KR20000076913A - 반도체 집적회로 디바이스 제조 방법 - Google Patents

반도체 집적회로 디바이스 제조 방법 Download PDF

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Publication number
KR20000076913A
KR20000076913A KR1020000013857A KR20000013857A KR20000076913A KR 20000076913 A KR20000076913 A KR 20000076913A KR 1020000013857 A KR1020000013857 A KR 1020000013857A KR 20000013857 A KR20000013857 A KR 20000013857A KR 20000076913 A KR20000076913 A KR 20000076913A
Authority
KR
South Korea
Prior art keywords
barrier layer
metal film
conductive barrier
chemical mechanical
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020000013857A
Other languages
English (en)
Korean (ko)
Inventor
이마이도시노리
오하시나오후미
홈마요시오
고우도세이이찌
Original Assignee
가나이 쓰토무
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 쓰토무, 가부시키가이샤 히타치세이사쿠쇼 filed Critical 가나이 쓰토무
Publication of KR20000076913A publication Critical patent/KR20000076913A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
KR1020000013857A 1999-04-28 2000-03-18 반도체 집적회로 디바이스 제조 방법 Abandoned KR20000076913A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11123061A JP2000315666A (ja) 1999-04-28 1999-04-28 半導体集積回路装置の製造方法
JP1999-123061 1999-04-28

Publications (1)

Publication Number Publication Date
KR20000076913A true KR20000076913A (ko) 2000-12-26

Family

ID=14851242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000013857A Abandoned KR20000076913A (ko) 1999-04-28 2000-03-18 반도체 집적회로 디바이스 제조 방법

Country Status (4)

Country Link
US (1) US6509273B1 (https=)
JP (1) JP2000315666A (https=)
KR (1) KR20000076913A (https=)
TW (1) TW517296B (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4554011B2 (ja) 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4505891B2 (ja) * 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
JP3805588B2 (ja) * 1999-12-27 2006-08-02 株式会社日立製作所 半導体装置の製造方法
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
JP4810728B2 (ja) * 2000-12-04 2011-11-09 株式会社ニコン 研磨状況モニタ方法及びその装置、研磨装置、並びに半導体デバイス製造方法
JP4713767B2 (ja) * 2001-05-30 2011-06-29 株式会社東芝 洗浄液および半導体装置の製造方法
JP2002367996A (ja) * 2001-06-06 2002-12-20 Nec Corp 半導体装置の製造方法
JP4803625B2 (ja) * 2001-09-04 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2003077921A (ja) 2001-09-04 2003-03-14 Nec Corp 半導体装置の製造方法
SG115405A1 (en) * 2001-09-17 2005-10-28 Inst Of Microelectronics Method for reducing dishing in chemical mechanical polishing
US6638326B2 (en) * 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US7121926B2 (en) * 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
KR100444307B1 (ko) * 2001-12-28 2004-08-16 주식회사 하이닉스반도체 반도체소자의 금속배선 콘택플러그 형성방법
JP4063619B2 (ja) * 2002-03-13 2008-03-19 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP4050631B2 (ja) * 2003-02-21 2008-02-20 株式会社ルネサステクノロジ 電子デバイスの製造方法
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US20040266185A1 (en) * 2003-06-30 2004-12-30 Texas Instruments Incorporated Method for reducing integrated circuit defects
US6936534B2 (en) * 2003-09-17 2005-08-30 Micron Technology, Inc. Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallization
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
JP2008010835A (ja) * 2006-05-31 2008-01-17 Sumitomo Electric Ind Ltd 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法
CN101081485A (zh) * 2006-05-31 2007-12-05 住友电气工业株式会社 表面处理方法、氮化物晶体衬底、半导体器件和制造方法
JP5151133B2 (ja) * 2006-12-11 2013-02-27 富士通株式会社 配線形成方法
JP4730358B2 (ja) * 2007-09-03 2011-07-20 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
JP2010219406A (ja) * 2009-03-18 2010-09-30 Tokyo Electron Ltd 化学的機械研磨方法
CN102402635B (zh) * 2010-09-19 2014-03-05 复旦大学 一种针对耦合电容影响的化学机械抛光工艺哑元金属填充方法
JP2014027012A (ja) * 2012-07-24 2014-02-06 Toshiba Corp 半導体装置の製造方法および半導体装置の製造装置
CN106415145B (zh) 2014-04-11 2019-08-06 特灵国际有限公司 Hvac系统和控制

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JPH0794455A (ja) 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd 配線の形成方法
JP3556978B2 (ja) 1993-12-14 2004-08-25 株式会社東芝 銅系金属の研磨方法
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JPH0864594A (ja) 1994-08-18 1996-03-08 Sumitomo Metal Ind Ltd 配線の形成方法
JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
JP3160545B2 (ja) 1997-01-28 2001-04-25 松下電器産業株式会社 埋め込み配線の形成方法
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6153043A (en) 1998-02-06 2000-11-28 International Business Machines Corporation Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing
US6261157B1 (en) * 1999-05-25 2001-07-17 Applied Materials, Inc. Selective damascene chemical mechanical polishing

Also Published As

Publication number Publication date
TW517296B (en) 2003-01-11
US6509273B1 (en) 2003-01-21
JP2000315666A (ja) 2000-11-14

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