KR102466056B1 - 반도체 장치의 제조 방법 및 반도체 제조 장치 - Google Patents
반도체 장치의 제조 방법 및 반도체 제조 장치 Download PDFInfo
- Publication number
- KR102466056B1 KR102466056B1 KR1020170121612A KR20170121612A KR102466056B1 KR 102466056 B1 KR102466056 B1 KR 102466056B1 KR 1020170121612 A KR1020170121612 A KR 1020170121612A KR 20170121612 A KR20170121612 A KR 20170121612A KR 102466056 B1 KR102466056 B1 KR 102466056B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor wafer
- adhesive
- grinding
- semiconductor
- trimming
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 256
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000000853 adhesive Substances 0.000 claims abstract description 188
- 238000000227 grinding Methods 0.000 claims abstract description 155
- 230000001070 adhesive effect Effects 0.000 claims abstract description 144
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000009966 trimming Methods 0.000 claims abstract description 48
- 230000002093 peripheral effect Effects 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 83
- 238000005498 polishing Methods 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 200
- 238000010586 diagram Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003014 reinforcing effect Effects 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- -1 vitrified bonds Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/008—Machines comprising two or more tools or having several working posts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
- B24B55/08—Dust extraction equipment on grinding or polishing machines specially designed for belt grinding machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2016-185300 | 2016-09-23 | ||
JP2016185300A JP6850099B2 (ja) | 2016-09-23 | 2016-09-23 | 半導体装置の製造方法及び半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180033088A KR20180033088A (ko) | 2018-04-02 |
KR102466056B1 true KR102466056B1 (ko) | 2022-11-10 |
Family
ID=61752408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170121612A KR102466056B1 (ko) | 2016-09-23 | 2017-09-21 | 반도체 장치의 제조 방법 및 반도체 제조 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6850099B2 (zh) |
KR (1) | KR102466056B1 (zh) |
CN (1) | CN107866724A (zh) |
TW (1) | TWI746645B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10388535B1 (en) * | 2018-05-25 | 2019-08-20 | Powertech Technology Inc. | Wafer processing method with full edge trimming |
CN108857601A (zh) * | 2018-07-25 | 2018-11-23 | 浙江工业大学 | 钴基合金的光催化加工方法及其设备 |
JP7258489B2 (ja) * | 2018-08-21 | 2023-04-17 | 株式会社岡本工作機械製作所 | 半導体装置の製造方法及び製造装置 |
JP7270373B2 (ja) * | 2018-12-20 | 2023-05-10 | 株式会社岡本工作機械製作所 | 樹脂を含む複合基板の研削方法及び研削装置 |
KR102455146B1 (ko) * | 2020-02-10 | 2022-10-17 | 주식회사 나노인 | 기판의 구조충진을 위한 가역적 코팅 방법 및 봉지 방법 |
TW202209548A (zh) * | 2020-08-27 | 2022-03-01 | 日商富士軟片股份有限公司 | 經加工的基材的製造方法、半導體元件的製造方法、及暫時黏合劑層形成用組成物 |
CN115302345B (zh) * | 2022-08-30 | 2024-03-15 | 福建融玻科技有限公司 | 一种防眩光玻璃显示屏薄板划痕修复平磨抛光机 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012074545A (ja) * | 2010-09-29 | 2012-04-12 | Okamoto Machine Tool Works Ltd | 保護フィルム貼付半導体基板の裏面研削方法 |
