CN211930611U - Silicon controlled rectifier drive circuit and silicon controlled rectifier chip - Google Patents

Abstract

The utility model belongs to the technical field of semiconductor device, a among silicon controlled rectifier drive circuit and the silicon controlled rectifier chip is provided, control electrode silicon controlled rectifier drive circuit's through the silicon controlled rectifier device control end, the first electrode of silicon controlled rectifier device is as silicon controlled rectifier drive circuit's output, the second electrode of silicon controlled rectifier device connects the power input end as silicon controlled rectifier drive circuit with zener diode's negative pole altogether, zener diode's positive pole connects the compensation signal end as silicon controlled rectifier drive circuit with diode's negative pole altogether, the positive pole of diode is as silicon controlled rectifier drive circuit's earthing terminal, thereby provide a silicon controlled rectifier drive circuit from taking direct current function, solve current silicon controlled rectifier device function singleness's problem.

Description

Silicon controlled rectifier drive circuit and silicon controlled rectifier chip

Technical Field

The utility model relates to a semiconductor device technical field especially relates to a silicon controlled rectifier drive circuit and silicon controlled rectifier chip.

Background

A Silicon Controlled Rectifier (SCR) is a high-power electrical component, also called a thyristor, and has the advantages of small volume, high efficiency, long service life, and the like. The prior silicon controlled rectifier mainly has a full plane, a single boss, a double boss and the like, and the optimization direction mainly lies in reducing high-temperature electric leakage, improving voltage change rate, adjusting dynamic current during turn-off and the like.

However, the existing thyristor device still belongs to a single thyristor as a whole, and an equivalent circuit of the thyristor device can be formed by 8 transistors, so that the thyristor device has the problem of single function.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a silicon controlled rectifier drive circuit and silicon controlled rectifier chip aims at solving current silicon controlled rectifier device function singleness's problem.

The utility model provides a pair of silicon controlled rectifier drive circuit, include: a thyristor device, a zener diode, and a diode; the control electrode of the silicon controlled rectifier device is connected with the control end of the silicon controlled rectifier driving circuit, the first electrode of the silicon controlled rectifier device is used as the output end of the silicon controlled rectifier driving circuit, the second electrode of the silicon controlled rectifier device and the cathode of the Zener diode are connected together to be used as the power input end of the silicon controlled rectifier driving circuit, the anode of the Zener diode and the cathode of the diode are connected together to be used as the compensation signal end of the silicon controlled rectifier driving circuit, and the anode of the diode is used as the grounding end of the silicon controlled rectifier driving circuit.

Optionally, the silicon controlled drive circuit further includes a signal compensation circuit, and the signal compensation circuit is disposed between the compensation signal end and the anode of the zener diode.

Optionally, the signal compensation circuit includes a first resistor and a first capacitor; the first end of the first capacitor is connected with the anode of the Zener diode, the second end of the first capacitor is connected with the first end of the first resistor, and the second end of the first resistor is connected with the compensation signal end.

Optionally, the silicon controlled rectifier device is a bidirectional silicon controlled rectifier.

Optionally, the silicon controlled device has any one of a full-plane structure, a single-boss structure and a double-boss structure.

Optionally, the zener diode includes a substrate, a well region is formed in the substrate, a first doping region and a second doping region with different doping types are formed in the well region, the first doping region and the second doping region are exposed to the surface of the substrate, the first doping region and the second doping region are arranged laterally and are connected, and the connected region of the first doping region and the second doping region constitutes a pn junction of the zener diode.

Optionally, the first doped region includes a first doped body region and a first doped diffusion region laterally connected to the first doped body region, and the second doped region includes a second doped body region and a second doped diffusion region laterally connected to the second doped body region; wherein the first and second doped diffusion regions laterally meet, and the meeting region of the first and second doped diffusion regions constitutes a pn junction of the zener diode.

Optionally, the zener diode is a temperature compensation zener diode.

The embodiment of the application also provides a silicon controlled rectifier chip, which comprises a packaging body and the silicon controlled rectifier driving circuit, wherein the silicon controlled rectifier driving circuit is packaged in the packaging body.

