KR20030035940A - 단결정의 제조방법 - Google Patents
단결정의 제조방법 Download PDFInfo
- Publication number
- KR20030035940A KR20030035940A KR1020020065168A KR20020065168A KR20030035940A KR 20030035940 A KR20030035940 A KR 20030035940A KR 1020020065168 A KR1020020065168 A KR 1020020065168A KR 20020065168 A KR20020065168 A KR 20020065168A KR 20030035940 A KR20030035940 A KR 20030035940A
- Authority
- KR
- South Korea
- Prior art keywords
- melt
- crystal
- crucible
- frequency
- rotation speed
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
융액량(kg) | A :도가니 회전수(rpm) | B :결정회전수(rpm) | C :구동진동수(1/min)C=4×(A+B) | D :(1,2)모드의출렁거림공진진동수(1/min) | E :구동/공진진동수비(%)E=(C/D) |
20.0 | 10 | 20 | 120 | 131.6 | 91% |
12.5 | 10 | 20 | 120 | 128.7 | 93% |
11.6 | 9 | 20 | 116 | 127.4 | 91% |
10.0 | 8 | 20 | 112 | 123.8 | 90% |
8.3 | 8 | 18 | 104 | 118.4 | 88% |
6.6 | 6 | 18 | 96 | 110.6 | 87% |
5.0 | 5 | 16 | 84 | 99.6 | 84% |
4.0 | 5 | 16 | 84 | 90.6 | 92% |
융액량(kg) | A :도가니 회전수(rpm) | B :결정회전수(rpm) | C :구동진동수(1/min)C=4×(A+B) | D1:(1,2)모드의출렁거림공진진동수(1/min) | D2:(0,1)모등의 출렁거림공진진동수(1/min) | E1:구동/공진진동수비(%)E1=C1/D1 | E2:구동/공진진동수비(%)E2=C2/D2 |
20.0 | 10 | 20 | 120 | 131.6 | 150.8 | 91 | 80 |
12.5 | 10 | 20 | 120 | 128.7 | 147.9 | 93 | 81 |
12.0 | 12 | 22 | 136 | 128.1 | 147.5 | 106 | 90 |
9.0 | 11 | 21 | 128 | 120.8 | 142.0 | 106 | 92 |
6.0 | 10 | 21 | 124 | 106.8 | 128.9 | 116 | 93 |
5.5 | 12 | 21 | 132 | 103.5 | 125.5 | 128 | 105 |
4.0 | 10 | 21 | 120 | 90.9 | 111.2 | 132 | 107 |
3.3 | 10 | 20 | 120 | 83.9 | 103.7 | 143 | 116 |
Claims (2)
- 초크랄스키법(CZ)법에 의한 단결정의 제조방법에 있어서, 단결정 육성과정에서 도가니의 회전수와 결정의 회전수에 의해 정해지는 융액을 구동하는 진동수가, 융액의 출렁거림 공진진동수의 95%에서 105%의 범위에 들어오지 않도록, 도가니 회전수 및 결정회전수 또는 어느 것을 제어하는 것을 특징으로 하는 단결정의 제조방법.
- 초크랄스키법에 의한 단결정의 제조방법에 있어서, 단결정 육성과정에서 도가니의 회전수와 결정의 회전수에 의해 정해지는 융액을 구동하는 진동수가, 융액의 출렁거림 공진진동수의 95%에서 105%의 범위에 들어오는 경우, 그간에 출렁거림에 의한 융액의 진동회수가 2000회를 초과하지 않도록, 도가니 회전수 및 결정회전수 또는 그 어느 것을 제어하는 것을 특징으로 하는 단결정의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001333325A JP3927786B2 (ja) | 2001-10-30 | 2001-10-30 | 単結晶の製造方法 |
JPJP-P-2001-00333325 | 2001-10-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030035940A true KR20030035940A (ko) | 2003-05-09 |
KR100500365B1 KR100500365B1 (ko) | 2005-07-11 |
Family
ID=19148613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0065168A KR100500365B1 (ko) | 2001-10-30 | 2002-10-24 | 단결정의 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6899759B2 (ko) |
EP (1) | EP1308543B1 (ko) |
JP (1) | JP3927786B2 (ko) |
KR (1) | KR100500365B1 (ko) |
CN (1) | CN1316075C (ko) |
DE (1) | DE60200268T2 (ko) |
TW (1) | TWI240771B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10968534B2 (en) | 2018-01-18 | 2021-04-06 | Sk Siltron Co., Ltd. | Pulling control device for single crystal ingot growth and pulling control method applied thereto |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7229495B2 (en) * | 2002-12-23 | 2007-06-12 | Siltron Inc. | Silicon wafer and method for producing silicon single crystal |
JP4193503B2 (ja) * | 2003-01-31 | 2008-12-10 | 株式会社Sumco | シリコン単結晶の製造方法 |
US7344598B2 (en) * | 2004-09-15 | 2008-03-18 | National Taiwan University | Rotationally-vibrated unidirectional solidification crystal growth system and its method |
CN101407940B (zh) * | 2008-07-24 | 2012-01-25 | 中国科学院上海硅酸盐研究所 | 振动场下晶体生长装置和生长方法 |
CN103160933B (zh) * | 2011-12-18 | 2016-07-06 | 洛阳金诺机械工程有限公司 | 一种加工晶体材料时对坩埚的均温装置及其方法 |
JP6583142B2 (ja) * | 2016-05-25 | 2019-10-02 | 株式会社Sumco | シリコン単結晶の製造方法及び装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0055619B1 (en) * | 1980-12-29 | 1985-05-29 | Monsanto Company | Method for regulating concentration and distribution of oxygen in czochralski grown silicon |
JP2546736B2 (ja) * | 1990-06-21 | 1996-10-23 | 信越半導体株式会社 | シリコン単結晶引上方法 |
JP2939919B2 (ja) * | 1993-01-27 | 1999-08-25 | コマツ電子金属株式会社 | 半導体単結晶引き上げ装置 |
CN1178844A (zh) * | 1996-08-08 | 1998-04-15 | Memc电子材料有限公司 | 切克劳斯基法生长硅的温度和时间关系的控制方法 |
EP1029955B1 (en) * | 1997-08-19 | 2004-10-27 | Shin-Etsu Handotai Co., Ltd | Apparatus and method for producing single crystal |
JP3585024B2 (ja) * | 1998-09-07 | 2004-11-04 | 東芝セラミックス株式会社 | 単結晶引上装置 |
JP2000169290A (ja) * | 1998-12-08 | 2000-06-20 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
-
2001
- 2001-10-30 JP JP2001333325A patent/JP3927786B2/ja not_active Expired - Lifetime
-
2002
- 2002-10-17 EP EP02023068A patent/EP1308543B1/en not_active Expired - Lifetime
- 2002-10-17 DE DE60200268T patent/DE60200268T2/de not_active Expired - Lifetime
- 2002-10-24 KR KR10-2002-0065168A patent/KR100500365B1/ko active IP Right Grant
- 2002-10-29 TW TW091132032A patent/TWI240771B/zh not_active IP Right Cessation
- 2002-10-30 CN CNB021469776A patent/CN1316075C/zh not_active Expired - Lifetime
- 2002-10-30 US US10/283,683 patent/US6899759B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10968534B2 (en) | 2018-01-18 | 2021-04-06 | Sk Siltron Co., Ltd. | Pulling control device for single crystal ingot growth and pulling control method applied thereto |
Also Published As
Publication number | Publication date |
---|---|
CN1415788A (zh) | 2003-05-07 |
EP1308543B1 (en) | 2004-03-17 |
US6899759B2 (en) | 2005-05-31 |
JP2003137688A (ja) | 2003-05-14 |
TWI240771B (en) | 2005-10-01 |
CN1316075C (zh) | 2007-05-16 |
EP1308543A1 (en) | 2003-05-07 |
US20030089301A1 (en) | 2003-05-15 |
DE60200268T2 (de) | 2004-08-12 |
TW200300027A (en) | 2003-05-01 |
JP3927786B2 (ja) | 2007-06-13 |
KR100500365B1 (ko) | 2005-07-11 |
DE60200268D1 (de) | 2004-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4973377A (en) | Crystal diameter controlling method | |
US5795382A (en) | Oxygen precipitation control in Czochralski-grown silicon crystals | |
CN105506731B (zh) | 单晶硅生长氧含量控制方法 | |
KR100500365B1 (ko) | 단결정의 제조방법 | |
JP3841863B2 (ja) | シリコン単結晶の引き上げ方法 | |
CN105483817B (zh) | 单晶硅生长超声波控氧技术 | |
CN109097825A (zh) | 一种防止直拉单晶生长晃动的工艺方法 | |
JP2795030B2 (ja) | 単結晶シリコン棒の製造方法 | |
EP0829561B1 (en) | Process for producing silicon single crystal | |
US5820672A (en) | OISF control in czochralski-grown crystals | |
US6267815B1 (en) | Method for pulling a single crystal | |
US5458083A (en) | Growth method for a rod form of single oxide crystal | |
JP2767074B2 (ja) | シリコン単結晶の引上方法 | |
JP3255753B2 (ja) | ルチル棒状単結晶の育成方法 | |
KR20030069822A (ko) | 고도핑 실리콘 단결정의 제조방법 | |
JPH09250945A (ja) | シリコン単結晶のねじれ振動検知装置及びねじれ振動検知方法並びにそれを用いた単結晶の製造方法 | |
EP0419061B1 (en) | Method for pulling a silicon single crystal | |
JP2006282426A (ja) | ランガサイト単結晶及びその製造方法 | |
RU2193079C1 (ru) | Способ получения монокристаллического кремния | |
JPS5926996A (ja) | 単結晶の製造方法 | |
JP2000119095A (ja) | シリコン単結晶の製造方法およびその製造装置 | |
JPS59184798A (ja) | ガリウム砒素単結晶の製造方法 | |
JPH11322488A (ja) | 単結晶引き上げ方法 | |
JPS5848520B2 (ja) | ニオブ酸リチウム単結晶の引上げ方法 | |
JPH03177393A (ja) | 単結晶の製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130620 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20140619 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20150619 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20160616 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20170623 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20180621 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20190620 Year of fee payment: 15 |