CN100407473C - 有机薄膜晶体管及其制造方法以及包含它的集成电路 - Google Patents

有机薄膜晶体管及其制造方法以及包含它的集成电路 Download PDF

Info

Publication number
CN100407473C
CN100407473C CN028175387A CN02817538A CN100407473C CN 100407473 C CN100407473 C CN 100407473C CN 028175387 A CN028175387 A CN 028175387A CN 02817538 A CN02817538 A CN 02817538A CN 100407473 C CN100407473 C CN 100407473C
Authority
CN
China
Prior art keywords
dielectric layer
self
film transistor
bta
organic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN028175387A
Other languages
English (en)
Chinese (zh)
Other versions
CN1554126A (zh
Inventor
T·W·凯利
D·V·穆耶里斯
M·J·佩勒莱特
T·D·邓巴
L·D·保德曼
T·P·史密斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN1554126A publication Critical patent/CN1554126A/zh
Application granted granted Critical
Publication of CN100407473C publication Critical patent/CN100407473C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
CN028175387A 2001-09-06 2002-08-26 有机薄膜晶体管及其制造方法以及包含它的集成电路 Expired - Fee Related CN100407473C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/947,845 US6433359B1 (en) 2001-09-06 2001-09-06 Surface modifying layers for organic thin film transistors
US09/947,845 2001-09-06

Publications (2)

Publication Number Publication Date
CN1554126A CN1554126A (zh) 2004-12-08
CN100407473C true CN100407473C (zh) 2008-07-30

Family

ID=25486873

Family Applications (1)

Application Number Title Priority Date Filing Date
CN028175387A Expired - Fee Related CN100407473C (zh) 2001-09-06 2002-08-26 有机薄膜晶体管及其制造方法以及包含它的集成电路

Country Status (8)

Country Link
US (1) US6433359B1 (enExample)
EP (1) EP1425806A2 (enExample)
JP (1) JP4511175B2 (enExample)
KR (1) KR20040029143A (enExample)
CN (1) CN100407473C (enExample)
AU (1) AU2002331736A1 (enExample)
TW (1) TWI225708B (enExample)
WO (1) WO2003023877A2 (enExample)

