WO2001096065A1 - Procede de polissage de pieces - Google Patents

Procede de polissage de pieces Download PDF

Info

Publication number
WO2001096065A1
WO2001096065A1 PCT/JP2001/004838 JP0104838W WO0196065A1 WO 2001096065 A1 WO2001096065 A1 WO 2001096065A1 JP 0104838 W JP0104838 W JP 0104838W WO 0196065 A1 WO0196065 A1 WO 0196065A1
Authority
WO
WIPO (PCT)
Prior art keywords
work
wafer
polishing
coat film
peripheral
Prior art date
Application number
PCT/JP2001/004838
Other languages
English (en)
Japanese (ja)
Inventor
Hisashi Masumura
Shunichi Ikeda
Koji Kitagawa
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Publication of WO2001096065A1 publication Critical patent/WO2001096065A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces

Definitions

  • the present invention relates to a method for polishing a work, and more particularly, to a polishing technique for a circular work requiring a high flatness such as a semiconductor wafer.
  • a holding plate 16 attached to a holder 11 which is rotating itself is used.
  • the work W is held by vacuum suction, etc., and the abrasive 15 is supplied onto the polishing cloth 13 attached to the rotatable surface plate 12 from the abrasive supply device 14. Then, the surface (working surface) of the work W is slid against the rotating polishing cloth 13 while applying a load to the polishing cloth 13, whereby the surface is polished.
  • a packing pad is provided on the holding surface of a holding plate made of metal or the like to fix the work, or a method for holding the work W
  • a method for holding the work W For example, there is a method of attaching a mark to a holding plate such as a glass or a glass via an adhesive pad or the like.
  • a semiconductor wafer is made into a mirror wafer by polishing as described above, but when a circuit is formed on the surface of the mirror wafer to produce a semiconductor wafer, one wafer is manufactured. Therefore, it is desirable to obtain as many devices as possible, and for that purpose, the wafer must be as flat as possible over the entire surface, especially near the outer edge. . More specifically, under the current standard, it is only necessary that high flattening be performed in a region excluding a certain region (for example, an outer periphery of 3 mm) from the outer peripheral end of the wafer. High flatness in the area up to 2 mm and even 1 mm ⁇ Ehas are being requested.
  • FIG. 4 schematically shows a cross section around the wafer after polishing.
  • the peripheral portion of the wafer 21 is excessively polished as compared with the central portion, and a peripheral sag 24 is formed in a peripheral portion near the chamfered portion 23 on the polished surface 22 side.
  • This peripheral sag 24 often occurs in a region within about 5 mm from the outer peripheral edge force of the evaporator irrespective of the diameter of the antenna.
  • Peripheral sag is more abrasive at the periphery than at the center of the ewa, due to various factors, such as the periphery being exposed to newer abrasives than the center of the eha.
  • One of the causes is local pressure generated around the wafer during polishing.
  • Most of the polishing cloth used for polishing semiconductors and wafers is made of a viscoelastic material such as artificial leather or nonwoven fabric. When polishing a wafer with a load, the polishing cloth sinks. As a result, local pressure is generated in the periphery of the wafer, and the periphery is overpolished, flatness is impaired, and peripheral dripping occurs.
  • a method has also been proposed in which the polishing cloth is hardened to suppress sinking and thereby suppress overpolishing of the peripheral portion.
  • the use of a hard polishing cloth causes mechanical damage to the work surface (surface to be polished). May cause.
  • An object of the present invention is to provide a polishing method for suppressing peripheral sagging when polishing a circular work requiring extremely precise flatness.
  • a method of polishing by holding a back surface of a circular work with a work holding plate and sliding a surface of the work on a polishing cloth. Forming a back coat film on the back surface of the work that is thinner at the periphery than at the center of the work or exposed at the periphery at the periphery, and through the back coat film.
  • a work polishing method characterized in that the work back surface is polished while the back surface of the work is held by a holding plate.
  • a back coat film is formed so that the back of the work is exposed at a thinner portion or at the periphery than at the center of the work, and the work is formed through the back coat film.
  • the back coat film of the work is thinned in a region within 5 mm from the outer peripheral end portion of the work or that the back surface of the work is exposed. .
  • the peripheral sag easily occurs in a region within 5 mm from the outer peripheral edge of the wafer. As a result, if the thickness of the back coat film is changed in that region, the peripheral region can be polished. Sagging can be effectively prevented.
