KR102866964B1 - 네거티브형 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 - Google Patents

네거티브형 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스

Info

Publication number
KR102866964B1
KR102866964B1 KR1020237032232A KR20237032232A KR102866964B1 KR 102866964 B1 KR102866964 B1 KR 102866964B1 KR 1020237032232 A KR1020237032232 A KR 1020237032232A KR 20237032232 A KR20237032232 A KR 20237032232A KR 102866964 B1 KR102866964 B1 KR 102866964B1
Authority
KR
South Korea
Prior art keywords
group
formula
compound
resin composition
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237032232A
Other languages
English (en)
Korean (ko)
Other versions
KR20230148224A (ko
Inventor
쿄헤이 사키타
켄타 야마자키
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20230148224A publication Critical patent/KR20230148224A/ko
Application granted granted Critical
Publication of KR102866964B1 publication Critical patent/KR102866964B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1025—Preparatory processes from tetracarboxylic acids or derivatives and diamines polymerised by radiations
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Materials For Photolithography (AREA)
KR1020237032232A 2021-03-22 2022-03-18 네거티브형 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 Active KR102866964B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-046917 2021-03-22
JP2021046917 2021-03-22
PCT/JP2022/012523 WO2022202647A1 (ja) 2021-03-22 2022-03-18 ネガ型感光性樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス

Publications (2)

Publication Number Publication Date
KR20230148224A KR20230148224A (ko) 2023-10-24
KR102866964B1 true KR102866964B1 (ko) 2025-10-01

Family

ID=83395794

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237032232A Active KR102866964B1 (ko) 2021-03-22 2022-03-18 네거티브형 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스

Country Status (6)

Country Link
EP (1) EP4317287A4 (https=)
JP (1) JPWO2022202647A1 (https=)
KR (1) KR102866964B1 (https=)
CN (1) CN117099045A (https=)
TW (1) TW202248755A (https=)
WO (1) WO2022202647A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20260015248A (ko) * 2023-07-28 2026-02-02 후지필름 가부시키가이샤 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
WO2025134897A1 (ja) * 2023-12-18 2025-06-26 株式会社レゾナック 感光性樹脂組成物、硬化物及び半導体素子
WO2025159143A1 (ja) * 2024-01-25 2025-07-31 富士フイルム株式会社 感光性樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
WO2026070903A1 (ja) * 2024-09-30 2026-04-02 富士フイルム株式会社 感光性樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006251009A (ja) * 2005-03-08 2006-09-21 Chisso Corp 感光性組成物およびそれを用いた表示素子
JP2009258634A (ja) 2008-03-25 2009-11-05 Toray Ind Inc ポジ型感光性樹脂組成物
JP2017122742A (ja) 2014-05-09 2017-07-13 日立化成株式会社 ポジ型感光性接着剤組成物、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置
JP2017198977A (ja) 2016-04-14 2017-11-02 旭化成株式会社 感光性樹脂組成物及び硬化レリーフパターンの製造方法
JP2018054937A (ja) 2016-09-29 2018-04-05 東レ株式会社 感光性樹脂組成物
JP2018111773A (ja) 2017-01-12 2018-07-19 東レ株式会社 樹脂組成物
WO2021039841A1 (ja) * 2019-08-27 2021-03-04 富士フイルム株式会社 硬化膜の製造方法、光硬化性樹脂組成物、積層体の製造方法、及び、半導体デバイスの製造方法
WO2021039782A1 (ja) * 2019-08-26 2021-03-04 富士フイルム株式会社 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス、樹脂、及び、樹脂の製造方法

