KR20020087966A - 정전 방전 보호 회로 - Google Patents
정전 방전 보호 회로 Download PDFInfo
- Publication number
- KR20020087966A KR20020087966A KR1020027013590A KR20027013590A KR20020087966A KR 20020087966 A KR20020087966 A KR 20020087966A KR 1020027013590 A KR1020027013590 A KR 1020027013590A KR 20027013590 A KR20027013590 A KR 20027013590A KR 20020087966 A KR20020087966 A KR 20020087966A
- Authority
- KR
- South Korea
- Prior art keywords
- esd
- bus
- circuit
- circuits
- distributed
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 5
- 230000001052 transient effect Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
Description
Claims (10)
- VSS 전원 공급 버스(43 또는 72) 및 정전 방전(ESD) 버스(48 또는 70)를 갖는 집적 회로에 있어서,상기 ESD 버스 및 상기 VSS 전원 공급 버스에 연결된 복수의 입력/출력(I/O) 패드들(38 또는 74) 및,복수의 개별 트랜지스터들(40 또는 88)을 포함하고,각각의 개별 트랜지스터는 대응하는 I/O 패드에 연결되고,상기 복수의 개별 트랜지스터들은 상기 복수의 I/O 패드들에 대해 ESD 보호를 제공하기 위해 상기 복수의 I/O 패드들 중 적어도 하나에 대한 ESD 이벤트에 응답하여 병렬로 동작하는, 집적 회로.
- 제 1 항에 있어서, 상기 복수의 개별 트랜지스터들의 각각은 제 1 전류 전극, 제 2 전류 전극, 및 제어 전극을 포함하고, 상기 제 1 전류 전극은 상기 ESD 버스에 연결되고, 상기 제 2 전류 전극은 상기 VSS 전원 공급 버스에 연결되며, 상기 집적 회로는 상기 ESD 버스에 연결된 제 1 단자와 트리거 버스를 통해 상기 복수의 개별 트랜지스터들의 제어 전극들 각각에 연결된 제 2 단자를 갖는 원격 트리거 회로(37 또는 68)를 더 포함하는, 집적 회로.
- 제 2 항에 있어서, 상기 집적 회로는 상기 트리거 버스(47)와 원격 트리거회로의 제 2 단자(55) 사이에 연결된 버퍼 회로(50)를 더 포함하는, 집적 회로.
- 제 2 항에 있어서, 복수의 버퍼 회로들(42 또는 86)을 더 포함하며, 상기 복수의 버퍼 회로들 각각은 상기 트리거 버스(47 또는 71)와 상기 복수의 개별 트랜지스터들(40 또는 88) 중 적어도 하나의 상기 제어 전극 사이에 연결되는, 집적 회로.
- 제 2 항에 있어서, 복수의 용량성 소자들(84)을 더 포함하고, 상기 복수의 용량성 소자들의 각각의 용량성 소자는 상기 복수의 개별 트랜지스터들 중 적어도 하나의 상기 제어 전극에 연결된 제 1 단자와 상기 VSS 전원 공급 버스에 연결된 제 2 단자를 가지는, 집적 회로.
- 제 1 항에 있어서, 상기 복수의 개별 트랜지스터들은 상기 ESD 이벤트 발생시 주 방전 경로를 제공하는, 집적 회로.
- VSS 전원 공급 버스(43 또는 72) 및 정전 방전(ESD) 버스(48 또는 70)를 갖는 정전 방전(ESD) 보호를 위한 분산된 트랜지스터 회로에 있어서,상기 ESD 버스 및 VSS 전원 공급 버스에 연결된 복수의 입력/출력(I/O) 회로들(30, 32, 36 또는 62, 64,66),복수의 분산된 트랜지스터들(40 또는 88)로서, 상기 복수의 I/O 회로들의 각각은 상기 복수의 분산 트랜지스터들 중 하나를 포함하며, 각각의 분산 트랜지스터는 상기 ESD 버스에 연결된 제 1 전류 전극, 상기 VSS 버스에 연결된 제 2 전류 전극, 및 제어 전극을 가지는, 상기 복수의 분산된 트랜지스터들(40 또는 88), 및상기 복수의 분산 트랜지스터들에 대응하며, 상기 ESD 버스에 연결된 제 1 단자, 및 트리거 버스(47 또는 71)를 통해 상기 분산 트랜지스터들의 제어 전극들 각각에 연결된 제 2 단자를 갖는 트리거 회로(37 또는 68)를 포함하는 분산 트랜지스터 회로.
