KR102267918B1 - 박리되고, 결합이 없고 산화되지 않은 2차원 물질을 다량으로 제조하기 위한 확장가능한 방법 - Google Patents

박리되고, 결합이 없고 산화되지 않은 2차원 물질을 다량으로 제조하기 위한 확장가능한 방법 Download PDF

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KR102267918B1
KR102267918B1 KR1020157027324A KR20157027324A KR102267918B1 KR 102267918 B1 KR102267918 B1 KR 102267918B1 KR 1020157027324 A KR1020157027324 A KR 1020157027324A KR 20157027324 A KR20157027324 A KR 20157027324A KR 102267918 B1 KR102267918 B1 KR 102267918B1
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graphene
dimensional
manufacturing
dimensional material
exfoliated
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KR20160023639A (ko
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조나단 코울만
키이스 파톤
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더 프로보스트, 펠로우스, 파운데이션 스콜라스, 앤드 디 아더 멤버스 오브 보오드 오브 더 칼리지 오브 더 홀리 앤드 언디바이디드 트리니티 오브 퀸 엘리자베스 니어 더블린
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KR1020157027324A 2013-03-14 2014-03-14 박리되고, 결합이 없고 산화되지 않은 2차원 물질을 다량으로 제조하기 위한 확장가능한 방법 KR102267918B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361786068P 2013-03-14 2013-03-14
US61/786,068 2013-03-14
GB1304770.9 2013-03-15
GB201304770A GB201304770D0 (en) 2013-03-15 2013-03-15 A scalable process for producing exfoliated defect-free, non-oxidised 2-dimens ional materials in large quantities
PCT/EP2014/055183 WO2014140324A1 (fr) 2013-03-14 2014-03-14 Procédé évolutif de production de matériaux bidimensionnels sans défaut, non oxydés exfoliés en grandes quantités

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KR20160023639A KR20160023639A (ko) 2016-03-03
KR102267918B1 true KR102267918B1 (ko) 2021-06-22

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US (1) US10304937B2 (fr)
EP (1) EP2969943B1 (fr)
JP (1) JP6496253B2 (fr)
KR (1) KR102267918B1 (fr)
CN (1) CN105263858B (fr)
GB (1) GB201304770D0 (fr)
WO (1) WO2014140324A1 (fr)

Cited By (1)

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KR20230090618A (ko) * 2021-12-15 2023-06-22 (주)플로우테크 고품질의 그래핀을 대량으로 제조하는 방법