  • the back coat film is formed by forming a uniform coat film on the entire back surface of the work, and then thinning or removing the peripheral portion of the coat film. More specifically, a uniform coating film is formed on the entire back surface of the work by spin coating, and the peripheral portion of the coating film is reduced in thickness. Or, remove the surrounding area while rotating the work This can be achieved by supplying a solvent that dissolves the coating film to the part.
  • the back coat film By forming the back coat film in this way, a desired back coat film can be easily formed, and the back surface of the work is held through the back coat film. Grinding by holding the board makes it possible to reliably prevent the peripheral sagging.
  • the thickness of the work is thinner at the periphery than at the center of the work. Is used to form a back coat film with the back of the work exposed at the periphery, and to polish the work surface by holding the back of the work with a holding plate via the back coat film. As a result, overpolishing of the peripheral portion of the work can be suppressed.
  • FIG. 1 is a schematic diagram showing a state in which a wafer on which a back coat film according to the present invention is formed is held.
  • FIG. 2 is a schematic explanatory view showing a part of a step of forming a back coat film according to the present invention.
  • FIG. 3 is a schematic side view showing one example of a wafer single-side polishing apparatus.
  • FIG. 4 is a view showing a portion around the wafer after polishing by a conventional method.
  • FIG. 3 is a schematic side view showing one example of a wafer single-side polishing apparatus.
  • FIG. 4 is a view showing a portion around the wafer after polishing by a conventional method.
  • FIG. 5 is a graph showing the amount of displacement of the thickness of the peripheral portion of ENO measured after polishing in the example and the comparative example.
  • the polishing method according to the present invention can be applied to the polishing of a circular work of a thin plate requiring a high flatness, but a preferable example will be described for polishing a semiconductor wafer.
  • the raw materials such as silicon are melted by the Chiral key method (CZ method) and the floating zone melting method (FZ method).
  • the semiconductor ingot grown from the liquid is sliced into a wafer.
  • etching is performed to remove processing strain and the like on the wafer surface. In some cases, surface grinding is performed instead of wrapping.
  • the wafer subjected to such a process is subjected to surface polishing in order to make the surface flatter and more mirror-finished.
  • the back surface of the wafer before polishing is placed on the center of the wafer.
  • a thinner coat is formed on the periphery or a back coat film with the back of the wafer exposed at the periphery is formed, and the back of the wafer is held by a holding plate via the back coat film to hold the back of the wafer. Perform polishing.
  • the conventional method involves direct contact of the entire back of the wafer with the holding surface of the holding plate.
  • the wafer is held and polished, but in the present invention, before the wafer is held by such a holding plate, the center of the wafer is placed on the rear surface of the wafer.
  • a back coat film made of resin or the like with the back of the wafer exposed at the periphery is thinner at the periphery or at the periphery.
  • the material of the back coat film it has an appropriate hardness, has a resistance to the abrasive component, aluminum alloy, and has good adhesiveness to the wafer, and is further polished.
  • the material is not particularly limited as long as it can be easily removed thereafter, and a photo resist or other synthetic resin is used.
  • a photo resist or other synthetic resin is used.
  • polyvinyl butyral (PVB) resin can be suitably used.
  • the method of forming the back coat film is not particularly limited, either. After forming a uniform coat film on the entire back surface of the wafer, the peripheral portion of the coat film is thinned or removed. By doing so, a back coat film having a desired shape can be easily formed.
  • a solution obtained by dissolving PVB resin in isopropyl alcohol (IPA) is applied to the back (holding surface) of the wafer by spin coating.
  • IPA isopropyl alcohol
  • FIG. 2 is a schematic explanatory view showing an example of a method of removing a peripheral portion of a coat film formed on the entire back surface of the wafer.
  • the wafer W having the coating film 6 formed on the entire back surface by spin coating or the like is rotated so that the center of the wafer W is positioned on the rotating shaft 3 of the rotating table 2. Place on top.
  • a solvent 5 such as IPA is supplied to the periphery of the wafer through the solvent supply nozzle 4 to dissolve the periphery of the coat film 6.
  • the coating of the entire back surface by the spin coating and the thinning processing of the peripheral portion can be performed continuously.
  • the formation of the PVB resin film can be easily performed by spin coating, for example, when the concentration of the PVB resin in the IPA is about 0.2 to 5.0% by weight.
