CN110383432A - 基板支撑单元以及具有基板支撑单元的成膜装置 - Google Patents
基板支撑单元以及具有基板支撑单元的成膜装置 Download PDFInfo
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Abstract
本发明提供基板支撑单元。基板支撑单元具有轴、第一加热器以及工作台。第一加热器位于轴的内部,用于加热轴的上部。工作台位于轴的上部,具有第一板、第一板上的第二板、以及第一板与第二板之间的第二加热器。
Description
技术领域
本发明涉及基板支撑单元、或具有基板支撑单元的膜加工装置、成膜装置。
背景技术
半导体设备安装在几乎所有的电子机器上,并且对电子机器的功能起到重要的作用。半导体设备是利用了硅等所具有的半导体特性的设备,并且不仅由半导体构成,还由包括绝缘体、导体等的多个薄膜构成。这些薄膜的形成和加工是通过光刻工艺进行。光刻工艺一般包括:利用了蒸镀、溅射法、化学气相沉积(CVD)法或基板的化学反应等形成薄膜的步骤、在薄膜上形成抗蚀膜的步骤、通过曝光、显影来成形抗蚀掩模的步骤、通过蚀刻来去除薄膜的一部分的步骤、去除抗蚀膜的步骤。
在光刻工艺的各步骤中,许多反应条件左右薄膜的特性,其中之一是基板的温度。在许多情况下,基板的温度是通过调节用于设置基板的载置台(以下,称之为“工作台(stage)”)的温度来得以控制。专利文献1至专利文献3公开了搭载有用于控制基板的温度的加热器的工作台、以及具有用于支撑工作台的轴的基板支撑单元。
(现有技术文献)
(专利文献)
专利文献1:日本专利第5712054号公报
专利文献2:日本特开2005-166368号公报
专利文献3:日本专利第4311922号公报
发明内容
(解决问题的措施)
本发明的实施方式之一为基板支撑单元。基板支撑单元具有轴、第一加热器以及工作台。第一加热器位于轴的内部,用于加热轴的上部。工作台位于轴的上部,具有第一板、第一板上的第二板、以及第一板与第二板之间的第二加热器。
附图说明
图1为示出本发明的一实施方式的膜加工装置的结构的图。
图2A为本发明的一实施方式的基板支撑单元的示意性立体图。
图2B为本发明的一实施方式的基板支撑单元的剖视立体图。
图2C为本发明的一实施方式的基板支撑单元的剖视图。
图3A为本发明的一实施方式的基板支撑单元的示意性俯视图。
图3B为本发明的一实施方式的基板支撑单元的示意性俯视图。
图4A为本发明的一实施方式的基板支撑单元的剖视立体图。
图4B为本发明的一实施方式的基板支撑单元的剖视立体图。
图5为示出本发明的一实施方式的成膜装置的结构的图。
图6为示出本发明的一实施方式的成膜装置的结构的图。
图7为示出本发明的一实施方式的成膜装置的结构的图。
图8A为示出实施例和比较例的基板支撑单元的温度分布的图。
图8B为示出实施例和比较例的基板支撑单元的温度分布的图。
具体实施方式
本发明的实施方式的一目的在于,提供用于精确控制基板的温度的基板支撑单元以及具有基板支撑单元的成膜装置或膜加工装置。
以下,参照附图说明本申请中公开的发明的各实施方式。然而,在不脱离本发明的范围的前提下,能够以各种形式实现本发明,并且本发明不应被解释为限于以下示例的实施方式的描述。
此外,为了使说明清楚,与实际形态相比,在附图中示意性地表示各部分的宽度、厚度、形状等,但这仅仅是示例,不旨在限制本发明的解释。此外,在本说明书和各附图中,给具有与已经出现过的附图中描述的要素相同的功能的要素标注相同的附图标记,并省略重复的描述。
(第一实施方式)
以下,参照图1至图4B说明本发明的实施方式之一的基板支撑单元以及具有其的膜加工装置。
[1.膜加工装置]
在图1中作为本发明的第一实施方式的膜加工装置的一例示出了用于对各种膜进行干法蚀刻(dry etching)的蚀刻装置100。蚀刻装置100具有腔室102。腔室102提供用于对诸如形成在硅基板或玻璃基板上的导体、绝缘体、半导体等的膜进行蚀刻的空间。
腔室102与排气装置104相连接,由此可将腔室102的内部设定为减压环境(atmosphere)。腔室102还设置有用于引入反应气体的引入管106,借助于阀108来向腔室的内部引入蚀刻用反应气体。作为反应气体可以列举,例如四氟化碳(CF4)、八氟环丁烷(c-C4F8)、十氟环戊烷(c-C5F10)、六氟丁二烯(C4F6)等的含氟有机化合物。
可以在腔室102的上部通过导波管110来设置微波源112。微波源112具有用于提供微波的天线等,例如,输出2.45GHz的微波、或13.56MHz的无线电波(RF)等的高频微波。微波源112所产生的微波被导波管110向腔室102的上部传播,并通过包含石英、陶瓷等的窗口114而引入到腔室102的内部。微波对反应气体进行等离子体化,利用包含在等离子体中的电子、离子、自由基对膜进行蚀刻。
