KR102375870B1 - 황 도핑된 탄소 하드마스크들 - Google Patents

황 도핑된 탄소 하드마스크들 Download PDF

Info

Publication number
KR102375870B1
KR102375870B1 KR1020140130456A KR20140130456A KR102375870B1 KR 102375870 B1 KR102375870 B1 KR 102375870B1 KR 1020140130456 A KR1020140130456 A KR 1020140130456A KR 20140130456 A KR20140130456 A KR 20140130456A KR 102375870 B1 KR102375870 B1 KR 102375870B1
Authority
KR
South Korea
Prior art keywords
sulfur
ahm
doped
source
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020140130456A
Other languages
English (en)
Korean (ko)
Other versions
KR20150037641A (ko
Inventor
시리쉬 케이. 래디
앨리스 지. 홀리스터
토스텐 릴
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20150037641A publication Critical patent/KR20150037641A/ko
Priority to KR1020220031478A priority Critical patent/KR102525779B1/ko
Application granted granted Critical
Publication of KR102375870B1 publication Critical patent/KR102375870B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J31/00—Apparatus for making beverages
    • A47J31/44—Parts or details or accessories of beverage-making apparatus
    • A47J31/60—Cleaning devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D65/00—Wrappers or flexible covers; Packaging materials of special type or form
    • B65D65/38—Packaging materials of special type or form
    • B65D65/46—Applications of disintegrable, dissolvable or edible materials
    • B65D65/466—Bio- or photodegradable packaging materials
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/04—Detergent materials or soaps characterised by their shape or physical properties combined with or containing other objects
    • C11D17/041—Compositions releasably affixed on a substrate or incorporated into a dispensing means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/04—Detergent materials or soaps characterised by their shape or physical properties combined with or containing other objects
    • C11D17/041—Compositions releasably affixed on a substrate or incorporated into a dispensing means
    • C11D17/046—Insoluble free body dispenser
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C11D7/12—Carbonates bicarbonates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J2203/00—Devices having filling level indicating means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Food Science & Technology (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Apparatus For Making Beverages (AREA)
KR1020140130456A 2013-09-30 2014-09-29 황 도핑된 탄소 하드마스크들 Active KR102375870B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220031478A KR102525779B1 (ko) 2013-09-30 2022-03-14 황 도핑된 탄소 하드마스크들

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361884800P 2013-09-30 2013-09-30
US61/884,800 2013-09-30
US14/270,001 US9320387B2 (en) 2013-09-30 2014-05-05 Sulfur doped carbon hard masks
US14/270,001 2014-05-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020220031478A Division KR102525779B1 (ko) 2013-09-30 2022-03-14 황 도핑된 탄소 하드마스크들

Publications (2)

Publication Number Publication Date
KR20150037641A KR20150037641A (ko) 2015-04-08
KR102375870B1 true KR102375870B1 (ko) 2022-03-16

Family

ID=52738893

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020140130456A Active KR102375870B1 (ko) 2013-09-30 2014-09-29 황 도핑된 탄소 하드마스크들
KR1020220031478A Active KR102525779B1 (ko) 2013-09-30 2022-03-14 황 도핑된 탄소 하드마스크들

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020220031478A Active KR102525779B1 (ko) 2013-09-30 2022-03-14 황 도핑된 탄소 하드마스크들

Country Status (5)