- 제 7 항에 있어서, 복수의 버퍼 회로들(42 또는 86)을 더 포함하며, 각각의 버퍼 회로는 대응하는 분산 트랜지스터(40 또는 88)의 상기 제어 전극과 트리거 버스(47 또는 71) 사이에 연결되는, 분산 트랜지스터 회로.
- 제 7 항에 있어서, 복수의 용량성 소자들(84)을 더 포함하고, 상기 복수의 용량성 소자들의 각각의 용량성 소자는 상기 복수의 분산된 트랜지스터들 중 적어도 하나의 상기 제어 전극에 연결된 제 1 단자와 상기 VSS 전원 공급 버스에 연결된 제 2 단자를 가지는, 분산 트랜지스터 회로.
- 제 7 항에 있어서, 상기 복수의 분산 트랜지스터들은 병렬로 동작하고 ESD 이벤트 발생시 주 방전 경로를 통해 ESD 보호를 제공하는, 분산 트랜지스터 회로.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/546,601 | 2000-04-10 | ||
US09/546,601 US6385021B1 (en) | 2000-04-10 | 2000-04-10 | Electrostatic discharge (ESD) protection circuit |
PCT/US2001/010976 WO2001078148A1 (en) | 2000-04-10 | 2001-04-04 | Electrostatic discharge (esd) protection circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020087966A true KR20020087966A (ko) | 2002-11-23 |
KR100801863B1 KR100801863B1 (ko) | 2008-02-12 |
Family
ID=24181147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027013590A KR100801863B1 (ko) | 2000-04-10 | 2001-04-04 | 정전 방전 보호 회로 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6385021B1 (ko) |
EP (1) | EP1277236B1 (ko) |
JP (1) | JP5162070B2 (ko) |
KR (1) | KR100801863B1 (ko) |
CN (1) | CN1242478C (ko) |
AU (1) | AU2001251308A1 (ko) |
WO (1) | WO2001078148A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7280329B2 (en) | 2003-08-27 | 2007-10-09 | Samsung Electronics Co., Ltd. | Integrated circuit device having input/output electrostatic discharge protection cell equipped with electrostatic discharge protection element and power clamp |
KR100937652B1 (ko) * | 2002-12-31 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 반도체 장치의 정전기방전 보호회로 |
Families Citing this family (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7320457B2 (en) * | 1997-02-07 | 2008-01-22 | Sri International | Electroactive polymer devices for controlling fluid flow |
JP3796034B2 (ja) * | 1997-12-26 | 2006-07-12 | 株式会社ルネサステクノロジ | レベル変換回路および半導体集積回路装置 |
US7537197B2 (en) * | 1999-07-20 | 2009-05-26 | Sri International | Electroactive polymer devices for controlling fluid flow |
US7064472B2 (en) * | 1999-07-20 | 2006-06-20 | Sri International | Electroactive polymer devices for moving fluid |
FR2803100B1 (fr) * | 1999-12-28 | 2002-12-06 | St Microelectronics Sa | Dispositif de protection de lignes d'interconnexions dans un circuit integre |
AU2001238675A1 (en) * | 2000-02-23 | 2001-09-03 | Sri International | Electroactive polymer thermal electric generators |
US6933610B2 (en) * | 2002-02-20 | 2005-08-23 | Silicon Pipe, Inc. | Method of bonding a semiconductor die without an ESD circuit and a separate ESD circuit to an external lead, and a semiconductor device made thereby |
TW529153B (en) * | 2002-02-27 | 2003-04-21 | United Microelectronics Corp | Electrostatic discharge protection circuit |
US7154719B2 (en) * | 2002-03-22 | 2006-12-26 | Freescale Semiconductor, Inc. | Circuit for electrostatic discharge protection |
US6757147B1 (en) * | 2002-05-03 | 2004-06-29 | Pericom Semiconductor Corp. | Pin-to-pin ESD-protection structure having cross-pin activation |
US6724603B2 (en) * | 2002-08-09 | 2004-04-20 | Motorola, Inc. | Electrostatic discharge protection circuitry and method of operation |
US20040212936A1 (en) * | 2002-09-27 | 2004-10-28 | Salling Craig T. | Diode-string substrate-pumped electrostatic discharge protection |
