JP6689565B2 - 硫黄ドープ炭素ハードマスク - Google Patents
硫黄ドープ炭素ハードマスク Download PDFInfo
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- JP6689565B2 JP6689565B2 JP2014193209A JP2014193209A JP6689565B2 JP 6689565 B2 JP6689565 B2 JP 6689565B2 JP 2014193209 A JP2014193209 A JP 2014193209A JP 2014193209 A JP2014193209 A JP 2014193209A JP 6689565 B2 JP6689565 B2 JP 6689565B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 63
- 229910052799 carbon Inorganic materials 0.000 title claims description 62
- 238000000034 method Methods 0.000 claims description 144
- 239000000758 substrate Substances 0.000 claims description 86
- 230000008569 process Effects 0.000 claims description 71
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 68
- 238000000151 deposition Methods 0.000 claims description 64
- 229910052717 sulfur Inorganic materials 0.000 claims description 58
- 239000011593 sulfur Substances 0.000 claims description 58
- 239000007789 gas Substances 0.000 claims description 56
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 claims description 51
- 230000008021 deposition Effects 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 32
- 239000002243 precursor Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 24
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 17
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 14
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical group S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 4
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 4
- 229910021398 atomic carbon Inorganic materials 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 51
- 238000012545 processing Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000004380 ashing Methods 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 230000009977 dual effect Effects 0.000 description 9
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- UAJUXJSXCLUTNU-UHFFFAOYSA-N pranlukast Chemical compound C=1C=C(OCCCCC=2C=CC=CC=2)C=CC=1C(=O)NC(C=1)=CC=C(C(C=2)=O)C=1OC=2C=1N=NNN=1 UAJUXJSXCLUTNU-UHFFFAOYSA-N 0.000 description 6
- 229960004583 pranlukast Drugs 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 4
- SKBLJQADGZYMKA-UHFFFAOYSA-N OPOP Chemical compound OPOP SKBLJQADGZYMKA-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000005596 ionic collisions Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DHBXNPKRAUYBTH-UHFFFAOYSA-N 1,1-ethanedithiol Chemical compound CC(S)S DHBXNPKRAUYBTH-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- B65D65/00—Wrappers or flexible covers; Packaging materials of special type or form
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- B65D65/46—Applications of disintegrable, dissolvable or edible materials
- B65D65/466—Bio- or photodegradable packaging materials
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
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Description
本発明は、以下の適用例としても実現可能である。
半導体基板上のエッチング対象の第1の層の上にアッシャブルハードマスクを形成する方法であって、
前記半導体基板を収容する堆積チャンバに、炭素源および硫黄源を含む前駆体ガスを提供し、
前記前駆体ガスからプラズマを発生し、それにより、プラズマ化学気相成長(PECVD)プロセスによって前記第1の層上に硫黄ドープアッシャブルハードマスクを堆積する
方法。
[適用例2]
前記堆積された硫黄ドープアッシャブルハードマスクが、約0.5%〜約5%の間の原子硫黄含有量を有する適用例1に記載の方法。
[適用例3]
前記堆積された硫黄ドープアッシャブルハードマスクが、約60%〜約90%の間の原子炭素含有量を有する適用例2に記載の方法。
[適用例4]
前記堆積された硫黄ドープアッシャブルハードマスクが、約13%〜約26%の間の原子水素含有量を有する適用例2に記載の方法。
[適用例5]
前記硫黄ドープアッシャブルハードマスクが、約1000Å〜約90000Åの間の厚さである適用例1から4のいずれか一項に記載の方法。
[適用例6]
前記硫黄ドープアッシャブルハードマスクが、約−40MPa〜約−4000MPaの間の応力を有する適用例1から5のいずれか一項に記載の方法。
[適用例7]
前記第1の層が、酸化物層、窒化物層、またはポリシリコン層からなる群から選択される適用例1から6のいずれか一項に記載の方法。
[適用例8]
前記炭素源が、メタン、アセチレン、またはプロピレンである適用例1から7のいずれか一項に記載の方法。
[適用例9]
前記硫黄源が、硫化水素(H2S)または二硫化炭素(CS2)である適用例1から8のいずれか一項に記載の方法。