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102398191B1 (ko) 2012-10-19 2022-05-16 럿거스, 더 스테이트 유니버시티 오브 뉴저지 그래핀으로 강화된 고분자 매트릭스 복합체를 제조하기 위한 인 시츄 박리방법
US11479652B2 (en) 2012-10-19 2022-10-25 Rutgers, The State University Of New Jersey Covalent conjugates of graphene nanoparticles and polymer chains and composite materials formed therefrom
CN105324241B (zh) 2013-04-18 2017-06-13 新泽西鲁特格斯州立大学 制备石墨烯增强的聚合物基质复合材料的原位剥离方法
CN107074552A (zh) 2014-07-30 2017-08-18 新泽西鲁特格斯州立大学 石墨烯增强的聚合物基质复合材料
GB201416317D0 (en) * 2014-09-16 2014-10-29 Swan Thomas & Co Ltd Two-dimensional materials
ES2529189A1 (es) * 2014-11-07 2015-02-17 Eficiencia Energética Aplicada S.L. Método de preparación de material grafénico, material grafénico obtenido, método de preparación de una dispersión estable, dispersión estable obtenida y uso
CA2911707C (fr) 2014-11-11 2021-08-10 Rutgers, The State University Of New Jersey Composition derivee de peinture recyclee
CN107250236A (zh) * 2014-12-22 2017-10-13 瑞来斯实业公司 树脂中的石墨剥离
EP3070053B1 (fr) 2015-03-17 2018-02-28 Graphenea, S.A. Procédé d'obtention d'oxyde de graphène
WO2017025926A1 (fr) * 2015-08-11 2017-02-16 Graphenest, S.A. Procédé et dispositif de fabrication de graphène ou de matériaux similaires au graphène
EP3367479B1 (fr) * 2015-09-18 2020-07-08 Toray Industries, Inc. Dispersion de graphène/solvant organique et son procédé de production et procédé de production d'électrode de batterie lithium-ion
US10636586B2 (en) 2015-09-18 2020-04-28 Toray Industries, Inc. Graphene dispersion, process for producing same, process for producing particles of graphene/active material composite, and process for producing electrode paste
EP3358650B1 (fr) * 2015-09-18 2020-08-26 Toray Industries, Inc. Dispersion de graphène, procédé de production de particules de composite graphène/matériau actif, et procédé de production de pâte d'électrode
GB2543486B (en) 2015-10-13 2018-07-18 Swan Thomas & Co Ltd Apparatus and method of using the apparatus for bulk production of atomically thin 2-dimensional materials including graphene
EP3202848B1 (fr) 2015-10-27 2021-03-17 Jinan Shengquan Group Share Holding Co., Ltd. Matériau composite de polyester, fibre composite de polyester, leur procédé de préparation et d'utilisation
GB2544797B (en) * 2015-11-27 2020-04-29 Swan Thomas & Co Ltd Separation process for laminar materials, such as graphene
CN105600777B (zh) * 2016-01-29 2017-07-28 北京理工大学 一种聚苯乙烯修饰的三维石墨烯泡沫的制备方法
CN105621404B (zh) * 2016-02-19 2017-12-22 成都新柯力化工科技有限公司 一种通过粘性机械剪切剥离制备石墨烯微片的方法
CN105800545B (zh) * 2016-03-18 2019-01-18 北京化工大学 一种剥离制备二维材料的方法
US10913035B2 (en) * 2016-04-06 2021-02-09 The University Of Manchester Laminate membranes comprising a two-dimensional layer comprising polyaromatic functionalities
CN105895913B (zh) * 2016-05-04 2019-08-16 北京化工大学 一种制备二维材料的方法
US10059585B2 (en) * 2016-06-28 2018-08-28 Nanoco Technologies Ltd. Formation of 2D flakes from chemical cutting of prefabricated nanoparticles and van der Waals heterostructure devices made using the same