Family Cites Families (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK125218B (da) 1967-11-09 1973-01-15 Kalle Ag Lysfølsomt optegnelsesmateriale og lysfølsom blanding til anvendelse ved fremstilling af materialet.
DE2033769B2 (de) 1969-07-11 1980-02-21 Ppg Industries, Inc., Pittsburgh, Pa. (V.St.A.) Bis-<2-acryloxyäthyl)hexahydrophthalat enthaltende Gemische und Herstellungsverfahren
JPS4841708B1 (https=) 1970-01-13 1973-12-07
JPS506034B1 (https=) 1970-08-11 1975-03-10
DE2064079C2 (de) 1970-12-28 1982-09-09 Hoechst Ag, 6000 Frankfurt Photopolymerisierbares Gemisch
JPS5324989B2 (https=) 1971-12-09 1978-07-24
JPS5230490B2 (https=) 1972-03-21 1977-08-09
DE2361041C3 (de) 1973-12-07 1980-08-14 Hoechst Ag, 6000 Frankfurt Photopolymerisierbares Gemisch
JPS5311314B2 (https=) 1974-09-25 1978-04-20
DE2822189A1 (de) 1978-05-20 1980-04-17 Hoechst Ag Photopolymerisierbares gemisch
DE2822190A1 (de) 1978-05-20 1979-11-22 Hoechst Ag Photopolymerisierbares gemisch
DE2952697A1 (de) 1979-12-29 1981-07-02 Hoechst Ag, 6230 Frankfurt Durch strahlung polymerisierbares gemisch und damit hergestelltes strahlungsempfindliches kopiermaterial
DE2952698A1 (de) 1979-12-29 1981-07-02 Hoechst Ag, 6230 Frankfurt Photopolymerisierbares gemisch und damit hergestelltes photopolymerisierbares kopiermaterial
DE3036694A1 (de) 1980-09-29 1982-06-03 Hoechst Ag, 6000 Frankfurt Gummielastische, ethylenisch ungesaettigte polyurethane und dieselben enthaltendes durch strahlung polymerisierbares gemisch
DE3048502A1 (de) 1980-12-22 1982-07-22 Hoechst Ag, 6000 Frankfurt Durch strahlung polymerisierbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3421511A1 (de) 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Polymerisierbare, perfluoralkylgruppen aufweisende verbindungen, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
DE3710282A1 (de) 1987-03-28 1988-10-13 Hoechst Ag Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial
DE3710279A1 (de) 1987-03-28 1988-10-06 Hoechst Ag Polymerisierbare verbindungen und diese enthaltendes durch strahlung polymerisierbares gemisch
DE3710281A1 (de) 1987-03-28 1988-10-06 Hoechst Ag Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial
DE3817424A1 (de) 1988-05-21 1989-11-23 Hoechst Ag Alkenylphosphon- und -phosphinsaeureester, verfahren zu ihrer herstellung und durch strahlung polymerisierbares gemisch, das diese verbindungen enthaelt
JPH04253058A (ja) 1991-01-29 1992-09-08 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
US5296330A (en) 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
JP2761822B2 (ja) 1992-02-12 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2761823B2 (ja) 1992-04-27 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH06130664A (ja) 1992-10-22 1994-05-13 Sumitomo Bakelite Co Ltd ネガ型感光性樹脂組成物
JPH1062986A (ja) 1996-08-21 1998-03-06 Fuji Photo Film Co Ltd 感放射線性着色組成物
TW452575B (en) 1996-12-06 2001-09-01 Ciba Sc Holding Ag New Α-aminoacetophenone photoinitiators and photopolymerizable compositions comprising these photoinitiators
