced, so it is suitable for signal amplification. The source-bungee operating voltage range is relatively wide. Figure 9 is a graph showing the relationship between extrinsic transconductance and saturation current density for gate voltage when the field effect transistor 102 of the embodiment of the present invention is vDS = +2.5 V. Its threshold voltage is about -0.6 V. The wide gate voltage swing can range from VGS = -0.6V to +1.25 V. This large gate voltage swing reduces third-harmonic distortion and can be applied to both linear and large signal amplifiers. The maximum external mass transfer is 265 mS/mm and the maximum saturation current density is 281 mA/mm. In addition, the saturation current increases linearly with the increase of the gate voltage between -0.3V < VGS < 0.4 V because the channel is heavily doped and very thin. While the present invention has been described by the foregoing embodiments, the invention is not limited by the scope of the invention, and those skilled in the art can make modifications and variations without departing from the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the structure of a crystallized integrated bipolar field effect transistor according to an embodiment of the present invention. Fig. 2 is a diagram showing the energy band of the bipolar transistor of the embodiment of the present invention in thermal equilibrium. Fig. 3 is an enlarged energy band diagram of the bipolar transistor of the embodiment of the present invention in thermal equilibrium. Figure 4 is a graph showing the three-terminal current-electricity of the bipolar transistor of the embodiment of the present invention. Figure 5 is a Gupimel diagram of a bipolar transistor of the embodiment of the invention with a base-collector voltage of zero. Fig. 6 is a graph showing the relationship between the current gain and the collector current of the bipolar transistor of the embodiment of the present invention when the base and collector voltages are zero. Figure 7 is an energy band diagram of the field effect transistor of the embodiment of the present invention in thermal equilibrium. Figure 8 is a graph showing the three-terminal current-voltage characteristic of the field effect transistor of the embodiment of the present invention. Figure 9 is a graph showing the relationship between the external mass transfer and the saturation current density of the field effect transistor of the embodiment of the present invention. [Major component symbol description] 100 00 crystallized integrated bipolar field effect transistor 101 bipolar transistor 1 0 2 field effect transistor 01 03 undoped GaAs semiconductor substrate 104In (K52Ga() 48P to ? Undoped graded layer 105 undoped InP layer n-type doped In〇.53GaG.47As secondary collector layer type 11 doped In〇_53Ga〇.47As collector layer doped In〇.53Ga〇.4 7As Base layer 109 first undoped In〇53Ga〇47as gap layer 110 n-type doped monoatomic layer

S 15 201246533 111 second undoped In〇.53Ga〇.47As gap layer 112 n-type doped InP emitter layer 113 n+ type doped In〇.53Ga〇.47As emitter cap layer 114 undoped InP barrier layer 115 n+? doped In〇53Ga〇.4? As channel layer 116 undoped InP gate layer 117 n+ type doped In〇.53Ga〇.47As ohmic contact layer 16

Claims (1)

