KR102269066B1 - 구역-제어식 희토류 산화물 ald 및 cvd 코팅들 - Google Patents

구역-제어식 희토류 산화물 ald 및 cvd 코팅들 Download PDF

Info

Publication number
KR102269066B1
KR102269066B1 KR1020190040339A KR20190040339A KR102269066B1 KR 102269066 B1 KR102269066 B1 KR 102269066B1 KR 1020190040339 A KR1020190040339 A KR 1020190040339A KR 20190040339 A KR20190040339 A KR 20190040339A KR 102269066 B1 KR102269066 B1 KR 102269066B1
Authority
KR
South Korea
Prior art keywords
crystalline
oxide
layer
rare earth
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190040339A
Other languages
English (en)
Korean (ko)
Other versions
KR20190117395A (ko
Inventor
샤오웨이 우
제니퍼 와이. 선
마이클 알. 라이스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20190117395A publication Critical patent/KR20190117395A/ko
Priority to KR1020210079333A priority Critical patent/KR102526653B1/ko
Application granted granted Critical
Publication of KR102269066B1 publication Critical patent/KR102269066B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
    • C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69396—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
KR1020190040339A 2018-04-06 2019-04-05 구역-제어식 희토류 산화물 ald 및 cvd 코팅들 Active KR102269066B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210079333A KR102526653B1 (ko) 2018-04-06 2021-06-18 구역-제어식 희토류 산화물 ald 및 cvd 코팅들

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/947,402 2018-04-06
US15/947,402 US10443126B1 (en) 2018-04-06 2018-04-06 Zone-controlled rare-earth oxide ALD and CVD coatings

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020210079333A Division KR102526653B1 (ko) 2018-04-06 2021-06-18 구역-제어식 희토류 산화물 ald 및 cvd 코팅들

Publications (2)

Publication Number Publication Date
KR20190117395A KR20190117395A (ko) 2019-10-16
KR102269066B1 true KR102269066B1 (ko) 2021-06-23

Family

ID=68096452

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020190040339A Active KR102269066B1 (ko) 2018-04-06 2019-04-05 구역-제어식 희토류 산화물 ald 및 cvd 코팅들
KR1020210079333A Active KR102526653B1 (ko) 2018-04-06 2021-06-18 구역-제어식 희토류 산화물 ald 및 cvd 코팅들
KR1020230053273A Ceased KR20230062496A (ko) 2018-04-06 2023-04-24 구역-제어식 희토류 산화물 ald 및 cvd 코팅들

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020210079333A Active KR102526653B1 (ko) 2018-04-06 2021-06-18 구역-제어식 희토류 산화물 ald 및 cvd 코팅들
KR1020230053273A Ceased KR20230062496A (ko) 2018-04-06 2023-04-24 구역-제어식 희토류 산화물 ald 및 cvd 코팅들

Country Status (5)

