KR20020042462A - 조명 광학 장치, 해당 조명 광학 장치를 구비한 노광장치, 마이크로디바이스의 제조 방법 및 노광 방법 - Google Patents
조명 광학 장치, 해당 조명 광학 장치를 구비한 노광장치, 마이크로디바이스의 제조 방법 및 노광 방법 Download PDFInfo
- Publication number
- KR20020042462A KR20020042462A KR1020010074517A KR20010074517A KR20020042462A KR 20020042462 A KR20020042462 A KR 20020042462A KR 1020010074517 A KR1020010074517 A KR 1020010074517A KR 20010074517 A KR20010074517 A KR 20010074517A KR 20020042462 A KR20020042462 A KR 20020042462A
- Authority
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- South Korea
- Prior art keywords
- illumination
- optical
- optical system
- mask
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006073 displacement reaction Methods 0.000 claims description 49
- 210000001747 pupil Anatomy 0.000 claims description 44
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- 230000004048 modification Effects 0.000 claims description 16
- 238000012986 modification Methods 0.000 claims description 16
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- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 8
- 230000000295 complement effect Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 32
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- 238000010586 diagram Methods 0.000 description 17
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- 239000004065 semiconductor Substances 0.000 description 8
- 230000002349 favourable effect Effects 0.000 description 6
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- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70183—Zoom systems for adjusting beam diameter
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
- Optical Elements Other Than Lenses (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2000-00363225 | 2000-11-29 | ||
| JP2000363225 | 2000-11-29 | ||
| JPJP-P-2001-00074240 | 2001-03-15 | ||
| JP2001074240A JP2002231619A (ja) | 2000-11-29 | 2001-03-15 | 照明光学装置および該照明光学装置を備えた露光装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020042462A true KR20020042462A (ko) | 2002-06-05 |
Family
ID=26604841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020010074517A Withdrawn KR20020042462A (ko) | 2000-11-29 | 2001-11-28 | 조명 광학 장치, 해당 조명 광학 장치를 구비한 노광장치, 마이크로디바이스의 제조 방법 및 노광 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20020085276A1 (enExample) |
| EP (1) | EP1211561A3 (enExample) |
| JP (1) | JP2002231619A (enExample) |
| KR (1) | KR20020042462A (enExample) |
| SG (1) | SG114513A1 (enExample) |
| TW (1) | TW516097B (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101020455B1 (ko) * | 2003-10-28 | 2011-03-08 | 가부시키가이샤 니콘 | 조명 광학계, 투영 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US8339578B2 (en) | 2004-01-27 | 2012-12-25 | Nikon Corporation | Optical system, exposure system, and exposure method |
| US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
| US8675177B2 (en) | 2003-04-09 | 2014-03-18 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas |
| US9164209B2 (en) | 2003-11-20 | 2015-10-20 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction |
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| TW554411B (en) * | 2001-08-23 | 2003-09-21 | Nikon Corp | Exposure apparatus |
| DE10144243A1 (de) * | 2001-09-05 | 2003-03-20 | Zeiss Carl | Zoom-System für eine Beleuchtungseinrichtung |
| US7079321B2 (en) * | 2001-10-18 | 2006-07-18 | Asml Holding N.V. | Illumination system and method allowing for varying of both field height and pupil |
| US6813003B2 (en) * | 2002-06-11 | 2004-11-02 | Mark Oskotsky | Advanced illumination system for use in microlithography |
| US7006295B2 (en) * | 2001-10-18 | 2006-02-28 | Asml Holding N.V. | Illumination system and method for efficiently illuminating a pattern generator |
| TW567406B (en) | 2001-12-12 | 2003-12-21 | Nikon Corp | Diffraction optical device, refraction optical device, illuminating optical device, exposure system and exposure method |
| JP4207478B2 (ja) * | 2002-07-12 | 2009-01-14 | 株式会社ニコン | オプティカルインテグレータ、照明光学装置、露光装置および露光方法 |
| JP4332331B2 (ja) * | 2002-08-05 | 2009-09-16 | キヤノン株式会社 | 露光方法 |
| DE10322393A1 (de) * | 2003-05-12 | 2004-12-02 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage |
| JPWO2004112107A1 (ja) * | 2003-06-16 | 2006-07-27 | 株式会社ニコン | 照明光学装置、露光装置および露光方法 |
| JP2005032847A (ja) * | 2003-07-09 | 2005-02-03 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化装置、結晶化方法およびデバイス |
| JP4717813B2 (ja) * | 2003-09-12 | 2011-07-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光設備のための照明系 |
| JPWO2005062350A1 (ja) * | 2003-12-19 | 2008-04-17 | 株式会社ニコン | 光束変換素子、露光装置、照明光学系及び露光方法 |
| EP1716457B9 (en) | 2004-01-16 | 2012-04-04 | Carl Zeiss SMT GmbH | Projection system with a polarization-modulating element having a variable thickness profile |
| US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
| US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
| WO2005076083A1 (en) * | 2004-02-07 | 2005-08-18 | Carl Zeiss Smt Ag | Illumination system for a microlithographic projection exposure apparatus |
| JP4497949B2 (ja) * | 2004-02-12 | 2010-07-07 | キヤノン株式会社 | 露光装置 |
| US7276328B1 (en) * | 2004-03-02 | 2007-10-02 | Advanced Micro Devices, Inc. | Lithography mask utilizing asymmetric light source |
| US20050225740A1 (en) * | 2004-03-31 | 2005-10-13 | Padlyar Sushil D | Light source for photolithography |
| DE102004035595B4 (de) * | 2004-04-09 | 2008-02-07 | Carl Zeiss Smt Ag | Verfahren zur Justage eines Projektionsobjektives |
| US7324280B2 (en) | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
| US7400381B2 (en) * | 2004-05-26 | 2008-07-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7116400B2 (en) * | 2004-06-02 | 2006-10-03 | Asml Netherlands B.V. | Illumination assembly, method for providing a radiation beam, lithographic projection apparatus and device manufacturing method |
| JP4769448B2 (ja) * | 2004-10-08 | 2011-09-07 | キヤノン株式会社 | 干渉計を備えた露光装置及びデバイス製造方法 |
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- 2001-03-15 JP JP2001074240A patent/JP2002231619A/ja active Pending
- 2001-08-23 TW TW090120743A patent/TW516097B/zh active
- 2001-11-28 SG SG200107340A patent/SG114513A1/en unknown
- 2001-11-28 KR KR1020010074517A patent/KR20020042462A/ko not_active Withdrawn
- 2001-11-28 US US09/994,861 patent/US20020085276A1/en not_active Abandoned
- 2001-11-29 EP EP01128550A patent/EP1211561A3/en not_active Withdrawn
-
2004
- 2004-05-13 US US10/844,353 patent/US20040263817A1/en not_active Abandoned
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Also Published As
| Publication number | Publication date |
|---|---|
| TW516097B (en) | 2003-01-01 |
| US20020085276A1 (en) | 2002-07-04 |
| JP2002231619A (ja) | 2002-08-16 |
| SG114513A1 (en) | 2005-09-28 |
| EP1211561A3 (en) | 2005-01-26 |
| EP1211561A2 (en) | 2002-06-05 |
| US20040263817A1 (en) | 2004-12-30 |
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