CN110310989A - A kind of device architecture of double heterojunction unipolar transistor - Google Patents
A kind of device architecture of double heterojunction unipolar transistor Download PDFInfo
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- CN110310989A CN110310989A CN201910666385.8A CN201910666385A CN110310989A CN 110310989 A CN110310989 A CN 110310989A CN 201910666385 A CN201910666385 A CN 201910666385A CN 110310989 A CN110310989 A CN 110310989A
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- collecting zone
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- 239000000463 material Substances 0.000 claims abstract description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 21
- 239000012808 vapor phase Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 22
- 238000005036 potential barrier Methods 0.000 description 5
- 230000003321 amplification Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000027950 fever generation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention provides a kind of device architectures of double heterojunction unipolar transistor, it is characterized in that, the vertical device structure transported using unipolarity, including emitter region, base area and the collecting zone arranged vertically, base area is between emitter region and collecting zone, emitter region is interchangeable with collecting zone, emitter region and collecting zone use AlGaN material, base area uses GaN material, the GaN material and emitter region of base area and the AlGaN material of collecting zone form two back-to-back schottky junctions, to form AlGaN/GaN/AlGaN double-heterostructure；Emitter, base stage and collector are connected with emitter region, base area and collecting zone respectively.It is disclosed by the invention be a kind of vertical device based on double heterojunction, it can be achieved that normally closed device characteristic, while not vulnerable to the influence of surface charge.
Description
Technical field
The present invention relates to semiconductor devices, are a kind of devices of double heterojunction unipolar transistor based on gallium nitride material
Structure.
Background technique
There is big forbidden bandwidth by III group nitride material of representative of gallium nitride, high electronics is saturated mobility, high electricity
The features such as sub- saturation drift velocity, high critical breakdown electric field, is widely used in including visible light emitting diode, heterogeneous crystallization
Body pipe, ultraviolet detector, high pressure resistant rectifying tube, the multiple fields including high temperature, high frequency, high power device.
The AlGaN/GaN heterojunction structure formed by group III-nitride can be formed with the conductive ditch compared with high electron mobility
Road, therefore have good application in terms of high electron mobility transistor (HEMT).But this kind of HEMT device is open type device
Part can not accomplish the perfect condition of " failure-open circuit " when using as power device.Meanwhile this normally on device needs volume
Outer application reverse bias can just be such that device complete switches off, and the realization of reverse bias requirement is also relatively high, therefore to the wide of device
General use causes certain difficulty.
For this problem, have some resolving ideas at present, be included under grid grade and increase dielectric layer, device is done to grooving grid
Structure, production passivation layer, production P-type layer structure etc..Current existing scheme surrounds planar device expansion, planar device
Vulnerable to surface charge influence and there are the disadvantages in terms of stability.
Summary of the invention
The object of the present invention is to provide a kind of III-nitride material double heterojunction monopole based on thermionic emission principle
Property transistor, the function of normally closed device may be implemented and obtain variable current amplification factor.
In order to achieve the above object, the technical solution of the present invention is to provide a kind of devices of double heterojunction unipolar transistor
Part structure, which is characterized in that the vertical device structure transported using unipolarity, including arrange vertically emitter region, base area and
Collecting zone, between emitter region and collecting zone, emitter region is interchangeable with collecting zone for base area, and emitter region and collecting zone use
AlGaN material, base area use GaN material, and the GaN material and emitter region of base area and the AlGaN material of collecting zone form two back
To the schottky junction of back, to form AlGaN/GaN/AlGaN double-heterostructure；Emitter, base stage and collector difference
It is connected with emitter region, base area and collecting zone.
Preferably, the base area and the emitter region are obtained by way of vapor phase epitaxial growth.
It is disclosed by the invention be a kind of vertical device based on double heterojunction, it can be achieved that normally closed device characteristic, together
When not vulnerable to the influence of surface charge.
Detailed description of the invention
Fig. 1 is GaN double heterojunction transistor device structures schematic diagram；
Fig. 2 is GaN double heterojunction transistor energy band diagram；
Fig. 3 is GaN double heterojunction transistor embodiment；
Fig. 4 is GaN double heterojunction transistor base/emitter region hetero-junctions IV characteristic；
Fig. 5 is GaN double heterojunction transistor base/collecting zone hetero-junctions IV characteristic；
Fig. 6 is GaN double heterojunction transistor output characteristics；
Fig. 7 is GaN double heterojunction transistor alpha parameter saturated characteristic.
Specific embodiment
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate the present invention
Rather than it limits the scope of the invention.In addition, it should also be understood that, after reading the content taught by the present invention, those skilled in the art
Member can make various changes or modifications the present invention, and such equivalent forms equally fall within the application the appended claims and limited
Range.
