KR20030057377A - 발광장치, 그 제조방법 및 그 제조장치 - Google Patents

발광장치, 그 제조방법 및 그 제조장치 Download PDF

Info

Publication number
KR20030057377A
KR20030057377A KR1020020083936A KR20020083936A KR20030057377A KR 20030057377 A KR20030057377 A KR 20030057377A KR 1020020083936 A KR1020020083936 A KR 1020020083936A KR 20020083936 A KR20020083936 A KR 20020083936A KR 20030057377 A KR20030057377 A KR 20030057377A
Authority
KR
South Korea
Prior art keywords
light emitting
layer
film
organic compound
chamber
Prior art date
Application number
KR1020020083936A
Other languages
English (en)
Korean (ko)
Inventor
야마자키순페이
하마타니토시지
타카야마토루
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20030057377A publication Critical patent/KR20030057377A/ko

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
KR1020020083936A 2001-12-28 2002-12-26 발광장치, 그 제조방법 및 그 제조장치 KR20030057377A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001401687 2001-12-28
JPJP-P-2001-00401687 2001-12-28

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020070136108A Division KR100924741B1 (ko) 2001-12-28 2007-12-24 발광장치
KR1020090086916A Division KR100956100B1 (ko) 2001-12-28 2009-09-15 발광장치 및 그것을 포함한 전자기기

Publications (1)

Publication Number Publication Date
KR20030057377A true KR20030057377A (ko) 2003-07-04

Family

ID=19189810

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020020083936A KR20030057377A (ko) 2001-12-28 2002-12-26 발광장치, 그 제조방법 및 그 제조장치
KR1020070136108A KR100924741B1 (ko) 2001-12-28 2007-12-24 발광장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020070136108A KR100924741B1 (ko) 2001-12-28 2007-12-24 발광장치

Country Status (5)

Country Link
US (8) US6815723B2 (zh)
JP (3) JP2009117398A (zh)
KR (2) KR20030057377A (zh)
CN (2) CN101232042B (zh)
TW (1) TWI280818B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101080354B1 (ko) * 2004-08-12 2011-11-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR101318307B1 (ko) * 2006-12-20 2013-10-18 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
KR101450889B1 (ko) * 2008-01-07 2014-10-14 엘지디스플레이 주식회사 전계발광표시장치