JP2015032679A (ja) * | 2013-08-02 | 2015-02-16 | 株式会社岡本工作機械製作所 | 半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109679A (ja) * | 1991-10-15 | 1993-04-30 | Nec Corp | 半導体装置の製造方法 |
JP2004207459A (ja) * | 2002-12-25 | 2004-07-22 | Disco Abrasive Syst Ltd | 半導体ウェーハの研削方法 |
JP2004311767A (ja) * | 2003-04-08 | 2004-11-04 | Disco Abrasive Syst Ltd | 半導体ウェーハの製造方法 |
JP2005116610A (ja) * | 2003-10-03 | 2005-04-28 | Nitto Denko Corp | 半導体ウエハの加工方法および半導体ウエハ加工用粘着シート |
JP4447280B2 (ja) * | 2003-10-16 | 2010-04-07 | リンテック株式会社 | 表面保護用シートおよび半導体ウエハの研削方法 |
JP4752384B2 (ja) * | 2005-08-02 | 2011-08-17 | 株式会社東京精密 | ウェーハ外周研削方法及びウェーハ外周研削装置 |
WO2009104614A1 (ja) * | 2008-02-22 | 2009-08-27 | 日本ミクロコーティング株式会社 | 半導体ウェーハ外周端部の研削方法及び研削装置 |
JP2010023119A (ja) * | 2008-07-15 | 2010-02-04 | Okamoto Machine Tool Works Ltd | 半導体基板の平坦化装置および平坦化方法 |
JP2013008915A (ja) * | 2011-06-27 | 2013-01-10 | Toshiba Corp | 基板加工方法及び基板加工装置 |
JP2013084770A (ja) * | 2011-10-11 | 2013-05-09 | Disco Abrasive Syst Ltd | ウェーハの研削方法 |
JP5959188B2 (ja) * | 2011-12-05 | 2016-08-02 | 株式会社ディスコ | ウエーハの加工方法 |
JP2013247135A (ja) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP6057592B2 (ja) * | 2012-08-06 | 2017-01-11 | 株式会社ディスコ | ウエーハの加工方法 |
JP2014053351A (ja) * | 2012-09-05 | 2014-03-20 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
-
2016
- 2016-09-23 JP JP2016185300A patent/JP6850099B2/ja active Active
-
2017
- 2017-09-21 KR KR1020170121612A patent/KR102466056B1/ko active IP Right Grant
- 2017-09-22 CN CN201710865633.2A patent/CN107866724A/zh active Pending
- 2017-09-22 TW TW106132672A patent/TWI746645B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012074545A (ja) * | 2010-09-29 | 2012-04-12 | Okamoto Machine Tool Works Ltd | 保護フィルム貼付半導体基板の裏面研削方法 |
JP2015032679A (ja) * | 2013-08-02 | 2015-02-16 | 株式会社岡本工作機械製作所 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107866724A (zh) | 2018-04-03 |
TW201814847A (zh) | 2018-04-16 |
JP2018049973A (ja) | 2018-03-29 |
TWI746645B (zh) | 2021-11-21 |
KR20180033088A (ko) | 2018-04-02 |
JP6850099B2 (ja) | 2021-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102466056B1 (ko) | 반도체 장치의 제조 방법 및 반도체 제조 장치 | |
KR102541126B1 (ko) | 정전 흡착 척, 그 제조 방법 및 반도체 장치의 제조 방법 | |
JP5671510B2 (ja) | 半導体デバイス基板の研削方法 | |
TWI767022B (zh) | 基板處理方法及基板處理系統 | |
KR102013386B1 (ko) | 역도금 패드 컨디셔너 제조방법 및 패드 컨디셔너 | |
JP2003257907A (ja) | 半導体素子の製造方法および半導体素子 | |
TW201936315A (zh) | 晶圓的製造方法 | |
JP5498857B2 (ja) | ウェーハの加工方法 | |
JP2013012654A (ja) | 被加工物の研削方法 | |
JP3924641B2 (ja) | 半導体ウェーハの製造方法 | |
JP2012204545A (ja) | 半導体装置の製造方法および製造装置 | |
JP6307753B2 (ja) | 半導体基板の平坦化加工方法 | |
JP2015216281A5 (zh) | ||
JP6999322B2 (ja) | ウエーハの研削方法 | |
JP2011103379A (ja) | ウェーハの平坦化加工方法 | |
JP6796978B2 (ja) | 半導体装置の製造方法 | |
US20160288291A1 (en) | Method for grinding wafers by shaping resilient chuck covering | |
JP6541476B2 (ja) | ウェーハの研磨方法 | |
US20140057531A1 (en) | Method for grinding wafers by shaping resilient chuck covering | |
JP2006324498A (ja) | 使い捨て研磨パッドプレート | |
JPH1158232A (ja) | ドレッシング工具及びその製造方法 | |
JP7187113B2 (ja) | 再生ウェーハの製造方法 | |
JP7166728B2 (ja) | 被加工物の加工方法 | |
WO2001096065A1 (fr) | Procede de polissage de pieces | |
JP2014053357A (ja) | ウエーハの加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |