DE60200268D1 - Einkristallzüchtungsverfahren - Google Patents
EinkristallzüchtungsverfahrenInfo
- Publication number
- DE60200268D1 DE60200268D1 DE60200268T DE60200268T DE60200268D1 DE 60200268 D1 DE60200268 D1 DE 60200268D1 DE 60200268 T DE60200268 T DE 60200268T DE 60200268 T DE60200268 T DE 60200268T DE 60200268 D1 DE60200268 D1 DE 60200268D1
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- crystal growth
- growth
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001333325 | 2001-10-30 | ||
JP2001333325A JP3927786B2 (ja) | 2001-10-30 | 2001-10-30 | 単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60200268D1 true DE60200268D1 (de) | 2004-04-22 |
DE60200268T2 DE60200268T2 (de) | 2004-08-12 |
Family
ID=19148613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60200268T Expired - Lifetime DE60200268T2 (de) | 2001-10-30 | 2002-10-17 | Einkristallzüchtungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US6899759B2 (de) |
EP (1) | EP1308543B1 (de) |
JP (1) | JP3927786B2 (de) |
KR (1) | KR100500365B1 (de) |
CN (1) | CN1316075C (de) |
DE (1) | DE60200268T2 (de) |
TW (1) | TWI240771B (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7229495B2 (en) * | 2002-12-23 | 2007-06-12 | Siltron Inc. | Silicon wafer and method for producing silicon single crystal |
JP4193503B2 (ja) * | 2003-01-31 | 2008-12-10 | 株式会社Sumco | シリコン単結晶の製造方法 |
US7344598B2 (en) * | 2004-09-15 | 2008-03-18 | National Taiwan University | Rotationally-vibrated unidirectional solidification crystal growth system and its method |
CN101407940B (zh) * | 2008-07-24 | 2012-01-25 | 中国科学院上海硅酸盐研究所 | 振动场下晶体生长装置和生长方法 |
CN103160933B (zh) * | 2011-12-18 | 2016-07-06 | 洛阳金诺机械工程有限公司 | 一种加工晶体材料时对坩埚的均温装置及其方法 |
JP6583142B2 (ja) * | 2016-05-25 | 2019-10-02 | 株式会社Sumco | シリコン単結晶の製造方法及び装置 |
KR102011210B1 (ko) | 2018-01-18 | 2019-08-14 | 에스케이실트론 주식회사 | 단결정 잉곳 성장용 인상제어장치 및 이에 적용된 인상제어방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0055619B1 (de) * | 1980-12-29 | 1985-05-29 | Monsanto Company | Verfahren zur Regelung der Konzentration und Distribution von Sauerstoff in Silizium, gezüchtet nach der Czochralskimethode |
JP2546736B2 (ja) * | 1990-06-21 | 1996-10-23 | 信越半導体株式会社 | シリコン単結晶引上方法 |
JP2939919B2 (ja) * | 1993-01-27 | 1999-08-25 | コマツ電子金属株式会社 | 半導体単結晶引き上げ装置 |
CN1178844A (zh) * | 1996-08-08 | 1998-04-15 | Memc电子材料有限公司 | 切克劳斯基法生长硅的温度和时间关系的控制方法 |
EP1029955B1 (de) * | 1997-08-19 | 2004-10-27 | Shin-Etsu Handotai Co., Ltd | Anlage und verfahren zur herstellung eines einkristalls |
JP3585024B2 (ja) * | 1998-09-07 | 2004-11-04 | 東芝セラミックス株式会社 | 単結晶引上装置 |
JP2000169290A (ja) * | 1998-12-08 | 2000-06-20 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
-
2001
- 2001-10-30 JP JP2001333325A patent/JP3927786B2/ja not_active Expired - Lifetime
-
2002
- 2002-10-17 DE DE60200268T patent/DE60200268T2/de not_active Expired - Lifetime
- 2002-10-17 EP EP02023068A patent/EP1308543B1/de not_active Expired - Lifetime
- 2002-10-24 KR KR10-2002-0065168A patent/KR100500365B1/ko active IP Right Grant
- 2002-10-29 TW TW091132032A patent/TWI240771B/zh not_active IP Right Cessation
- 2002-10-30 US US10/283,683 patent/US6899759B2/en not_active Expired - Lifetime
- 2002-10-30 CN CNB021469776A patent/CN1316075C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE60200268T2 (de) | 2004-08-12 |
US20030089301A1 (en) | 2003-05-15 |
TW200300027A (en) | 2003-05-01 |
KR100500365B1 (ko) | 2005-07-11 |
TWI240771B (en) | 2005-10-01 |
CN1316075C (zh) | 2007-05-16 |
JP3927786B2 (ja) | 2007-06-13 |
KR20030035940A (ko) | 2003-05-09 |
CN1415788A (zh) | 2003-05-07 |
JP2003137688A (ja) | 2003-05-14 |
EP1308543B1 (de) | 2004-03-17 |
EP1308543A1 (de) | 2003-05-07 |
US6899759B2 (en) | 2005-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: SILTRONIC AG, 81737 MUENCHEN, DE |
|
8364 | No opposition during term of opposition |