Families Citing this family (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100945467B1 (ko) 2001-10-09 2010-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스위칭소자, 표시장치, 그 스위칭소자를 사용한 발광장치및 반도체장치
JP4202012B2 (ja) * 2001-11-09 2008-12-24 株式会社半導体エネルギー研究所 発光装置及び電流記憶回路
US6815723B2 (en) 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
US7098069B2 (en) * 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
JP4046267B2 (ja) * 2002-03-26 2008-02-13 株式会社半導体エネルギー研究所 表示装置
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
JP4089544B2 (ja) * 2002-12-11 2008-05-28 ソニー株式会社 表示装置及び表示装置の製造方法
JP4517304B2 (ja) * 2002-12-11 2010-08-04 ソニー株式会社 表示装置及び表示装置の製造方法
TWI232066B (en) * 2002-12-25 2005-05-01 Au Optronics Corp Manufacturing method of organic light emitting diode for reducing reflection of external light
TW580846B (en) * 2003-01-10 2004-03-21 Au Optronics Corp Organic electroluminescence display device and the fabricating method
CN1736129B (zh) * 2003-01-10 2010-06-16 株式会社半导体能源研究所 发光元件及其制作方法
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US6991332B1 (en) * 2003-05-02 2006-01-31 Fan Nong-Qiang Digital hand stamp with memory to store multiple images
US7728516B2 (en) * 2003-06-13 2010-06-01 Fuji Electric Holdings Co., Ltd. Organic EL display
JP4799176B2 (ja) * 2003-07-24 2011-10-26 株式会社半導体エネルギー研究所 発光装置の作製方法
US7211454B2 (en) * 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
EP1511095A3 (en) * 2003-08-19 2011-02-23 LG Display Co., Ltd. Organic electroluminescent device and method of manufacturing the same
WO2005022496A2 (en) 2003-08-29 2005-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7520790B2 (en) 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
US7541734B2 (en) * 2003-10-03 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having a layer with a metal oxide and a benzoxazole derivative
US8048251B2 (en) 2003-10-28 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing optical film
EP1557891A3 (en) 2004-01-20 2006-10-04 LG Electronics Inc. Organic electroluminescent device and fabrication method thereof
JP4378186B2 (ja) 2004-02-06 2009-12-02 キヤノン株式会社 有機ｅｌ素子アレイ
EP1566838A3 (en) * 2004-02-20 2010-09-01 LG Electronics, Inc. Organic electro-luminescence display device and fabricating method thereof
TWI274978B (en) * 2004-02-25 2007-03-01 Advanced Display Proc Eng Co Apparatus for manufacturing flat-panel display
TWI367686B (en) * 2004-04-07 2012-07-01 Semiconductor Energy Lab Light emitting device, electronic device, and television device
JP4393402B2 (ja) * 2004-04-22 2010-01-06 キヤノン株式会社 有機電子素子の製造方法および製造装置
WO2005109542A1 (en) * 2004-05-11 2005-11-17 Lg Chem. Ltd. Organic electronic device
US8350466B2 (en) 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7753751B2 (en) 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
KR100718555B1 (ko) * 2004-10-11 2007-05-15 두산디앤디 주식회사 잉크젯 프린팅과 저분자 유기증착 방법을 겸용하는 대면적 유기 박막 증착장치
US8772783B2 (en) * 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4329740B2 (ja) * 2004-10-22 2009-09-09 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法、及び有機エレクトロルミネッセンス装置
KR100741968B1 (ko) * 2004-11-23 2007-07-23 삼성에스디아이 주식회사 유기 전계 발광 표시 소자 및 그 제조방법
JP2006156035A (ja) * 2004-11-26 2006-06-15 Toshiba Matsushita Display Technology Co Ltd 表示装置
JP4712372B2 (ja) * 2004-12-16 2011-06-29 株式会社半導体エネルギー研究所 発光装置
KR20060104531A (ko) * 2005-03-30 2006-10-09 삼성에스디아이 주식회사 발광표시장치의 제조방법
US7602119B2 (en) * 2005-04-25 2009-10-13 Eastman Kodak Company OLED with magenta and green emissive layers
US7436113B2 (en) * 2005-04-25 2008-10-14 Eastman Kodak Company Multicolor OLED displays
US7471041B2 (en) * 2005-04-25 2008-12-30 Eastman Kodak Company OLED multicolor displays
JP5214440B2 (ja) * 2005-05-23 2013-06-19 トムソン ライセンシング 複合透明上部電極をもつ照明または画像表示のための発光パネル
US20060290276A1 (en) * 2005-06-22 2006-12-28 Eastman Kodak Company OLED device having spacers
TWI460851B (zh) 2005-10-17 2014-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI339442B (en) 2005-12-09 2011-03-21 Samsung Mobile Display Co Ltd Flat panel display and method of fabricating the same
US7659664B2 (en) * 2006-05-30 2010-02-09 Tpo Displays Corp. System for displaying image
CN101083275B (zh) * 2006-05-30 2010-12-01 奇美电子股份有限公司 显示影像系统
KR20080013068A (ko) * 2006-08-07 2008-02-13 학교법인 포항공과대학교 레이저를 이용한 플렉서블 소자의 제조방법 및 플렉서블소자
KR100722118B1 (ko) * 2006-09-04 2007-05-25 삼성에스디아이 주식회사 유기전계발광 표시 장치
KR100824880B1 (ko) * 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824881B1 (ko) * 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
TWI323047B (en) * 2006-11-28 2010-04-01 Univ Nat Taiwan The method for forming electronic devices by using protection layers
KR100833738B1 (ko) 2006-11-30 2008-05-29 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824902B1 (ko) * 2006-12-13 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
JP2011501361A (ja) * 2007-10-15 2011-01-06 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 溶液処理された電子デバイス用のバックプレーン構造
WO2009079327A1 (en) 2007-12-14 2009-06-25 E. I. Du Pont De Nemours And Company Backplane structures for electronic devices
JP4734368B2 (ja) * 2008-03-31 2011-07-27 株式会社 日立ディスプレイズ 有機発光表示装置
US20100176369A2 (en) * 2008-04-15 2010-07-15 Mark Oliver Metalized Silicon Substrate for Indium Gallium Nitride Light-Emitting Diodes
US8609994B2 (en) * 2008-09-24 2013-12-17 Alliance For Sustainable Energy, Llc Thin film electronic devices with conductive and transparent gas and moisture permeation barriers
EP2178133B1 (en) 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
KR100970397B1 (ko) * 2008-12-17 2010-07-15 삼성모바일디스플레이주식회사 유기 발광 장치 및 이의 제조 방법
TWI607670B (zh) * 2009-01-08 2017-12-01 半導體能源研究所股份有限公司 發光裝置及電子裝置
KR101156436B1 (ko) * 2010-01-19 2012-06-18 삼성모바일디스플레이주식회사 광학필름 및 이를 구비하는 유기 발광 디스플레이 장치
KR101084198B1 (ko) * 2010-02-24 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 표시 장치
KR101146984B1 (ko) * 2010-03-09 2012-05-22 삼성모바일디스플레이주식회사 유기 발광 표시 장치
KR101801351B1 (ko) * 2010-04-28 2017-11-27 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 표시 장치의 제조 방법 및 이를 이용하여 제조된 유기 발광 표시 장치
US8894458B2 (en) 2010-04-28 2014-11-25 Samsung Display Co., Ltd. Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method
KR101822526B1 (ko) * 2010-06-30 2018-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
WO2012017497A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子
WO2012017489A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子、表示装置および発光装置
WO2012017491A1 (ja) * 2010-08-06 2012-02-09 パナソニック株式会社 発光素子、発光素子を備えた発光装置および発光素子の製造方法
KR20120106568A (ko) * 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
JP6080437B2 (ja) * 2011-09-30 2017-02-15 キヤノン株式会社 有機発光装置の製造方法
CN102646676B (zh) * 2011-11-03 2015-06-10 京东方科技集团股份有限公司 一种tft阵列基板
US9721998B2 (en) 2011-11-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
KR101900364B1 (ko) * 2011-12-22 2018-09-20 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
US8912547B2 (en) 2012-01-20 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and semiconductor device
JP6030118B2 (ja) 2012-03-07 2016-11-24 株式会社カネカ 発光デバイスの製造方法および発光デバイス
KR101632298B1 (ko) 2012-07-16 2016-06-22 삼성디스플레이 주식회사 평판 표시장치 및 그 제조방법
JP6142151B2 (ja) 2012-07-31 2017-06-07 株式会社Ｊｏｌｅｄ 表示装置および電子機器
KR102105287B1 (ko) 2012-08-01 2020-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP6204012B2 (ja) 2012-10-17 2017-09-27 株式会社半導体エネルギー研究所 発光装置
JP6076683B2 (ja) 2012-10-17 2017-02-08 株式会社半導体エネルギー研究所 発光装置
JP6155020B2 (ja) 2012-12-21 2017-06-28 株式会社半導体エネルギー研究所 発光装置及びその製造方法
JP6216125B2 (ja) 2013-02-12 2017-10-18 株式会社半導体エネルギー研究所 発光装置
KR102022394B1 (ko) * 2013-02-12 2019-09-19 삼성디스플레이 주식회사 유기 발광 표시 장치
WO2014136476A1 (ja) * 2013-03-04 2014-09-12 コニカミノルタ株式会社 面発光ユニット
JP6104649B2 (ja) 2013-03-08 2017-03-29 株式会社半導体エネルギー研究所 発光装置
JP5991490B2 (ja) * 2013-03-22 2016-09-14 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置
KR102139577B1 (ko) 2013-10-24 2020-07-31 삼성디스플레이 주식회사 유기 발광 표시 장치
JP6160499B2 (ja) 2014-02-06 2017-07-12 ソニー株式会社 表示装置および表示装置の製造方法、並びに電子機器
CN103943662B (zh) * 2014-04-21 2017-03-15 上海和辉光电有限公司 全彩有机发光二极管结构及其制作方法
JP6399801B2 (ja) * 2014-05-13 2018-10-03 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置
KR20150145525A (ko) * 2014-06-20 2015-12-30 엘지디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102401987B1 (ko) 2014-08-01 2022-05-25 올싸거널 인코포레이티드 유기 전자 장치의 포토리소그래피 패터닝
KR102401993B1 (ko) 2014-08-01 2022-05-25 올싸거널 인코포레이티드 장치의 포토리소그래피 패터닝
US10503074B2 (en) 2014-08-01 2019-12-10 Orthogonal, Inc. Photolithographic patterning of devices
US10580987B2 (en) 2014-08-01 2020-03-03 Orthogonal, Inc. Photolithographic patterning of organic electronic devices
KR102329809B1 (ko) * 2014-10-08 2021-11-22 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20160053001A (ko) * 2014-10-30 2016-05-13 삼성디스플레이 주식회사 투명 표시 기판, 투명 표시 장치 및 투명 표시 장치의 제조 방법
CN105742310A (zh) * 2014-12-10 2016-07-06 昆山工研院新型平板显示技术中心有限公司 一种双层像素发光装置
JP6412791B2 (ja) 2014-12-18 2018-10-24 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置
JP6685675B2 (ja) * 2015-09-07 2020-04-22 株式会社Ｊｏｌｅｄ 有機ｅｌ素子、それを用いた有機ｅｌ表示パネル、及び有機ｅｌ表示パネルの製造方法
KR101797018B1 (ko) 2015-11-30 2017-11-13 엘지디스플레이 주식회사 유기발광 표시장치와 그를 포함한 헤드 장착형 디스플레이
KR102652261B1 (ko) * 2016-12-07 2024-03-27 엘지디스플레이 주식회사 유기발광소자를 이용한 조명장치
CN106784198A (zh) * 2017-01-26 2017-05-31 湘能华磊光电股份有限公司 一种半导体芯片的制作方法
JP7124059B2 (ja) 2017-08-31 2022-08-23 マイクロン テクノロジー，インク． 半導体デバイス、トランジスタ、および金属酸化物半導体デバイスを接触させるための関連する方法
US10943953B2 (en) 2017-08-31 2021-03-09 Micron Technology, Inc. Semiconductor devices, hybrid transistors, and related methods
CN107516664A (zh) * 2017-09-28 2017-12-26 京东方科技集团股份有限公司 一种阵列基板的制备方法、阵列基板及显示装置
CN107681063A (zh) * 2017-10-11 2018-02-09 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
TWI662334B (zh) * 2018-02-06 2019-06-11 友達光電股份有限公司 顯示模組與顯示裝置
KR102521879B1 (ko) * 2018-04-12 2023-04-18 삼성디스플레이 주식회사 표시장치
KR102569175B1 (ko) * 2018-04-24 2023-08-22 삼성전자 주식회사 Led디스플레이 및 이를 구비한 전자 장치
CN112640579A (zh) * 2018-09-07 2021-04-09 夏普株式会社 显示设备
CN110767682B (zh) * 2018-10-31 2022-10-21 苏州清越光电科技股份有限公司 显示屏及显示终端
KR20200093737A (ko) * 2019-01-28 2020-08-06 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
JP7326137B2 (ja) * 2019-12-03 2023-08-15 株式会社ジャパンディスプレイ 表示装置
WO2024069668A1 (ja) * 2022-09-26 2024-04-04 シャープディスプレイテクノロジー株式会社 表示デバイス、表示デバイスの製造方法