Country Link
US (2) US9320387B2 (https=)
JP (1) JP6689565B2 (https=)
KR (2) KR102375870B1 (https=)
CN (1) CN104517815B (https=)
TW (1) TWI644361B (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12396588B2 (en) 2007-07-13 2025-08-26 Adrian Rivera Maynez Enterprises, Inc. Brewing material container for a beverage brewer
US10071851B2 (en) 2010-07-12 2018-09-11 Robert Bao Vu Apparatus and products for producing beverages, and methods for making and using same
US8707855B2 (en) 2011-05-09 2014-04-29 Eko Brands, Llc Beverage Brewing Device
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US9589799B2 (en) 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US20150327718A1 (en) 2014-02-14 2015-11-19 Remington Designs, Llc Apparatuses and methods for solute extraction
US9948268B2 (en) 2015-02-09 2018-04-17 Samsung Electro-Mechanics Co., Ltd. Multiband antenna having external conductor and electronic device including the same
US9385318B1 (en) 2015-07-28 2016-07-05 Lam Research Corporation Method to integrate a halide-containing ALD film on sensitive materials
US12185867B2 (en) 2015-10-30 2025-01-07 Adrian Rivera Beverage brewer spray apparatus having accommodation for multiple dispersion members
US11638499B2 (en) 2020-05-27 2023-05-02 Adrian Rivera Beverage brewer spray apparatus having multiple dispersion members
US10702096B2 (en) * 2015-10-30 2020-07-07 Adrian Rivera Brewing chamber cleaner
WO2017077510A1 (en) * 2015-11-06 2017-05-11 Cafetto Asia Pte. Ltd. Cleaning arrangement for capsule based beverage dispensers
CN106706710A (zh) * 2015-11-11 2017-05-24 中国科学院上海微系统与信息技术研究所 基于硫掺杂石墨烯的氮氧化物气体传感器及其制备方法
DE102016100724A1 (de) * 2016-01-18 2017-07-20 Miele & Cie. Kg Getränkeautomat mit automatischer Reinigungsvorrichtung
US10043672B2 (en) * 2016-03-29 2018-08-07 Lam Research Corporation Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask
US9622616B1 (en) 2016-03-30 2017-04-18 Eco 2, Llc Descaling pod for brewing machine
US20170280929A1 (en) * 2016-03-30 2017-10-05 Eco 2, Llc Descaling device for a beverage machine and method of descaling a beverage machine
US20230180963A1 (en) * 2016-06-23 2023-06-15 Adrian Rivera Brewing Machine Cleaner
US9947558B2 (en) * 2016-08-12 2018-04-17 Lam Research Corporation Method for conditioning silicon part
PL3537891T3 (pl) 2016-11-09 2025-04-07 Pepsico, Inc. Urządzenia, sposoby i systemy do wytwarzania napojów gazowanych
US10643858B2 (en) 2017-10-11 2020-05-05 Samsung Electronics Co., Ltd. Method of etching substrate
WO2019175322A1 (en) * 2018-03-15 2019-09-19 Dsm Ip Assets B.V. Bags-in-bag packaging system
KR102670420B1 (ko) * 2018-04-24 2024-05-28 어플라이드 머티어리얼스, 인코포레이티드 카본 하드-마스크의 플라즈마-강화 화학 기상 증착
US10985009B2 (en) * 2018-04-27 2021-04-20 Applied Materials, Inc. Methods to deposit flowable (gap-fill) carbon containing films using various plasma sources
TWI804638B (zh) 2018-06-22 2023-06-11 日商關東電化工業股份有限公司 使用含硫原子之氣體分子之電漿蝕刻方法
US10692759B2 (en) * 2018-07-17 2020-06-23 Applied Materials, Inc. Methods for manufacturing an interconnect structure for semiconductor devices
CN113710829B (zh) 2019-03-25 2024-06-18 朗姆研究公司 高蚀刻选择性的低应力可灰化碳硬掩模
US11837441B2 (en) 2019-05-29 2023-12-05 Lam Research Corporation Depositing a carbon hardmask by high power pulsed low frequency RF
CN114342043A (zh) * 2019-08-30 2022-04-12 朗姆研究公司 低压下的高密度、模量和硬度的非晶碳膜
CN115039209A (zh) * 2019-12-31 2022-09-09 玛特森技术公司 用于硬掩模去除的系统和方法
JP7710474B2 (ja) * 2020-06-29 2025-07-18 アプライド マテリアルズ インコーポレイテッド ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法
US20230360922A1 (en) * 2020-09-25 2023-11-09 Lam Research Corporation Robust ashable hard mask
KR20230078590A (ko) * 2020-09-29 2023-06-02 램 리써치 코포레이션 순수 화학적 수단들에 의한 비정질 탄소 하드 마스크 막의 증착 속도 향상
US20240282570A1 (en) * 2021-06-23 2024-08-22 Lam Research Corporation Radical-activated carbon film deposition
CH719068A9 (de) * 2021-10-15 2023-06-30 Schaerer Ag Behälter zur Bereitstellung eines flüssigen Reinigungsmittels für Kaffeemaschinen sowie Vorrichtung und Verfahren zur Herstellung eines flüssigen Reinigungsmittels.
KR102890995B1 (ko) * 2023-05-16 2025-11-24 나이스 스타 코퍼레이션 웨이퍼 식각방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968379A (en) 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
JP2005354109A (ja) * 1999-03-26 2005-12-22 Japan Science & Technology Agency ｎ型ダイヤモンドを用いた半導体デバイス
JP2008141009A (ja) * 2006-12-01 2008-06-19 Tokyo Electron Ltd アモルファスカーボン膜、半導体装置、成膜方法、成膜装置及び記憶媒体
US20100197558A1 (en) 2009-01-30 2010-08-05 Ecolab USA Development of an aluminum hydroxycarboxylate builder
US20120121764A1 (en) 2010-11-15 2012-05-17 Conair Corporation Brewed beverage appliance and method
JP2013526783A (ja) * 2010-05-20 2013-06-24 アプライド マテリアルズ インコーポレイテッド 超高選択性アッシング除去可能ハードマスク膜
WO2013182299A1 (de) 2012-06-06 2013-12-12 Aquis Wasser-Luft-Systeme Gmbh, Lindau, Zweigniederlassung Rebstein Reinigerkapsel