Country Link
US (3) US10443126B1 (https=)
JP (3) JP7304192B2 (https=)
KR (3) KR102269066B1 (https=)
CN (4) CN210826347U (https=)
TW (3) TWI753572B (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3423610B1 (en) * 2016-03-04 2022-05-04 Beneq OY A plasma etch-resistant film and a method for its fabrication
US9850573B1 (en) * 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
JP7165748B2 (ja) * 2018-12-05 2022-11-04 京セラ株式会社 プラズマ処理装置用部材およびこれを備えるプラズマ処理装置
JP7249930B2 (ja) * 2019-11-20 2023-03-31 東京エレクトロン株式会社 成膜方法および成膜装置
CN112899617B (zh) 2019-12-04 2023-03-31 中微半导体设备(上海)股份有限公司 形成耐等离子体涂层的方法、装置、零部件和等离子体处理装置
KR102936161B1 (ko) * 2019-12-09 2026-03-09 엔테그리스, 아이엔씨. 다중 장벽 재료로 제조된 확산 장벽, 그리고 관련 물품 및 방법
CN112981360B (zh) * 2019-12-17 2023-01-24 中微半导体设备(上海)股份有限公司 一种微波退火装置和微波退火方法
CN113539771B (zh) * 2020-04-16 2024-04-12 中微半导体设备(上海)股份有限公司 零部件、其表面形成涂层的方法和等离子体反应装置
CN113707525A (zh) * 2020-05-20 2021-11-26 中微半导体设备(上海)股份有限公司 零部件、形成耐等离子体涂层的方法和等离子体反应装置
KR20230027281A (ko) * 2020-06-25 2023-02-27 램 리써치 코포레이션 반도체 프로세싱 챔버를 위한 매칭된 화학 물질 컴포넌트 바디 및 코팅
CN114068274B (zh) * 2020-08-03 2025-01-07 中微半导体设备(上海)股份有限公司 半导体零部件、等离子体处理装置及耐腐蚀涂层形成方法
US12592364B2 (en) 2020-08-03 2026-03-31 Applied Materials, Inc. Fluoride coating to improve chamber performance
CN114639584B (zh) * 2020-12-15 2024-12-06 中微半导体设备(上海)股份有限公司 半导体零部件、等离子体处理装置及形成复合涂层的方法
CN114664623B (zh) * 2020-12-23 2024-12-10 中微半导体设备(上海)股份有限公司 耐等离子体腐蚀半导体零部件及其制备方法和等离子体反应装置
TWI807253B (zh) * 2021-01-29 2023-07-01 優材科技有限公司 半導體反應裝置與反應方法
JP7699217B2 (ja) * 2021-03-19 2025-06-26 インテグリス・インコーポレーテッド フッ素化イットリウムコーティングを有する基材、ならびに基材を製造および使用する方法
FI130562B (en) * 2021-05-21 2023-11-21 Picosun Oy Plasma resistant coating, related manufacturing process and uses
US11742416B2 (en) * 2021-05-27 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US20220384290A1 (en) * 2021-06-01 2022-12-01 Wolfspeed, Inc. Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methods
JP7668168B2 (ja) * 2021-06-22 2025-04-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ内の部品を再生する方法
JP2023124884A (ja) * 2022-02-26 2023-09-07 Toto株式会社 複合構造物および複合構造物を備えた半導体製造装置
US12049697B2 (en) * 2022-08-08 2024-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Multilayer ALD coating for critical components in process chamber
US12486571B2 (en) 2022-10-07 2025-12-02 Applied Materials, Inc. Atomic layer deposition coating system for inner walls of gas lines
CN116065115A (zh) * 2023-01-30 2023-05-05 福建阿石创新材料股份有限公司 一种Y2O3-YAlO3复合材料及其制备方法和应用
US12404584B2 (en) 2023-07-18 2025-09-02 Applied Materials, Inc. Parallel atomic layer deposition of target element interiors
WO2025159165A1 (ja) * 2024-01-25 2025-07-31 京セラ株式会社 耐食性部材
CN119663213B (zh) * 2025-02-19 2025-05-16 武汉工程大学 一种适用于刻蚀机零部件的y2o3-bzo复合涂层的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001355070A (ja) * 2000-04-14 2001-12-25 Asm Microchemistry Oy 酸化物薄膜を製造する方法
US20110014359A1 (en) * 2008-04-23 2011-01-20 Imran Hashim Yttrium and Titanium High-K Dielectric Film