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028278A (ja) 1983-07-26 1985-02-13 Mitsubishi Electric Corp 光電変換素子
US4950614A (en) 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
US4878097A (en) 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US4871236A (en) 1985-09-18 1989-10-03 Kabushiki Kaisha Toshiba Organic thin film display element
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
JPH04192376A (ja) 1990-11-22 1992-07-10 Sekisui Chem Co Ltd タンデム型有機太陽電池
JPH05108014A (ja) 1991-10-16 1993-04-30 Fuji Electric Co Ltd Ｅｌ表示パネルのカラー表示用発光膜の成膜方法
JPH05190285A (ja) * 1992-01-10 1993-07-30 Fuji Electric Co Ltd エレクトロルミネッセンス表示パネル
JPH06318725A (ja) 1993-05-10 1994-11-15 Ricoh Co Ltd 光起電力素子およびその製造方法
US5519931A (en) * 1994-03-16 1996-05-28 Syncor International Corporation Container and method for transporting a syringe containing radioactive material
US5682043A (en) 1994-06-28 1997-10-28 Uniax Corporation Electrochemical light-emitting devices
JP3577117B2 (ja) 1994-10-07 2004-10-13 Ｔｄｋ株式会社 有機エレクトロルミネセンス素子の製法
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5677546A (en) 1995-05-19 1997-10-14 Uniax Corporation Polymer light-emitting electrochemical cells in surface cell configuration
JPH08321380A (ja) * 1995-05-25 1996-12-03 Chisso Corp 有機電界発光素子
US6072450A (en) * 1996-11-28 2000-06-06 Casio Computer Co., Ltd. Display apparatus
JP3463971B2 (ja) 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブｅｌ発光装置
JPH10270171A (ja) 1997-01-27 1998-10-09 Junji Kido 有機エレクトロルミネッセント素子
KR100248392B1 (ko) 1997-05-15 2000-09-01 정선종 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법
JP3939399B2 (ja) * 1997-07-22 2007-07-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3994482B2 (ja) 1997-08-27 2007-10-17 双葉電子工業株式会社 マルチカラー有機エレクトロルミネッセンス素子及びその製造方法
DE69941200D1 (de) * 1998-01-09 2009-09-17 Sony Corp Elektrolumineszente Vorrichtung und Herstellungsverfahren
JP4210872B2 (ja) 1998-01-09 2009-01-21 ソニー株式会社 電界発光素子及びその製造方法
JP3852509B2 (ja) 1998-01-09 2006-11-29 ソニー株式会社 電界発光素子及びその製造方法
JP3206646B2 (ja) * 1998-01-22 2001-09-10 日本電気株式会社 多色発光有機ｅｌパネルおよびその製造方法
JPH11251067A (ja) 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JP3884564B2 (ja) 1998-05-20 2007-02-21 出光興産株式会社 有機ｅｌ発光素子およびそれを用いた発光装置
JPH11345688A (ja) * 1998-06-01 1999-12-14 Tdk Corp 有機ｅｌディスプレイ
JP2000012217A (ja) * 1998-06-19 2000-01-14 Idemitsu Kosan Co Ltd エレクトロルミネッセンス表示用色変換フィルターの製造方法
JP2000021567A (ja) * 1998-07-03 2000-01-21 Futaba Corp 有機ｅｌ表示素子
US6451415B1 (en) 1998-08-19 2002-09-17 The Trustees Of Princeton University Organic photosensitive optoelectronic device with an exciton blocking layer
US6198092B1 (en) 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration
US6297495B1 (en) 1998-08-19 2001-10-02 The Trustees Of Princeton University Organic photosensitive optoelectronic devices with a top transparent electrode
US6198091B1 (en) 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with a mixed electrical configuration
US6352777B1 (en) 1998-08-19 2002-03-05 The Trustees Of Princeton University Organic photosensitive optoelectronic devices with transparent electrodes
US6278055B1 (en) 1998-08-19 2001-08-21 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically series configuration
JP2000133451A (ja) 1998-10-23 2000-05-12 Toray Ind Inc 有機電界発光素子の製造方法
JP3817081B2 (ja) 1999-01-29 2006-08-30 パイオニア株式会社 有機ｅｌ素子の製造方法
JP2001076886A (ja) * 1999-09-03 2001-03-23 Futaba Corp 透明タッチスイッチ付き有機ｅｌデバイスとその製造方法
US6660409B1 (en) 1999-09-16 2003-12-09 Panasonic Communications Co., Ltd Electronic device and process for producing the same
JP3847496B2 (ja) 1999-09-16 2006-11-22 パナソニック コミュニケーションズ株式会社 電子デバイス及びその製造方法
JP4942867B2 (ja) 1999-09-17 2012-05-30 株式会社半導体エネルギー研究所 Ｅｌ表示装置及び電子装置
TW522453B (en) 1999-09-17 2003-03-01 Semiconductor Energy Lab Display device
