KR102244625B1 - 온도 프로파일 제어를 갖는 가열식 기판 지지부 - Google Patents

온도 프로파일 제어를 갖는 가열식 기판 지지부 Download PDF

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KR102244625B1
KR102244625B1 KR1020167009634A KR20167009634A KR102244625B1 KR 102244625 B1 KR102244625 B1 KR 102244625B1 KR 1020167009634 A KR1020167009634 A KR 1020167009634A KR 20167009634 A KR20167009634 A KR 20167009634A KR 102244625 B1 KR102244625 B1 KR 102244625B1
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South Korea
Prior art keywords
shaft
plate
heater
substrate support
layer
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KR1020167009634A
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Korean (ko)
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KR20160055257A (ko
Inventor
니르 메리
레온 볼포브스키
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49083—Heater type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
  • Physical Vapour Deposition (AREA)
KR1020167009634A 2013-09-16 2014-09-10 온도 프로파일 제어를 갖는 가열식 기판 지지부 Active KR102244625B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361878370P 2013-09-16 2013-09-16
US61/878,370 2013-09-16
US14/481,283 US9698074B2 (en) 2013-09-16 2014-09-09 Heated substrate support with temperature profile control
US14/481,283 2014-09-09
PCT/US2014/054945 WO2015038610A1 (en) 2013-09-16 2014-09-10 Heated substrate support with temperature profile control

Publications (2)

Publication Number Publication Date
KR20160055257A KR20160055257A (ko) 2016-05-17
KR102244625B1 true KR102244625B1 (ko) 2021-04-23

Family

ID=52666222

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167009634A Active KR102244625B1 (ko) 2013-09-16 2014-09-10 온도 프로파일 제어를 갖는 가열식 기판 지지부

Country Status (6)

Country Link
US (1) US9698074B2 (enExample)
JP (1) JP6404355B2 (enExample)
KR (1) KR102244625B1 (enExample)
CN (1) CN105556656B (enExample)
TW (1) TWI645498B (enExample)
WO (1) WO2015038610A1 (enExample)

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US9972477B2 (en) 2014-06-28 2018-05-15 Applied Materials, Inc. Multiple point gas delivery apparatus for etching materials
US10186437B2 (en) * 2015-10-05 2019-01-22 Lam Research Corporation Substrate holder having integrated temperature measurement electrical devices
US20170229331A1 (en) * 2016-02-08 2017-08-10 Watlow Electric Manufacturing Company Temperature sensing system for rotatable wafer support assembly
US10184183B2 (en) * 2016-06-21 2019-01-22 Applied Materials, Inc. Substrate temperature monitoring
TWI671851B (zh) 2016-09-22 2019-09-11 美商應用材料股份有限公司 用於寬範圍溫度控制的加熱器基座組件
JP6704834B2 (ja) * 2016-10-28 2020-06-03 日本特殊陶業株式会社 加熱装置
CN110383432A (zh) * 2017-02-28 2019-10-25 日本发条株式会社 基板支撑单元以及具有基板支撑单元的成膜装置
WO2018213621A2 (en) 2017-05-18 2018-11-22 Applied Materials, Inc. Thermal chamber with improved thermal uniformity
JP7049818B2 (ja) * 2017-12-13 2022-04-07 東京エレクトロン株式会社 成膜装置
KR102435174B1 (ko) * 2018-03-19 2022-08-23 닛신덴키 가부시키 가이샤 기판 가열 시스템 및 기판 처리 장치
JP6952633B2 (ja) * 2018-03-23 2021-10-20 東京エレクトロン株式会社 基板加熱装置及びこれを用いた基板処理装置
KR20200120720A (ko) * 2018-03-23 2020-10-21 엔지케이 인슐레이터 엘티디 멀티 존 히터
KR102098556B1 (ko) * 2018-07-09 2020-04-17 주식회사 테스 기판지지유닛 및 이를 구비한 기판처리장치
KR102755388B1 (ko) * 2018-10-24 2025-01-14 어플라이드 머티어리얼스, 인코포레이티드 증착 챔버에 대한 기판 지지부 설계들
CN111383891B (zh) * 2018-12-29 2023-03-10 中微半导体设备(上海)股份有限公司 用于半导体处理设备的温度控制装置及其温度控制方法
CN113632588B (zh) * 2019-03-18 2024-06-25 日本碍子株式会社 陶瓷加热器及其制法
CN110060913A (zh) * 2019-04-22 2019-07-26 德淮半导体有限公司 离子植入机以及监测离子植入机中离子束的方法
WO2021002169A1 (ja) * 2019-07-01 2021-01-07 日本碍子株式会社 シャフト付きセラミックヒータ
CN114041323B (zh) * 2019-07-16 2024-10-11 日本碍子株式会社 带轴的陶瓷加热器
WO2021010062A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ
JP7430617B2 (ja) * 2020-10-16 2024-02-13 日本碍子株式会社 ウエハ載置台
JP7375069B2 (ja) * 2022-03-07 2023-11-07 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
US20250125181A1 (en) * 2023-10-12 2025-04-17 Applied Materials, Inc. Low temperature electrostatic chuck
US20250227851A1 (en) * 2024-01-08 2025-07-10 Tokyo Electron Limited Substrate support with printed heater

Citations (1)

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JP2008527746A (ja) * 2005-01-13 2008-07-24 ワトロウ エレクトリック マニュファクチュアリング カンパニー ウエーハ加工用ヒーターと該ヒーターの操作及び製造の方法

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JP2001118662A (ja) * 1999-08-09 2001-04-27 Ibiden Co Ltd セラミックヒータ
JP4637316B2 (ja) * 2000-02-24 2011-02-23 京セラ株式会社 筒状体を有するセラミックヒーター及びこれを用いた加熱装置
US7273526B2 (en) * 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
JP4435742B2 (ja) * 2005-08-09 2010-03-24 信越化学工業株式会社 加熱素子
JP4889385B2 (ja) 2006-07-07 2012-03-07 日本発條株式会社 ヒータユニットおよびシャフト
JP4294661B2 (ja) * 2006-07-26 2009-07-15 国立大学法人東北大学 基板ステージ、熱処理装置および基板ステージの製造方法
JP5135915B2 (ja) * 2007-06-28 2013-02-06 東京エレクトロン株式会社 載置台構造及び熱処理装置
KR101305760B1 (ko) * 2008-03-21 2013-09-17 엔지케이 인슐레이터 엘티디 세라믹스 히터
JP5358543B2 (ja) * 2009-09-17 2013-12-04 日本碍子株式会社 セラミックスヒーター及びその製造方法
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JP5666167B2 (ja) 2010-05-07 2015-02-12 日本発條株式会社 ステージヒータ及びシャフトの製造方法
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Also Published As

Publication number Publication date
CN105556656B (zh) 2018-11-02
JP2016536803A (ja) 2016-11-24
TWI645498B (zh) 2018-12-21
US9698074B2 (en) 2017-07-04
JP6404355B2 (ja) 2018-10-10
KR20160055257A (ko) 2016-05-17
CN105556656A (zh) 2016-05-04
TW201515145A (zh) 2015-04-16
US20150076135A1 (en) 2015-03-19
WO2015038610A1 (en) 2015-03-19

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