CN107331704A - A kind of grid voltage controls thyristor device - Google Patents
A kind of grid voltage controls thyristor device Download PDFInfo
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- CN107331704A CN107331704A CN201710706917.7A CN201710706917A CN107331704A CN 107331704 A CN107331704 A CN 107331704A CN 201710706917 A CN201710706917 A CN 201710706917A CN 107331704 A CN107331704 A CN 107331704A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000011982 device technology Methods 0.000 abstract description 2
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009194 climbing Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Thyristor device is controlled the invention provides a kind of grid voltage, belongs to power device technology field.The present invention includes metal anode, the first conductive type semiconductor doped substrate being cascading, the second conductive type semiconductor doped epitaxial layer and metallic cathode from bottom to top；Grid structure is provided with the middle part of the second conductive type semiconductor doped epitaxial layer top layer, grid structure both sides are provided with the first conductive type semiconductor doped well region, the first conductive type semiconductor doped well region lower face has the second conductive type semiconductor doped well region, and the second conductive type semiconductor doped well region lower face has the first conductive type semiconductor heavily doped region；Direction of the doping concentration of the first conductive type semiconductor doped well region from close to polygate electrodes to away from polygate electrodes is gradually reduced.The present invention improves the Surge handling capability that grid voltage controls IGCT.
Description
Technical field
The invention belongs to power device technology field, and in particular to a kind of grid voltage controls thyristor device.
Background technology
Electronic circuit is often met with by voltage transient forms the impact of surge current in use, and this will be right
The normal work of whole circuit has a negative impact the damage for even resulting in electronic circuit system.The source of surge current is main
Have：Inductive load voltage transient, static discharge, thunder discharge, the electric discharge in cloud layer or between cloud layer.In order to prevent the surge of transition
Impact of the voltage to whole circuit system, the surge protection of raising electronic system reliability, which becomes modern electronic devices, to be examined
The problem of worry.Thyristor-type surge protection circuit have accurate conducting, it is unlimited repeat, voltage range wide (several volts arrive several kilovolts) with
And the superior function of quick response (ns grades), thus it is widely used in electric and electronic technical field, the communications field and all kinds of electricity
The protection of sub-circuit.
Levels of current under surge protection circuit working method is final by the generating heat of thyristor chip, heat-resisting and heat dissipation characteristics
Determine, surge current (ITSM) generally do not repeated using on-state and critical rate of rise of on state current (di/dt) parameter directly reflects,
Above-mentioned parameter value also implies that more greatly IGCT is more applied to surge protection circuit.The cycle of module is minimized generally in 1ms
More than, therefore allow the levels of current to device in terms of current squaring time integral value to consider, imply that according to parameter
The IGCT that ITSM chooses perhaps has certain overload capacity；But only investigation ITSM is also far from enough, and di/dt is even more important, it
The pulse rate of climb that directly reflection IGCT is allowed, thereby it is ensured that di/dt parameters are more than the pulse that module parameter is determined
The electric current rate of climb is very necessary, otherwise can generating device when opening or because open the hot-spot in area and caused by permanent failure.
Grid voltage control IGCT is a kind of compound power device for combining MOSFET characteristics and thyristor characteristics, simultaneously
With input impedance high MOSFET, fast switching speed, the blocking voltage that gate pole is easy to control and IGCT is high, low lead
The advantages of logical power consumption, big driving current, it is widely used in power switch field.Controlled as shown in Figure 1 for conventional n-type grid voltage brilliant
Brake tube structure, controls thyristor application in surge protection circuit circuit, it is necessary to which there is device high on state current to face grid voltage
Boundary's climbing (di/dt).Grid voltage control IGCT is generally effectively improved using the doping concentration of p-well region is reduced in the prior art
High current climbing ability.The reduction of p-well region doping concentration can increase the emitter injection efficiency of NPN triode, so as to increase
The current amplification factor of big triode.But the operating voltage of grid voltage control IGCT is generally higher, therefore when it is turned on
Threshold voltage is larger, and the further reduction that can limit p-well region doping concentration is opened in order to avoid opening by mistake, and this method can not effective pin
The high critical rate of rise of on state current (di/dt) of thyristor device is controlled grid voltage to carry out the adjustment of concentration distribution.To sum up, need badly
One kind can lift high current rising characteristic, so solve when device is opened or because open the hot-spot in area and caused by permanent lose
The problem of effect
The content of the invention
In order to solve can not to be effectively directed to high critical rate of rise of on state current (di/ in existing grid voltage control thyristor device
Dt) carry out concentration distribution adjustment, the invention provides one kind by well region adulterate optimize and obtain high on state current it is critical on
The grid voltage control thyristor device of the rate of liter.
Technical scheme is specific as follows：
A kind of grid voltage controls IGCT, including metal anode (1), the first conduction type being cascading from bottom to top
Semiconductor doping substrate (2), the second conductive type semiconductor doped epitaxial layer (3) and metallic cathode (10)；Second conduction type
Semiconductor doping epitaxial layer (3) top layer two ends have the first conductive type semiconductor doped well region (7) respectively, and described first is conductive
Type semiconductor doped well region (7) lower face has the second conductive type semiconductor doped well region (8), second conductive-type
Type semiconductor doping well region (8) lower face has the first conductive type semiconductor heavily doped region (6)；Second conduction type is partly led
There is grid structure in the middle part of body doped epitaxial layer (3) top layer, the grid structure includes polygate electrodes (4), gate dielectric layer
And insulating medium layer (9) (5)；The polygate electrodes (4) and the first conductive type semiconductor doped well region of its both sides
(7), the of the second conductive type semiconductor doped well region (8) and the first conductive type semiconductor heavily doped region (6) and its bottom side
Across gate dielectric layer (5) between two conductive type semiconductor doped epitaxial layers (3)；The polygate electrodes (4) and its top side
Metallic cathode (10) between across insulating medium layer (9)；It is characterized in that：The first conductive type semiconductor doped well region
(7) direction of the doping concentration from close to polygate electrodes (4) to away from polygate electrodes (4) is gradually reduced.
It is further that the doping way of the first conductive type semiconductor doped well region (7) is gradient doping in the present invention.
It is further that there are some sub-regions in the present invention in the first conductive type semiconductor doped well region (7), if
The doping way of dry sub-regions is Uniform Doped.
It is further that the first conductive type semiconductor is P-type semiconductor in the present invention, the second conductive type semiconductor is
N-type semiconductor.
It is further that the first conductive type semiconductor is N-type semiconductor in the present invention, the second conductive type semiconductor is
P-type semiconductor.
It is further, the material of the first conductive type semiconductor or the second conduction band type semiconductor in the present invention
For body silicon, carborundum, GaAs, indium phosphide or germanium silicon composite.
The beneficial effects of the present invention are：By doping concentration in Reasonable adjustment and substrate conduction type identical well region,
So that the doping concentration in the well region close to polysilicon gate electrode region domain is higher to ensure certain threshold voltage, and away from many
The doping concentration in crystal silicon gate electrode region is gradually reduced, and reduces few sub- hole current of launch site with this so that IGCT is real
Now faster enter the purpose of latch mode, very high current-rising-rate is resulted in pulse discharge circuit, is quickly released
Surge current, and then avoid impact of the surge voltage of transition to device from realizing surge protection.The present invention improves grid voltage control
The Surge handling capability of IGCT.
Brief description of the drawings
Fig. 1 is the cross-sectional view that traditional grid voltage controls IGCT；
Fig. 2 is that a kind of grid voltage optimized of being adulterated based on well region that the embodiment of the present invention 1 is provided controls the section knot of IGCT
Structure schematic diagram；
Fig. 3 is the schematic equivalent circuit that N-type grid voltage provided in an embodiment of the present invention controls IGCT；
Fig. 4 is that a kind of grid voltage optimized of being adulterated based on well region that the embodiment of the present invention 2 is provided controls the section knot of IGCT
Structure schematic diagram；
In figure, 1 is metal anode, and 2 be the first conductive type semiconductor doped substrate, and 3 be the second conductive type semiconductor
Doped epitaxial layer, 4 be polygate electrodes, and 5 be gate dielectric layer, and 6 be the first conductive type semiconductor heavily doped region, and 7 be first
Conductive type semiconductor doped well region, 8 be the second conductive type semiconductor doped well region, and 9 be insulating medium layer, and 10 be that metal is cloudy
Pole.
Embodiment
The present invention is described more fully with reference to the accompanying drawings, identical label represents identical or phase in the accompanying drawings
As component or element.Idea of the invention is the grid voltage control thyristor device for improving a kind of high Surge handling capability, grid
Voltage-controlled combinations thyristor device can be p-type grid voltage control thyristor device or N-type grid voltage control thyristor device.