[適用例10]
前記硫黄源が、二硫化炭素(CS2)であり、前記炭素源が、アセチレン(C2H2)である適用例1から9のいずれか一項に記載の方法。
[適用例11]
前記炭素源と前記硫黄源が、前記堆積チャンバの上流で混合される適用例1から10のいずれか一項に記載の方法。
[適用例12]
前記炭素源と前記硫黄源が、前記堆積チャンバに別々に提供される適用例1から10のいずれか一項に記載の方法。
[適用例13]
更に、前記アッシャブルハードマスク層をパターン形成する、適用例1から12のいずれか一項に記載の方法。
[適用例14]
更に、前記アッシャブルハードマスクのパターンに従って前記第1の層をエッチングする適用例13に記載の方法。
[適用例15]
半導体基板上に硫黄ドープアモルファス炭素ベース被膜を形成する方法であって、
堆積チャンバ内に前記半導体基板を提供し、
炭素源および硫黄源を含む前駆体ガスに前記基板を曝露し、
プラズマ化学気相成長(PECVD)プロセスによって前記基板上に硫黄ドープアモルファス炭素ベース被膜を堆積する
方法。
[適用例16]
前記硫黄ドープアモルファス炭素ベース被膜が、約0.5%〜約5%の間の原子硫黄含有量を有する適用例15に記載の方法。
[適用例17]
前記硫黄源が、硫化水素(H2S)または二硫化炭素(CS2)である適用例15または16に記載の方法。
[適用例18]
半導体基板を処理するように構成された装置であって、
(a)堆積チャンバと、(b)装置における動作を制御するための制御装置とを備え、
(a)前記堆積チャンバが、
シャワーヘッドと、
プラズマ発生器と、
基板支持体と、
1つまたは複数のガス入口と
を備え、
(b)制御装置が、
前記半導体基板を収容する前記堆積チャンバに、炭素源および硫黄源を含む前駆体ガスを流す命令と、
前記プラズマ発生器にパワーを印加し、前記前駆体ガスからプラズマを発生し、それにより、プラズマ化学気相成長(PECVD)プロセスによって前記基板上に硫黄ドープアッシャブルハードマスクを堆積する命令とを
機械による読み取り可能に備える
装置。
[適用例19]
半導体基板上のエッチング対象の第1の層の上にアッシャブルハードマスクを形成する方法であって、
前記半導体基板を収容する堆積チャンバに、炭素源および硫黄源を含む前駆体ガスを提供し、
前記前駆体ガスからプラズマを発生し、それにより、プラズマ化学気相成長(PECVD)プロセスによって前記第1の層上に硫黄ドープアッシャブルハードマスクを堆積し、
前記堆積された硫黄ドープアッシャブルハードマスクが、約0.5%〜約5%の間の原子硫黄含有量を有する、
方法。
[適用例20]
半導体基板上に硫黄ドープアモルファス炭素ベース被膜を形成する方法であって、
堆積チャンバ内に前記半導体基板を提供し、
炭素源および硫黄源を含む前駆体ガスに前記半導体基板を曝露し、
プラズマ化学気相成長(PECVD)プロセスによって前記半導体基板上に前記硫黄ドープアモルファス炭素ベース被膜を堆積し、
前記炭素源と前記硫黄源が、前記堆積チャンバの上流で混合される、
方法。
[適用例21]
半導体基板上に硫黄ドープアモルファス炭素ベース被膜を形成する方法であって、
堆積チャンバ内に前記半導体基板を提供し、
炭素源および硫黄源を含む前駆体ガスに前記半導体基板を曝露し、
プラズマ化学気相成長(PECVD)プロセスによって前記半導体基板上に前記硫黄ドープアモルファス炭素ベース被膜を堆積し、
前記硫黄ドープアモルファス炭素ベース被膜が、約0.5%〜約5%の間の原子硫黄含有量を有する、
方法。
実施形態は、マルチステーション、またはマルチチャンバ、または単一ステーションツールで実施することができる。様々な実施形態が、PECVDリアクタ(例えば、Lam Research Corporationから市販されているSequel(商標)またはVector(商標)リアクタチャンバ)など既存の半導体処理機器に適合し得る。一般に、装置は、1つまたは複数のチャンバまたはリアクタを収容し、各チャンバまたはリアクタが、1つまたは複数のステーションを含む。基板処理に適したチャンバは、1つまたは複数の基板を収容することがある。1つまたは複数のチャンバは、回転、振動、または他の擾乱を防止することによって、所定の位置で基板を維持する。幾つかの実施形態では、硫黄ドープAHMの堆積を施される基板は、堆積中にチャンバ内部で1つのステーションから別のステーションに移送されることがある。例えば、様々な実施形態によれば、1つのステーションで2000Åの硫黄ドープAHMが完全に堆積されることがあり、または4つのステーションでそれぞれ500Åの被膜が堆積されることがある。代替として、任意の数のステーションで、被膜全厚の任意の他の割合が堆積されることがある。複数のAHMが堆積される様々な実施形態では、各AHM層を堆積するために複数のステーションが使用されることもある。処理中、各基板は、ペデスタル、ウェハチャック、および/または他の基板保持装置によって所定位置に保持される。基板が加熱される特定の操作のために、装置は、加熱プレートなどの加熱器を有することがある。
ある一定の応力レベルで硫黄ドープおよび非ドープ炭素ハードマスクのエッチングレートを測定するために、実験を行った。実験は、1.8Torrのプロセス圧力で行った。300mmの基板に対して、4ステーションツールに関して以下のプラズマパワーを与える。
理解しやすくするために上記の実施形態を幾分詳細に述べてきたが、添付の特許請求の範囲の範囲内で幾つかの変更および修正を行うことができることは明らかであろう。本発明の実施形態のプロセス、システム、および装置を実装する多くの代替法が存在することに留意すべきである。したがって、本発明の実施形態は例示であり、限定ではないものとみなされるべきであり、それらの実施形態は、本明細書で与えた詳細に限定されるべきではない。
Claims (17)
- 半導体基板上のエッチング対象の第1の層の上にアッシャブルハードマスクを形成する方法であって、
前記半導体基板を収容する堆積チャンバに、炭素源および硫黄源を含む前駆体ガスを提供し、
前記前駆体ガスからプラズマを発生し、それにより、プラズマ化学気相成長(PECVD)プロセスによって前記第1の層上に硫黄ドープアッシャブルハードマスクを堆積し、
前記堆積された硫黄ドープアッシャブルハードマスクが、約0.5%〜約5%の間の原子硫黄含有量を有する、
方法。 - 前記堆積された硫黄ドープアッシャブルハードマスクが、約60%〜約90%の間の原子炭素含有量を有する請求項1に記載の方法。
- 前記堆積された硫黄ドープアッシャブルハードマスクが、約13%〜約26%の間の原子水素含有量を有する請求項1に記載の方法。
- 前記硫黄ドープアッシャブルハードマスクが、約1000Å〜約90000Åの間の厚さである請求項1から3のいずれか一項に記載の方法。
- 前記硫黄ドープアッシャブルハードマスクが、約−40MPa〜約−400MPaの間の応力を有する請求項1から4のいずれか一項に記載の方法。
- 前記第1の層が、酸化物層、窒化物層、およびポリシリコン層からなる群から選択される請求項1から5のいずれか一項に記載の方法。
- 前記炭素源が、メタン、アセチレン、またはプロピレンである請求項1から6のいずれか一項に記載の方法。
- 前記硫黄源が、硫化水素(H2S)または二硫化炭素(CS2)である請求項1から7のいずれか一項に記載の方法。
- 前記硫黄源が、二硫化炭素(CS2)であり、前記炭素源が、アセチレン(C2H2)である請求項1から8のいずれか一項に記載の方法。
- 前記炭素源と前記硫黄源が、前記堆積チャンバの上流で混合される請求項1から9のいずれか一項に記載の方法。
- 前記炭素源と前記硫黄源が、前記堆積チャンバに別々に提供される請求項1から9のいずれか一項に記載の方法。
- 更に、前記硫黄ドープアッシャブルハードマスクをパターン形成する、請求項1から11のいずれか一項に記載の方法。
- 更に、前記硫黄ドープアッシャブルハードマスクのパターンに従って前記第1の層をエッチングする請求項12に記載の方法。
- 半導体基板上に硫黄ドープアモルファス炭素ベース被膜を形成する方法であって、
堆積チャンバ内に前記半導体基板を提供し、
炭素源および硫黄源を含む前駆体ガスに前記半導体基板を曝露し、