Families Citing this family (151)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396594B2 (en) * 2002-06-24 2008-07-08 The Trustees Of Princeton University Carrier applied coating layers
US7569285B2 (en) * 1996-10-17 2009-08-04 The Trustees Of Princeton University Enhanced bonding layers on titanium materials
US7815963B2 (en) 1996-10-17 2010-10-19 The Trustees Of Princeton University Enhanced bonding layers on titanium materials
US20060194008A1 (en) * 1999-09-22 2006-08-31 Princeton University Devices with multiple surface functionality
US6485986B1 (en) 1999-11-19 2002-11-26 Purdue Research Foundation Functionalized silicon surfaces
US6657378B2 (en) * 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
DE10153656A1 (de) * 2001-10-31 2003-05-22 Infineon Technologies Ag Verfahren zur Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Aufbringen einer reaktiven, die organische Halbleiterschicht im Kontaktbereich regio-selektiv dotierenden Zwischenschicht
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6677607B2 (en) * 2002-01-25 2004-01-13 Motorola, Inc. Organic semiconductor device having an oxide layer
US6768132B2 (en) * 2002-03-07 2004-07-27 3M Innovative Properties Company Surface modified organic thin film transistors
US6885146B2 (en) 2002-03-14 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates
US6891190B2 (en) * 2002-05-23 2005-05-10 Motorola, Inc. Organic semiconductor device and method
DE10226370B4 (de) * 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
US6870181B2 (en) * 2002-07-02 2005-03-22 Motorola, Inc. Organic contact-enhancing layer for organic field effect transistors
CN100594617C (zh) * 2002-07-31 2010-03-17 三菱化学株式会社 场效应晶体管
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US7285440B2 (en) * 2002-11-25 2007-10-23 International Business Machines Corporation Organic underlayers that improve the performance of organic semiconductors
US7088145B2 (en) * 2002-12-23 2006-08-08 3M Innovative Properties Company AC powered logic circuitry
EP1434281A3 (en) * 2002-12-26 2007-10-24 Konica Minolta Holdings, Inc. Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
US20040126708A1 (en) * 2002-12-31 2004-07-01 3M Innovative Properties Company Method for modifying the surface of a polymeric substrate
KR100968560B1 (ko) * 2003-01-07 2010-07-08 삼성전자주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의금속배선 형성방법
EP1601468A4 (en) * 2003-02-11 2006-11-29 Univ Princeton Surface-bonded, organic acid-based mono-layers
ITTO20030145A1 (it) * 2003-02-28 2004-09-01 Infm Istituto Naz Per La Fisi Ca Della Mater Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento.
JP2004327857A (ja) * 2003-04-25 2004-11-18 Pioneer Electronic Corp 有機トランジスタの製造方法および有機トランジスタ
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
US20040241396A1 (en) * 2003-05-29 2004-12-02 3M Innovative Properties Company Method of modifying a surface of a substrate and articles therefrom
US20040241323A1 (en) * 2003-05-29 2004-12-02 3M Innovative Properties Company Method for applying adhesive to a substrate
US20040241395A1 (en) * 2003-05-29 2004-12-02 3M Innovative Properties Company Method of modifying a surface of a substrate and articles therefrom
US6969166B2 (en) * 2003-05-29 2005-11-29 3M Innovative Properties Company Method for modifying the surface of a substrate
KR20040105975A (ko) * 2003-06-10 2004-12-17 삼성전자주식회사 반도체 소자용 배선 및 그의 제조 방법과 이를 포함하는박막 트랜지스터 표시판 및 그의 제조 방법
DE10328811B4 (de) * 2003-06-20 2005-12-29 Infineon Technologies Ag Verbindung zur Bildung einer selbstorganisierenden Monolage, Schichtstruktur, Halbleiterbauelement mit einer Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur
JP4470398B2 (ja) * 2003-06-23 2010-06-02 Ｔｄｋ株式会社 電界効果トランジスタ
JP4228204B2 (ja) * 2003-07-07 2009-02-25 セイコーエプソン株式会社 有機トランジスタの製造方法
US7091517B2 (en) * 2003-07-11 2006-08-15 Purdue Research Foundation Patterned functionalized silicon surfaces
US7109519B2 (en) * 2003-07-15 2006-09-19 3M Innovative Properties Company Bis(2-acenyl)acetylene semiconductors
KR100973811B1 (ko) 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
US7122828B2 (en) * 2003-09-24 2006-10-17 Lucent Technologies, Inc. Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
JP2005108949A (ja) * 2003-09-29 2005-04-21 Matsushita Electric Ind Co Ltd 電界効果トランジスタおよびその製造方法
KR100678771B1 (ko) 2003-09-30 2007-02-02 학교법인연세대학교 유기 박막 트랜지스터 및 그의 제조방법
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
DE10353093A1 (de) * 2003-11-12 2005-06-16 H.C. Starck Gmbh Unsymmetrische lineare organische Oligomere
US6989290B2 (en) * 2003-11-15 2006-01-24 Ari Aviram Electrical contacts for molecular electronic transistors
CN100421279C (zh) * 2003-11-17 2008-09-24 中国科学院长春应用化学研究所 含有修饰层的有机薄膜晶体管器件及其加工方法
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US7659138B2 (en) * 2003-12-26 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an organic semiconductor element
GB0400997D0 (en) * 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
KR100592503B1 (ko) * 2004-02-10 2006-06-23 진 장 유기 반도체의 선택적 증착을 통한 박막트랜지스터 어레이제조 방법
DE102004008784B3 (de) 2004-02-23 2005-09-15 Infineon Technologies Ag Verfahren zur Durchkontaktierung von Feldeffekttransistoren mit einer selbstorganisierten Monolage einer organischen Verbindung als Gatedielektrikum