Optionally, the silicon controlled rectifier chip includes a main electrode pin, a sub-electrode pin, a control pin, a virtual ground pin, and a signal compensation pin; the main electrode pin is connected with the output end of the silicon controlled drive circuit, the secondary electrode pin is connected with the power input end of the silicon controlled drive circuit, the control pin is connected with the control end of the silicon controlled drive circuit, the virtual grounding pin is connected with the grounding end of the silicon controlled drive circuit, and the signal compensation pin is connected with the compensation signal end of the silicon controlled drive circuit.

The utility model provides an among silicon controlled rectifier drive circuit and silicon controlled rectifier chip, the control end through the control electrode silicon controlled rectifier drive circuit of silicon controlled rectifier device, the first electrode of silicon controlled rectifier device is as silicon controlled rectifier drive circuit's output, the second electrode of silicon controlled rectifier device connects the power input end as silicon controlled rectifier drive circuit with zener diode's negative pole altogether, zener diode's positive pole connects the compensation signal end as silicon controlled rectifier drive circuit with diode's negative pole altogether, the positive pole of diode is as silicon controlled rectifier drive circuit's earthing terminal, thereby provide a silicon controlled rectifier drive circuit from taking direct current function, solve current silicon controlled rectifier device function singleness's problem.

Drawings

Fig. 1 is a schematic circuit structure diagram of a thyristor driving circuit according to an embodiment of the present application;

fig. 2 is a schematic circuit diagram of a thyristor driving circuit according to another embodiment of the present application;

fig. 3 is a schematic circuit diagram of a thyristor driving circuit according to another embodiment of the present application;

fig. 4, 5, and 6 are three structures of the thyristor device provided in the embodiment of the present application, respectively;

fig. 7 and 8 are schematic structural diagrams of zener diodes provided in the embodiments of the present application;

fig. 9 is a schematic structural diagram of a thyristor chip according to an embodiment of the present application.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the description of the present invention, it is to be understood that the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.

Referring to fig. 1, the thyristor driving circuit in the present embodiment includes: thyristor T, zener diode Z and diode D, thyristor T's control pole thyristor drive circuit 80's control end G, thyristor T's first electrode is as thyristor drive circuit 80's output A, thyristor T's second electrode with zener diode Z's negative pole connects as thyristor drive circuit 80's power input K altogether, zener diode Z's positive pole with diode D's negative pole connects as thyristor drive circuit 80's compensation signal end Comp altogether, diode D's positive pole is as thyristor drive circuit 80's earthing terminal GND.

In this embodiment, the power input terminal K of the scr driving circuit 80 is configured to receive a power signal, the compensation signal terminal Comp is configured to receive a compensation signal, and the control terminal G is configured to receive a control signal, specifically, when the scr driving circuit 80 works, a control signal is input to the control terminal G to control the turn-on or turn-off of the scr device T, for example, when the scr device T is a triac, the triac device T can be triggered to turn on no matter whether a forward voltage or a reverse voltage is applied to the control terminal G, or whether a trigger signal input to the control terminal G is forward or reverse.

In one embodiment, the first terminal of the thyristor T serves as the main electrode T2, the second terminal of the thyristor T serves as the sub-electrode, and the thyristor has the following four triggering modes:

when the voltage applied to the sub-electrode Tl by the main electrode T2 is a forward voltage, the control terminal G applies a forward trigger signal to the sub-electrode Tl. After the triac is triggered to conduct, the current flows from T2 to T1.

(2) If the main electrode T2 still applies a forward voltage and changes the trigger signal to a reverse signal, the on-state current still flows from the main electrode T2 to the sub-electrode T1 after the triac is triggered to conduct.

(3) A reverse voltage U12 is applied between the main electrode T2 and the sub electrode T1, a forward trigger signal is input, and after the bidirectional triode thyristor is conducted, current flows from T1 to T2.

(4) The reverse voltage U12 is still applied between the main electrode T2 and the sub electrode T1, a reverse trigger signal is input, and after the bidirectional triode thyristor is conducted, the on-state current still flows from T1 to T2.

