KR102391997B1 - 다결정성 세라믹 기판 및 그 제조 방법 - Google Patents

다결정성 세라믹 기판 및 그 제조 방법 Download PDF

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KR102391997B1
KR102391997B1 KR1020197002180A KR20197002180A KR102391997B1 KR 102391997 B1 KR102391997 B1 KR 102391997B1 KR 1020197002180 A KR1020197002180 A KR 1020197002180A KR 20197002180 A KR20197002180 A KR 20197002180A KR 102391997 B1 KR102391997 B1 KR 102391997B1
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layer
bonding layer
bonding
ceramic substrate
manufacturing
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KR20190020336A (ko
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블라디미르 오드노블류도브
셈 바세리
샤리 패런스
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큐로미스, 인크
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    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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  • Crystallography & Structural Chemistry (AREA)
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  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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KR1020197002180A 2016-06-24 2017-06-13 다결정성 세라믹 기판 및 그 제조 방법 Active KR102391997B1 (ko)

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KR1020227013772A KR102582390B1 (ko) 2016-06-24 2017-06-13 다결정성 세라믹 기판 및 그 제조 방법

Applications Claiming Priority (3)

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US201662354623P 2016-06-24 2016-06-24
US62/354,623 2016-06-24
PCT/US2017/037213 WO2017222873A1 (en) 2016-06-24 2017-06-13 Polycrystalline ceramic substrate and method of manufacture

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KR20190020336A KR20190020336A (ko) 2019-02-28
KR102391997B1 true KR102391997B1 (ko) 2022-04-28

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KR1020197002180A Active KR102391997B1 (ko) 2016-06-24 2017-06-13 다결정성 세라믹 기판 및 그 제조 방법
KR1020237032172A Active KR102747292B1 (ko) 2016-06-24 2017-06-13 다결정성 세라믹 기판 및 그 제조 방법
KR1020247042453A Active KR102929763B1 (ko) 2016-06-24 2017-06-13 다결정성 세라믹 기판 및 그 제조 방법
KR1020227013772A Active KR102582390B1 (ko) 2016-06-24 2017-06-13 다결정성 세라믹 기판 및 그 제조 방법

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KR1020247042453A Active KR102929763B1 (ko) 2016-06-24 2017-06-13 다결정성 세라믹 기판 및 그 제조 방법
KR1020227013772A Active KR102582390B1 (ko) 2016-06-24 2017-06-13 다결정성 세라믹 기판 및 그 제조 방법

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US (6) US10134589B2 (https=)
EP (2) EP3475975B1 (https=)
JP (4) JP6719600B2 (https=)
KR (4) KR102391997B1 (https=)
CN (2) CN109716508B (https=)
SG (1) SG11201811295TA (https=)
TW (5) TWI823763B (https=)
WO (1) WO2017222873A1 (https=)

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US10290674B2 (en) 2016-04-22 2019-05-14 QROMIS, Inc. Engineered substrate including light emitting diode and power circuitry
US10297445B2 (en) * 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
TWI823763B (zh) 2016-06-24 2023-11-21 美商克若密斯股份有限公司 工程基板結構
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10411108B2 (en) 2017-03-29 2019-09-10 QROMIS, Inc. Vertical gallium nitride Schottky diode
US10399905B2 (en) * 2017-08-31 2019-09-03 Corning Incorporated Ceramic housing with texture
CN110473919A (zh) * 2018-05-11 2019-11-19 世界先进积体电路股份有限公司 半导体结构、高电子迁移率晶体管及半导体结构制造方法
CN110752251A (zh) * 2018-07-24 2020-02-04 兆远科技股份有限公司 复合衬底及其制造方法
US11688825B2 (en) 2019-01-31 2023-06-27 Industrial Technology Research Institute Composite substrate and light-emitting diode
TWI736962B (zh) * 2019-01-31 2021-08-21 財團法人工業技術研究院 複合式基板及其製造方法
CN111509095B (zh) * 2019-01-31 2022-01-04 财团法人工业技术研究院 复合式基板及其制造方法
TWI706563B (zh) * 2019-03-25 2020-10-01 世界先進積體電路股份有限公司 半導體結構、高電子遷移率電晶體及半導體結構的製造方法
CN111785773A (zh) * 2019-04-04 2020-10-16 世界先进积体电路股份有限公司 半导体结构、高电子迁移率晶体管及半导体结构制造方法
US10790143B1 (en) 2019-07-03 2020-09-29 Vanguard International Semiconductor Corporation Semiconductor structure, high electron mobility transistor, and method for fabricating semiconductor structure
US12046502B2 (en) 2019-09-09 2024-07-23 Watlow Electric Manufacturing Company Electrostatic puck and method of manufacture
KR102789020B1 (ko) * 2019-12-19 2025-04-01 삼성전기주식회사 전자부품 내장기판
US11881404B2 (en) 2020-02-11 2024-01-23 QROMIS, Inc. Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources
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