Family Cites Families (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU382671A1 (ru) 1971-03-25 1973-05-25 Ю. В. Далаго, В. П. Степанюк , В. А. Черненко Московский машиностроительный завод Знам труда Способ наполнения газообразным ацетиленом емкостей с растворителями
US3816976A (en) 1971-07-15 1974-06-18 Lummus Co Process for the purification of acetylene and ethylene
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4274841A (en) 1980-03-28 1981-06-23 Union Carbide Corporation Acetylene recovery process and apparatus
JPS6018914U (ja) 1983-07-15 1985-02-08 近畿印刷株式会社 折り込み紙箱
DE3422417A1 (de) 1984-06-16 1985-12-19 Kernforschungsanlage Jülich GmbH, 5170 Jülich Verfahren und vorrichtung zur abtrennung einer gaskomponente aus einem gasgemisch durch ausfrieren
US4673589A (en) 1986-02-18 1987-06-16 Amoco Corporation Photoconducting amorphous carbon
JPS6446098A (en) 1987-08-07 1989-02-20 Nichigo Acetylen Method for cleaning inside of container of dissolved acetylene
US4863760A (en) 1987-12-04 1989-09-05 Hewlett-Packard Company High speed chemical vapor deposition process utilizing a reactor having a fiber coating liquid seal and a gas sea;
US4975144A (en) 1988-03-22 1990-12-04 Semiconductor Energy Laboratory Co., Ltd. Method of plasma etching amorphous carbon films
US5222549A (en) 1988-07-04 1993-06-29 Japan Oxygen Co., Ltd. Condenser/evaporator
JP2687966B2 (ja) 1990-08-20 1997-12-08 富士通株式会社 半導体装置の製造方法
JPH05508266A (ja) 1991-04-03 1993-11-18 イーストマン・コダック・カンパニー ＧａＡｓをドライエッチングするための高耐久性マスク
US5470661A (en) 1993-01-07 1995-11-28 International Business Machines Corporation Diamond-like carbon films from a hydrocarbon helium plasma
US5261250A (en) 1993-03-09 1993-11-16 Polycold Systems International Method and apparatus for recovering multicomponent vapor mixtures
EP0653501B1 (en) 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
JPH07243064A (ja) 1994-01-03 1995-09-19 Xerox Corp 基板清掃方法
US6030591A (en) 1994-04-06 2000-02-29 Atmi Ecosys Corporation Process for removing and recovering halocarbons from effluent process streams
ATE251798T1 (de) 1994-04-28 2003-10-15 Applied Materials Inc Verfahren zum betreiben eines cvd-reaktors hoher plasma-dichte mit kombinierter induktiver und kapazitiver einkopplung
JPH08152262A (ja) 1994-11-29 1996-06-11 Kawasaki Steel Corp 希ガス分離プロセス用の循環吸着装置
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US5792269A (en) 1995-10-31 1998-08-11 Applied Materials, Inc. Gas distribution for CVD systems
GB9522476D0 (en) 1995-11-02 1996-01-03 Boc Group Plc Method and vessel for the storage of gas
US5985103A (en) 1995-12-19 1999-11-16 Micron Technology, Inc. Method for improved bottom and side wall coverage of high aspect ratio features
DE59813331D1 (de) 1997-06-16 2006-03-30 Bosch Gmbh Robert Verfahren und einrichtung zum vakuumbeschichten eines substrates
US6150719A (en) 1997-07-28 2000-11-21 General Electric Company Amorphous hydrogenated carbon hermetic structure and fabrication method
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6035803A (en) 1997-09-29 2000-03-14 Applied Materials, Inc. Method and apparatus for controlling the deposition of a fluorinated carbon film
US6041734A (en) 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
TWI246633B (en) 1997-12-12 2006-01-01 Applied Materials Inc Method of pattern etching a low k dielectric layen
US6635185B2 (en) 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6387819B1 (en) 1998-04-29 2002-05-14 Applied Materials, Inc. Method for etching low K dielectric layers
JP3568394B2 (ja) * 1998-07-07 2004-09-22 独立行政法人 科学技術振興機構 低抵抗ｎ型ダイヤモンドの合成法