Embodiment 1：
As shown in Fig. 2 the present embodiment provides a kind of grid voltage control IGCT, including the gold being cascading from bottom to top
Belong to anode 1, the first conductive type semiconductor doped substrate 2, the second conductive type semiconductor doped epitaxial layer 3 and metallic cathode
10；Second 3 top layer two ends of conductive type semiconductor doped epitaxial layer have the first conductive type semiconductor doped well region 7 respectively,
The lower face of first conductive type semiconductor doped well region 7 has the second conductive type semiconductor doped well region 8, described the
The lower face of two conductive type semiconductor doped well region 8 has the first conductive type semiconductor heavily doped region 6；Second conduction type
There is grid structure, the grid structure includes polygate electrodes 4, gate dielectric layer 5 in the middle part of the top layer of semiconductor doping epitaxial layer 3
With insulating medium layer 9；The polygate electrodes 4 and the first conductive type semiconductor doped well region 7, second of its both sides are conductive
The conductive type semiconductor heavily doped region 6 of type semiconductor doped well region 8 and first and its second conductive type semiconductor of bottom side
Across gate dielectric layer 5 between doped epitaxial layer 3；Across exhausted between the polygate electrodes 4 and the metallic cathode of its top side 10
Edge dielectric layer 9；It is characterized in that：The first conductive type semiconductor doped well region 7 be gradient doping, its doping concentration from by
Nearly polygate electrodes 4 are gradually reduced to the direction away from polygate electrodes 4.
Idea of the invention is to provide a kind of grid voltage control thyristor device, based on above-mentioned technical proposal, leads when first
Electric type semiconductor is P-type semiconductor and the second conductive type semiconductor when being N-type semiconductor, and the device that the present invention is provided is N
Type grid voltage controls thyristor device；When the first conductive type semiconductor is N-type semiconductor and the second conductive type semiconductor is p-type
During semiconductor, the device that the present invention is provided controls thyristor device for p-type grid voltage.Lower mask body controls IGCT with N-type grid voltage
The principle and characteristic of the present invention are described in detail exemplified by device：
The schematic equivalent circuit that N-type of embodiment of the present invention grid voltage controls IGCT is illustrated in figure 3, with reference to Fig. 2 and originally
Field general knowledge is understood：PNPN tetra- shown in Fig. 2 layers of thyristor structure can regard a PNP transistor and a NPN connection as.Grid
Voltage-controlled combinations brake tube is really controlled being switched on and off for internal thyristor structure, the internal IGCT by MOSFET structure
Structure is made up of N-type well region 8, P type trap zone 7, N-type epitaxy layer 3 and P type substrate 2, wherein, P type trap zone 7 is used and mixed in the present invention
Miscellaneous concentration gradient, the doping concentration close to the region of polygate electrodes 4 is higher to ensure certain threshold voltage, and away from polycrystalline
The doping concentration in silicon gate electrode region is gradually reduced, and reduces few sub- hole current of launch site successively so that the transmitting of NPN pipes
Pole injection efficiency increase, so as to increase the current amplification factor α of NPN transistorNPN, also, due to the base width of PNP pipe,
The width of namely N-type epitaxy layer 3 is very wide, the amplification coefficient very little of itself, therefore the doping concentration of P type trap zone 7 reduces meeting
The emitter injection efficiency of PNP pipe is influenceed, but to the current amplification factor α of PNP pipePNPInfluence very little.Therefore, the present invention is adopted
Make latching condition α with the P type trap zone 7 of doping concentration gradual changeNPN+αPNP>=1 faster reaches so that in grid voltage control thyristor device
The thyristor structure in portion more easily reachs latching condition.When applying in surge protection circuit, when there is larger surge voltage,
Grid voltage control IGCT provided by the present invention can quickly enter latch mode, bear very high electric current, obtain high on-state electricity
Critical climbing di/dt is flowed, so as to improve the Surge handling capability that grid voltage controls IGCT.
Embodiment 2：
As shown in figure 4, the present invention is except the first conductive type semiconductor well region 7 is by the sub-district of several different levels of doping
Domain is constituted, and each region is met：As the distance away from polygate electrodes 4 gradually increases, the doping of each sub-regions is dense
Degree is gradually reduced.
Embodiments of the invention are set forth above in association with accompanying drawing, but the invention is not limited in above-mentioned specific
Embodiment, above-mentioned embodiment is only schematical, rather than restricted, and one of ordinary skill in the art exists
Under the enlightenment of the present invention, in the case of present inventive concept and scope of the claimed protection is not departed from, many shapes can be also made
Formula, these are belonged within the protection of the present invention.
Claims (6)
1. a kind of grid voltage controls IGCT, including metal anode (1), the first conduction type half being cascading from bottom to top
Conductor doped substrate (2), the second conductive type semiconductor doped epitaxial layer (3) and metallic cathode (10)；Second conduction type half
Conductor doped epitaxial layer (3) top layer two ends have the first conductive type semiconductor doped well region (7), first conductive-type respectively
Type semiconductor doping well region (7) lower face has the second conductive type semiconductor doped well region (8), second conduction type
Semiconductor doping well region (8) lower face has the first conductive type semiconductor heavily doped region (6)；Second conductive type semiconductor
There is grid structure in the middle part of doped epitaxial layer (3) top layer, the grid structure includes polygate electrodes (4), gate dielectric layer (5)
With insulating medium layer (9)；First conductive type semiconductor doped well region (7) of the polygate electrodes (4) and its both sides, the
Two conductive type semiconductor doped well regions (8) and the first conductive type semiconductor heavily doped region (6) and its second conduction of bottom side
Across gate dielectric layer (5) between type semiconductor doped epitaxial layer (3)；The polygate electrodes (4) and the metal of its top side
Across insulating medium layer (9) between negative electrode (10)；It is characterized in that：The first conductive type semiconductor doped well region (7)
Direction of the doping concentration from close to polygate electrodes (4) to away from polygate electrodes (4) is gradually reduced.