US6441487B2 (en) 1997-10-20 2002-08-27 Flip Chip Technologies, L.L.C. Chip scale package using large ductile solder balls
SG77689A1 (en) 1998-06-26 2001-01-16 Ciba Sc Holding Ag New o-acyloxime photoinitiators
JP2000070025A (ja) 1998-09-01 2000-03-07 Seigo Nakamura 傘
NL1016815C2 (nl) 1999-12-15 2002-05-14 Ciba Sc Holding Ag Oximester-fotoinitiatoren.
EP1395615B1 (en) 2001-06-11 2009-10-21 Basf Se Oxime ester photoinitiators having a combined structure
ES2324983T3 (es) 2001-08-21 2009-08-21 Ciba Holding Inc. Oxidos y sulfuros de mono- y bis- acilfosfina batocromicos y su utilizacion como fotoiniciadores.
JP4153756B2 (ja) 2002-08-30 2008-09-24 欣吾 内田 フォトクロミック材料
JP4174275B2 (ja) 2002-09-09 2008-10-29 住友ベークライト株式会社 感光性有機無機複合材料およびそれを用いた半導体装置
JP3972246B2 (ja) 2003-01-07 2007-09-05 ソニー株式会社 ウエハーレベル・チップサイズ・パッケージおよびその製造方法
JP4286558B2 (ja) 2003-02-26 2009-07-01 広島県 マンノシルエリスリトールリピッドの製造方法
JP4502784B2 (ja) 2004-06-07 2010-07-14 富士フイルム株式会社 カラーフィルター、カラーフィルターの製造方法、及び液晶表示装置
JP4841816B2 (ja) 2004-08-03 2011-12-21 富士フイルム株式会社 遮光膜付基板、及び該遮光膜付基板を用いたエレクトロルミネッセンス表示装置
JP4428337B2 (ja) 2005-12-02 2010-03-10 ソニー株式会社 半導体装置の製造方法
KR100655045B1 (ko) 2005-12-30 2006-12-06 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 블랙 매트릭스
JP5354863B2 (ja) 2006-02-24 2013-11-27 富士フイルム株式会社 オキシム誘導体、光重合性組成物、カラーフィルタおよびその製造方法
JP2008063554A (ja) 2006-08-11 2008-03-21 Fujifilm Corp 分解性樹脂組成物、パターン形成材料およびパターン形成方法
KR101474900B1 (ko) 2006-09-27 2014-12-19 후지필름 가부시키가이샤 화합물 또는 이것의 토토머, 금속착체 화합물, 착색 감광성경화 조성물, 컬러필터, 및 제조
US8269358B2 (en) 2006-10-24 2012-09-18 Sumitomo Bakelite Company Limited Bis(aminophenol) derivative, process for producing same, polyamide resin, positive photosensitive resin composition, protective film, interlayer dielectric film, semiconductor device, and display element
JP4223071B2 (ja) 2006-12-27 2009-02-12 株式会社Ａｄｅｋａ オキシムエステル化合物及び該化合物を含有する光重合開始剤
JP2008250074A (ja) 2007-03-30 2008-10-16 Fujifilm Corp 感光性樹脂組成物、感光性フィルム、感光性積層体、永久パターン形成方法、及びプリント基板
JP5535065B2 (ja) 2007-05-11 2014-07-02 ビーエーエスエフ ソシエタス・ヨーロピア オキシムエステル光重合開始剤
JP5496482B2 (ja) 2007-08-27 2014-05-21 富士フイルム株式会社 新規化合物、光重合性組成物、カラーフィルタ用光重合性組成物、カラーフィルタ、及びその製造方法、固体撮像素子、並びに、平版印刷版原版
JP2009191179A (ja) 2008-02-15 2009-08-27 Toyo Ink Mfg Co Ltd 光重合開始剤、重合性組成物、および重合物の製造方法。
JP4911116B2 (ja) 2008-05-22 2012-04-04 日立化成デュポンマイクロシステムズ株式会社 半導体装置及びその製造方法、感光性樹脂組成物並びに電子部品
CN102112497B (zh) 2008-06-06 2013-04-10 巴斯夫欧洲公司 光引发剂混合物
US7888181B2 (en) 2008-09-22 2011-02-15 Stats Chippac, Ltd. Method of forming a wafer level package with RDL interconnection over encapsulant between bump and semiconductor die
JP5293120B2 (ja) 2008-11-28 2013-09-18 住友化学株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP2010164965A (ja) 2008-12-19 2010-07-29 Mitsubishi Chemicals Corp カラーフィルタ画素形成用組成物、カラーフィルタ、液晶表示装置及び有機ｅｌディスプレイ
JP5618118B2 (ja) 2009-01-09 2014-11-05 日立化成株式会社 感光性樹脂組成物，並びにこれを用いた感光性エレメント，ソルダーレジスト及びプリント配線板
JP2015127817A (ja) 2009-04-14 2015-07-09 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物及びこれを用いた回路形成用基板
JP2010262028A (ja) 2009-04-30 2010-11-18 Nippon Steel Chem Co Ltd ブラックマトリックス用感光性樹脂組成物
JP5571990B2 (ja) 2009-06-04 2014-08-13 旭化成イーマテリアルズ株式会社 ネガ型感光性樹脂組成物、硬化レリーフパターン形成・製造方法、並びに半導体装置