JP4661065B2 (ja) * 2004-03-22 2011-03-30 セイコーエプソン株式会社 相補型有機半導体装置
JP4904541B2 (ja) * 2004-03-24 2012-03-28 独立行政法人科学技術振興機構 有機薄膜を有する基板及びそれを用いたトランジスタ並びにそれらの製造方法
US7838871B2 (en) 2004-03-24 2010-11-23 Samsung Mobile Display Co., Ltd. Organic field-effect transistor, flat panel display device including the same, and a method of manufacturing the organic field-effect transistor
NO321555B1 (no) 2004-03-26 2006-05-29 Thin Film Electronics Asa Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning
KR100615216B1 (ko) * 2004-04-29 2006-08-25 삼성에스디아이 주식회사 유기 억셉터막을 구비한 유기 박막 트랜지스터
DE102004022603A1 (de) * 2004-05-07 2005-12-15 Infineon Technologies Ag Ultradünne Dielektrika und deren Anwendung in organischen Feldeffekt-Transistoren
US7935836B2 (en) * 2004-05-18 2011-05-03 Alexander Graham Fallis Compounds comprising a linear series of five fused carbon rings, and preparation thereof
US7655809B2 (en) * 2004-05-18 2010-02-02 University Of Ottawa Compounds comprising a linear series of five fused carbon rings, and preparation thereof
DE102004025423B4 (de) 2004-05-24 2008-03-06 Qimonda Ag Dünnfilm-Feldeffekt-Transistor mit Gate-Dielektrikum aus organischem Material und Verfahren zu dessen Herstellung
WO2005122293A2 (en) * 2004-06-08 2005-12-22 Princeton University Formation of ordered thin films of organics on metal oxide surfaces
US7019328B2 (en) * 2004-06-08 2006-03-28 Palo Alto Research Center Incorporated Printed transistors
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
CN1741298B (zh) * 2004-08-23 2010-07-14 财团法人工业技术研究院 提高有机半导体载子迁移率的方法
TWI234304B (en) * 2004-09-03 2005-06-11 Ind Tech Res Inst Process of increasing carrier mobility of organic semiconductor
GB2418062A (en) * 2004-09-03 2006-03-15 Seiko Epson Corp An organic Field-Effect Transistor with a charge transfer injection layer
KR100659061B1 (ko) * 2004-09-20 2006-12-19 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판표시장치
US7399668B2 (en) * 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ
US20060113569A1 (en) * 2004-11-03 2006-06-01 Akinwande Akintunde I Control of threshold voltage in organic field effect transistors
US20060105199A1 (en) * 2004-11-18 2006-05-18 3M Innovative Properties Company Electroluminescent devices containing trans-1,2-bis(acenyl)ethylene compounds
US7315042B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds
KR100669802B1 (ko) * 2004-12-04 2007-01-16 삼성에스디아이 주식회사 박막 트랜지스터, 이의 제조 방법 및 상기 박막트랜지스터를 구비한 평판 표시 장치
GB2421115A (en) * 2004-12-09 2006-06-14 Seiko Epson Corp A self-aligning patterning method for use in the manufacture of a plurality of thin film transistors
KR101064773B1 (ko) * 2004-12-09 2011-09-14 삼성전자주식회사 유기박막 트랜지스터의 제조방법
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
WO2006081274A1 (en) * 2005-01-27 2006-08-03 Aculon, Inc. Thin films
US7504132B2 (en) * 2005-01-27 2009-03-17 International Business Machines Corporation Selective placement of carbon nanotubes on oxide surfaces
KR100647683B1 (ko) * 2005-03-08 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
US7151276B2 (en) * 2005-03-09 2006-12-19 3M Innovative Properties Company Semiconductors containing perfluoroether acyl oligothiophene compounds
JP4972870B2 (ja) * 2005-03-29 2012-07-11 セイコーエプソン株式会社 半導体素子の製造方法および半導体装置
US7282735B2 (en) * 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
US20060267004A1 (en) * 2005-05-27 2006-11-30 Fallis Alexander G Compounds comprising a linear series of five fused carbon rings, and preparation thereof
KR100777162B1 (ko) * 2005-07-06 2007-12-03 양재우 저전압 유기나노트랜지스터 소자 및 그의 제조방법
US7319153B2 (en) * 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
US7964012B2 (en) 2005-08-03 2011-06-21 Hollingsworth & Vose Company Filter media with improved conductivity
KR100658286B1 (ko) * 2005-08-11 2006-12-14 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 이용한 평판표시장치
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
JP4860980B2 (ja) * 2005-10-20 2012-01-25 ローム株式会社 モータ駆動回路およびそれを用いたディスク装置
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
JP2007129007A (ja) * 2005-11-02 2007-05-24 Hitachi Ltd 有機半導体膜を有する半導体装置の製造方法
KR100730159B1 (ko) * 2005-11-10 2007-06-19 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이를 구비한 평판표시장치, 상기유기 박막 트랜지스터의 제조방법
WO2007070673A1 (en) * 2005-12-15 2007-06-21 Cabot Corporation Transparent polymer composites
KR100772662B1 (ko) * 2006-02-01 2007-11-02 학교법인 포항공과대학교 전계 효과 전하 이동도를 증가시킬 수 있는 유기 박막트랜지스터 및 그 제조방법
TW200731589A (en) * 2006-02-06 2007-08-16 Yang Jae Woo Organic thin film transistor using ultra-thin metal oxide as gate dielectric and fabrication method thereof
KR100788758B1 (ko) * 2006-02-06 2007-12-26 양재우 저전압 유기 박막 트랜지스터 및 그 제조 방법
KR100824045B1 (ko) * 2006-02-24 2008-04-22 고려대학교 산학협력단 펜타센 유기박막 트랜지스터의 제조방법
TW200737520A (en) * 2006-03-17 2007-10-01 Univ Nat Chiao Tung Gate dielectric structure and an organic thin film transistor based thereon
US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
US7608679B2 (en) * 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
US7666968B2 (en) * 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
CN100555702C (zh) * 2006-04-29 2009-10-28 中国科学院长春应用化学研究所 有机半导体晶体薄膜及弱取向外延生长制备方法和应用
