DE602005019839D1 - Herstellungsmethoden für Dünnschichttransistor und Flachbildschirm - Google Patents

Herstellungsmethoden für Dünnschichttransistor und Flachbildschirm

Info

Publication number
DE602005019839D1
DE602005019839D1 DE602005019839T DE602005019839T DE602005019839D1 DE 602005019839 D1 DE602005019839 D1 DE 602005019839D1 DE 602005019839 T DE602005019839 T DE 602005019839T DE 602005019839 T DE602005019839 T DE 602005019839T DE 602005019839 D1 DE602005019839 D1 DE 602005019839D1
Authority
DE
Germany
Prior art keywords
thin film
film transistor
flat screen
fabrication methods
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005019839T
Other languages
English (en)
Inventor
Nam-Choul Yang
Hye-Dong Kim
Min-Chul Suh
Jae-Bon Koo
Sang-Min Lee
Hun-Jung Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Publication of DE602005019839D1 publication Critical patent/DE602005019839D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Element Separation (AREA)
DE602005019839T 2004-12-23 2005-12-20 Herstellungsmethoden für Dünnschichttransistor und Flachbildschirm Active DE602005019839D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040111097A KR100670255B1 (ko) 2004-12-23 2004-12-23 박막 트랜지스터, 이를 구비한 평판표시장치, 상기 박막트랜지스터의 제조방법, 및 상기 평판 표시장치의 제조방법

Publications (1)

Publication Number Publication Date
DE602005019839D1 true DE602005019839D1 (de) 2010-04-22

Family

ID=36075536

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005019839T Active DE602005019839D1 (de) 2004-12-23 2005-12-20 Herstellungsmethoden für Dünnschichttransistor und Flachbildschirm

Country Status (6)

Country Link
US (2) US20060138405A1 (de)
EP (1) EP1675196B1 (de)
JP (1) JP4504877B2 (de)
KR (1) KR100670255B1 (de)
CN (1) CN1819299B (de)
DE (1) DE602005019839D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100637204B1 (ko) * 2005-01-15 2006-10-23 삼성에스디아이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 구비한 평판 표시장치
KR20070053060A (ko) * 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
KR100787438B1 (ko) * 2005-12-12 2007-12-26 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조방법 및 이를 구비한 유기발광 디스플레이 장치
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
KR101277606B1 (ko) * 2006-03-22 2013-06-21 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
TWI358964B (en) * 2006-04-12 2012-02-21 Au Optronics Corp Electroluminescence display element and method for
JP2008034578A (ja) * 2006-07-28 2008-02-14 Sony Corp 半導体装置およびその製造方法
JP5147215B2 (ja) * 2006-10-31 2013-02-20 株式会社日立製作所 表示素子の画素駆動回路およびこれを利用した表示装置
CN101325219B (zh) * 2007-06-15 2010-09-29 群康科技(深圳)有限公司 薄膜晶体管基板及其制造方法
JP4589373B2 (ja) * 2007-10-29 2010-12-01 株式会社リコー 有機トランジスタ、有機トランジスタアレイ及び表示装置
KR101424012B1 (ko) * 2008-03-04 2014-08-04 삼성디스플레이 주식회사 표시장치와 그 제조방법
KR100963104B1 (ko) * 2008-07-08 2010-06-14 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR101183964B1 (ko) * 2008-08-11 2012-09-19 한국전자통신연구원 유기 박막의 국부적 결정화 방법 및 이를 이용한 유기 박막트랜지스터 제조 방법
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
KR101084198B1 (ko) * 2010-02-24 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP5659567B2 (ja) * 2010-06-11 2015-01-28 富士ゼロックス株式会社 有機トランジスタ及び有機トランジスタの製造方法
CN102723307A (zh) * 2011-03-30 2012-10-10 京东方科技集团股份有限公司 一种制备阵列基板的方法及tft结构
CN102504213B (zh) * 2011-11-15 2013-08-28 上海交通大学 可溶性含苯四羰基二亚胺基团的全共轭聚合物及制备方法
GB2515750B (en) * 2013-07-01 2017-11-15 Flexenable Ltd Supressing Leakage Currents in a Multi - TFT Device
JP2015019000A (ja) * 2013-07-12 2015-01-29 ソニー株式会社 電子デバイス及びその製造方法、並びに、画像表示装置及び画像表示装置を構成する基板
KR102550604B1 (ko) * 2016-08-03 2023-07-05 삼성디스플레이 주식회사 반도체장치 및 그 제조방법
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US6498114B1 (en) * 1999-04-09 2002-12-24 E Ink Corporation Method for forming a patterned semiconductor film
JP5208341B2 (ja) * 1999-07-21 2013-06-12 イー インク コーポレイション 電子デバイス中の有機半導体層を保護する方法
KR20010089334A (ko) * 1999-08-24 2001-10-06 요트.게.아. 롤페즈 표시장치
AU2001275542A1 (en) * 2000-06-16 2001-12-24 The Penn State Research Foundation Aqueous-based photolithography on organic materials
US6720198B2 (en) * 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
EP1291932A3 (de) * 2001-09-05 2006-10-18 Konica Corporation Organisches Dünnfilmhalbleiterelement und dessen Herstellung
JP2005079203A (ja) * 2003-08-28 2005-03-24 Canon Inc 電界効果型トランジスタおよびその製造方法
US6969634B2 (en) * 2003-09-24 2005-11-29 Lucent Technologies Inc. Semiconductor layers with roughness patterning
KR100592278B1 (ko) * 2004-06-08 2006-06-21 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 구비한 평판표시장치

Also Published As

Publication number Publication date
EP1675196A1 (de) 2006-06-28
JP2006179855A (ja) 2006-07-06
KR20060072451A (ko) 2006-06-28
EP1675196B1 (de) 2010-03-10
US8043887B2 (en) 2011-10-25
US20060138405A1 (en) 2006-06-29
CN1819299A (zh) 2006-08-16
US20100099215A1 (en) 2010-04-22
JP4504877B2 (ja) 2010-07-14
CN1819299B (zh) 2013-01-30
KR100670255B1 (ko) 2007-01-16

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