Since the thyristor device T includes a plurality of PN junctions, for example, a NPN-type transistor (BG1) and a PNP-type transistor (BG2) can be viewed from the cathode (i.e., the second electrode) to the anode (i.e., the first electrode) of the thyristor device T, and the two transistors overlap with each other, in a specific application, by applying a small current or voltage to the control electrode of the thyristor device T, a large anode current or anode voltage can be output at the anode (i.e., the first electrode), for example, a forward voltage Ea is applied between the anode and the cathode (i.e., the second electrode) of the thyristor device T, and a forward trigger signal is input between the control electrode and the cathode of the thyristor device T, BG1 generates a base current Ib, which is amplified by BG1 to generate a collector current IC1 amplified by β 1, and since the collector of BG1 is connected to the base of BG2, the collector current IC1 is amplified by β 2 times to generate a collector current IC2 and then output to the base of BG1, and the feedback is continuously circulated, so that the conduction state of the silicon controlled device T can be kept even if the trigger signal disappears, and the silicon controlled device T can be turned off only by turning off the power supply Ea or reducing the Ea to enable collector currents in BG1 and BG2 to be smaller than the minimum value for maintaining conduction, wherein the amplification factors beta 1 and beta 2 depend on the performance parameters of the silicon controlled device T.

In one embodiment, referring to fig. 2, the thyristor driving circuit 80 further includes a signal compensation circuit 81, and the signal compensation circuit 81 is disposed between the compensation signal terminal Comp and the anode of the zener diode Z.

In the present embodiment, the signal compensation circuit 81 may be one of a resistor, a capacitor and a combination circuit thereof.

In one embodiment, referring to fig. 3, the signal compensation circuit 81 includes a first resistor R1 and a first capacitor C1; a first terminal of the first capacitor C1 is connected to the anode of the zener diode Z, a second terminal of the first capacitor C1 is connected to a first terminal of the first resistor R1, and a second terminal of the first resistor R1 is connected to the compensation signal terminal Comp.

In one embodiment, the thyristor device T is a triac.

In one embodiment, referring to fig. 4, 5 and 6, the thyristor device T has a structure of any one of a full-plane structure, a single-mesa structure and a double-mesa structure.

Fig. 4 is a schematic view of a thyristor having a double-mesa structure, fig. 5 is a schematic view of a thyristor having a single-mesa structure, and fig. 6 is a schematic view of a full-plane thyristor, in which P denotes a P-type element-doped semiconductor, N denotes an N-type element-doped semiconductor, Anode denotes an Anode electrode, Cathode denotes a Cathode electrode, Gate denotes a Gate electrode, oxide denotes an oxide layer, Passivation denotes an insulating layer, metalizing denotes a metal layer, and Glass denotes Glass filling.

Generally, the breakdown voltage of the silicon controlled rectifier is determined by the doping concentration of a substrate layer, silicon substrates with different doping concentrations are adopted as the substrate layer according to different breakdown voltages, and the higher the doping concentration of the silicon substrate is, the lower the breakdown voltage of the prepared silicon controlled rectifier is.

Fig. 7 is a schematic structural diagram of a zener diode according to an embodiment of the present invention, referring to fig. 7, the zener diode Z in this embodiment includes a substrate 201, a well region 202 is formed in the substrate 201, a first doped region 21 and a second doped region 22 with different doping types are formed in the well region 202, the first doped region 21 and the second doped region 22 are exposed on the surface of the substrate 201, the first doped region 21 and the second doped region 22 are arranged laterally and the first doped region 21 and the second doped region 22 are connected, and a connected region of the first doped region 21 and the second doped region 22 constitutes a pn junction of the zener diode.