CN100590904C (zh) * 2006-06-06 2010-02-17 中华映管股份有限公司 图案化制程及应用此制程的有机薄膜晶体管的制作方法
JP5120588B2 (ja) * 2006-07-10 2013-01-16 独立行政法人科学技術振興機構 分子素子
US7470974B2 (en) * 2006-07-14 2008-12-30 Cabot Corporation Substantially transparent material for use with light-emitting device
KR101151159B1 (ko) * 2006-09-19 2012-06-01 삼성전자주식회사 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법
KR101275999B1 (ko) * 2006-09-22 2013-06-19 엘지디스플레이 주식회사 박막트랜지스터, 이를 구비하는 표시장치 및 이들의 제조방법
CN101165938B (zh) * 2006-10-19 2010-12-01 三星移动显示器株式会社 有机薄膜晶体管、其制法及包括其的平板显示器
US20080135891A1 (en) * 2006-12-08 2008-06-12 Palo Alto Research Center, Incorporated Transistor Device Formed on a Flexible Substrate Including Anodized Gate Dielectric
TWI323034B (en) * 2006-12-25 2010-04-01 Ind Tech Res Inst Electronic devices with hybrid high-k dielectric and fabrication methods thereof
CN101221981B (zh) * 2007-01-09 2010-06-23 财团法人工业技术研究院 具有混合高介电材料层的电子元件及其制造方法
WO2008091571A2 (en) * 2007-01-22 2008-07-31 Nano Terra Inc. High-throughput apparatus for patterning flexible substrates and method of using the same
KR100858928B1 (ko) * 2007-02-20 2008-09-17 고려대학교 산학협력단 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
JPWO2008102619A1 (ja) * 2007-02-23 2010-05-27 コニカミノルタホールディングス株式会社 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
JP5320746B2 (ja) * 2007-03-28 2013-10-23 凸版印刷株式会社 薄膜トランジスタ
GB0706653D0 (en) * 2007-04-04 2007-05-16 Cambridge Display Tech Ltd Organic thin film transistors
KR100873997B1 (ko) 2007-06-12 2008-12-17 한국화학연구원 수분 차단 특성이 개선된 유기보호막을 적용한 유기박막트랜지스터의 제조방법
EP2183781B1 (en) * 2007-06-28 2012-10-24 3M Innovative Properties Company Method for forming gate structures
EP2063471B1 (en) * 2007-11-26 2012-10-03 Hitachi Ltd. Organic field effect transistor
JP5380831B2 (ja) * 2007-12-07 2014-01-08 株式会社リコー 有機トランジスタ及びその製造方法
CN101926017B (zh) * 2007-12-17 2013-09-25 3M创新有限公司 基于蒽的可溶液加工的有机半导体
US7968871B2 (en) * 2008-04-11 2011-06-28 Xerox Corporation Organic thin film transistor
US8754683B2 (en) * 2008-06-18 2014-06-17 Micron Technology, Inc. Locked-loop quiescence apparatus, systems, and methods
CN102119164A (zh) * 2008-06-19 2011-07-06 3M创新有限公司 可溶液处理的有机半导体
KR101004734B1 (ko) * 2008-07-29 2011-01-04 한국전자통신연구원 표면 에너지 제어를 이용한 유기 박막 트랜지스터 제조방법
US20100032654A1 (en) * 2008-08-11 2010-02-11 Motorola, Inc. Semiconductor Device Having Silane Treated Interface
JP4844767B2 (ja) 2008-10-03 2011-12-28 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
US8106387B2 (en) * 2008-10-14 2012-01-31 Xerox Corporation Organic thin film transistors
DE102009047315A1 (de) * 2009-11-30 2011-06-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Organischer Feldeffekttransistor und Verfahren zur Herstellung desselben
SG183337A1 (en) * 2010-02-25 2012-09-27 Merck Patent Gmbh Electrode treatment process for organic electronic devices
FR2960703B1 (fr) * 2010-05-28 2012-05-18 Commissariat Energie Atomique Dispositif optoelectronique avec electrode enterree
CN102683591A (zh) * 2011-03-10 2012-09-19 中国科学院微电子研究所 一种制备有机场效应晶体管结构的方法
CN102723439A (zh) * 2011-03-29 2012-10-10 中国科学院微电子研究所 基于有机场效应晶体管的存储单元、存储器及其制备方法
JP2012089857A (ja) * 2011-11-28 2012-05-10 Dainippon Printing Co Ltd パターン形成体の製造方法、および有機薄膜トランジスタ
JP6287839B2 (ja) * 2012-08-06 2018-03-07 株式会社ニコン 基板処理装置
CN203894790U (zh) * 2013-04-11 2014-10-22 德昌电机(深圳)有限公司 智能卡、身份识别卡、银行卡及智能卡触板
GB201407956D0 (en) * 2014-05-06 2014-06-18 Isis Innovation Vacuum deposited modification of polymer surfaces
US9701698B2 (en) 2014-06-13 2017-07-11 The Chinese University Of Hong Kong Self-assembled monolayers of phosphonic acids as dielectric surfaces for high-performance organic thin film transistors
KR102038124B1 (ko) 2016-06-27 2019-10-29 숭실대학교산학협력단 유기 반도체 소자의 제조 방법
WO2018004219A2 (ko) * 2016-06-27 2018-01-04 숭실대학교 산학협력단 유기 반도체 소자의 제조 방법
US10991894B2 (en) 2015-03-19 2021-04-27 Foundation Of Soongsil University-Industry Cooperation Compound of organic semiconductor and organic semiconductor device using the same
WO2018004093A1 (ko) * 2016-06-30 2018-01-04 숭실대학교산학협력단 유기 반도체 소자 및 그 제조 방법
US9976975B2 (en) * 2015-07-24 2018-05-22 King Abdulaziz University Method of making thin film humidity sensors
CN105140261B (zh) 2015-07-28 2018-09-11 京东方科技集团股份有限公司 有机薄膜晶体管及其制备方法、阵列基板及显示装置
US10134995B2 (en) 2016-01-29 2018-11-20 University Of Kentucky Research Foundation Water processable N-type organic semiconductor
CN109515020B (zh) * 2017-09-18 2021-03-23 云谷（固安）科技有限公司 喷墨打印方法
CN109713125A (zh) * 2018-12-27 2019-05-03 广州天极电子科技有限公司 一种晶体管及其制备方法
CN113488591B (zh) * 2021-07-05 2024-11-08 南京大学 一种平面型无寄生电容的有机场效应晶体管及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539061A (en) * 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers
EP0786820A2 (en) * 1996-01-29 1997-07-30 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
DE19815220A1 (de) * 1998-03-27 1999-09-30 Univ Dresden Tech Verfahren zur haftfesten und dichten Metallisierung von chemisch oder galvanisch nicht oder nur schwer plattierbaren Oberflächen sowie Haftvermittler zur Durchführung des Verfahrens
WO2001001502A2 (en) * 1999-06-30 2001-01-04 Thin Film Electronics Asa A means for electrical contacting or isolation of organic or inorganic semiconductors and a method for its fabrication