  • Abrasives can be applied by removing the surrounding area by IPA and then performing a heat treatment at a temperature of 50 ° C to 200 ° C for 30 seconds to 720 seconds. It is possible to form a PVB resin film having an excellent resistance to the component Al and a moderate hardness.
  • the method for forming the back coat film according to the present invention is not limited to the above example.
  • a resin is applied to the entire back surface of the wafer by spin coating or the like, and then dried. You may wipe off the resin from the surrounding area before cleaning.
  • a resin may be applied only to the central portion so that the rear surface of the wafer is exposed in the peripheral portion of the wafer, and the back coat film may be formed.
  • Other methods include immersing the periphery of the wafer in a solvent, rotating the wafer, and removing the back coat film only at the periphery, or filling the center of the back coat film with a film. There is a method such as removing the film after protecting it with a film and removing only the periphery.
  • the back coat film should be thinned within 10 mm, especially within 5 mm from the outer edge of the wafer, or formed by exposing the back of the wafer. Is preferred. As described above, in single-side polishing, the polishing pressure increases from about 5 mm in the peripheral portion regardless of the wafer diameter, and the peripheral sag tends to occur. Therefore, the back coat film is thinned within 1 O mm from the outer peripheral edge of the wafer, particularly within a region of 5 mni, or formed by exposing the back surface of the wafer.
  • the back coat film may be completely removed, particularly in the area of 5 mm or less around the wafer, or may be thinned to have a substantially uniform thickness in the periphery. Alternatively, the thickness may be gradually or gradually reduced from the 5 mm force at the periphery of the wafer to the edge of the wafer.
  • the thickness of the back coat film around the wafer especially at the outermost periphery and at the center of the wafer
  • the difference between the thickness and the thickness is at least when the back coat film is formed or polished after forming the back coat film with a uniform thickness in the wafer surface. It is preferable that the value be larger than the value of the peripheral sag. In particular, it is preferable that the difference in thickness be at least twice the value of the peripheral sag. However, even if the difference in thickness is too large, it is necessary to form the back coat film thickly, and when polishing, the periphery of the wafer is not sagged, but not sagged. It is preferable that the practical upper limit of the difference in thickness is about 5 times the value of the peripheral sag, since it may result in a rounded shape.
  • FIG. 1 shows a state where the wafer is held on a holding plate by the method according to the present invention.
  • the wafer W has the rear coating film 6 thinned.
  • the periphery of the wafer is suction-held on the holding plate 1 with a gap provided between the holding surface 1 and the holding surface 7 of the holding plate 1.
  • the wafer W held in this manner is polished by applying a load to the polishing cloth in the same manner as in the prior art, so that the wafer W
  • the polishing pressure is relatively smaller in the peripheral portion than in the central portion of the wafer or substantially uniform in the plane, and the local pressure received from the polishing cloth is reduced.
  • the sinking of the polishing cloth in the vicinity of the wafer is also reduced, so that the surrounding portion is not excessively polished, and it is possible to prevent the occurrence of sagging around the wafer.
  • the back coat film according to the present invention not only prevents the generation of peripheral sag as described above, but also serves as a protective film for preventing the back surface of the wafer from being stained by an abrasive or the like. Also works. ⁇ If the back of the wafer is held directly by the holding plate, abrasives and polishing gas generated during polishing may get into between the holding plate and the wafer, and the back of the wafer may be contaminated. However, by holding the wafer through the back coat film as in the present invention, it is possible to prevent the back surface from being contaminated by abrasives or the like. In particular, when a thin back coat film is formed at the periphery rather than at the center of the work, the above-mentioned coat film exists over the entire back surface of the wafer. It can completely prevent contamination by chemicals.
  • the coating film is removed from the entire back surface of the wafer, but the wafer is immersed in a solvent used for thinning or removing the back coating film on the peripheral portion, and the back film is removed.
  • a solvent used for thinning or removing the back coating film on the peripheral portion and the back film is removed.
  • the entire film may be removed.
  • IPA can be used in the case of a PVB resin film.
  • the membrane is washed with ozone-added water to decompose the coat film, and then a mixed solution of ammonia and aqueous hydrogen peroxide (so-called SC - 1 solution) and N a OHZH 2 0 be One by the and this treatment with Al force Li solution of 2 such as Ru is in this and mosquitoes easily removed.
  • the present invention is not applied only to such a holding method, for example, a packing pad.
  • a holding plate provided with a slot is used, and a circular workpiece can be polished.
  • adhesives, wax, etc. are applied to plates such as ceramics and glass.
  • polishing the wafer by pasting the wafer through the adhesive apply these adhesive mixes thinner at the periphery of the wafer than at the center of the wafer or expose the back of the wafer at the periphery. In this case, it may be applied to the back of the wafer and adhered to the plate.
  • the back coating film according to the present invention is an adhesive that is attached to the back of the wafer in order to attach the “ano” to such a ceramics glass plate or the like. It also contains agents and waxes.
  • the application method is not particularly limited.
  • the adhesive agent is uniformly applied to the entire back surface of the wafer by spin coating or the like.
  • the solvent can be supplied to the peripheral portion while rotating the peripheral portion, and the peripheral portion can be thinned or removed.
  • IPA or caustic soda water can be used, and the wax in the peripheral portion can be easily thinned or removed.
  • the thickness is reduced within a range of 1 Om m, particularly within 5 mm from the outer peripheral edge of the wafer, or that the back surface of the wafer is exposed.
  • the wafer polished by forming the back coat film according to the present invention is a mirror-finished wafer having excellent flatness over the entire surface of the wafer, in which generation of peripheral sag is suppressed. ⁇
  • the rate of non-defective products of eha can be significantly improved.
  • a circuit can be formed over the entire surface, and the productivity and yield of semiconductor devices can be significantly improved.
  • a back coat film having a desired shape is formed on the back surface of the work to suppress overpolishing
  • a general work holding plate conventionally used is used. This has the advantage that it can be used as is.
  • a spin coater is provided on the entire back surface (holding surface) of a silicon wafer (diameter: 200 mm, thickness: 735 / i in) obtained by slicing the ingot.
  • a PVB resin IPA solvent
  • An IPA solution was supplied to the peripheral area within 5 mm from the surrounding area as shown in Fig. 2 to form a thin film.
  • heat treatment was performed to form a back coat film having a thickness of 1.2 ⁇ at the central portion and a thickness of 0.2 ⁇ at the peripheral portion.
  • the wafer is sucked and held on the holding plate as shown in FIG. 1 through the back coat film thus formed, and the wafer is polished under the following polishing conditions.
  • the wafer is sucked and held on the holding plate as shown in FIG. 1 through the back coat film thus formed, and the wafer is polished under the following polishing conditions.
  • Polishing equipment Vacuum adsorption type Makiha polishing equipment
  • the wafer was treated with ozone-added water, and then the wafer was immersed in an IPA solution to remove the back coat film.
  • the wafer was adsorbed and held through the back coat film thus formed, and the primary polishing of the wafer was performed under the same polishing conditions as in the example.
  • the wafer polished in the comparative example had a thickness displacement of 0-1 in a range from 5 mm to 2 mm from the outer edge of the wafer. It is on the order of ⁇ m, and very high flatness is achieved over the entire surface of the wafer.
  • the object to be polished to which the present invention can be applied is not limited to the semiconductor wafer, and a high flatness of the entire surface is required. It can be applied to the polishing of circular workpieces.
  • the size of the work is not particularly limited.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un procédé pour polir la surface d'une pièce de type disque. Ce procédé consiste à faire glisser la surface de la pièce sur une garniture abrasive, tout en maintenant l'arrière de la pièce au moyen d'une plaque de maintien de pièce. Cette invention est caractérisée en ce qu'un film de revêtement de face arrière (6), qui présente une épaisseur sur la partie périphérique inférieure à celle sur la partie centrale de la pièce (W) ou qui est formé de façon que la partie périphérique de la face arrière de la pièce soit exposée, est produit sur la face arrière de la pièce. Selon cette invention, la surface de la pièce est polie, alors que sa face arrière est maintenue à l'aide d'une plaque de maintien de pièce (1), par l'intermédiaire du film de revêtement de face arrière. Ce procédé permet de supprimer le chantournage des bords, lors du polissage d'une telle pièce de type disque, qui nécessite une planéité très précise, tel qu'une plaquette de semi-conducteur.
PCT/JP2001/004838 2000-06-13 2001-06-08 Procede de polissage de pieces WO2001096065A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-177191 2000-06-13
JP2000177191 2000-06-13