KR101678028B1 (ko) 2009-06-17 2016-11-21 토요잉크Sc홀딩스주식회사 옥심에스테르 화합물, 라디칼 중합개시제, 중합성 조성물, 네가티브형 레지스트 및 화상 패턴
JP5251829B2 (ja) 2009-10-26 2013-07-31 東レ株式会社 ポリエステル樹脂組成物、その製造方法、およびフィルム
TWI605063B (zh) 2009-11-25 2017-11-11 住友化學股份有限公司 Resin composition and display device
JP5577688B2 (ja) 2009-12-17 2014-08-27 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、それを用いた硬化膜及び電子部品
JP4735778B1 (ja) 2009-12-28 2011-07-27 東レ株式会社 ポジ型感光性樹脂組成物
JP2012003225A (ja) 2010-01-27 2012-01-05 Fujifilm Corp ソルダーレジスト用重合性組成物及びソルダーレジストパターンの形成方法
US9177926B2 (en) 2011-12-30 2015-11-03 Deca Technologies Inc Semiconductor device and method comprising thickened redistribution layers
CN102770465B (zh) 2010-03-22 2015-04-22 汉高美国知识产权有限责任公司 大分子光引发剂及其可固化组合物
JP2012014052A (ja) 2010-07-02 2012-01-19 Fujifilm Corp 着色感光性樹脂組成物、カラーフィルタ、カラーフィルタの製造方法、及び液晶表示装置
TWI430024B (zh) 2010-08-05 2014-03-11 旭化成電子材料股份有限公司 A photosensitive resin composition, a method for manufacturing a hardened bump pattern, and a semiconductor device
WO2012045736A1 (en) 2010-10-05 2012-04-12 Basf Se Oxime ester derivatives of benzocarbazole compounds and their use as photoinitiators in photopolymerizable compositions
JP2013015701A (ja) 2011-07-05 2013-01-24 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
JP5831092B2 (ja) 2011-09-27 2015-12-09 東レ株式会社 ポジ型感光性樹脂組成物
JP2013114249A (ja) 2011-12-01 2013-06-10 Toppan Printing Co Ltd 黒色感光性樹脂組成物およびカラーフィルタ
US9365515B2 (en) 2011-12-07 2016-06-14 Basf Se Oxime ester photoinitiators
JP5772642B2 (ja) 2012-02-09 2015-09-02 Jsr株式会社 硬化性樹脂組成物、表示素子用硬化膜、表示素子用硬化膜の形成方法及び表示素子
KR101968462B1 (ko) 2012-05-09 2019-04-11 바스프 에스이 옥심 에스테르 광개시제
EP2881450B1 (en) 2012-07-31 2020-09-09 Adeka Corporation Latent additive and composition containing latent additive
JP2014041264A (ja) 2012-08-22 2014-03-06 Sumitomo Bakelite Co Ltd 感光性樹脂組成物、硬化膜、保護膜、絶縁膜、およびそれを用いた半導体装置、表示体装置
JP6245180B2 (ja) 2012-12-21 2017-12-13 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物
JP6170673B2 (ja) 2012-12-27 2017-07-26 富士フイルム株式会社 カラーフィルタ用組成物、赤外線透過フィルタ及びその製造方法、並びに赤外線センサー
JP6065596B2 (ja) 2013-01-16 2017-01-25 Jsr株式会社 感放射線性着色組成物、着色硬化膜及び表示素子
JP6062876B2 (ja) 2013-02-28 2017-01-18 富士フイルム株式会社 透明樹脂層形成用組成物、透明樹脂層、固体撮像素子およびオプトエレクトロニクスデバイス
JP6048257B2 (ja) 2013-03-25 2016-12-21 東レ株式会社 耐熱性樹脂及びその前駆体組成物
JP6225445B2 (ja) 2013-03-26 2017-11-08 東レ株式会社 ドライエッチング用フォトレジスト、それを用いたレリーフパターンおよび発光素子の製造方法
JP2014191252A (ja) 2013-03-28 2014-10-06 Sumitomo Bakelite Co Ltd 感光性樹脂組成物、硬化膜、保護膜、半導体装置および表示体装置
JP6469669B2 (ja) 2013-07-08 2019-02-13 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ オキシムエステル光開始剤
JP6530410B2 (ja) 2013-09-10 2019-06-12 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ オキシムエステル光開始剤
US9159547B2 (en) 2013-09-17 2015-10-13 Deca Technologies Inc. Two step method of rapid curing a semiconductor polymer layer
JP6167018B2 (ja) 2013-10-31 2017-07-19 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
JP6198058B2 (ja) 2013-12-19 2017-09-20 Dic株式会社 界面活性剤組成物、コーティング組成物及びレジスト組成物
JP5898172B2 (ja) 2013-12-27 2016-04-06 コダマ樹脂工業株式会社 耐薬品性吹込み成形積層容器