プラズマ化学気相成長(PECVD)プロセスによって前記半導体基板上に前記硫黄ドープアモルファス炭素ベース被膜を堆積し、
前記炭素源と前記硫黄源が、前記堆積チャンバの上流で混合される、
方法。 - 半導体基板上に硫黄ドープアモルファス炭素ベース被膜を形成する方法であって、
堆積チャンバ内に前記半導体基板を提供し、
炭素源および硫黄源を含む前駆体ガスに前記半導体基板を曝露し、
プラズマ化学気相成長(PECVD)プロセスによって前記半導体基板上に前記硫黄ドープアモルファス炭素ベース被膜を堆積し、
前記硫黄ドープアモルファス炭素ベース被膜が、約0.5%〜約5%の間の原子硫黄含有量を有する、
方法。 - 前記硫黄源が、硫化水素(H2S)または二硫化炭素(CS2)である請求項14または15に記載の方法。
- 半導体基板を処理するように構成された装置であって、
(a)堆積チャンバと、(b)装置における動作を制御するための制御装置とを備え、
(a)前記堆積チャンバが、
シャワーヘッドと、
プラズマ発生器と、
基板支持体と、
1つまたは複数のガス入口と
を備え、
(b)制御装置が、
前記半導体基板を収容する前記堆積チャンバに、炭素源および硫黄源を含む前駆体ガスを流す命令と、
前記プラズマ発生器にパワーを印加し、前記前駆体ガスからプラズマを発生し、それにより、プラズマ化学気相成長(PECVD)プロセスによって前記半導体基板上に硫黄ドープアッシャブルハードマスクを堆積する命令とを
機械による読み取り可能に備える
装置。
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US14/270,001 US9320387B2 (en) | 2013-09-30 | 2014-05-05 | Sulfur doped carbon hard masks |
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Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
US9589799B2 (en) | 2013-09-30 | 2017-03-07 | Lam Research Corporation | High selectivity and low stress carbon hardmask by pulsed low frequency RF power |
US10045654B2 (en) | 2014-02-14 | 2018-08-14 | Coffee Solutions, Llc | Moving inlet nozzles in beverage systems |
US9948268B2 (en) | 2015-02-09 | 2018-04-17 | Samsung Electro-Mechanics Co., Ltd. | Multiband antenna having external conductor and electronic device including the same |
US9385318B1 (en) | 2015-07-28 | 2016-07-05 | Lam Research Corporation | Method to integrate a halide-containing ALD film on sensitive materials |
US11638499B2 (en) | 2020-05-27 | 2023-05-02 | Adrian Rivera | Beverage brewer spray apparatus having multiple dispersion members |
US10702096B2 (en) * | 2015-10-30 | 2020-07-07 | Adrian Rivera | Brewing chamber cleaner |
AU2016350142B2 (en) * | 2015-11-06 | 2022-06-02 | Cafetto Asia Pte. Ltd. | Cleaning arrangement for capsule based beverage dispensers |
CN106706710A (zh) * | 2015-11-11 | 2017-05-24 | 中国科学院上海微系统与信息技术研究所 | 基于硫掺杂石墨烯的氮氧化物气体传感器及其制备方法 |
DE102016100724A1 (de) * | 2016-01-18 | 2017-07-20 | Miele & Cie. Kg | Getränkeautomat mit automatischer Reinigungsvorrichtung |
US10043672B2 (en) * | 2016-03-29 | 2018-08-07 | Lam Research Corporation | Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask |
US9622616B1 (en) | 2016-03-30 | 2017-04-18 | Eco 2, Llc | Descaling pod for brewing machine |
US20170280929A1 (en) * | 2016-03-30 | 2017-10-05 | Eco 2, Llc | Descaling device for a beverage machine and method of descaling a beverage machine |
US20230180963A1 (en) * | 2016-06-23 | 2023-06-15 | Adrian Rivera | Brewing Machine Cleaner |
US9947558B2 (en) * | 2016-08-12 | 2018-04-17 | Lam Research Corporation | Method for conditioning silicon part |
BR112019008836A2 (pt) | 2016-11-09 | 2019-07-09 | Pepsico Inc | conjuntos de fabricação de bebida carbonatada, métodos, e sistemas |
US10643858B2 (en) | 2017-10-11 | 2020-05-05 | Samsung Electronics Co., Ltd. | Method of etching substrate |
EP3765378A1 (en) * | 2018-03-15 | 2021-01-20 | DSM IP Assets B.V. | Bags-in-bag packaging system |
KR102670420B1 (ko) * | 2018-04-24 | 2024-05-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 카본 하드-마스크의 플라즈마-강화 화학 기상 증착 |
US10985009B2 (en) * | 2018-04-27 | 2021-04-20 | Applied Materials, Inc. | Methods to deposit flowable (gap-fill) carbon containing films using various plasma sources |
TWI804638B (zh) | 2018-06-22 | 2023-06-11 | 日商關東電化工業股份有限公司 | 使用含硫原子之氣體分子之電漿蝕刻方法 |
US10692759B2 (en) * | 2018-07-17 | 2020-06-23 | Applied Materials, Inc. | Methods for manufacturing an interconnect structure for semiconductor devices |
US11837441B2 (en) | 2019-05-29 | 2023-12-05 | Lam Research Corporation | Depositing a carbon hardmask by high power pulsed low frequency RF |