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB680343A (en) 1949-07-25 1952-10-01 C D Patents Ltd Improvements in or relating to the manufacture of synthetic resins from aromatic substituted olefinic hydrocarbons
US5079179A (en) 1987-10-09 1992-01-07 Hughes Aircraft Company Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US5667542A (en) * 1996-05-08 1997-09-16 Minnesota Mining And Manufacturing Company Antiloading components for abrasive articles
US5965679A (en) 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
EP1093663A2 (en) 1998-06-19 2001-04-25 Thin Film Electronics ASA Integrated inorganic/organic complementary thin-film transistor circuit
US6351036B1 (en) * 1998-08-20 2002-02-26 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with a barrier film and process for making same
US6252245B1 (en) 1999-03-29 2001-06-26 Howard Edan Katz Device comprising n-channel semiconductor material
US6265243B1 (en) 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
US6338988B1 (en) * 1999-09-30 2002-01-15 International Business Machines Corporation Method for fabricating self-aligned thin-film transistors to define a drain and source in a single photolithographic step
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539061A (en) * 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers
EP0786820A2 (en) * 1996-01-29 1997-07-30 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
DE19815220A1 (de) * 1998-03-27 1999-09-30 Univ Dresden Tech Verfahren zur haftfesten und dichten Metallisierung von chemisch oder galvanisch nicht oder nur schwer plattierbaren Oberflächen sowie Haftvermittler zur Durchführung des Verfahrens
WO2001001502A2 (en) * 1999-06-30 2001-01-04 Thin Film Electronics Asa A means for electrical contacting or isolation of organic or inorganic semiconductors and a method for its fabrication