Specifically, in the present embodiment, the doping types of the first doping region 21 and the second doping region 22 are different, so that a lateral pn junction is formed at the boundary between the first doping region 21 and the second doping region 22 due to the contact between the two doping types. The doping type of the first doping region 21 used in this embodiment is, for example, p-type, and the doping type of the second doping region 22 is, for example, n-type. Correspondingly, a positive electrode can be connected to the p-type first doped region 21, and a negative electrode can be connected to the n-type second doped region 22. It should be noted that the doping types of the first doped region 21 and the second doped region 22 may also be n-type and p-type, respectively, and then the electrode connected to the corresponding n-type first doped region 21 is a negative electrode, and the p-type second doped region 22 is a positive electrode.

In addition, since the breakdown voltage of the zener diode in this embodiment depends on the lateral pn junction of the junction region of the first doped region 21 and the second doped region 22, and the conduction path of the lateral pn junction does not need to pass through the well region 202, there is no special requirement on the doping type of the well region 202, and further, the well region 202 can be selected to be n-type or p-type.

It should be noted that, since the zener diode in this embodiment forms the lateral pn junction, there is no structure of the p region and the n region in the longitudinal pn junction in the longitudinal stack, and further, in the preparation process, an additional mask is not needed to form the longitudinal stacked pn junction, and the specific reason will be explained in detail in the preparation method and will not be described herein. Therefore, the utility model discloses zener diode with horizontal pn junction can save mask cost and preparation cost.

Preferably, the first doped region 21 includes a first doped body region 210 and a first doped diffusion region 211 laterally connected to the first doped body region 210, and the second doped region 22 includes a second doped body region 220 and a second doped diffusion region 221 laterally connected to the second doped body region 220;

wherein the first impurity diffusion region 211 and the second impurity diffusion region 221 laterally meet, and the meeting region of the first impurity diffusion region 211 and the second impurity diffusion region 221 constitutes a pn junction of the zener diode.

In one embodiment, the first impurity diffusion region 211 is formed by diffusion of impurity ions in the first impurity body region 210, and the second impurity diffusion region 221 is formed by diffusion of impurity ions in the second impurity body region 220.

Specifically, in the present embodiment, the first doped region 21 and the second doped region 22 are not directly formed in one process step, but a first doped body region 210 and a second doped body region 220 are formed in the substrate 201, and then a diffusion process is used to form a first doped diffusion region 211 by diffusion of the first doped body region 210 and a second doped diffusion region 221 by diffusion of the second doped body region 220. Therefore, the first doping diffusion region 211 and the second doping diffusion region 221 can be regarded as extensions of the first doping body region 210 and the second doping body region 220, respectively, so that by controlling the process conditions for forming the first doping diffusion region 211 and the second doping diffusion region 221, the depletion region and the concentration distribution condition of the pn junction can be controlled, thereby adjusting the breakdown voltage of the zener diode.

In one embodiment, the reverse breakdown voltage of the zener diode increases as the sum of the lateral lengths of the first and second doped diffusion regions 211 and 221 increases; wherein the sum of the lateral lengths is the sum of the lengths of the first impurity diffusion region 211 and the second impurity diffusion region 221 in the lateral diffusion direction.

The first one is Zener breakdown, when the doping concentration of a pn junction is higher, the width of a depletion region of the pn junction is correspondingly smaller, and the built-in electric field intensity is higher, so that a larger electric field can be obtained only by applying smaller reverse voltage, and the covalent bond of neutral atoms in the depletion region is damaged, thereby converting valence electrons into free electrons, exciting a large number of carriers and forming Zener breakdown; the second is avalanche breakdown, when the doping concentration of the pn junction is low, a large reverse voltage is applied to the pn junction, so that a current carrier obtains large kinetic energy, the high-energy current carrier collides with neutral atoms to break a covalent bond and release the current carrier, the newly generated current carrier can be repeated, the avalanche type increase of the current carrier is formed, the reverse current is increased rapidly, and the avalanche breakdown is caused. It can be seen that the different widths of the pn junction depletion regions formed result in different situations of breakdown. Zener diodes are not only known as zener diodes, but also refer to zener diodes based on the principle of zener breakdown, however, in general, more zener diodes are used in integrated circuits to obtain a relatively small breakdown voltage.