Publications (1)

Publication Number Publication Date
WO2001096065A1 true WO2001096065A1 (fr) 2001-12-20

Family

ID=18678823

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/004838 WO2001096065A1 (fr) 2000-06-13 2001-06-08 Procede de polissage de pieces

Country Status (2)

Country Link
TW (1) TW490358B (fr)
WO (1) WO2001096065A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011077661A1 (fr) * 2009-12-24 2011-06-30 株式会社Sumco Plaquette à semi-conducteur, et son procede de production
WO2012147279A1 (fr) * 2011-04-26 2012-11-01 信越半導体株式会社 Plaquette à semi-conducteurs et son procédé de fabrication
US8952496B2 (en) 2009-12-24 2015-02-10 Sumco Corporation Semiconductor wafer and method of producing same
JP2020150109A (ja) * 2019-03-13 2020-09-17 信越半導体株式会社 半導体ウェーハの厚み測定方法及び半導体ウェーハの両面研磨装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023093983A (ja) * 2021-12-23 2023-07-05 グローバルウェーハズ・ジャパン株式会社 高抵抗シリコンウェーハの厚さ測定方法及び平坦度測定方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110435A (ja) * 1984-11-02 1986-05-28 Oki Electric Ind Co Ltd 半導体ウエハの平面研削法
JPS63134167A (ja) * 1986-11-25 1988-06-06 Toshiba Corp 半導体ウエハの研磨方法
JPH08257893A (ja) * 1995-03-29 1996-10-08 Mitsubishi Materials Corp ウェーハ研磨装置および研磨方法
JPH09272054A (ja) * 1996-04-04 1997-10-21 Hitachi Ltd 研磨装置のウエハ保持構造と半導体装置
US5866477A (en) * 1994-09-14 1999-02-02 Komatsu Electric Metals Co., Ltd. Method of polishing a chamfered portion of a semiconductor silicon substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110435A (ja) * 1984-11-02 1986-05-28 Oki Electric Ind Co Ltd 半導体ウエハの平面研削法
JPS63134167A (ja) * 1986-11-25 1988-06-06 Toshiba Corp 半導体ウエハの研磨方法
US5866477A (en) * 1994-09-14 1999-02-02 Komatsu Electric Metals Co., Ltd. Method of polishing a chamfered portion of a semiconductor silicon substrate
JPH08257893A (ja) * 1995-03-29 1996-10-08 Mitsubishi Materials Corp ウェーハ研磨装置および研磨方法
JPH09272054A (ja) * 1996-04-04 1997-10-21 Hitachi Ltd 研磨装置のウエハ保持構造と半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011077661A1 (fr) * 2009-12-24 2011-06-30 株式会社Sumco Plaquette à semi-conducteur, et son procede de production
JP2011134828A (ja) * 2009-12-24 2011-07-07 Sumco Corp 半導体ウェーハおよびその製造方法
US8772177B2 (en) 2009-12-24 2014-07-08 Sumco Corporation Semiconductor wafer and method of producing the same
US8952496B2 (en) 2009-12-24 2015-02-10 Sumco Corporation Semiconductor wafer and method of producing same
WO2012147279A1 (fr) * 2011-04-26 2012-11-01 信越半導体株式会社 Plaquette à semi-conducteurs et son procédé de fabrication
US9076750B2 (en) 2011-04-26 2015-07-07 Shin-Etsu Handotai Co., Ltd. Semiconductor wafer and manufacturing method thereof
JP2020150109A (ja) * 2019-03-13 2020-09-17 信越半導体株式会社 半導体ウェーハの厚み測定方法及び半導体ウェーハの両面研磨装置