CN106219608B (zh) * 2016-07-06 2017-11-21 中山大学 一种二维材料的制备方法
GB2565964B (en) 2016-07-22 2021-10-06 Siemens Ag Electrical component and method
US11059945B2 (en) 2016-07-22 2021-07-13 Rutgers, The State University Of New Jersey In situ bonding of carbon fibers and nanotubes to polymer matrices
US11702518B2 (en) 2016-07-22 2023-07-18 Rutgers, The State University Of New Jersey In situ bonding of carbon fibers and nanotubes to polymer matrices
AU2017335685B2 (en) * 2016-09-30 2022-09-29 The Regents Of The University Of California Continuous production of exfoliated 2D layered materials by compressive flow
CN106548875A (zh) * 2016-11-03 2017-03-29 东华大学 一种全固态柔性透明超级电容器及其制备和应用
JP6772040B2 (ja) * 2016-11-21 2020-10-21 大阪瓦斯株式会社 薄片状カーボンの製造方法
CN106744875A (zh) * 2016-12-12 2017-05-31 广东纳路纳米科技有限公司 一种球磨剥离白石墨烯的方法
KR102455147B1 (ko) * 2016-12-19 2022-10-17 가부시키가이샤 아데카 층상 물질 함유액 및 그 제조 방법
CN108249427B (zh) * 2016-12-29 2021-05-25 中国科学院上海硅酸盐研究所 一种微波结合溶胶-凝胶工艺制备石墨烯薄膜的方法
JP6809483B2 (ja) * 2017-03-13 2021-01-06 東レ株式会社 二次電池用電極
CN107139573B (zh) * 2017-04-01 2019-04-23 浙江海洋大学 一种高效剥离二维材料的方法及装置
KR101992466B1 (ko) * 2017-05-25 2019-06-24 한국과학기술원 삼성분계 흑연 층간삽입 화합물을 이용한 그래핀의 제조 방법
US11772976B2 (en) 2017-07-13 2023-10-03 Carbon Upcycling Technologies Inc. Mechanochemical process to produce exfoliated nanoparticles
CN107555423B (zh) * 2017-08-29 2019-12-27 雅迪科技集团有限公司 一种用于制备二维纳米材料的剥离溶液及其应用
KR102469184B1 (ko) 2017-10-27 2022-11-18 삼성전자주식회사 세라믹 전자 부품 및 그 제조 방법과 전자장치
GB201720494D0 (en) * 2017-12-08 2018-01-24 Ucl Business Plc Graphene production method
CN109950479A (zh) * 2017-12-21 2019-06-28 中国科学院上海硅酸盐研究所 一种三维多孔结构石墨烯/硫复合正极材料及其制备方法
WO2019119351A1 (fr) * 2017-12-21 2019-06-27 惠州拓邦电气技术有限公司 Matériau d'électrode négative de batterie au lithium-ion et son procédé de préparation, et batterie au lithium-ion
GB201800249D0 (en) 2018-01-08 2018-02-21 Univ Of Sussex Pickering emulsions
US11479653B2 (en) 2018-01-16 2022-10-25 Rutgers, The State University Of New Jersey Use of graphene-polymer composites to improve barrier resistance of polymers to liquid and gas permeants
GB201801480D0 (en) 2018-01-30 2018-03-14 Anaphite Ltd Process for producing composite material
CN108675286A (zh) * 2018-07-11 2018-10-19 天津工业大学 高效剥离石墨粉制备功能化石墨烯的方法
US11572280B2 (en) * 2018-08-02 2023-02-07 Global Graphene Group, Inc. Environmentally benign production of graphene suspensions
CN108946817B (zh) * 2018-08-10 2021-03-16 陕西科技大学 一种通过液氮冷冻剥离δ-MnO2获得纳米片的方法
EP3636592A1 (fr) 2018-10-12 2020-04-15 Advanced Material Development Limited Nanomatériaux exfoliés par liquide
DE202018106258U1 (de) 2018-10-15 2020-01-20 Rutgers, The State University Of New Jersey Nano-Graphitische Schwämme
CN109231176A (zh) * 2018-11-05 2019-01-18 深圳大学 一种碲化铂纳米片及其制备方法
CA3119769A1 (fr) 2018-11-20 2020-05-28 The Lubrizol Corporation Production et composition de graphene
TWI797404B (zh) * 2018-12-18 2023-04-01 日商住友電木股份有限公司 Lds 用熱固性樹脂組成物及半導體裝置之製造方法
CN109721104B (zh) * 2018-12-28 2022-07-05 湖南大学 一种层状材料的刻蚀剥离方法