In this embodiment, the breakdown mode of the zener diode is, for example, zener breakdown. The diffusion process is adopted to diffuse the doping ions in the first doped body region 210 and the second doped body region 220 to form a first doping diffusion region 211 and a second doping diffusion region 221, and the concentration distribution of the doping ions in the first doping diffusion region 211 and the second doping diffusion region 221 is limited by the lateral diffusion length thereof, that is, the sum of the lengths of the first doping diffusion region 211 and the second doping diffusion region 221 in the lateral diffusion direction. In this embodiment, the sum of the lengths of the first impurity diffusion region 211 and the second impurity diffusion region 221 in the lateral diffusion direction is actually the distance laterally spaced between the first impurity-doped body region 210 and the second impurity-doped body region 220. The reason for this is that, under the condition that the total concentration of the dopant ions is not changed, the longer the diffusion distance of the dopant ions is, the lower the concentration of the diffused ions is, and further, the too long diffusion region lowers the concentration of the dopant ions on both sides of the pn junction formed after diffusion, and also increases the width of the depletion region of the pn junction. It is clear that as the depletion region increases, the built-in electric field strength within the depletion region decreases accordingly, resulting in a corresponding increase in the applied voltage required to achieve zener breakdown. It can be seen that the reverse breakdown voltage of the zener diode in this embodiment increases as the sum of the lateral lengths of the first and second doped diffusion regions 211 and 221 increases. And, in order to prevent the zener diode from generating zener breakdown due to the excessive sum of the lateral lengths, in this embodiment, the sum of the lateral lengths of the first doped diffusion region 211 and the second doped diffusion region 221 is less than or equal to 0.4 μm, so as to ensure that the zener diode can work normally in this embodiment.

In one embodiment, the second doped region 22 is an annular region and laterally surrounds the first doped region 21.

Specifically, fig. 7 only schematically shows a cross-sectional structure of the zener diode in the present embodiment, in order to more clearly and fully illustrate the zener diode structure in the present embodiment, fig. 8 is further provided in the present embodiment, fig. 8 is a schematic top view of the zener diode structure in the first embodiment of the present invention, and fig. 8 schematically shows that the second doped region 22 is an annular region and surrounds the first doped region 21. At this time, since the connection region between the first doped region 21 and the second doped region 22 is also an annular region, the first doped diffusion region 211 and the second doped diffusion region 221 are also annular regions, the second doped region 22 surrounds the second doped diffusion region 221, the second doped diffusion region 221 surrounds the first doped diffusion region 211, and the first doped diffusion region 211 surrounds the first doped region 21. The junction area between the first doped region 21 and the second doped region 22 is increased, so that the pn junction cross-sectional area of the zener diode is effectively increased.

In one embodiment, the zener diode is a temperature compensated zener diode.

The embodiment of the present application further provides a thyristor chip, and as shown in fig. 9, the thyristor chip in the embodiment includes a package 82 and a thyristor driving circuit as described in any one of the above, where the thyristor driving circuit is packaged in the package 82.

In one embodiment, the silicon controlled rectifier chip can be divided into three types of metal-packaged silicon controlled rectifiers, plastic-packaged silicon controlled rectifiers and ceramic-packaged silicon controlled rectifiers according to the packaging form of the silicon controlled rectifier chip. The metal-encapsulated silicon controlled rectifier is divided into a bolt shape, a flat plate shape, a round shell shape and the like; the plastic sealed silicon controlled rectifier is divided into a type with a radiating fin and a type without the radiating fin.

In one embodiment, the scr chip includes a main electrode pin a, a sub-electrode pin K, a control pin G, a virtual ground pin GND, and a signal compensation pin Comp; the main electrode pin A is connected with the output end A of the silicon controlled drive circuit, the secondary electrode pin K is connected with the power input end K of the silicon controlled drive circuit, the control pin G is connected with the control end G of the silicon controlled drive circuit, the virtual grounding pin GND is connected with the grounding end GND of the silicon controlled drive circuit, and the signal compensation pin Comp is connected with the compensation signal end Comp of the silicon controlled drive circuit.

In one embodiment, the silicon controlled rectifier chip is packaged by any one of a TO-220 packaging structure, a TO-3P packaging structure and a TO-263 packaging structure.