US7164565B2 (en) * | 2002-11-29 | 2007-01-16 | Sigmatel, Inc. | ESD protection circuit |
US7209332B2 (en) * | 2002-12-10 | 2007-04-24 | Freescale Semiconductor, Inc. | Transient detection circuit |
US7074687B2 (en) * | 2003-04-04 | 2006-07-11 | Freescale Semiconductor, Inc. | Method for forming an ESD protection device |
US7616414B2 (en) * | 2003-04-25 | 2009-11-10 | Broadcom Corporation | ESD protection circuit for high speed signaling including T/R switches |
US7203043B2 (en) | 2003-05-30 | 2007-04-10 | Hewlett-Packard Development Company, L.P. | Method and structure for external control of ESD protection in electronic circuits |
JP2005093497A (ja) | 2003-09-12 | 2005-04-07 | Toshiba Corp | 保護回路を有する半導体装置 |
US6970336B2 (en) * | 2003-10-10 | 2005-11-29 | Freescale Semiconductor, Inc. | Electrostatic discharge protection circuit and method of operation |
DE10349405A1 (de) * | 2003-10-21 | 2005-05-25 | Austriamicrosystems Ag | Aktive Schutzschaltungsanordnung |
KR100645039B1 (ko) * | 2003-12-15 | 2006-11-10 | 삼성전자주식회사 | 정전기 방전 보호 소자 및 그 제조방법 |
DE102004004789B3 (de) * | 2004-01-30 | 2005-03-03 | Infineon Technologies Ag | ESD-Schutzschaltkreis für eine elektronische Schaltung mit mehreren Versorgungsspannungen |
KR100781537B1 (ko) * | 2004-02-07 | 2007-12-03 | 삼성전자주식회사 | 정전기 방전 보호 반도체 소자 및 이를 포함하는 반도체집적 회로 |
JP5085139B2 (ja) * | 2004-02-07 | 2012-11-28 | サムスン エレクトロニクス カンパニー リミテッド | 静電気保護機能を有するバッファ回路 |
DE102004007655B8 (de) * | 2004-02-17 | 2013-10-10 | Infineon Technologies Ag | Halbleiterschaltungen mit ESD-Schutzvorrichtung mit einer mit einem Substrat- oder Guard-Ring-Kontakt kontaktierten ESD-Schutzschaltung |
US7573691B2 (en) * | 2004-04-12 | 2009-08-11 | Agere Systems Inc. | Electrical over stress robustness |
TWI234266B (en) * | 2004-06-24 | 2005-06-11 | Novatek Microelectronics Corp | Level shifter circuits for ESD protection |
JP5008840B2 (ja) * | 2004-07-02 | 2012-08-22 | ローム株式会社 | 半導体装置 |
US20060028776A1 (en) * | 2004-08-09 | 2006-02-09 | Michael Stockinger | Electrostatic discharge protection for an integrated circuit |
JP4195431B2 (ja) * | 2004-10-07 | 2008-12-10 | 株式会社東芝 | 静電放電の検証方法および半導体装置の製造方法 |
JP4942007B2 (ja) * | 2004-10-25 | 2012-05-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
US7518841B2 (en) * | 2004-11-02 | 2009-04-14 | Industrial Technology Research Institute | Electrostatic discharge protection for power amplifier in radio frequency integrated circuit |
US7292421B2 (en) * | 2004-11-12 | 2007-11-06 | Texas Instruments Incorporated | Local ESD power rail clamp which implements switchable I/O decoupling capacitance function |
US7328882B2 (en) * | 2005-01-06 | 2008-02-12 | Honeywell International Inc. | Microfluidic modulating valve |
US7446990B2 (en) * | 2005-02-11 | 2008-11-04 | Freescale Semiconductor, Inc. | I/O cell ESD system |
US7301741B2 (en) * | 2005-05-17 | 2007-11-27 | Freescale Semiconductor, Inc. | Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit |
TWI278093B (en) * | 2005-07-15 | 2007-04-01 | Novatek Microelectronics Corp | Level shifter ESD protection circuit with power-on-sequence consideration |
CN100442510C (zh) * | 2005-08-26 | 2008-12-10 | 联咏科技股份有限公司 | 考量电源启动顺序的准位移位器静电放电防护电路 |
US7639462B2 (en) * | 2005-10-25 | 2009-12-29 | Honeywell International Inc. | Method and system for reducing transient event effects within an electrostatic discharge power clamp |