WO2021138006A1 (en) * | 2019-12-31 | 2021-07-08 | Mattson Technology, Inc. | Systems and methods for removal of hardmask |
US20230357921A1 (en) * | 2020-09-29 | 2023-11-09 | Lam Research Corporation | Deposition rate enhancement of amorphous carbon hard mask film by purely chemical means |
Family Cites Families (142)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU382671A1 (ru) | 1971-03-25 | 1973-05-25 | Ю. В. Далаго, В. П. Степанюк , В. А. Черненко Московский машиностроительный завод Знам труда | Способ наполнения газообразным ацетиленом емкостей с растворителями |
US3816976A (en) | 1971-07-15 | 1974-06-18 | Lummus Co | Process for the purification of acetylene and ethylene |
US4209357A (en) | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
US4274841A (en) | 1980-03-28 | 1981-06-23 | Union Carbide Corporation | Acetylene recovery process and apparatus |
JPS6018914U (ja) | 1983-07-15 | 1985-02-08 | 近畿印刷株式会社 | 折り込み紙箱 |
DE3422417A1 (de) | 1984-06-16 | 1985-12-19 | Kernforschungsanlage Jülich GmbH, 5170 Jülich | Verfahren und vorrichtung zur abtrennung einer gaskomponente aus einem gasgemisch durch ausfrieren |
US4673589A (en) | 1986-02-18 | 1987-06-16 | Amoco Corporation | Photoconducting amorphous carbon |
JPS6446098A (en) | 1987-08-07 | 1989-02-20 | Nichigo Acetylen | Method for cleaning inside of container of dissolved acetylene |
US4863760A (en) | 1987-12-04 | 1989-09-05 | Hewlett-Packard Company | High speed chemical vapor deposition process utilizing a reactor having a fiber coating liquid seal and a gas sea; |
US4975144A (en) | 1988-03-22 | 1990-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of plasma etching amorphous carbon films |
US5222549A (en) | 1988-07-04 | 1993-06-29 | Japan Oxygen Co., Ltd. | Condenser/evaporator |
JP2687966B2 (ja) | 1990-08-20 | 1997-12-08 | 富士通株式会社 | 半導体装置の製造方法 |
EP0539559A1 (en) | 1991-04-03 | 1993-05-05 | Eastman Kodak Company | HIGH DURABILITY MASK FOR DRY ETCHING OF GaAs |
US5470661A (en) | 1993-01-07 | 1995-11-28 | International Business Machines Corporation | Diamond-like carbon films from a hydrocarbon helium plasma |
US5261250A (en) | 1993-03-09 | 1993-11-16 | Polycold Systems International | Method and apparatus for recovering multicomponent vapor mixtures |
DE69408405T2 (de) | 1993-11-11 | 1998-08-20 | Nissin Electric Co Ltd | Plasma-CVD-Verfahren und Vorrichtung |
JPH07243064A (ja) | 1994-01-03 | 1995-09-19 | Xerox Corp | 基板清掃方法 |
US6030591A (en) | 1994-04-06 | 2000-02-29 | Atmi Ecosys Corporation | Process for removing and recovering halocarbons from effluent process streams |
ATE251798T1 (de) | 1994-04-28 | 2003-10-15 | Applied Materials Inc | Verfahren zum betreiben eines cvd-reaktors hoher plasma-dichte mit kombinierter induktiver und kapazitiver einkopplung |
JPH08152262A (ja) | 1994-11-29 | 1996-06-11 | Kawasaki Steel Corp | 希ガス分離プロセス用の循環吸着装置 |
US5670066A (en) | 1995-03-17 | 1997-09-23 | Lam Research Corporation | Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated |
US5968379A (en) * | 1995-07-14 | 1999-10-19 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability and related methods |
US5792269A (en) | 1995-10-31 | 1998-08-11 | Applied Materials, Inc. | Gas distribution for CVD systems |
GB9522476D0 (en) | 1995-11-02 | 1996-01-03 | Boc Group Plc | Method and vessel for the storage of gas |
US5985103A (en) | 1995-12-19 | 1999-11-16 | Micron Technology, Inc. | Method for improved bottom and side wall coverage of high aspect ratio features |
CN1264432A (zh) | 1997-06-16 | 2000-08-23 | 罗伯特·博施有限公司 | 基底的真空镀层方法和设备 |