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
performances of sexithiophene basedthin-film transistorusingself-assembled monolayers. J. Collet，.MAT. RES. SOC.SYMP. PROC.,Vol.488 . 1998 *
synthèse d'alkylphonates à longues chaines hydrocarbonées,modifications chimiques et applications-ii. additiondehp(o)(oeT)2 sur les alcènes et phosphonation directed'halogénures d'alkyles. N. Pelaprat，.Eur. Polym. J,Vol.32 No.6. 1996 *

Also Published As

Publication number Publication date
JP4511175B2 (ja) 2010-07-28
CN1554126A (zh) 2004-12-08
AU2002331736A1 (en) 2003-03-24
EP1425806A2 (en) 2004-06-09
TWI225708B (en) 2004-12-21
WO2003023877A2 (en) 2003-03-20
US6433359B1 (en) 2002-08-13
JP2005503026A (ja) 2005-01-27
KR20040029143A (ko) 2004-04-03
WO2003023877A3 (en) 2003-09-25

Similar Documents

Publication Publication Date Title
CN100407473C (zh) 有机薄膜晶体管及其制造方法以及包含它的集成电路
JP4589004B2 (ja) 有機薄膜トランジスタ及びその製造方法
US8614437B2 (en) Organic underlayers that improve the performance of organic semiconductors
US6617609B2 (en) Organic thin film transistor with siloxane polymer interface
JP4700162B2 (ja) 有機回路の作製プロセス
CN112563330B (zh) 一种垂直单分子场效应晶体管集成器件及制备方法
US9385332B2 (en) Organic-inorganic hybrid multilayer gate dielectrics for thin film transistors
US20070178710A1 (en) Method for sealing thin film transistors
KR20080040119A (ko) 디클로로포스포릴기를 함유하는 자기조립단분자막 형성화합물을 이용한 유기박막 트랜지스터의 제조방법
Peng et al. A Transfer Method for High‐Mobility, Bias‐Stable, and Flexible Organic Field‐Effect Transistors
Gundlach et al. Improved organic thin film transistor performance using chemically modified gate dielectrics
JP2005159367A (ja) 多結晶有機半導体のパターン形成された領域を有するデバイスおよびその製造方法
KR101649553B1 (ko) 유기 전계 효과 트랜지스터의 제조방법
US8614445B2 (en) Alkylsilane laminate, production method thereof and thin-film transistor
Kang et al. Novel solution process for high-mobility C60 fullerene field-effect transistors
KR102764160B1 (ko) 무기/유기 하이브리드 상보형 반도체 디바이스 및 그 제조 방법
KR20100071283A (ko) 단결정 ＴＩＰＳ－ＰＥＮ을 활성층으로 하는 ＦｅＦＥＴ 및ＦｅＦＥＴ형 비휘발성 메모리
Kim et al. Electrical Characteristics of Pentacene Thin-Film Transistors with Polyvinylpyrrolidone Gate Insulator

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080730

Termination date: 20110826