US8254069B2 (en) * | 2005-10-28 | 2012-08-28 | Fairchild Semiconductor Corporation | ESD protection for outputs |
US7593202B2 (en) * | 2005-11-01 | 2009-09-22 | Freescale Semiconductor, Inc. | Electrostatic discharge (ESD) protection circuit for multiple power domain integrated circuit |
US7453676B2 (en) * | 2005-11-16 | 2008-11-18 | Huh Yoon J | RC-triggered ESD power clamp circuit and method for providing ESD protection |
TWI268599B (en) * | 2005-12-08 | 2006-12-11 | Via Tech Inc | ESD protection circuits and related techniques |
DE102005060368A1 (de) * | 2005-12-16 | 2007-06-28 | Infineon Technologies Ag | Verfahren zum ESD-Schutz einer elektronischen Schaltung und entsprechend ausgestaltete elektronische Schaltung |
JP4923645B2 (ja) * | 2006-03-16 | 2012-04-25 | 株式会社デンソー | 入力保護回路 |
US7542255B2 (en) * | 2006-03-16 | 2009-06-02 | Denso Corporation | Input protection circuit |
US20070236842A1 (en) * | 2006-04-07 | 2007-10-11 | Hynix Semiconductor Inc. | Electrostatic discharge protection circuit |
US7808117B2 (en) * | 2006-05-16 | 2010-10-05 | Freescale Semiconductor, Inc. | Integrated circuit having pads and input/output (I/O) cells |
US7551415B2 (en) * | 2006-08-30 | 2009-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Repair circuitry with an enhanced ESD protection device |
US7589945B2 (en) * | 2006-08-31 | 2009-09-15 | Freescale Semiconductor, Inc. | Distributed electrostatic discharge protection circuit with varying clamp size |
WO2009006318A1 (en) | 2007-06-29 | 2009-01-08 | Artificial Muscle, Inc. | Electroactive polymer transducers for sensory feedback applications |
US7777998B2 (en) | 2007-09-10 | 2010-08-17 | Freescale Semiconductor, Inc. | Electrostatic discharge circuit and method therefor |
US7755871B2 (en) * | 2007-11-28 | 2010-07-13 | Amazing Microelectronic Corp. | Power-rail ESD protection circuit with ultra low gate leakage |
US7817387B2 (en) * | 2008-01-09 | 2010-10-19 | Freescale Semiconductor, Inc. | MIGFET circuit with ESD protection |
US7710696B2 (en) * | 2008-01-23 | 2010-05-04 | Himax Technologies Limited | Transient detection circuit for ESD protection |
TWI390699B (zh) * | 2008-01-31 | 2013-03-21 | Realtek Semiconductor Corp | 具有靜電保護功能之網路通訊裝置 |
JP5312849B2 (ja) * | 2008-06-06 | 2013-10-09 | ルネサスエレクトロニクス株式会社 | 集積回路 |
JP2010010419A (ja) * | 2008-06-27 | 2010-01-14 | Nec Electronics Corp | 半導体装置 |
US8536893B2 (en) * | 2009-03-09 | 2013-09-17 | Qualcomm Incorporated | Circuit for measuring magnitude of electrostatic discharge (ESD) events for semiconductor chip bonding |
EP2239793A1 (de) | 2009-04-11 | 2010-10-13 | Bayer MaterialScience AG | Elektrisch schaltbarer Polymerfilmaufbau und dessen Verwendung |
JP5431791B2 (ja) * | 2009-05-27 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | 静電気保護回路 |
US8947839B2 (en) * | 2009-07-30 | 2015-02-03 | Xilinx, Inc. | Enhanced immunity from electrostatic discharge |
CN101989739B (zh) * | 2009-08-06 | 2013-12-04 | 技嘉科技股份有限公司 | 保护电路 |
JP5557658B2 (ja) * | 2010-02-19 | 2014-07-23 | ラピスセミコンダクタ株式会社 | 保護回路及び半導体装置 |
US20110242712A1 (en) * | 2010-04-01 | 2011-10-06 | Fwu-Juh Huang | Chip with esd protection function |
US8456784B2 (en) | 2010-05-03 | 2013-06-04 | Freescale Semiconductor, Inc. | Overvoltage protection circuit for an integrated circuit |