US6331480B1 (en) 1999-02-18 2001-12-18 Taiwan Semiconductor Manufacturing Company Method to improve adhesion between an overlying oxide hard mask and an underlying low dielectric constant material
FR2790762B1 (fr) 1999-03-09 2001-06-01 Centre Nat Rech Scient Procede de traitement de surface pour protection et fonctionnalisation des polymeres et produit obtenu selon ce procede
US6617553B2 (en) 1999-05-19 2003-09-09 Applied Materials, Inc. Multi-zone resistive heater
US6367413B1 (en) 1999-06-15 2002-04-09 Tokyo Electron Limited Apparatus for monitoring substrate biasing during plasma processing of a substrate
US6310366B1 (en) 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6241793B1 (en) 1999-08-02 2001-06-05 Taiwan Semiconductor Manufacturing Company, Ltd Cold trap equipped with curvilinear cooling plate
US6537741B2 (en) 1999-11-24 2003-03-25 Nexpress Solutions Llc Fusing belt for applying a protective overcoat to a photographic element
US6286321B1 (en) 2000-01-03 2001-09-11 Thermo Savant, Inc. Condenser cold trap unit with separate fraction collection feature
US6422918B1 (en) 2000-01-04 2002-07-23 Advanced Micro Devices, Inc. Chemical-mechanical polishing of photoresist layer
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6319299B1 (en) 2000-03-30 2001-11-20 Vanguard International Semiconductor Corporation Adjustable cold trap with different stages
JP2002194547A (ja) 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
US20040224504A1 (en) 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
JP4559595B2 (ja) 2000-07-17 2010-10-06 東京エレクトロン株式会社 被処理体の載置装置及びプラズマ処理装置
US6645848B2 (en) 2001-06-01 2003-11-11 Emcore Corporation Method of improving the fabrication of etched semiconductor devices
US20030044532A1 (en) 2001-08-29 2003-03-06 Shyh-Dar Lee Process for preparing porous low dielectric constant material
DE10153310A1 (de) 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
US7091137B2 (en) 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US7226853B2 (en) * 2001-12-26 2007-06-05 Applied Materials, Inc. Method of forming a dual damascene structure utilizing a three layer hard mask structure
US6777349B2 (en) 2002-03-13 2004-08-17 Novellus Systems, Inc. Hermetic silicon carbide
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
AU2003231423A1 (en) 2002-05-09 2003-11-11 Toyoki Kunitake Thin film material and method for preparation thereof
US6835663B2 (en) 2002-06-28 2004-12-28 Infineon Technologies Ag Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity
US20040018750A1 (en) 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US6740535B2 (en) 2002-07-29 2004-05-25 International Business Machines Corporation Enhanced T-gate structure for modulation doped field effect transistors
US6939808B2 (en) 2002-08-02 2005-09-06 Applied Materials, Inc. Undoped and fluorinated amorphous carbon film as pattern mask for metal etch
US6787452B2 (en) 2002-11-08 2004-09-07 Chartered Semiconductor Manufacturing Ltd. Use of amorphous carbon as a removable ARC material for dual damascene fabrication
US20040180551A1 (en) 2003-03-13 2004-09-16 Biles Peter John Carbon hard mask for aluminum interconnect fabrication
FR2853313B1 (fr) 2003-04-04 2005-05-06 Air Liquide Procede d'elimination d'un solvant contenu dans l'acetylene, installation pour la mise en oeuvre du procede
US7205228B2 (en) 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US7041600B2 (en) 2003-06-30 2006-05-09 International Business Machines Corporation Methods of planarization
US7030023B2 (en) 2003-09-04 2006-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for simultaneous degas and baking in copper damascene process
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