The utility model provides an among silicon controlled rectifier drive circuit and silicon controlled rectifier chip, the control end through the control electrode silicon controlled rectifier drive circuit of silicon controlled rectifier device, the first electrode of silicon controlled rectifier device is as silicon controlled rectifier drive circuit's output, the second electrode of silicon controlled rectifier device connects the power input end as silicon controlled rectifier drive circuit with zener diode's negative pole altogether, zener diode's positive pole connects the compensation signal end as silicon controlled rectifier drive circuit with diode's negative pole altogether, the positive pole of diode is as silicon controlled rectifier drive circuit's earthing terminal, thereby provide a silicon controlled rectifier drive circuit from taking direct current function, solve current silicon controlled rectifier device function singleness's problem.

The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. A thyristor driver circuit, comprising: a thyristor device, a zener diode, and a diode;

the control electrode of the silicon controlled rectifier device is connected with the control end of the silicon controlled rectifier driving circuit, the first electrode of the silicon controlled rectifier device is used as the output end of the silicon controlled rectifier driving circuit, the second electrode of the silicon controlled rectifier device is connected with the cathode of the Zener diode in a common mode and is used as the power input end of the silicon controlled rectifier driving circuit, the anode of the Zener diode is connected with the cathode of the diode in a common mode and is used as the compensation signal end of the silicon controlled rectifier driving circuit, and the anode of the diode is used as the grounding end of the silicon controlled rectifier driving circuit.

2. The silicon controlled rectifier drive circuit as claimed in claim 1, further comprising a signal compensation circuit within said silicon controlled rectifier drive circuit, said signal compensation circuit being disposed between said compensation signal terminal and an anode of said zener diode.

3. The thyristor driver circuit of claim 2, wherein the signal compensation circuit comprises a first resistor and a first capacitor; the first end of the first capacitor is connected with the anode of the Zener diode, the second end of the first capacitor is connected with the first end of the first resistor, and the second end of the first resistor is connected with the compensation signal end.

4. The silicon controlled drive circuit according to claim 1, wherein the silicon controlled device is a triac.

5. The silicon controlled rectifier drive circuit as claimed in claim 1, wherein the structure of the silicon controlled rectifier device is any one of a full plane structure, a single boss structure and a double boss structure.

6. The silicon controlled rectifier drive circuit as claimed in claim 1, wherein said zener diode includes a substrate, a well region formed in said substrate, a first doped region and a second doped region formed in said well region and having different doping types, said well region, said first doped region and said second doped region being exposed to a surface of said substrate, said first doped region and said second doped region being laterally arranged and said first doped region and said second doped region being contiguous, a contiguous region of said first doped region and said second doped region constituting a pn junction of said zener diode.

7. The silicon controlled rectifier drive circuit of claim 6, wherein the first doped region includes a first doped body region and a first doped diffusion region laterally bordering the first doped body region, and the second doped region includes a second doped body region and a second doped diffusion region laterally bordering the second doped body region; wherein the first and second doped diffusion regions laterally meet, and the meeting region of the first and second doped diffusion regions constitutes a pn junction of the zener diode.

8. The silicon controlled rectifier drive circuit as claimed in claim 1, wherein said zener diode is a temperature compensated zener diode.

9. A silicon controlled rectifier chip, comprising a package and a silicon controlled rectifier driving circuit according to any one of claims 1 to 8, wherein the silicon controlled rectifier driving circuit is packaged in the package.

10. The silicon controlled rectifier chip of claim 9, wherein the silicon controlled rectifier chip includes a main electrode pin, a sub-electrode pin, a control pin, a virtual ground pin, and a signal compensation pin; the main electrode pin is connected with the output end of the silicon controlled drive circuit, the secondary electrode pin is connected with the power input end of the silicon controlled drive circuit, the control pin is connected with the control end of the silicon controlled drive circuit, the virtual grounding pin is connected with the grounding end of the silicon controlled drive circuit, and the signal compensation pin is connected with the compensation signal end of the silicon controlled drive circuit.

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