CN101944530B (zh) * | 2010-08-27 | 2011-09-21 | 电子科技大学 | 一种用于集成电路的具有控制电路的esd保护电路 |
US9553254B2 (en) | 2011-03-01 | 2017-01-24 | Parker-Hannifin Corporation | Automated manufacturing processes for producing deformable polymer devices and films |
JP2014517331A (ja) | 2011-03-22 | 2014-07-17 | バイエル・インテレクチュアル・プロパティ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | 電場応答性高分子アクチュエータレンチキュラシステム |
JP2013073992A (ja) | 2011-09-27 | 2013-04-22 | Semiconductor Components Industries Llc | 半導体装置 |
US8982517B2 (en) * | 2012-02-02 | 2015-03-17 | Texas Instruments Incorporated | Electrostatic discharge protection apparatus |
WO2013142552A1 (en) | 2012-03-21 | 2013-09-26 | Bayer Materialscience Ag | Roll-to-roll manufacturing processes for producing self-healing electroactive polymer devices |
JP5985851B2 (ja) * | 2012-03-27 | 2016-09-06 | 旭化成エレクトロニクス株式会社 | Esd保護回路及びesd保護回路に係る半導体装置 |
CN102693979B (zh) * | 2012-06-11 | 2017-02-08 | 上海华虹宏力半导体制造有限公司 | 全芯片esd保护电路 |
KR20150031285A (ko) | 2012-06-18 | 2015-03-23 | 바이엘 인텔렉쳐 프로퍼티 게엠베하 | 연신 공정을 위한 연신 프레임 |
WO2014066576A1 (en) | 2012-10-24 | 2014-05-01 | Bayer Intellectual Property Gmbh | Polymer diode |
US9438030B2 (en) | 2012-11-20 | 2016-09-06 | Freescale Semiconductor, Inc. | Trigger circuit and method for improved transient immunity |
US9064938B2 (en) * | 2013-05-30 | 2015-06-23 | Freescale Semiconductor, Inc. | I/O cell ESD system |
US9472948B2 (en) * | 2013-09-30 | 2016-10-18 | Infineon Technologies Ag | On chip reverse polarity protection compliant with ISO and ESD requirements |
US9225163B2 (en) * | 2013-11-01 | 2015-12-29 | Infineon Technologies Ag | Combined ESD active clamp for cascaded voltage pins |
TWI504090B (zh) | 2013-11-06 | 2015-10-11 | Realtek Semiconductor Corp | 靜電放電防護電路 |
US9876450B2 (en) * | 2014-01-24 | 2018-01-23 | Marvell World Trade, Ltd. | Active clamp for motor driver |
JP6143690B2 (ja) | 2014-03-12 | 2017-06-07 | 株式会社東芝 | 出力回路 |
US9337651B2 (en) * | 2014-04-23 | 2016-05-10 | Via Alliance Semiconductor Co., Ltd. | Electrostatic discharge protection circuit |
US9478529B2 (en) * | 2014-05-28 | 2016-10-25 | Freescale Semiconductor, Inc. | Electrostatic discharge protection system |
US9553446B2 (en) | 2014-10-31 | 2017-01-24 | Nxp Usa, Inc. | Shared ESD circuitry |
TWI572106B (zh) | 2015-03-26 | 2017-02-21 | 瑞昱半導體股份有限公司 | 電流鏡式靜電放電箝制電路與電流鏡式靜電放電偵測器 |
CN107408533B (zh) * | 2015-06-19 | 2022-02-08 | 瑞萨电子株式会社 | 半导体器件 |
DE102015120692B3 (de) * | 2015-11-27 | 2017-05-24 | Elmos Semiconductor Aktiengesellschaft | Vorrichtung zum Schutz von integrierten Schaltungen mittels Schutzbussen |
DE102015120691B3 (de) * | 2015-11-27 | 2017-05-11 | Elmos Semiconductor Aktiengesellschaft | Vorrichtung zum Schutz von integrierten Schaltungen mittels Schutzbussen |
DE102015120695B3 (de) * | 2015-11-27 | 2017-06-01 | Elmos Semiconductor Aktiengesellschaft | Vorrichtung zum Schutz von integrierten Schaltungen mittels Schutzbussen |
DE102015120694B3 (de) * | 2015-11-27 | 2017-06-01 | Elmos Semiconductor Aktiengesellschaft | Vorrichtung zum Schutz von integrierten Schaltungen mittels Schutzbussen |
DE102015120697B3 (de) * | 2015-11-27 | 2017-06-01 | Elmos Semiconductor Aktiengesellschaft | Vorrichtung zum Schutz von integrierten Schaltungen mittels Schutzbussen |