EP1685606A1 (en) 2003-11-13 2006-08-02 Philips Intellectual Property & Standards GmbH Electronic device comprising a protective barrier layer stack
KR100743745B1 (ko) 2004-01-13 2007-07-27 동경 엘렉트론 주식회사 반도체장치의 제조방법 및 성막시스템
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
US7638440B2 (en) 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
WO2005087974A2 (en) 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
JP5113982B2 (ja) 2004-04-23 2013-01-09 トヨタ自動車株式会社 金属炭化物粒子が分散した炭素複合材料の製造方法
US7384693B2 (en) 2004-04-28 2008-06-10 Intel Corporation Diamond-like carbon films with low dielectric constant and high mechanical strength
US7288484B1 (en) 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US7220982B2 (en) 2004-07-27 2007-05-22 Micron Technology, Inc. Amorphous carbon-based non-volatile memory
US7202127B2 (en) 2004-08-27 2007-04-10 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7271106B2 (en) 2004-08-31 2007-09-18 Micron Technology, Inc. Critical dimension control for integrated circuits
US7314506B2 (en) 2004-10-25 2008-01-01 Matheson Tri-Gas, Inc. Fluid purification system with low temperature purifier
US7335980B2 (en) 2004-11-04 2008-02-26 International Business Machines Corporation Hardmask for reliability of silicon based dielectrics
US7202176B1 (en) 2004-12-13 2007-04-10 Novellus Systems, Inc. Enhanced stripping of low-k films using downstream gas mixing
US20060205223A1 (en) 2004-12-30 2006-09-14 Smayling Michael C Line edge roughness reduction compatible with trimming
US7235478B2 (en) 2005-01-12 2007-06-26 Intel Corporation Polymer spacer formation
US7371461B2 (en) 2005-01-13 2008-05-13 International Business Machines Corporation Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics
KR20060098522A (ko) 2005-03-03 2006-09-19 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
EP1720072B1 (en) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
JP5203575B2 (ja) 2005-05-04 2013-06-05 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． コーティング組成物
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
KR100622268B1 (ko) 2005-07-04 2006-09-11 한양대학교 산학협력단 ＲｅＲＡＭ 소자용 다층 이원산화박막의 형성방법
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7572572B2 (en) 2005-09-01 2009-08-11 Micron Technology, Inc. Methods for forming arrays of small, closely spaced features
US20070059913A1 (en) 2005-09-15 2007-03-15 King Sean W Capping layer to reduce amine poisoning of photoresist layers
US7432210B2 (en) 2005-10-05 2008-10-07 Applied Materials, Inc. Process to open carbon based hardmask
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7399712B1 (en) 2005-10-31 2008-07-15 Novellus Systems, Inc. Method for etching organic hardmasks
US8664124B2 (en) 2005-10-31 2014-03-04 Novellus Systems, Inc. Method for etching organic hardmasks
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
KR100735750B1 (ko) 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
US7381644B1 (en) 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
TWI302349B (en) 2006-01-04 2008-10-21 Promos Technologies Inc Metal etching process and rework method thereof
US20070202640A1 (en) 2006-02-28 2007-08-30 Applied Materials, Inc. Low-k spacer integration into CMOS transistors
US7645357B2 (en) 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US7981810B1 (en) 2006-06-08 2011-07-19 Novellus Systems, Inc. Methods of depositing highly selective transparent ashable hardmask films
KR100764343B1 (ko) 2006-09-22 2007-10-08 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
KR100855855B1 (ko) 2006-10-04 2008-09-01 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
US20080128907A1 (en) 2006-12-01 2008-06-05 International Business Machines Corporation Semiconductor structure with liner