US6150719A (en) | 1997-07-28 | 2000-11-21 | General Electric Company | Amorphous hydrogenated carbon hermetic structure and fabrication method |
US6258170B1 (en) | 1997-09-11 | 2001-07-10 | Applied Materials, Inc. | Vaporization and deposition apparatus |
US6035803A (en) | 1997-09-29 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for controlling the deposition of a fluorinated carbon film |
US6041734A (en) | 1997-12-01 | 2000-03-28 | Applied Materials, Inc. | Use of an asymmetric waveform to control ion bombardment during substrate processing |
TWI246633B (en) | 1997-12-12 | 2006-01-01 | Applied Materials Inc | Method of pattern etching a low k dielectric layen |
US6635185B2 (en) | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
US6387819B1 (en) | 1998-04-29 | 2002-05-14 | Applied Materials, Inc. | Method for etching low K dielectric layers |
JP3568394B2 (ja) * | 1998-07-07 | 2004-09-22 | 独立行政法人 科学技術振興機構 | 低抵抗n型ダイヤモンドの合成法 |
US6331480B1 (en) | 1999-02-18 | 2001-12-18 | Taiwan Semiconductor Manufacturing Company | Method to improve adhesion between an overlying oxide hard mask and an underlying low dielectric constant material |
FR2790762B1 (fr) | 1999-03-09 | 2001-06-01 | Centre Nat Rech Scient | Procede de traitement de surface pour protection et fonctionnalisation des polymeres et produit obtenu selon ce procede |
JP4789035B2 (ja) * | 1999-03-26 | 2011-10-05 | 独立行政法人科学技術振興機構 | n型ダイヤモンドを用いた半導体デバイス |
US6617553B2 (en) | 1999-05-19 | 2003-09-09 | Applied Materials, Inc. | Multi-zone resistive heater |
US6367413B1 (en) | 1999-06-15 | 2002-04-09 | Tokyo Electron Limited | Apparatus for monitoring substrate biasing during plasma processing of a substrate |
US6310366B1 (en) | 1999-06-16 | 2001-10-30 | Micron Technology, Inc. | Retrograde well structure for a CMOS imager |
US6241793B1 (en) | 1999-08-02 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd | Cold trap equipped with curvilinear cooling plate |
US6537741B2 (en) | 1999-11-24 | 2003-03-25 | Nexpress Solutions Llc | Fusing belt for applying a protective overcoat to a photographic element |
US6286321B1 (en) | 2000-01-03 | 2001-09-11 | Thermo Savant, Inc. | Condenser cold trap unit with separate fraction collection feature |
US6422918B1 (en) | 2000-01-04 | 2002-07-23 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing of photoresist layer |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6478924B1 (en) | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
US6319299B1 (en) | 2000-03-30 | 2001-11-20 | Vanguard International Semiconductor Corporation | Adjustable cold trap with different stages |
JP2002194547A (ja) | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
US20040224504A1 (en) | 2000-06-23 | 2004-11-11 | Gadgil Prasad N. | Apparatus and method for plasma enhanced monolayer processing |
JP4559595B2 (ja) | 2000-07-17 | 2010-10-06 | 東京エレクトロン株式会社 | 被処理体の載置装置及びプラズマ処理装置 |
US6645848B2 (en) | 2001-06-01 | 2003-11-11 | Emcore Corporation | Method of improving the fabrication of etched semiconductor devices |
US20030044532A1 (en) | 2001-08-29 | 2003-03-06 | Shyh-Dar Lee | Process for preparing porous low dielectric constant material |
DE10153310A1 (de) | 2001-10-29 | 2003-05-22 | Infineon Technologies Ag | Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte |
US7091137B2 (en) | 2001-12-14 | 2006-08-15 | Applied Materials | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications |
US7226853B2 (en) * | 2001-12-26 | 2007-06-05 | Applied Materials, Inc. | Method of forming a dual damascene structure utilizing a three layer hard mask structure |