JP4854840B2 (ja) * 1999-10-12 2012-01-18 株式会社半導体エネルギー研究所 発光装置の作製方法
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
JP2001110573A (ja) * 1999-10-13 2001-04-20 Toppan Printing Co Ltd エレクトロルミネッセンス表示素子用基板およびエレクトロルミネッセンス表示素子
JP2001118675A (ja) 1999-10-21 2001-04-27 Tdk Corp 有機ｅｌ素子
JP4255187B2 (ja) 1999-10-22 2009-04-15 スタンレー電気株式会社 有機ｅｌ表示装置の製造方法および該方法により製造された有機ｅｌ表示装置
JP2000123975A (ja) * 1999-11-15 2000-04-28 Seiko Epson Corp アクティブマトリックス型有機ｅｌ表示体
TW525122B (en) 1999-11-29 2003-03-21 Semiconductor Energy Lab Electronic device
TW587239B (en) * 1999-11-30 2004-05-11 Semiconductor Energy Lab Electric device
JP2001222023A (ja) 1999-12-01 2001-08-17 Sharp Corp 液晶表示装置
TW511298B (en) * 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
JP4477729B2 (ja) 2000-01-19 2010-06-09 シャープ株式会社 光電変換素子及びそれを用いた太陽電池
US6580213B2 (en) 2000-01-31 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of manufacturing the same
JP4592967B2 (ja) 2000-01-31 2010-12-08 株式会社半導体エネルギー研究所 発光装置及び電気器具
TW525305B (en) 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
TWI282697B (en) 2000-02-25 2007-06-11 Seiko Epson Corp Organic electroluminescence device
US7129918B2 (en) * 2000-03-10 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving electronic device
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
JP4556282B2 (ja) 2000-03-31 2010-10-06 株式会社デンソー 有機ｅｌ素子およびその製造方法
TW516164B (en) * 2000-04-21 2003-01-01 Semiconductor Energy Lab Self-light emitting device and electrical appliance using the same
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
TW521256B (en) * 2000-05-18 2003-02-21 Semiconductor Energy Lab Electronic device and method of driving the same
JP4581187B2 (ja) 2000-06-13 2010-11-17 ソニー株式会社 表示装置の製造方法
JP2001357975A (ja) 2000-06-16 2001-12-26 Rohm Co Ltd 有機ｅｌ素子
US6879110B2 (en) * 2000-07-27 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Method of driving display device
US6822629B2 (en) 2000-08-18 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6664732B2 (en) * 2000-10-26 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP2002164170A (ja) 2000-11-27 2002-06-07 Matsushita Electric Works Ltd 白色有機エレクトロルミネッセンスパネル
TW545080B (en) * 2000-12-28 2003-08-01 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2002313585A (ja) 2001-04-17 2002-10-25 Sharp Corp 有機ｌｅｄ発光素子およびその製造方法
US6657378B2 (en) 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
US6580027B2 (en) 2001-06-11 2003-06-17 Trustees Of Princeton University Solar cells using fullerenes
EP1396033A4 (en) 2001-06-11 2011-05-18 Univ Princeton ORGANIC PHOTOVOLTAIC COMPONENTS
JP4611578B2 (ja) 2001-07-26 2011-01-12 淳二 城戸 有機エレクトロルミネッセント素子
US6524884B1 (en) 2001-08-22 2003-02-25 Korea Electronics And Telecommunications Research Institute Method for fabricating an organic electroluminescene device having organic field effect transistor and organic eloectroluminescence diode
JP4498669B2 (ja) * 2001-10-30 2010-07-07 株式会社半導体エネルギー研究所 半導体装置、表示装置、及びそれらを具備する電子機器
US7042024B2 (en) 2001-11-09 2006-05-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
US6815723B2 (en) * 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
US7098069B2 (en) 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
EP1367659B1 (en) 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
TWI272874B (en) 2002-08-09 2007-02-01 Semiconductor Energy Lab Organic electroluminescent device
US7045955B2 (en) 2002-08-09 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence element and a light emitting device using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101080354B1 (ko) * 2004-08-12 2011-11-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR101318307B1 (ko) * 2006-12-20 2013-10-18 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
KR101450889B1 (ko) * 2008-01-07 2014-10-14 엘지디스플레이 주식회사 전계발광표시장치