US7981777B1 (en) 2007-02-22 2011-07-19 Novellus Systems, Inc. Methods of depositing stable and hermetic ashable hardmask films
US7915166B1 (en) 2007-02-22 2011-03-29 Novellus Systems, Inc. Diffusion barrier and etch stop films
US20080242912A1 (en) 2007-03-29 2008-10-02 Olivier Letessier Methods and Apparatus for Providing a High Purity Acetylene Product
US20080264803A1 (en) 2007-04-20 2008-10-30 Rajat Agrawal Methods and Apparatus for the Storage of Acetylene in the Absence of Acetone or Dimethylformamide
KR100871967B1 (ko) 2007-06-05 2008-12-08 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
US8236476B2 (en) 2008-01-08 2012-08-07 International Business Machines Corporation Multiple exposure photolithography methods and photoresist compositions
US8119853B2 (en) 2008-01-10 2012-02-21 L'Air Liquide SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Low pressure acetylene storage
US8133819B2 (en) * 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
US7820556B2 (en) 2008-06-04 2010-10-26 Novellus Systems, Inc. Method for purifying acetylene gas for use in semiconductor processes
US8435608B1 (en) 2008-06-27 2013-05-07 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
US7955990B2 (en) 2008-12-12 2011-06-07 Novellus Systems, Inc. Method for improved thickness repeatability of PECVD deposited carbon films
US7803715B1 (en) 2008-12-29 2010-09-28 Shai Haimson Lithographic patterning for sub-90nm with a multi-layered carbon-based hardmask
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法
US20110244142A1 (en) 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
US8563414B1 (en) 2010-04-23 2013-10-22 Novellus Systems, Inc. Methods for forming conductive carbon films by PECVD
WO2011137059A2 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Amorphous carbon deposition method for improved stack defectivity
JP5835587B2 (ja) 2010-10-14 2015-12-24 日産化学工業株式会社 単分子層又は多分子層形成用組成物
US8541311B2 (en) * 2010-12-22 2013-09-24 GlobalFoundries, Inc. Integrated circuit fabrication methods utilizing embedded hardmask layers for high resolution patterning
EP2525416A2 (en) * 2011-05-17 2012-11-21 Intevac, Inc. Method for rear point contact fabrication for solar cells
EP2604547A1 (en) * 2011-12-12 2013-06-19 Nestec S.A. A capsule for descaling a beverage preparation machine
JP2012233259A (ja) * 2012-06-25 2012-11-29 Tokyo Electron Ltd アモルファスカーボン膜の成膜方法、それを用いた半導体装置の製造方法、およびコンピュータ読取可能な記憶媒体
US8986921B2 (en) 2013-01-15 2015-03-24 International Business Machines Corporation Lithographic material stack including a metal-compound hard mask
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US8969207B2 (en) 2013-03-13 2015-03-03 Globalfoundries Inc. Methods of forming a masking layer for patterning underlying structures
US8906802B2 (en) 2013-03-15 2014-12-09 Globalfoundries Inc. Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process
US9589799B2 (en) 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968379A (en) 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
JP2005354109A (ja) * 1999-03-26 2005-12-22 Japan Science & Technology Agency ｎ型ダイヤモンドを用いた半導体デバイス
JP2008141009A (ja) * 2006-12-01 2008-06-19 Tokyo Electron Ltd アモルファスカーボン膜、半導体装置、成膜方法、成膜装置及び記憶媒体
US20100197558A1 (en) 2009-01-30 2010-08-05 Ecolab USA Development of an aluminum hydroxycarboxylate builder
JP2013526783A (ja) * 2010-05-20 2013-06-24 アプライド マテリアルズ インコーポレイテッド 超高選択性アッシング除去可能ハードマスク膜
US20120121764A1 (en) 2010-11-15 2012-05-17 Conair Corporation Brewed beverage appliance and method
WO2013182299A1 (de) 2012-06-06 2013-12-12 Aquis Wasser-Luft-Systeme Gmbh, Lindau, Zweigniederlassung Rebstein Reinigerkapsel