2. a kind of grid voltage control IGCT according to claim 1, it is characterised in that the first conductive type semiconductor adulterates
The doping way of well region (7) is gradient doping.
3. a kind of grid voltage control IGCT according to claim 1, it is characterised in that the first conductive type semiconductor adulterates
There are some sub-regions, the doping way of some sub-regions is Uniform Doped in well region (7).
4. a kind of grid voltage control IGCT according to Claims 2 or 3, it is characterised in that the first conductive type semiconductor
For P-type semiconductor, the second conductive type semiconductor is N-type semiconductor.
5. a kind of grid voltage control IGCT according to Claims 2 or 3, it is characterised in that the first conductive type semiconductor
For N-type semiconductor, the second conductive type semiconductor is P-type semiconductor.
6. a kind of grid voltage control IGCT according to claim 1, it is characterised in that the first conductive type semiconductor or
The material of the second conduction band type semiconductor is body silicon, carborundum, GaAs, indium phosphide or germanium silicon composite.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710706917.7A CN107331704B (en) | 2017-08-17 | 2017-08-17 | A kind of grid voltage control thyristor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710706917.7A CN107331704B (en) | 2017-08-17 | 2017-08-17 | A kind of grid voltage control thyristor device |
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| Publication Number | Publication Date |
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| CN107331704A true CN107331704A (en) | 2017-11-07 |
| CN107331704B CN107331704B (en) | 2019-08-23 |
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| CN201710706917.7A Active CN107331704B (en) | 2017-08-17 | 2017-08-17 | A kind of grid voltage control thyristor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627905A (en) * | 2020-06-04 | 2020-09-04 | 电子科技大学 | Programmable one-way protection device triggered by LDMOS (laterally diffused metal oxide semiconductor) |
| CN111668211A (en) * | 2020-07-13 | 2020-09-15 | 北京时代华诺科技有限公司 | Semiconductor structure, surge protection device and manufacturing method |
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|---|---|---|---|---|
| EP0310836A2 (en) * | 1987-10-08 | 1989-04-12 | Siemens Aktiengesellschaft | Semiconductor element with a planar p-n junction |
| JPH02172283A (en) * | 1988-12-23 | 1990-07-03 | Matsushita Electric Works Ltd | Electrostatic induction semiconductor device |
| US20100044825A1 (en) * | 2008-08-19 | 2010-02-25 | Infineon Technologies Austria Ag | Semiconductor device and method for the production of a semiconductor device |
| CN102263127A (en) * | 2010-05-29 | 2011-11-30 | 比亚迪股份有限公司 | MOS (Metal Oxide Semiconductor) type power device and manufacturing method thereof |
| CN103872099A (en) * | 2012-12-13 | 2014-06-18 | 英飞凌科技股份有限公司 | Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device |
-
2017
- 2017-08-17 CN CN201710706917.7A patent/CN107331704B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0310836A2 (en) * | 1987-10-08 | 1989-04-12 | Siemens Aktiengesellschaft | Semiconductor element with a planar p-n junction |
| JPH02172283A (en) * | 1988-12-23 | 1990-07-03 | Matsushita Electric Works Ltd | Electrostatic induction semiconductor device |
| US20100044825A1 (en) * | 2008-08-19 | 2010-02-25 | Infineon Technologies Austria Ag | Semiconductor device and method for the production of a semiconductor device |
| CN102263127A (en) * | 2010-05-29 | 2011-11-30 | 比亚迪股份有限公司 | MOS (Metal Oxide Semiconductor) type power device and manufacturing method thereof |
| CN103872099A (en) * | 2012-12-13 | 2014-06-18 | 英飞凌科技股份有限公司 | Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627905A (en) * | 2020-06-04 | 2020-09-04 | 电子科技大学 | Programmable one-way protection device triggered by LDMOS (laterally diffused metal oxide semiconductor) |
| CN111627905B (en) * | 2020-06-04 | 2022-06-07 | 电子科技大学 | Programmable one-way protection device triggered by LDMOS (laterally diffused metal oxide semiconductor) |
| CN111668211A (en) * | 2020-07-13 | 2020-09-15 | 北京时代华诺科技有限公司 | Semiconductor structure, surge protection device and manufacturing method |
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| CN107331704B (en) | 2019-08-23 |
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