US6777349B2 (en) | 2002-03-13 | 2004-08-17 | Novellus Systems, Inc. | Hermetic silicon carbide |
US6541397B1 (en) | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
US6936551B2 (en) | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
WO2003095193A1 (fr) | 2002-05-09 | 2003-11-20 | Riken | Matériau de film mince et procédé de préparation associé |
US6835663B2 (en) | 2002-06-28 | 2004-12-28 | Infineon Technologies Ag | Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity |
US20040018750A1 (en) | 2002-07-02 | 2004-01-29 | Sophie Auguste J.L. | Method for deposition of nitrogen doped silicon carbide films |
US6740535B2 (en) | 2002-07-29 | 2004-05-25 | International Business Machines Corporation | Enhanced T-gate structure for modulation doped field effect transistors |
US6939808B2 (en) | 2002-08-02 | 2005-09-06 | Applied Materials, Inc. | Undoped and fluorinated amorphous carbon film as pattern mask for metal etch |
US6787452B2 (en) | 2002-11-08 | 2004-09-07 | Chartered Semiconductor Manufacturing Ltd. | Use of amorphous carbon as a removable ARC material for dual damascene fabrication |
US20040180551A1 (en) | 2003-03-13 | 2004-09-16 | Biles Peter John | Carbon hard mask for aluminum interconnect fabrication |
FR2853313B1 (fr) | 2003-04-04 | 2005-05-06 | Air Liquide | Procede d'elimination d'un solvant contenu dans l'acetylene, installation pour la mise en oeuvre du procede |
US7205228B2 (en) | 2003-06-03 | 2007-04-17 | Applied Materials, Inc. | Selective metal encapsulation schemes |
US7041600B2 (en) | 2003-06-30 | 2006-05-09 | International Business Machines Corporation | Methods of planarization |
US7030023B2 (en) | 2003-09-04 | 2006-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for simultaneous degas and baking in copper damascene process |
US6967405B1 (en) | 2003-09-24 | 2005-11-22 | Yongsik Yu | Film for copper diffusion barrier |
EP1685606A1 (en) | 2003-11-13 | 2006-08-02 | Philips Intellectual Property & Standards GmbH | Electronic device comprising a protective barrier layer stack |
WO2005069367A1 (ja) | 2004-01-13 | 2005-07-28 | Tokyo Electron Limited | 半導体装置の製造方法および成膜システム |
US7064078B2 (en) | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
US7638440B2 (en) | 2004-03-12 | 2009-12-29 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
WO2005087974A2 (en) | 2004-03-05 | 2005-09-22 | Applied Materials, Inc. | Cvd processes for the deposition of amorphous carbon films |
JP5113982B2 (ja) | 2004-04-23 | 2013-01-09 | トヨタ自動車株式会社 | 金属炭化物粒子が分散した炭素複合材料の製造方法 |
US7384693B2 (en) | 2004-04-28 | 2008-06-10 | Intel Corporation | Diamond-like carbon films with low dielectric constant and high mechanical strength |
US7288484B1 (en) | 2004-07-13 | 2007-10-30 | Novellus Systems, Inc. | Photoresist strip method for low-k dielectrics |
US7220982B2 (en) | 2004-07-27 | 2007-05-22 | Micron Technology, Inc. | Amorphous carbon-based non-volatile memory |
US7202127B2 (en) | 2004-08-27 | 2007-04-10 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7271106B2 (en) | 2004-08-31 | 2007-09-18 | Micron Technology, Inc. | Critical dimension control for integrated circuits |
US7314506B2 (en) | 2004-10-25 | 2008-01-01 | Matheson Tri-Gas, Inc. | Fluid purification system with low temperature purifier |
US7335980B2 (en) | 2004-11-04 | 2008-02-26 | International Business Machines Corporation | Hardmask for reliability of silicon based dielectrics |
US7202176B1 (en) | 2004-12-13 | 2007-04-10 | Novellus Systems, Inc. | Enhanced stripping of low-k films using downstream gas mixing |
WO2006073871A1 (en) | 2004-12-30 | 2006-07-13 | Applied Materials, Inc. | Line edge roughness reduction compatible with trimming |