US10875773B2 (en) * 2019-04-11 2020-12-29 Cornell University Method for storage or transportation of graphene oxide
US11807757B2 (en) 2019-05-07 2023-11-07 Rutgers, The State University Of New Jersey Economical multi-scale reinforced composites
CN110065932B (zh) * 2019-05-15 2022-10-28 中国科学技术大学 一种锂插入式硒类化合物、其制备方法及应用
CN110193329B (zh) * 2019-05-17 2021-04-30 葛志强 一种超重力耦合制备二维纳米材料的装置
CN110330675A (zh) * 2019-06-19 2019-10-15 天津市职业大学 一种压敏薄膜的制备方法、压敏薄膜及压力传感器
KR102251201B1 (ko) * 2019-07-09 2021-05-11 중앙대학교 산학협력단 박리된 보론나이트라이드, 이의 박리방법, 및 이를 이용한 고분자 방열 복합체의 제조방법
CN110385045B (zh) * 2019-07-10 2021-08-10 浙江海印数码科技有限公司 一种数码喷墨墨水制备过程中的高效除盐方法
GB201911629D0 (en) 2019-08-14 2019-09-25 Univ Of Sussex Materials and methods
CN112678826B (zh) * 2019-10-18 2022-12-09 济南三川新材料科技有限公司 二维过渡金属硫族化合物的合成方法
US10953380B1 (en) * 2019-10-21 2021-03-23 Global Graphene Group, Inc. Continuous production of 2D inorganic compound platelets
CN110921638A (zh) * 2019-10-31 2020-03-27 北京化工大学 一种水相剪切法制备改性氮化硼纳米片的方法
CN110734056B (zh) * 2019-11-25 2024-05-10 江苏福华环境工程设备有限公司 一种石墨烯加工设备
CN111186823B (zh) * 2020-02-19 2022-02-11 清华-伯克利深圳学院筹备办公室 聚合物辅助制备二维材料及其复合材料的方法
EP3875429A1 (fr) 2020-03-03 2021-09-08 Avanzare Innovacion Tencologica S.L. Procédure pour produire du graphène et des matériaux graphéniques
EP3917879B1 (fr) 2020-04-09 2023-06-28 2D Fab Ab Fabrication de matière bidimensionnelle
CN111560127B (zh) * 2020-05-19 2021-11-23 江南大学 剥离六方氮化硼粉末制备氮化硼纳米片用于制备bnns-纤维素复合材料的方法
CN111908434B (zh) * 2020-07-16 2023-08-18 北京理工大学 一种过渡金属硫族化合物纳米片水相分散液的制备方法
WO2022090726A1 (fr) 2020-10-29 2022-05-05 The University Of Sussex Compositions détectables par effet raman comprenant des matériaux 2d
CN112499684B (zh) * 2020-12-04 2022-11-08 合肥工业大学 一种基于离子斥力作用分散剥离多层wo3纳米片的方法
CN112687774B (zh) * 2020-12-11 2022-04-15 华灿光电（浙江）有限公司 发光二极管外延片及其制备方法
CN112635594A (zh) * 2020-12-18 2021-04-09 西安电子科技大学 基于极性J-TMDs/β-Ga2O3异质结的高速光电子器件及其制备方法
CN112777588B (zh) * 2021-01-27 2022-10-18 广东邦普循环科技有限公司 机械剥离制备石墨烯的方法及其应用
JPWO2023032602A1 (fr) * 2021-08-31 2023-03-09
CN113772732B (zh) * 2021-09-26 2022-05-06 江南大学 一种利用deet剥离制备二维材料纳米片的方法
CN114148994B (zh) * 2021-11-17 2023-08-29 中北大学 一种柔性Bi2O2Se基电极材料及其制备方法和应用
WO2023166296A1 (fr) 2022-03-03 2023-09-07 The University Of Sussex Capsules comprenant un polymère réticulé et des matériaux 1d ou 2d
CN114613949B (zh) * 2022-05-10 2022-08-09 中博龙辉装备集团股份有限公司 一种表面改性氯氮化钛电极材料及其制备方法
CN114988785A (zh) * 2022-05-31 2022-09-02 深圳大学 纳流体改性有机纤维增强混凝土及优化设计方法
CN115231610B (zh) * 2022-08-04 2023-06-06 苏州大学 一种二维纳米片及其制备方法
KR102530524B1 (ko) 2022-08-19 2023-05-10 이승민 건식 박리를 통한 2차원 물질의 제조방법 및 이를 이용하여 제조된 2차원 물질
US11801514B1 (en) 2023-02-10 2023-10-31 CR Nano, Inc. Mechanochemical production of tunable planar materials
WO2024181933A1 (fr) * 2023-02-27 2024-09-06 Centrum Pre Vyuzitie Pokrocilych Materialov Slovenskej Akademie Vied, Verejna Vyskumna Institucia Méthode d'exfoliation en phase liquide et milieu exfoliant
KR102611645B1 (ko) 2023-05-03 2023-12-08 이승민 건식 박리를 통한 2차원 물질의 제조방법 및 이를 이용하여 제조된 2차원 물질

