KR20010099722A - 수지 봉지 칩 적층형 반도체 장치 - Google Patents

수지 봉지 칩 적층형 반도체 장치 Download PDF

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Publication number
KR20010099722A
KR20010099722A KR1020010021691A KR20010021691A KR20010099722A KR 20010099722 A KR20010099722 A KR 20010099722A KR 1020010021691 A KR1020010021691 A KR 1020010021691A KR 20010021691 A KR20010021691 A KR 20010021691A KR 20010099722 A KR20010099722 A KR 20010099722A
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KR
South Korea
Prior art keywords
chip
resin
semiconductor device
type semiconductor
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020010021691A
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English (en)
Korean (ko)
Inventor
콘도타카시
반도코지
시바타준
나루타키카즈코
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR20010099722A publication Critical patent/KR20010099722A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06575—Auxiliary carrier between devices, the carrier having no electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
KR1020010021691A 2000-04-26 2001-04-23 수지 봉지 칩 적층형 반도체 장치 Ceased KR20010099722A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-125579 2000-04-26
JP2000125579A JP2001308262A (ja) 2000-04-26 2000-04-26 樹脂封止ｂｇａ型半導体装置

Publications (1)

Publication Number Publication Date
KR20010099722A true KR20010099722A (ko) 2001-11-09

Family

ID=18635508

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010021691A Ceased KR20010099722A (ko) 2000-04-26 2001-04-23 수지 봉지 칩 적층형 반도체 장치

Country Status (3)

Country Link
US (1) US6545365B2 (enExample)
JP (1) JP2001308262A (enExample)
KR (1) KR20010099722A (enExample)

Cited By (6)

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KR20020010367A (ko) * 2000-07-29 2002-02-04 마이클 디. 오브라이언 멀티칩 모듈 및 그 제조 방법
KR100461220B1 (ko) * 2001-01-24 2004-12-10 샤프 가부시키가이샤 반도체 장치 및 그의 제조방법
US7235887B2 (en) 2003-08-22 2007-06-26 Samsung Electronics Co., Ltd. Semiconductor package with improved chip attachment and manufacturing method thereof
KR100796884B1 (ko) * 2005-03-28 2008-01-22 가부시끼가이샤 도시바 적층형 반도체 장치의 제조 방법 및 적층형 전자 부품의제조 방법
KR100947146B1 (ko) * 2007-04-27 2010-03-12 가부시끼가이샤 도시바 반도체 패키지
US10707187B2 (en) 2015-11-06 2020-07-07 Lg Chem, Ltd. Semiconductor device and method for manufacturing semiconductor device

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KR100401020B1 (ko) 2001-03-09 2003-10-08 앰코 테크놀로지 코리아 주식회사 반도체칩의 스택킹 구조 및 이를 이용한 반도체패키지
JP4633971B2 (ja) * 2001-07-11 2011-02-16 ルネサスエレクトロニクス株式会社 半導体装置
US20030038356A1 (en) * 2001-08-24 2003-02-27 Derderian James M Semiconductor devices including stacking spacers thereon, assemblies including the semiconductor devices, and methods
US7518223B2 (en) * 2001-08-24 2009-04-14 Micron Technology, Inc. Semiconductor devices and semiconductor device assemblies including a nonconfluent spacer layer
DE10142120A1 (de) * 2001-08-30 2003-03-27 Infineon Technologies Ag Elektronisches Bauteil mit wenigstens zwei gestapelten Halbleiterchips sowie Verfahren zu seiner Herstellung
US20030042615A1 (en) * 2001-08-30 2003-03-06 Tongbi Jiang Stacked microelectronic devices and methods of fabricating same
JP3688249B2 (ja) 2002-04-05 2005-08-24 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6700206B2 (en) * 2002-08-02 2004-03-02 Micron Technology, Inc. Stacked semiconductor package and method producing same
KR100472286B1 (ko) * 2002-09-13 2005-03-10 삼성전자주식회사 접착 테이프가 본딩와이어에 부착된 반도체 칩 패키지
US7064426B2 (en) * 2002-09-17 2006-06-20 Chippac, Inc. Semiconductor multi-package module having wire bond interconnect between stacked packages
US6972481B2 (en) * 2002-09-17 2005-12-06 Chippac, Inc. Semiconductor multi-package module including stacked-die package and having wire bond interconnect between stacked packages
US20040061213A1 (en) * 2002-09-17 2004-04-01 Chippac, Inc. Semiconductor multi-package module having package stacked over die-up flip chip ball grid array package and having wire bond interconnect between stacked packages
US7205647B2 (en) * 2002-09-17 2007-04-17 Chippac, Inc. Semiconductor multi-package module having package stacked over ball grid array package and having wire bond interconnect between stacked packages
US7053476B2 (en) * 2002-09-17 2006-05-30 Chippac, Inc. Semiconductor multi-package module having package stacked over die-down flip chip ball grid array package and having wire bond interconnect between stacked packages
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KR20050074961A (ko) * 2002-10-08 2005-07-19 치팩, 인코포레이티드 역전된 제 2 패키지를 구비한 반도체 적층형 멀티-패키지모듈
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JP2004221555A (ja) * 2002-12-27 2004-08-05 Sumitomo Bakelite Co Ltd フィルム付き半導体素子、半導体装置およびそれらの製造方法
JP3819851B2 (ja) * 2003-01-29 2006-09-13 松下電器産業株式会社 半導体装置およびその製造方法
JP4620366B2 (ja) * 2003-02-27 2011-01-26 住友ベークライト株式会社 半導体装置、半導体素子の製造方法、および半導体装置の製造方法
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JP4434778B2 (ja) 2004-02-25 2010-03-17 Ｎｅｃエレクトロニクス株式会社 半導体装置
WO2005103180A1 (ja) 2004-04-20 2005-11-03 Hitachi Chemical Co., Ltd. 接着シート、半導体装置、及び半導体装置の製造方法
JP4816871B2 (ja) * 2004-04-20 2011-11-16 日立化成工業株式会社 接着シート、半導体装置、及び半導体装置の製造方法
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JP4976284B2 (ja) * 2005-03-30 2012-07-18 新日鐵化学株式会社 半導体装置の製造方法及び半導体装置
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JP2023121355A (ja) * 2022-02-21 2023-08-31 キオクシア株式会社 半導体装置および半導体装置の製造方法

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KR20020010367A (ko) * 2000-07-29 2002-02-04 마이클 디. 오브라이언 멀티칩 모듈 및 그 제조 방법
KR100461220B1 (ko) * 2001-01-24 2004-12-10 샤프 가부시키가이샤 반도체 장치 및 그의 제조방법
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KR100947146B1 (ko) * 2007-04-27 2010-03-12 가부시끼가이샤 도시바 반도체 패키지
US10707187B2 (en) 2015-11-06 2020-07-07 Lg Chem, Ltd. Semiconductor device and method for manufacturing semiconductor device
US10991678B2 (en) 2015-11-06 2021-04-27 Lg Chem, Ltd. Semiconductor device and method for manufacturing semiconductor device

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