JP6583258B2 (ja) 2014-02-19 2019-10-02 日立化成デュポンマイクロシステムズ株式会社 樹脂組成物、それによって形成される硬化膜及びパターン硬化膜、及びそれらの製造方法
CN103819583B (zh) 2014-03-18 2016-05-18 常州强力电子新材料股份有限公司 一种含硝基双肟酯类光引发剂及其制备方法和应用
JP6166682B2 (ja) 2014-03-26 2017-07-19 富士フイルム株式会社 着色組成物、硬化膜、カラーフィルタ、パターン形成方法、カラーフィルタの製造方法、固体撮像素子、および、画像表示装置
JP6167089B2 (ja) 2014-03-27 2017-07-19 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の製造方法および半導体デバイス
JP6595983B2 (ja) 2014-04-04 2019-10-23 株式会社Ａｄｅｋａ オキシムエステル化合物及び該化合物を含有する光重合開始剤
TWI671343B (zh) 2014-06-27 2019-09-11 Fujifilm Corporation 熱硬化性樹脂組成物、硬化膜、硬化膜的製造方法以及半導體裝置
CN104076606B (zh) 2014-07-15 2019-12-03 常州强力电子新材料股份有限公司 一种含肟酯类光引发剂的感光性组合物及其应用
JP6449445B2 (ja) 2014-09-04 2019-01-09 アイ ジー エム マルタ リミテッド 多環式光開始剤
JP2017008219A (ja) 2015-06-23 2017-01-12 株式会社Adeka 組成物
WO2017030005A1 (ja) 2015-08-17 2017-02-23 株式会社Adeka 組成物
WO2017033680A1 (ja) 2015-08-26 2017-03-02 パナソニックヘルスケアホールディングス株式会社 超低温フリーザ
WO2017038598A1 (ja) 2015-08-28 2017-03-09 富士フイルム株式会社 硬化膜の製造方法、再配線層用層間絶縁膜の製造方法、および、半導体デバイスの製造方法
JP6750249B2 (ja) 2016-02-26 2020-09-02 東洋インキＳｃホールディングス株式会社 感光性着色組成物およびカラーフィルタ
JP6762739B2 (ja) 2016-03-17 2020-09-30 株式会社Ｄｎｐファインケミカル カラーフィルタ用感光性着色樹脂組成物、カラーフィルタ、表示装置
JP7006267B2 (ja) 2016-03-25 2022-01-24 東レ株式会社 着色樹脂組成物、カラーフィルタ基板、および液晶表示装置
JP6860978B2 (ja) 2016-04-27 2021-04-21 東京応化工業株式会社 感光性組成物
KR102212731B1 (ko) 2016-08-25 2021-02-08 후지필름 가부시키가이샤 적층체의 제조 방법 및 전자 디바이스의 제조 방법
KR102341494B1 (ko) * 2016-11-02 2021-12-23 도레이 카부시키가이샤 수지 조성물, 수지 시트, 경화막, 유기 el 표시 장치, 반도체 전자 부품, 반도체 장치 및 유기 el 표시 장치의 제조 방법
WO2018110179A1 (ja) 2016-12-13 2018-06-21 日油株式会社 ペルオキシシンナメート誘導体、該化合物を含有する重合性組成物
JP7069557B2 (ja) 2017-03-31 2022-05-18 Ｈｄマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜、及び電子部品
WO2018221177A1 (ja) 2017-06-01 2018-12-06 日油株式会社 トリアジンペルオキシド誘導体、該化合物を含有する重合性組成物
JP6923130B2 (ja) 2017-08-31 2021-08-18 学校法人東京理科大学 ペルオキシエステル基を有するベンゾフェノン誘導体、該化合物を含有する重合性組成物およびその硬化物、当該硬化物の製造方法
JP6995309B2 (ja) 2017-08-31 2022-01-14 学校法人東京理科大学 ペルオキシエステル基を有するチオキサントン誘導体を含有する重合性組成物およびその硬化物、当該硬化物の製造方法
JPWO2019088055A1 (ja) 2017-10-30 2020-12-10 株式会社Adeka 化合物、組成物、硬化物及び硬化物の製造方法
JP6970922B2 (ja) 2018-03-26 2021-11-24 日油株式会社 ペルオキシシンナメート誘導体、該化合物を含有する重合性組成物およびその硬化物、並びに当該硬化物の製造方法
JP7351637B2 (ja) 2018-05-29 2023-09-27 旭化成株式会社 樹脂組成物、及び硬化膜の製造方法
EP3859447B1 (en) 2018-09-28 2025-11-19 FUJIFILM Corporation Photosensitive resin composition, cured film, laminate, method for producing cured film, and semiconductor device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006251009A (ja) * 2005-03-08 2006-09-21 Chisso Corp 感光性組成物およびそれを用いた表示素子
JP2009258634A (ja) 2008-03-25 2009-11-05 Toray Ind Inc ポジ型感光性樹脂組成物
JP2017122742A (ja) 2014-05-09 2017-07-13 日立化成株式会社 ポジ型感光性接着剤組成物、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置
JP2017198977A (ja) 2016-04-14 2017-11-02 旭化成株式会社 感光性樹脂組成物及び硬化レリーフパターンの製造方法
JP2018054937A (ja) 2016-09-29 2018-04-05 東レ株式会社 感光性樹脂組成物
JP2018111773A (ja) 2017-01-12 2018-07-19 東レ株式会社 樹脂組成物
WO2021039782A1 (ja) * 2019-08-26 2021-03-04 富士フイルム株式会社 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス、樹脂、及び、樹脂の製造方法
WO2021039841A1 (ja) * 2019-08-27 2021-03-04 富士フイルム株式会社 硬化膜の製造方法、光硬化性樹脂組成物、積層体の製造方法、及び、半導体デバイスの製造方法