Also Published As

Publication number Publication date
JP2012169659A (ja) 2012-09-06
CN100375290C (zh) 2008-03-12
US20030122140A1 (en) 2003-07-03
US10497755B2 (en) 2019-12-03
CN1428869A (zh) 2003-07-09
US20170005146A1 (en) 2017-01-05
KR20080007208A (ko) 2008-01-17
US7420210B2 (en) 2008-09-02
TW200301669A (en) 2003-07-01
US20140319499A1 (en) 2014-10-30
US7719014B2 (en) 2010-05-18
US20110266548A1 (en) 2011-11-03
CN101232042B (zh) 2011-06-15
US7982206B2 (en) 2011-07-19
CN101232042A (zh) 2008-07-30
US20060208263A1 (en) 2006-09-21
US20100295052A1 (en) 2010-11-25
US9450030B2 (en) 2016-09-20
US7057209B2 (en) 2006-06-06
JP2013048108A (ja) 2013-03-07
US20050045917A1 (en) 2005-03-03
JP5564529B2 (ja) 2014-07-30
JP2009117398A (ja) 2009-05-28
US20090008643A1 (en) 2009-01-08
US9048203B2 (en) 2015-06-02
US6815723B2 (en) 2004-11-09
JP5577393B2 (ja) 2014-08-20
KR100924741B1 (ko) 2009-11-05
TWI280818B (en) 2007-05-01

Similar Documents

Publication Publication Date Title
KR100924741B1 (ko) 발광장치
US9653519B2 (en) Light emitting device, method of preparing the same and device for fabricating the same
KR100979925B1 (ko) 발광장치 및 그 제조방법
JP4627966B2 (ja) 発光装置およびその作製方法
JP2003257657A (ja) 発光装置およびその作製方法、および製造装置
JP2003288983A (ja) 発光装置およびその作製方法、及び製造装置
KR100956100B1 (ko) 발광장치 및 그것을 포함한 전자기기
JP4408114B2 (ja) 発光装置の作製方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
J201 Request for trial against refusal decision
A107 Divisional application of patent
B601 Maintenance of original decision after re-examination before a trial
J801 Dismissal of trial

Free format text: REJECTION OF TRIAL FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20090828

Effective date: 20091204