US7235478B2 (en) | 2005-01-12 | 2007-06-26 | Intel Corporation | Polymer spacer formation |
US7371461B2 (en) | 2005-01-13 | 2008-05-13 | International Business Machines Corporation | Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics |
KR20060098522A (ko) | 2005-03-03 | 2006-09-19 | 삼성전자주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
EP1720072B1 (en) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
JP5203575B2 (ja) | 2005-05-04 | 2013-06-05 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | コーティング組成物 |
US8129281B1 (en) | 2005-05-12 | 2012-03-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
KR100622268B1 (ko) | 2005-07-04 | 2006-09-11 | 한양대학교 산학협력단 | ReRAM 소자용 다층 이원산화박막의 형성방법 |
US7323401B2 (en) | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
US7572572B2 (en) | 2005-09-01 | 2009-08-11 | Micron Technology, Inc. | Methods for forming arrays of small, closely spaced features |
US20070059913A1 (en) | 2005-09-15 | 2007-03-15 | King Sean W | Capping layer to reduce amine poisoning of photoresist layers |
US7432210B2 (en) | 2005-10-05 | 2008-10-07 | Applied Materials, Inc. | Process to open carbon based hardmask |
JP5319868B2 (ja) * | 2005-10-17 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7399712B1 (en) | 2005-10-31 | 2008-07-15 | Novellus Systems, Inc. | Method for etching organic hardmasks |
US8664124B2 (en) | 2005-10-31 | 2014-03-04 | Novellus Systems, Inc. | Method for etching organic hardmasks |
US20070125762A1 (en) | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
KR100735750B1 (ko) | 2005-12-15 | 2007-07-06 | 삼성전자주식회사 | 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들 |
US8110493B1 (en) | 2005-12-23 | 2012-02-07 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
US7381644B1 (en) | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
TWI302349B (en) | 2006-01-04 | 2008-10-21 | Promos Technologies Inc | Metal etching process and rework method thereof |
US20070202640A1 (en) | 2006-02-28 | 2007-08-30 | Applied Materials, Inc. | Low-k spacer integration into CMOS transistors |
US7645357B2 (en) | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
US7981810B1 (en) | 2006-06-08 | 2011-07-19 | Novellus Systems, Inc. | Methods of depositing highly selective transparent ashable hardmask films |
KR100764343B1 (ko) | 2006-09-22 | 2007-10-08 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
KR100855855B1 (ko) | 2006-10-04 | 2008-09-01 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
JP5200371B2 (ja) * | 2006-12-01 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜方法、半導体装置及び記憶媒体 |
US20080128907A1 (en) | 2006-12-01 | 2008-06-05 | International Business Machines Corporation | Semiconductor structure with liner |
US7981777B1 (en) | 2007-02-22 | 2011-07-19 | Novellus Systems, Inc. | Methods of depositing stable and hermetic ashable hardmask films |
US7915166B1 (en) | 2007-02-22 | 2011-03-29 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
US20080242912A1 (en) | 2007-03-29 | 2008-10-02 | Olivier Letessier | Methods and Apparatus for Providing a High Purity Acetylene Product |
US20080264803A1 (en) | 2007-04-20 | 2008-10-30 | Rajat Agrawal | Methods and Apparatus for the Storage of Acetylene in the Absence of Acetone or Dimethylformamide |
KR100871967B1 (ko) | 2007-06-05 | 2008-12-08 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
US8962101B2 (en) | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
US8236476B2 (en) | 2008-01-08 | 2012-08-07 | International Business Machines Corporation | Multiple exposure photolithography methods and photoresist compositions |
