DE602004021460D1 - Lichtemittierende Halbleitervorrichtung - Google Patents

Lichtemittierende Halbleitervorrichtung

Info

Publication number
DE602004021460D1
DE602004021460D1 DE602004021460T DE602004021460T DE602004021460D1 DE 602004021460 D1 DE602004021460 D1 DE 602004021460D1 DE 602004021460 T DE602004021460 T DE 602004021460T DE 602004021460 T DE602004021460 T DE 602004021460T DE 602004021460 D1 DE602004021460 D1 DE 602004021460D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
emitting semiconductor
emitting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004021460T
Other languages
English (en)
Inventor
Joon-Seop Kwak
Jae-Hee Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of DE602004021460D1 publication Critical patent/DE602004021460D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE602004021460T 2003-09-19 2004-09-15 Lichtemittierende Halbleitervorrichtung Active DE602004021460D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030065219A KR100576849B1 (ko) 2003-09-19 2003-09-19 발광소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
DE602004021460D1 true DE602004021460D1 (de) 2009-07-23

Family

ID=34192251

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004021460T Active DE602004021460D1 (de) 2003-09-19 2004-09-15 Lichtemittierende Halbleitervorrichtung

Country Status (6)

Country Link
US (4) US7115909B2 (de)
EP (1) EP1517381B1 (de)
JP (1) JP4535815B2 (de)
KR (1) KR100576849B1 (de)
CN (1) CN100505338C (de)
DE (1) DE602004021460D1 (de)

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KR100576849B1 (ko) 2003-09-19 2006-05-10 삼성전기주식회사 발광소자 및 그 제조방법
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TWI394290B (zh) * 2006-12-18 2013-04-21 Delta Electronics Inc 電激發光裝置及其製造方法
JP2009049267A (ja) * 2007-08-22 2009-03-05 Toshiba Corp 半導体発光素子及びその製造方法
JP2010103500A (ja) * 2008-09-26 2010-05-06 Toppan Printing Co Ltd 有機電界発光素子及びその製造方法、画像表示装置、照明装置
KR101248624B1 (ko) 2011-08-01 2013-03-28 주식회사 케이이씨 발광 반도체 디바이스 및 그 제조 방법
KR101332686B1 (ko) 2012-07-11 2013-11-25 고려대학교 산학협력단 투명 전극을 구비하는 발광소자 및 그 제조 방법
JP6024502B2 (ja) * 2013-02-13 2016-11-16 三菱マテリアル株式会社 ＬａＮｉＯ３薄膜形成用組成物及びこの組成物を用いたＬａＮｉＯ３薄膜の形成方法
JP6627728B2 (ja) * 2016-11-24 2020-01-08 豊田合成株式会社 発光素子の製造方法
JP6841708B2 (ja) * 2017-03-31 2021-03-10 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光素子および発光素子の製造方法

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Also Published As

Publication number Publication date
KR20050028706A (ko) 2005-03-23
CN100505338C (zh) 2009-06-24
US8435813B2 (en) 2013-05-07
US20120190142A1 (en) 2012-07-26
KR100576849B1 (ko) 2006-05-10
US20100285622A1 (en) 2010-11-11
EP1517381B1 (de) 2009-06-10
EP1517381A3 (de) 2007-02-28
EP1517381A2 (de) 2005-03-23
CN1599088A (zh) 2005-03-23
US7790486B2 (en) 2010-09-07
US7115909B2 (en) 2006-10-03
US20050062051A1 (en) 2005-03-24
JP4535815B2 (ja) 2010-09-01
US20060281209A1 (en) 2006-12-14
JP2005094020A (ja) 2005-04-07

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8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG LED CO.,LTD., SUWON, KYONGGI, KR

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