201246533 VII. Patent application scope: 1. A crystallized integrated bipolar field effect transistor, comprising: - a wood-doped GaAs semiconductor substrate; and an Ino.nGao·48 on the undoped GaAs semiconductor substrate? To Inp undoped graded layer; - undoped layer on 1 In〇_52Ga〇_48P to InP undoped graded layer - n+ type doped InQ 5 mountain core on the undoped InP layer As sub-collector; a 'type-doped InG.53GaG.47As collector layer on the n+-type doped collector layer; one on the γ-doped In0.53GaQ.47As collector layer a ρ+-doped InG53Gaa layer; a second undoped In〇.53Ga〇.47AS @gap layer on the 〆-type doped In〇oh base layer; one located in the undoped In〇.53Ga ( An n+ type doped monoatomic layer on the .47As gap layer; a second undoped W "7As" layer on the $n+ type doped monoatomic layer; - located in the second undoped In. 5 and. "The type of erbium InP emitter layer on the s gap layer; a gamma-type doped In on the n # 推p inp emitter layer. The .47As emitter cap layer; one is located in the ^ type doping k^ An undoped inp barrier layer on the Ga^As emitter cap layer. An n+ type doping 111〇53 on the undoped W barrier layer is called the oil channel layer at the n-type doped In〇_53Ga〇. The unconnected W gate layer on the 47As channel layer; - on the undoped Inp gate layer < ^ type push-in In0_53Ga0 47As ohmic contact layer. 2. The crystallized product as in claim 1 The body of the bipolar field effect transistor, the medium i In0.52Ga0.48P to inp undoped graded layer has a range of S 17 201246533 between 7500 and 20000 angstroms. 3. As claimed in the first day of the s The variable crystallized integrated bipolar field effect transistor, wherein the undoped InP layer has a thickness ranging from 1000 to 3500 angstroms. 4_ as claimed in the first semester ^ a variable of the daily integrated bipolar field effect transistor 'the _ the n + type doping r., the hetero oh subcollector layer has a thickness ranging from 2000 to 5000 angstroms ,and The concentration range is η+=1χ1〇18 ～4x1019 atomic cm·3 doping. 5. The crystallized integrated bipolar field effect transistor of the first item of claim 1 is zhonghe η-type doped In The 53.53Ga〇.47As collector layer has a thickness ranging from 2000 to 10000 angstroms, and a concentration ranging from n-=lxlol6 to 8xl016 atoms cm_3. 6·If the patent application scope is No. 1 A crystallized integrated bipolar field effect transistor, wherein the ρ + -type doped 〇53Ga〇_47As base layer has a thickness of itch of 500~2000 angstroms and a concentration range of ρ +=3χ1〇18~ 4xl〇19 atomic cm·3 doping. 7. The crystallized integrated bipolar field effect transistor of claim 1, wherein the first undoped 〇53Ga0_47As interstitial layer has a thickness of between 30 and 200 angstroms. 18 201246533 8. The n-type doped monoatomic layer has a concentration range of n+=lxl〇12 〜4χ1 in the case of the patented ribbed M s _ 1 Doping of 〇12 atoms cm-2. 9. For example, if you apply for the patented range of Le 12, the crystallized integrated bipolar field effect transistor, 3 hai second undoped & p ya ino.uGao.oAs gap layer has a range of 30~ 200 angstroms in thickness. 10. For example, Shen Qing's patent scope is called the 曰 曰 ^ 士 A 乐 1 variable crystallized integrated bipolar field effect transistor 'where the η-type doped InP emitter layer has a range 5 〇〇 ~ 2000 angstroms of thickness, and a 嚿 / morning range of n = lxl 〇 17 ~ 8 χ 1 〇 17 atoms cm_3 doping. The n-type doped In〇53Ga〇.47As emitter cap layer has a range of 1000~5〇〇〇λλ in the variable crystallized integrated bipolar field effect transistor of Shenyue patent la 帛1 , m ^ angstrom thickness 'and a concentration range of η + = 3 χ 1018 ~ 3 x l019 atom cm -3 doping. 1 2. As claimed in the scope of the body, wherein the undoped 5000 angstrom thickness. 13 _ apply The variable crystallized integrated bipolar field effect electro-crystal of the first item of the patent range is £19, and the variable-crystalline integrated bipolar field effect electro-crystal 2 InI> barrier layer has a range of 1000~201246533, The n+ type doped In〇.53Ga〇.47As channel layer has a thickness ranging from 100 to 800 angstroms, and a concentration range of η+=1χ1018~5xl018 atoms (1^3 doping. The crystallized integrated bipolar field effect transistor of claim 1, wherein the undoped InP gate layer has a thickness ranging from 200 to 800 angstroms. The variable crystallized integrated bipolar field effect transistor, wherein the η+ type doped In〇.53Ga〇.47As ohmic contact layer has a range of 200 a thickness of ~500 angstroms, and a concentration range of n+=3 χΙΟ18 〜3xl019 atoms cm_3 doping.