Disclosed by the invention is that a kind of III-nitride material double heterojunction unipolarity based on thermionic emission principle is brilliant
Body pipe.Its main feature is that the function of normally closed device may be implemented and obtain variable current amplification factor: in conjunction with Fig. 1, this hair
Bright device core is made of emitter region 1, base area 2,3 three parts of collecting zone, and metal electrode is connected with three parts respectively, is formed
Ohmic contact is referred to as emitter 4, base stage 6 and collector 5.
2/ emitter region 1 of base area is obtained by way of vapor phase epitaxial growth.Base area 2 and the composition of emitter region 1 and schottky junction
Similar band structure and function: the no current access under reverse-biased or zero bias state, the only electron transit when applying forward bias
Potential barrier forms electric current, i.e. realization normally closed device.The vertical device structure that transistor of the invention uses unipolarity to transport, not only
Avoid the growth demand of bipolar device p-type GaN material.Also there are vertical devices to shorten transport time, high pressure resistant high power, drop
Low local pyrexia improves the advantages such as device stability.
The present invention is using the AlGaN of different Al components as emitter region 1 and collecting zone 3, and GaN material is as base area 2.Base
The GaN material and two sides AlGaN material in area 2 form two back-to-back schottky junctions, so that it is bis- to form AlGaN/GaN/AlGaN
Heterojunction structure.When 1/ base area of emitter region, 2 hetero-junctions is in forward bias, electronics gets over gesture by hot-electron emission model
It builds, when hetero-junctions is in reverse-biased, the electric current very little electronically formed, because electronics can only pass through tunneling effect and thermoelectricity Flied emission
Mechanism is collected across potential barrier.
In conjunction with Fig. 2, its working method of device of the present invention is: the hetero-junctions positively biased that 2/ emitter region 1 of base area is formed, electricity
Son crosses potential barrier by emitter 4 and reaches thin base area 2, does quasi- ballistic transport in base area 2 and reaches collecting zone 3,2/ collecting zone 3 of base area
The hetero-junctions of formation is reverse-biased, so that electronics forms collector current by the collection of collector 5.When 2/ emitter region 1 of base area formed it is different
When at matter knot without forward bias (reverse-biased or zero bias), the hetero-junctions that 2/ collecting zone 3 of base area is formed is not turned on, not the note of electronics
Enter, ideally, the two-pole characteristics of the hetero-junctions formed at this time there is only 2/ collecting zone 3 of base area, so that device is constantly in
Off state realizes normally closed device.
The transistor has variable efficiency of transmission α, and currentamplificationfactorβ (electricity when realizing basic enlarging function
Flow amplification coefficient, β=α/(1- α)) increase with the increase of emission effciency α.α with the increase of base stage/collector bias by
Gradually it is bordering on 1.Under three terminal normal bias, the variation range of β is about 10-40.
In addition the device has symmetrical structure.It is specifically that emitter region and collecting zone can be interchanged.Therefore the device can
To avoid transversal device local pyrexia, reliability, it is pressure-resistant the problems such as.And there are very big potentiality to high frequency applications.
AlGaN/GaN/AlGaN sandwich structure, base area GaN material and two sides are formed using AlGaN and GaN material
AlGaN material forms two back-to-back class schottky junction heterojunction structures.After increasing biasing, base area/emitter region potential barrier of heterogenous junction
Height is higher than base area/collecting zone potential barrier of heterogenous junction height, allows electronics to cross base area/emitter region potential barrier of heterogenous junction and reaches base
Area reaches base area/collecting zone hetero-junctions by base transit and is finally collected by collector.Emitter region, base area, current collection are distinguished
Do not connected by Ohmic contact with electrode.
Fig. 3 illustrates the embodiment of a specific double heterojunction transistor, and has been carried out based on the structure a series of
The analog simulation of transistors characteristics.
Fig. 4 shows the transistor base/emitter region hetero-junctions IV characteristic.Under two kinds of forward and reverse biasings,
Electric current differs the 4-5 order of magnitude, can be neglected when pull-down current is compared with forward current.It thereby may be ensured that brilliant when reverse-biased
Body pipe will not be opened, and realize device normally-off function.
Fig. 4 and Fig. 5 reflects the electrology characteristic of two hetero-junctions, it will thus be seen that base area/emitter region hetero-junctions is reversed partially
1 small compared with base area/collecting zone forward bias current, electric current several magnitudes are set, therefore in the case where amplifying operating mode, by emitter
Positive injected electrons is very much (for reversed 104-10 times 5), therefore the reversed leakage of base area/emitter region hetero-junctions can neglect substantially
Slightly disregard.Base area/collecting zone hetero-junctions is in reverse-biased, the farther electric current much smaller than emitter injection of reverse current at this time.