Also Published As

Publication number Publication date
TW490358B (en) 2002-06-11

Similar Documents

Publication Publication Date Title
JP5455282B2 (ja) シリコン・オン・インシュレータ搬送ウエハのエッジ除去
JP5628224B2 (ja) 基板表面を研磨するための方法
JP3004891B2 (ja) 表面粗さを減少させるための半導体ウエハの粗研磨法
US9991110B2 (en) Method for manufacturing semiconductor wafer
US8377825B2 (en) Semiconductor wafer re-use using chemical mechanical polishing
TWI746645B (zh) 半導體裝置的製造方法和半導體製造裝置
WO2006028017A1 (fr) Procédé servant à produire une plaque de silicium
KR20000017512A (ko) 웨이퍼 기판 재생방법 및 웨이퍼 기판 재생을 위한 연마액 조성물
US6361407B1 (en) Method of polishing a semiconductor wafer
US8500516B2 (en) Method for polishing a semiconductor wafer
US6406357B1 (en) Grinding method, semiconductor device and method of manufacturing semiconductor device
WO2001096065A1 (fr) Procede de polissage de pieces
JP2002141311A (ja) ウェーハの研磨方法及びウェーハの洗浄方法
JP2002043257A (ja) ワークの研磨方法
JP2004022838A (ja) 貼り合わせｓｏｉ基板およびその製造方法
KR100883511B1 (ko) 반도체 웨이퍼 연마 방법 및 장치
KR100914605B1 (ko) 나노토포그라피가 개선된 웨이퍼 제조 방법
KR20230092807A (ko) 반도체 기판을 폴리싱하기 위한 방법
JP2000308961A (ja) 貼付プレートおよびその製法
JP2001257183A (ja) 半導体ウェーハの研磨方法
JP2020205400A (ja) ウェーハ薄型化方法
JP2000015571A (ja) 半導体ウェーハの研磨方法
JP2003039310A (ja) ウェーハの研磨方法及びウェーハ
JPH05200642A (ja) 半導体基板研磨機

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
ENP Entry into the national phase

Ref country code: JP

Ref document number: 2002 510232

Kind code of ref document: A

Format of ref document f/p: F

122 Ep: pct application non-entry in european phase