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4139792B2 (ja) 2003-09-12 2008-08-27 ニッポン・ペイント（ユーエスエイ），インコーポレーテッド プラスチックをコーティングするためのナノクレーで改質された水系組成物、およびその製造方法
CN101704520A (zh) 2009-11-05 2010-05-12 华侨大学 一种生产石墨烯的方法
WO2011014347A1 (fr) 2009-07-27 2011-02-03 Aruna Zhamu Production en série de nanomatériaux au graphène pur
WO2012028724A1 (fr) 2010-09-03 2012-03-08 The Provost, Fellows, Foundation Scholars, And The Other Members Of Board, Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth, Near Dublin Procédé de croissance atomique de cristaux et de couches minces
WO2012101457A1 (fr) 2011-01-28 2012-08-02 Isis Innovation Limited Exfoliation de matériaux stratifiés
WO2013010211A1 (fr) * 2011-07-19 2013-01-24 The Australian National University Exfoliation de matériau laminaire par ultrasonication dans un tensioactif

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186919A (en) * 1988-11-21 1993-02-16 Battelle Memorial Institute Method for producing thin graphite flakes with large aspect ratios
US8132746B2 (en) 2007-04-17 2012-03-13 Nanotek Instruments, Inc. Low-temperature method of producing nano-scaled graphene platelets and their nanocomposites
US7906053B1 (en) 2008-02-21 2011-03-15 Northwestern University Polymer-graphite nanocomposites via solid-state shear pulverization
US8968695B2 (en) * 2009-08-10 2015-03-03 Idt International Co., Ltd. Method of producing nano-size graphene-based material and an equipment for producing the same
JP5435559B2 (ja) 2009-10-08 2014-03-05 独立行政法人物質・材料研究機構 超薄窒化ホウ素ナノシートの製造方法
CN101671015B (zh) 2009-10-13 2011-07-20 南昌航空大学 一种石墨烯材料的生产方法
KR101161300B1 (ko) 2009-12-30 2012-07-04 한국수력원자력 주식회사 유기용매를 이용한 그래핀 제조방법 및 이에 따라 제조되는 그래핀
EP2625716A4 (fr) * 2010-10-10 2017-12-27 The Trustees of Princeton University Électrodes en graphène pour cellules solaires
GB201103499D0 (en) * 2011-03-01 2011-04-13 Univ Ulster Process
CN102583332B (zh) 2012-01-17 2013-11-06 北京航空航天大学 一种在液相中制备石墨烯所用溶液的制备工艺及方法
CN102583350B (zh) 2012-02-28 2013-11-20 中国科学院合肥物质科学研究院 一种石墨烯材料的制备方法
CN102701190A (zh) 2012-05-31 2012-10-03 格雷菲尼（北京）科技有限公司 一种在水和丙酮混合溶液中制备石墨烯的工艺及方法
DE102012109404A1 (de) * 2012-10-02 2014-04-03 Byk-Chemie Gmbh Graphen-haltige Suspension, Verfahren zu deren Herstellung, Graphenplättchen und Verwendung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4139792B2 (ja) 2003-09-12 2008-08-27 ニッポン・ペイント（ユーエスエイ），インコーポレーテッド プラスチックをコーティングするためのナノクレーで改質された水系組成物、およびその製造方法
WO2011014347A1 (fr) 2009-07-27 2011-02-03 Aruna Zhamu Production en série de nanomatériaux au graphène pur
CN101704520A (zh) 2009-11-05 2010-05-12 华侨大学 一种生产石墨烯的方法
WO2012028724A1 (fr) 2010-09-03 2012-03-08 The Provost, Fellows, Foundation Scholars, And The Other Members Of Board, Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth, Near Dublin Procédé de croissance atomique de cristaux et de couches minces
WO2012101457A1 (fr) 2011-01-28 2012-08-02 Isis Innovation Limited Exfoliation de matériaux stratifiés
WO2013010211A1 (fr) * 2011-07-19 2013-01-24 The Australian National University Exfoliation de matériau laminaire par ultrasonication dans un tensioactif

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. Mater. Chem. 2010, Vol. 20, pp. 5817-5819 (2010.06.17.)*

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230090618A (ko) * 2021-12-15 2023-06-22 (주)플로우테크 고품질의 그래핀을 대량으로 제조하는 방법
KR102654623B1 (ko) * 2021-12-15 2024-04-04 (주)플로우테크 고품질의 그래핀을 대량으로 제조하는 방법

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