To guarantee that the working condition of device is good.
Fig. 6 illustrates the output characteristics of transistor, may determine that according to information in figure, when base area/emitter region hetero-junctions just
It is normally open, and base area/collecting zone hetero-junctions, there are when a reverse bias, device can have a determining operating current, real
Existing device enlarging function.
Under each working condition of device, conduction only is carried out using electron transport, i.e. the device is a unipolar device.
Since the mobility of electronics is far longer than hole, and the acquisition of N-type GaN material is easy more than P-type material, therefore the device has
A series of advantages of unipolar device.
For transistor of the invention when realizing basic enlarging function, having variable efficiency of transmission α, (α is with base area/collecting zone
The increase of the reverse bias of hetero-junctions and increase), and currentamplificationfactorβ (β=α/(1- α)) is with the increasing of emission effciency α
Increase greatly.As shown in Figure 7, the efficiency of transmission α of device is gradually increased close to saturation, levels off to 1.In three terminal normal bias
Under, the variation range of β is about 10-40.
On the whole, GaN base transistor of the present invention realizes two back-to-back class Schottky using hetero-junctions
Heterojunction structure is tied, i.e. the transistor is double heterojunction transistor.The turn-off function of device under negative bias or zero bias may be implemented simultaneously.
And with the advantage of corresponding unipolar device and vertical devices.
Claims (2)
1. a kind of device architecture of double heterojunction unipolar transistor, which is characterized in that the vertical devices transported using unipolarity
Structure, including emitter region, base area and the collecting zone arranged vertically, base area between emitter region and collecting zone, emitter region with
Collecting zone is interchangeable, and emitter region and collecting zone use AlGaN material, and base area uses GaN material, the GaN material and hair of base area
The AlGaN material for penetrating area and collecting zone forms two back-to-back schottky junctions, so that it is bis- heterogeneous to form AlGaN/GaN/AlGaN
Junction structure；Emitter, base stage and collector are connected with emitter region, base area and collecting zone respectively.
2. a kind of device architecture of double heterojunction unipolar transistor as described in claim 1, which is characterized in that the base area
And the emitter region is obtained by way of vapor phase epitaxial growth.
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| CN201910666385.8A CN110310989A (en) | 2019-07-23 | 2019-07-23 | A kind of device architecture of double heterojunction unipolar transistor |
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| CN201910666385.8A CN110310989A (en) | 2019-07-23 | 2019-07-23 | A kind of device architecture of double heterojunction unipolar transistor |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001060682A (en) * | 1999-08-19 | 2001-03-06 | Sharp Corp | Semiconductor device |
| CN102246283A (en) * | 2008-10-21 | 2011-11-16 | 日本电气株式会社 | Bipolar transistor |
| US20110309335A1 (en) * | 2008-12-22 | 2011-12-22 | Wolfgang Mehr | Unipolar heterojunction depletion-layer transistor |
| CN105355667A (en) * | 2015-10-26 | 2016-02-24 | 四川大学 | Resonant tunneling diode for generating negative differential resistance |
| CN105895670A (en) * | 2016-04-15 | 2016-08-24 | 四川大学 | Resonant tunneling diode provided with GaN quantum well |
| US10056476B1 (en) * | 2017-02-20 | 2018-08-21 | Murata Manufacturing Co., Ltd. | Heterojunction bipolar transistor |
-
2019
- 2019-07-23 CN CN201910666385.8A patent/CN110310989A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001060682A (en) * | 1999-08-19 | 2001-03-06 | Sharp Corp | Semiconductor device |
| CN102246283A (en) * | 2008-10-21 | 2011-11-16 | 日本电气株式会社 | Bipolar transistor |
| US20110309335A1 (en) * | 2008-12-22 | 2011-12-22 | Wolfgang Mehr | Unipolar heterojunction depletion-layer transistor |
| CN105355667A (en) * | 2015-10-26 | 2016-02-24 | 四川大学 | Resonant tunneling diode for generating negative differential resistance |
| CN105895670A (en) * | 2016-04-15 | 2016-08-24 | 四川大学 | Resonant tunneling diode provided with GaN quantum well |
| US10056476B1 (en) * | 2017-02-20 | 2018-08-21 | Murata Manufacturing Co., Ltd. | Heterojunction bipolar transistor |
Non-Patent Citations (2)
| Title |
|---|
| Z.C.YANG, ET.AL: "N-polar III-nitride tunneling hot electron transfer amplifier", 《72ND DEVICE RESEARCH CONFERENCE》 * |
| ZHICHAO YANG ET AL.: "Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors", 《IEEE ELECTRON DEVICE LETTERS》 * |
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Application publication date: 20191008 |