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03115535A (ja) 1989-09-28 1991-05-16 Nippon Mining Co Ltd 希土類金属の酸素低減方法
US5805973A (en) 1991-03-25 1998-09-08 General Electric Company Coated articles and method for the prevention of fuel thermal degradation deposits
US5630314A (en) 1992-09-10 1997-05-20 Hitachi, Ltd. Thermal stress relaxation type ceramic coated heat-resistant element
JP3362113B2 (ja) 1997-07-15 2003-01-07 日本碍子株式会社 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法
JP3510993B2 (ja) 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
US7384438B1 (en) 2000-07-19 2008-06-10 3M Innovative Properties Company Fused Al2O3-Y2O3-ZrO2 eutectic abrasive particles, abrasive articles, and methods of making and using the same
US6685991B2 (en) 2000-07-31 2004-02-03 Shin-Etsu Chemical Co., Ltd. Method for formation of thermal-spray coating layer of rare earth fluoride
JP5290488B2 (ja) * 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
US6916534B2 (en) 2001-03-08 2005-07-12 Shin-Etsu Chemical Co., Ltd. Thermal spray spherical particles, and sprayed components
JP2002356387A (ja) 2001-03-30 2002-12-13 Toshiba Ceramics Co Ltd 耐プラズマ性部材
JP4277973B2 (ja) 2001-07-19 2009-06-10 日本碍子株式会社 イットリア−アルミナ複合酸化物膜の製造方法、イットリア−アルミナ複合酸化物膜および耐蝕性部材
US8357454B2 (en) 2001-08-02 2013-01-22 Siemens Energy, Inc. Segmented thermal barrier coating
JP4921652B2 (ja) * 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US20030029563A1 (en) 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US20080213496A1 (en) 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
JP2003277051A (ja) 2002-03-22 2003-10-02 Ngk Insulators Ltd イットリア−アルミナ複合酸化物膜を有する積層体、イットリア−アルミナ複合酸化物膜、耐蝕性部材、耐蝕性膜およびイットリア−アルミナ複合酸化物膜の製造方法
DE60319470T2 (de) 2002-08-02 2009-03-26 Fujikura Ltd. Herstellungsverfahren für einen polykristallinen Dünnfilm und Herstellungsverfahren für ein Oxidsupraleiter-Bauelement
KR100772740B1 (ko) 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
US7560376B2 (en) 2003-03-31 2009-07-14 Tokyo Electron Limited Method for adjoining adjacent coatings on a processing element
CN1288108C (zh) 2003-10-24 2006-12-06 东芝陶瓷股份有限会社 耐等离子体构件、其制造方法及形成热喷涂涂层的方法
JP4606121B2 (ja) 2004-01-29 2011-01-05 京セラ株式会社 耐食膜積層耐食性部材およびその製造方法
US7291403B2 (en) * 2004-02-03 2007-11-06 General Electric Company Thermal barrier coating system
KR100855531B1 (ko) * 2004-04-13 2008-09-01 어플라이드 머티어리얼스, 인코포레이티드 전기 도금된 이트륨 함유 코팅을 갖는 프로세스 챔버 요소
JP2006082474A (ja) 2004-09-17 2006-03-30 Tosoh Corp 樹脂部材
JP2006186306A (ja) 2004-09-30 2006-07-13 Toshiba Ceramics Co Ltd ガス拡散プレートおよびその製造方法
KR101226120B1 (ko) 2004-10-26 2013-01-24 쿄세라 코포레이션 내식성 부재 및 그 제조방법
KR100915722B1 (ko) 2005-06-23 2009-09-04 도쿄엘렉트론가부시키가이샤 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
US7968205B2 (en) 2005-10-21 2011-06-28 Shin-Etsu Chemical Co., Ltd. Corrosion resistant multilayer member
JP2007217782A (ja) 2006-02-20 2007-08-30 Showa Denko Kk 希土類元素のフッ化物皮膜を有する耐食性皮膜およびその製造方法
JP4546447B2 (ja) 2006-12-22 2010-09-15 トーカロ株式会社 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法
JP5252613B2 (ja) 2006-12-25 2013-07-31 国立大学法人東北大学 イオン注入装置およびイオン注入方法
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US7696117B2 (en) 2007-04-27 2010-04-13 Applied Materials, Inc. Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
CN101577211B (zh) * 2008-05-09 2011-07-20 中微半导体设备(上海)有限公司 抗等离子体腐蚀的反应室部件、其制造方法以及包含该部件的等离子体反应室
US8206829B2 (en) 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US9017765B2 (en) 2008-11-12 2015-04-28 Applied Materials, Inc. Protective coatings resistant to reactive plasma processing
US8858745B2 (en) 2008-11-12 2014-10-14 Applied Materials, Inc. Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas
US8470460B2 (en) * 2008-11-25 2013-06-25 Rolls-Royce Corporation Multilayer thermal barrier coatings
TW201100578A (en) 2009-06-19 2011-01-01 Saint Gobain Ceramics & Plastics Inc Sealed plasma coatings
US8449994B2 (en) 2009-06-30 2013-05-28 Honeywell International Inc. Turbine engine components