DE102015120698B3 (de) * | 2015-11-27 | 2017-05-24 | Elmos Semiconductor Aktiengesellschaft | Vorrichtung zum Schutz von integrierten Schaltungen mittels Schutzbussen |
DE102015120693B3 (de) * | 2015-11-27 | 2017-05-24 | Elmos Semiconductor Aktiengesellschaft | Vorrichtung zum Schutz von integrierten Schaltungen mittels Schutzbussen |
TWI604676B (zh) | 2016-10-05 | 2017-11-01 | 瑞昱半導體股份有限公司 | 跨電源域的靜電放電防護電路 |
TWI604677B (zh) | 2016-10-05 | 2017-11-01 | 瑞昱半導體股份有限公司 | 跨電源域的靜電放電防護電路 |
US10528111B2 (en) | 2017-12-11 | 2020-01-07 | Micron Technology, Inc. | Apparatuses and methods for indicating an operation type associated with a power management event |
CN108519541A (zh) * | 2018-04-23 | 2018-09-11 | 珠海深圳清华大学研究院创新中心 | 一种检测电路及检测设备 |
CN108880212B (zh) | 2018-06-30 | 2021-07-20 | 唯捷创芯(天津)电子技术股份有限公司 | 一种防浪涌的电源钳位电路、芯片及通信终端 |
US11056879B2 (en) | 2019-06-12 | 2021-07-06 | Nxp Usa, Inc. | Snapback clamps for ESD protection with voltage limited, centralized triggering scheme |
CN113839374B (zh) * | 2021-11-29 | 2022-03-04 | 珠海市杰理科技股份有限公司 | Esd电源保护电路、工作电源和芯片 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4295176A (en) | 1979-09-04 | 1981-10-13 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit protection arrangement |
EP0435047A3 (en) * | 1989-12-19 | 1992-07-15 | National Semiconductor Corporation | Electrostatic discharge protection for integrated circuits |
JPH06164350A (ja) * | 1992-09-18 | 1994-06-10 | Fuji Electric Co Ltd | 半導体集積回路装置 |
US5361185A (en) | 1993-02-19 | 1994-11-01 | Advanced Micro Devices, Inc. | Distributed VCC/VSS ESD clamp structure |
US5311391A (en) | 1993-05-04 | 1994-05-10 | Hewlett-Packard Company | Electrostatic discharge protection circuit with dynamic triggering |
US5561577A (en) | 1994-02-02 | 1996-10-01 | Hewlett-Packard Company | ESD protection for IC's |
US5610790A (en) * | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
JP2830783B2 (ja) | 1995-07-18 | 1998-12-02 | 日本電気株式会社 | 半導体装置 |
US5721656A (en) | 1996-06-10 | 1998-02-24 | Winbond Electronics Corporation | Electrostatc discharge protection network |
US5825600A (en) * | 1997-04-25 | 1998-10-20 | Cypress Semiconductor Corp. | Fast turn-on silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection |
US5991134A (en) | 1997-06-19 | 1999-11-23 | Advanced Micro Devices, Inc. | Switchable ESD protective shunting circuit for semiconductor devices |
JPH1187727A (ja) * | 1997-09-12 | 1999-03-30 | Mitsubishi Electric Corp | 半導体装置 |
US6002156A (en) * | 1997-09-16 | 1999-12-14 | Winbond Electronics Corp. | Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering |
US5946177A (en) | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
-
2000
- 2000-04-10 US US09/546,601 patent/US6385021B1/en not_active Expired - Lifetime
-
2001
- 2001-04-04 KR KR1020027013590A patent/KR100801863B1/ko active IP Right Grant
- 2001-04-04 EP EP01924673A patent/EP1277236B1/en not_active Expired - Lifetime
- 2001-04-04 AU AU2001251308A patent/AU2001251308A1/en not_active Abandoned
- 2001-04-04 JP JP2001574904A patent/JP5162070B2/ja not_active Expired - Lifetime
- 2001-04-04 CN CNB018078737A patent/CN1242478C/zh not_active Expired - Lifetime
- 2001-04-04 WO PCT/US2001/010976 patent/WO2001078148A1/en active Application Filing