US8119853B2 (en) | 2008-01-10 | 2012-02-21 | L'Air Liquide SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Low pressure acetylene storage |
US8133819B2 (en) * | 2008-02-21 | 2012-03-13 | Applied Materials, Inc. | Plasma etching carbonaceous layers with sulfur-based etchants |
US7820556B2 (en) | 2008-06-04 | 2010-10-26 | Novellus Systems, Inc. | Method for purifying acetylene gas for use in semiconductor processes |
US8435608B1 (en) | 2008-06-27 | 2013-05-07 | Novellus Systems, Inc. | Methods of depositing smooth and conformal ashable hard mask films |
US7955990B2 (en) | 2008-12-12 | 2011-06-07 | Novellus Systems, Inc. | Method for improved thickness repeatability of PECVD deposited carbon films |
US7803715B1 (en) | 2008-12-29 | 2010-09-28 | Shai Haimson | Lithographic patterning for sub-90nm with a multi-layered carbon-based hardmask |
AU2010209328B2 (en) * | 2009-01-30 | 2015-07-02 | Ecolab Inc. | Development of an aluminum hydroxycarboxylate builder |
CN102001616A (zh) * | 2009-08-31 | 2011-04-06 | 上海丽恒光微电子科技有限公司 | 装配和封装微型机电系统装置的方法 |
US20110244142A1 (en) | 2010-03-30 | 2011-10-06 | Applied Materials, Inc. | Nitrogen doped amorphous carbon hardmask |
US8563414B1 (en) | 2010-04-23 | 2013-10-22 | Novellus Systems, Inc. | Methods for forming conductive carbon films by PECVD |
JP2013526061A (ja) | 2010-04-30 | 2013-06-20 | アプライド マテリアルズ インコーポレイテッド | スタック欠陥率を改善するアモルファスカーボン堆積法 |
US8361906B2 (en) * | 2010-05-20 | 2013-01-29 | Applied Materials, Inc. | Ultra high selectivity ashable hard mask film |
JP5835587B2 (ja) | 2010-10-14 | 2015-12-24 | 日産化学工業株式会社 | 単分子層又は多分子層形成用組成物 |
US9155418B2 (en) * | 2010-11-15 | 2015-10-13 | Conair Corporation | Brewed beverage appliance and method |
US8541311B2 (en) * | 2010-12-22 | 2013-09-24 | GlobalFoundries, Inc. | Integrated circuit fabrication methods utilizing embedded hardmask layers for high resolution patterning |
EP2525416A2 (en) * | 2011-05-17 | 2012-11-21 | Intevac, Inc. | Method for rear point contact fabrication for solar cells |
EP2604547A1 (en) * | 2011-12-12 | 2013-06-19 | Nestec S.A. | A capsule for descaling a beverage preparation machine |
DE102012011204A1 (de) * | 2012-06-06 | 2013-12-12 | Aquis Wasser-Luft-Systeme Gmbh, Lindau, Zweigniederlassung Rebstein | Reinigerkapsel |
JP2012233259A (ja) * | 2012-06-25 | 2012-11-29 | Tokyo Electron Ltd | アモルファスカーボン膜の成膜方法、それを用いた半導体装置の製造方法、およびコンピュータ読取可能な記憶媒体 |
US8986921B2 (en) | 2013-01-15 | 2015-03-24 | International Business Machines Corporation | Lithographic material stack including a metal-compound hard mask |
US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
US8969207B2 (en) | 2013-03-13 | 2015-03-03 | Globalfoundries Inc. | Methods of forming a masking layer for patterning underlying structures |
US8906802B2 (en) | 2013-03-15 | 2014-12-09 | Globalfoundries Inc. | Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process |
US9589799B2 (en) | 2013-09-30 | 2017-03-07 | Lam Research Corporation | High selectivity and low stress carbon hardmask by pulsed low frequency RF power |
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2014
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- 2014-07-08 US US14/326,344 patent/US20150090300A1/en not_active Abandoned
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CN104517815A (zh) | 2015-04-15 |
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US20150090300A1 (en) | 2015-04-02 |
US9320387B2 (en) | 2016-04-26 |
CN104517815B (zh) | 2017-08-22 |
TWI644361B (zh) | 2018-12-11 |
JP2015070270A (ja) | 2015-04-13 |
KR20150037641A (ko) | 2015-04-08 |
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