WO2011049938A2 (en) 2009-10-20 2011-04-28 Saint-Gobain Ceramics & Plastics, Inc. Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
DE102010015470A1 (de) * 2010-04-16 2011-10-20 Forschungszentrum Jülich GmbH Verfahren zur Innenbeschichtung von Funktionsschichten mit einem Vergütungsmaterial
TW201209957A (en) 2010-05-28 2012-03-01 Praxair Technology Inc Substrate supports for semiconductor applications
US20120103519A1 (en) * 2010-10-25 2012-05-03 Greene, Tweed Of Delaware, Inc. Plasma Etch Resistant, Highly Oriented Yttria Films, Coated Substrates and Related Methods
US8916021B2 (en) 2010-10-27 2014-12-23 Applied Materials, Inc. Electrostatic chuck and showerhead with enhanced thermal properties and methods of making thereof
KR20130025025A (ko) 2011-09-01 2013-03-11 주식회사 코미코 정전척
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
KR101637801B1 (ko) 2012-05-22 2016-07-07 가부시끼가이샤 도시바 플라즈마 처리 장치용 부품 및 플라즈마 처리 장치용 부품의 제조 방법
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
CN103794458B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于等离子体处理腔室内部的部件及制造方法
CN103794445B (zh) 2012-10-29 2016-03-16 中微半导体设备(上海)有限公司 用于等离子体处理腔室的静电夹盘组件及制造方法
CN103794460B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
JP5578383B2 (ja) * 2012-12-28 2014-08-27 Ｔｏｔｏ株式会社 耐プラズマ性部材
US9850568B2 (en) * 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9624593B2 (en) 2013-08-29 2017-04-18 Applied Materials, Inc. Anodization architecture for electro-plate adhesion
US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
CN104711541A (zh) * 2013-12-11 2015-06-17 北京有色金属研究总院 一种氧化锆和氧化铝梯度复合涂层及其制备方法
CN107078086B (zh) 2014-02-07 2021-01-26 恩特格里斯公司 静电夹具以及制造其之方法
JPWO2015151857A1 (ja) 2014-03-31 2017-04-13 株式会社東芝 耐プラズマ部品及び耐プラズマ部品の製造方法及び耐プラズマ部品の製造に用いる膜堆積装置
US20150311043A1 (en) 2014-04-25 2015-10-29 Applied Materials, Inc. Chamber component with fluorinated thin film coating
US9976211B2 (en) * 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US9551070B2 (en) 2014-05-30 2017-01-24 Applied Materials, Inc. In-situ corrosion resistant substrate support coating
CN105225997B (zh) 2014-06-12 2018-01-23 中微半导体设备(上海)有限公司 一种静电夹盘及静电夹盘的制造方法
KR20160030812A (ko) 2014-09-11 2016-03-21 삼성전자주식회사 플라즈마 처리 장치
KR102182699B1 (ko) 2014-11-11 2020-11-25 (주) 코미코 플라즈마 처리 장치용 내부재 및 이의 제조 방법
US10141582B2 (en) 2014-12-22 2018-11-27 Sonata Scientific LLC SOFC interconnect barriers and methods of making same
CN105990081B (zh) 2015-02-09 2018-09-21 中微半导体设备(上海)有限公司 等离子体处理装置及其制作方法
SG11201706564UA (en) 2015-02-13 2017-09-28 Entegris Inc Coatings for enhancement of properties and performance of substrate articles and apparatus
CN107532283B (zh) 2015-03-18 2021-01-15 恩特格里斯公司 涂覆有氟退火膜的物件
US9790582B2 (en) 2015-04-27 2017-10-17 Lam Research Corporation Long lifetime thermal spray coating for etching or deposition chamber application
US20160379806A1 (en) 2015-06-25 2016-12-29 Lam Research Corporation Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers
US20160375515A1 (en) 2015-06-29 2016-12-29 Lam Research Corporation Use of atomic layer deposition coatings to protect brazing line against corrosion, erosion, and arcing
KR101916872B1 (ko) 2015-10-15 2018-11-08 아이원스 주식회사 반도체 공정 장비 부품의 코팅층 재생 방법 및 이에 따른 반도체 공정 장비 부품
JP2017092156A (ja) 2015-11-03 2017-05-25 ナショナル チュン−シャン インスティテュート オブ サイエンス アンド テクノロジー 高密度のプラズマ及び高温の半導体製造プロセスに用いられる窒化アルミニウムの静電チャンク
EP3423610B1 (en) 2016-03-04 2022-05-04 Beneq OY A plasma etch-resistant film and a method for its fabrication
US11326253B2 (en) * 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
US11180847B2 (en) 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
KR20230088721A (ko) 2020-10-15 2023-06-20 헤레우스 코나믹 노스 아메리카 엘엘씨 다층 소결 세라믹체 및 제조 방법
US12439625B2 (en) 2022-05-23 2025-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001355070A (ja) * 2000-04-14 2001-12-25 Asm Microchemistry Oy 酸化物薄膜を製造する方法
US20110014359A1 (en) * 2008-04-23 2011-01-20 Imran Hashim Yttrium and Titanium High-K Dielectric Film