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100937652B1 (ko) * | 2002-12-31 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 반도체 장치의 정전기방전 보호회로 |
US7280329B2 (en) | 2003-08-27 | 2007-10-09 | Samsung Electronics Co., Ltd. | Integrated circuit device having input/output electrostatic discharge protection cell equipped with electrostatic discharge protection element and power clamp |
US7763941B2 (en) | 2003-08-27 | 2010-07-27 | Samsung Electronics Co., Ltd. | Integrated circuit device having input/output electrostatic discharge protection cell equipped with electrostatic discharge protection element and power clamp |
Also Published As
Publication number | Publication date |
---|---|
WO2001078148A1 (en) | 2001-10-18 |
KR100801863B1 (ko) | 2008-02-12 |
CN1426601A (zh) | 2003-06-25 |
AU2001251308A1 (en) | 2001-10-23 |
US6385021B1 (en) | 2002-05-07 |
JP2003530698A (ja) | 2003-10-14 |
CN1242478C (zh) | 2006-02-15 |
EP1277236B1 (en) | 2012-01-18 |
EP1277236A1 (en) | 2003-01-22 |
JP5162070B2 (ja) | 2013-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100801863B1 (ko) | 정전 방전 보호 회로 | |
JP4322806B2 (ja) | 静電気放電保護回路及び動作方法 | |
US6147538A (en) | CMOS triggered NMOS ESD protection circuit | |
TWI413227B (zh) | 靜電放電保護電路及其操作方法 | |
US7400480B2 (en) | Electrostatic discharge protection circuit | |
US7782583B2 (en) | Electrostatic discharge protection device having low junction capacitance and operational voltage | |
US7589945B2 (en) | Distributed electrostatic discharge protection circuit with varying clamp size | |
US20030076636A1 (en) | On-chip ESD protection circuit with a substrate-triggered SCR device | |
US6239958B1 (en) | Electrostatic damage protection circuit and dynamic random access memory | |
JP2008538259A (ja) | 静電放電保護回路 | |
US20060268477A1 (en) | Apparatus for ESD protection | |
US6529035B2 (en) | Arrangement for improving the ESD protection in a CMOS buffer | |
US7242558B2 (en) | ESD protection module triggered by BJT punch-through | |
US20180083440A1 (en) | Integrated circuit electrostatic discharge protection with disable-enable | |
US8194372B1 (en) | Systems and methods for electrostatic discharge protection | |
US10749336B2 (en) | ESD protection circuit with passive trigger voltage controlled shut-off | |
CN101533830B (zh) | 高压垫的静电放电保护装置 | |
JP3464340B2 (ja) | 半導体集積回路装置 | |
US20090059451A1 (en) | Esd protection circuit with improved coupling capacitor | |
JP4031423B2 (ja) | 半導体集積回路 | |
US20020030954A1 (en) | Layout for efficient ESD design of substrate triggered ESD protection circuits | |
KR20230029658A (ko) | 향상된 esd(electrostatic discharge) 강건성을 위한 회로 기법들 | |
JP2839624B2 (ja) | 半導体集積回路 | |
US8891215B2 (en) | High noise immunity with latch-up free ESD clamp | |
US20020053934A1 (en) | Electrostatic discharge protection device for an integrated transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130110 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20140109 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20150109 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160113 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20170102 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20180110 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20190102 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20200102 Year of fee payment: 13 |