Also Published As

Publication number Publication date
EP4317287A4 (en) 2024-09-18
KR20230148224A (ko) 2023-10-24
CN117099045A (zh) 2023-11-21
EP4317287A1 (en) 2024-02-07
WO2022202647A1 (ja) 2022-09-29
JPWO2022202647A1 (https=) 2022-09-29
TW202248755A (zh) 2022-12-16

Similar Documents

Publication Publication Date Title
JP7825572B2 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス
KR102866964B1 (ko) 네거티브형 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102864324B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 폴리이미드 전구체 및 그 제조 방법
KR102729553B1 (ko) 패턴 형성 방법, 광경화성 수지 조성물, 적층체의 제조 방법, 및, 전자 디바이스의 제조 방법
JP7259141B1 (ja) 硬化物の製造方法、積層体の製造方法、及び、半導体デバイスの製造方法、並びに、処理液
KR102864321B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 폴리이미드 전구체
JP2023034723A (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス、並びに、化合物
KR102836963B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
WO2022224838A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、半導体デバイス、及び、樹脂
WO2023032820A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス、並びに、化合物
WO2022070730A1 (ja) 硬化物の製造方法、積層体の製造方法、及び、半導体デバイスの製造方法
KR20220052342A (ko) 패턴 형성 방법, 감광성 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
WO2022145356A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス
KR102877409B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법, 및, 처리액, 및, 수지 조성물
KR102840315B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 화합물
WO2024070963A1 (ja) 膜の製造方法、感光性樹脂組成物、硬化物の製造方法、硬化物、及び積層体
JP2023124872A (ja) 硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、樹脂組成物、硬化物、積層体、及び、半導体デバイス
KR102875352B1 (ko) 영구막의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
WO2023032821A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
WO2023026892A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス、並びに、塩基発生剤
KR102937633B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 화합물
KR102860304B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 염기 발생제
JP7809077B2 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス、並びに、塩基発生剤
WO2023286571A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
WO2022050041A1 (ja) 硬化物の製造方法、積層体の製造方法、及び、電子デバイスの製造方法

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)