Also Published As

Publication number Publication date
US20190382888A1 (en) 2019-12-19
US12049696B2 (en) 2024-07-30
KR102526653B1 (ko) 2023-04-26
JP2025084962A (ja) 2025-06-03
TWI799018B (zh) 2023-04-11
KR20210077663A (ko) 2021-06-25
CN114672787A (zh) 2022-06-28
CN114672787B (zh) 2024-02-23
US12209307B2 (en) 2025-01-28
US10443126B1 (en) 2019-10-15
TW202212613A (zh) 2022-04-01
CN210826347U (zh) 2020-06-23
US20210301395A1 (en) 2021-09-30
CN110344024A (zh) 2019-10-18
CN110344024B (zh) 2022-04-08
JP2019183278A (ja) 2019-10-24
TWI753572B (zh) 2022-01-21
JP7304192B2 (ja) 2023-07-06
TWI707977B (zh) 2020-10-21
TW201945576A (zh) 2019-12-01
US20190309413A1 (en) 2019-10-10
JP2023120395A (ja) 2023-08-29
TW202117057A (zh) 2021-05-01
KR20190117395A (ko) 2019-10-16
CN114921770A (zh) 2022-08-19
KR20230062496A (ko) 2023-05-09

Similar Documents

Publication Publication Date Title
KR102526653B1 (ko) 구역-제어식 희토류 산화물 ald 및 cvd 코팅들
US11251023B2 (en) Multi-layer plasma resistant coating by atomic layer deposition
US10745805B2 (en) Plasma resistant coating of porous body by atomic layer deposition
US20230286867A1 (en) Erosion resistant metal oxide coatings deposited by atomic layer deposition
CN110735128B (zh) 通过原子层沉积来沉积的抗侵蚀金属氟化物涂层
US20240401197A1 (en) Erosion resistant metal fluoride coatings deposited by atomic layer deposition

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
GRNT Written decision to grant
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R17 Change to representative recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R17-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 5