Also Published As

Publication number Publication date
TWI644361B (zh) 2018-12-11
US20150093915A1 (en) 2015-04-02
JP2015070270A (ja) 2015-04-13
CN104517815B (zh) 2017-08-22
KR20220035900A (ko) 2022-03-22
TW201528374A (zh) 2015-07-16
KR102525779B1 (ko) 2023-04-25
CN104517815A (zh) 2015-04-15
US20150090300A1 (en) 2015-04-02
US9320387B2 (en) 2016-04-26
KR20150037641A (ko) 2015-04-08
JP6689565B2 (ja) 2020-04-28

Similar Documents

Publication Publication Date Title
KR102525779B1 (ko) 황 도핑된 탄소 하드마스크들
KR102564160B1 (ko) 펄스된 저주파수 ｒｆ 전력에 의한 고 선택도 및 저 응력의 탄소 하드마스크
JP2015070270A5 (https=)
KR102384484B1 (ko) 펄싱된 플라즈마 노출을 사용하여 플라즈마 강화된 원자층 증착
KR102708853B1 (ko) 실리콘 나이트라이드를 에칭하는 동안 초고선택도를 달성하기 위한 방법
TWI716421B (zh) 在pecvd系統中用以改善非晶硼-碳硬光罩製程之膜內顆粒效能之方法
CN102187432B (zh) 利用等离子体增强化学气相沉积来沉积共形无定形碳膜层的方法
CN101312126B (zh) 形成非晶碳膜的方法和使用该方法制造半导体装置的方法
CN109637926A (zh) 超高模量与蚀刻选择性的硼-碳硬掩模膜
US20150247238A1 (en) Rf cycle purging to reduce surface roughness in metal oxide and metal nitride films
KR20220114105A (ko) 반도체 디바이스 제조시 고품질 실리콘 옥사이드 막들의 저온 형성
TW201834008A (zh) 用於高模數原子層沉積二氧化矽間隔件的方法
CN107799390A (zh) 用于半导体图案化应用的高干法蚀刻速率材料
TW201840463A (zh) 用於進階圖案化之軟著陸奈米層
CN103225071A (zh) 用于沉积无氯保形SiN 膜的方法
KR20100135243A (ko) 개선된 밀도와 도포율을 갖는 비정질 탄소의 증착 방법
TW202233883A (zh) 藉由純化學手段的非晶碳硬遮罩膜的沉積速率改善
KR102741789B1 (ko) 3d nand 집적에 대해 개선된 에칭 선택도를 가지는 나이트라이드 막들
KR20230121962A (ko) 넓은 갭 전극 간격을 갖는 저압 조건들에서 고 선택도, 저 응력 및 저 수소 탄소 하드 마스크들

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

X091 Application refused [patent]
T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
A107 Divisional application of patent
GRNT Written decision to grant
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000