在腔室102的下部设置有用于载置基板且控制基板的温度的基板支撑单元130。基板支撑单元130具有轴134和设置于轴134上的工作台132。基板设置于工作台132上。工作台132与电源122相连接,高频电力施加到工作台132,基于微波的电场在相对于工作台132表面、基板表面垂直的方向上形成。在腔室102的上部、侧面还可以设置磁铁116、118、120。磁铁116、118、120可以是永磁体,也可以是具有电磁线圈的电磁体。通过磁铁116、118、120来生成与工作台132及基板表面平行的磁场分量(magnetic field component),在与基于微波的电场的联合作用下等离子体中的电子受到洛伦兹力(Lorentz force)而共振,被约束于工作台132及基板表面。其结果,能够在基板表面产生高密度的等离子体。
工作台132与加热器电源126相连接,上述加热器电源126用于控制设置在工作台132、轴134的加热器(后述的第一加热器、第二加热器)。工作台132还可与用于将基板固定到工作台132上的静电吸盘(Electrostatic Chuck)所用的电源124相连接。蚀刻装置100作为任意结构还可设置有用于使工作台132旋转的旋转控制装置128。
[2.基板支撑单元]
在2A中示出了基板支撑单元130的示意性立体图。如图2A所示,基板支撑单元130具有轴134、以及设置于轴134的上部的工作台132。
<1.工作台>
工作台132可具有两个板,在这里示出了设置有下部板132b和位于下部板132b的上部的上部板132a的例子。上部板132a与下部板132b可以通过螺丝来相互连接,或者也可以通过熔焊、钎焊来固定。上部板132a、下部板132b的主要材料为金属,作为材料可以例举钛、铝、不锈钢等。尽管未示出,在下部板132b的底部面可以设有用于设置温度传感器的开口。温度传感器可使用热电偶等。在图2A中示出了圆形的工作台132,然而工作台132的形状并无限制,还可以具有椭圆形、或四边形等多边形的形状。
在图2B中示出了基板支撑单元130的剖视立体图,在图2C中示出了图2B的中心部分的放大图。如图2B所示,工作台132在下部板132b与上部板132a之间具有第二加热器140。第二加热器140是为了加热工作台132而设置,并且沿着形成在下部板132b和上部板132a的槽配置。然而,槽也可以仅设置于下部板132b和上部板132a中的一方。
在图3A中示出了工作台132的上部面的示意图。图3A示出从工作台132中省略掉了上部板132a的状态。如图3A所示,第二加热器140环绕工作台132整体,由此工作台132整体被加热。
作为第二加热器140的代表性示例,可以例举护套式加热器(sheath heater)。护套式加热器具有金属护套,在金属护套内设置有包括利用通电而产生热量的金属的发热体、以及包住发热体的绝缘体。发热体可包含选自钨(W)、镍(Ni)、铬(Cr)、钴(Co)以及钼(Mo)的金属。金属还可以是包含这些金属的合金,例如,镍和铬的合金、包含镍、铬以及钴的合金。作为绝缘体可以例举氧化铝、氧化钛、氧化铬、氧化锆、氧化镁、氧化钇及它们的复合氧化物。
如图2B所示,第二加热器140与配线142相连接,配线142从工作台132的中心在轴134的内部延伸,并与图1所示的加热器电源126相连接。流过第二加热器140的电流由加热器电源126控制,由此控制工作台132的温度。
<2.轴>
轴134为用于支撑工作台132的部件,具有主轴136以及作为任意结构的连接器138(图2B、图2C)。在设置连接器138的情况下,连接器可以设置成与下部板132b和主轴136中的至少一方相接。轴134与工作台132可以通过熔焊或钎焊而相连接。
主轴136可以呈管状,在工作台132是圆形的情况下,工作台132和主轴136可构成为经过工作台132的中心的法线通过主轴136的截面或截面的中心。工作台132的面积大于主轴136的横截面积。在主轴136的内部形成有空腔或空间、并且其内配置配线142。如图2C所示,在主轴136的上端可以形成有法兰144(图中用虚线椭圆表示的部分)。在形成法兰144的情况下,法兰144呈环状,并且形成主轴136的端部。在设置连接器138的情况下,连接器138呈环状,并且以覆盖法兰144的方式设置。
主轴136、连接器138可以包含能够在上部板132a和下部板132b中使用的材料。例如,主轴136和上部板132a、下部板132b可以包含相同材料。由此,轴134与工作台132之间的热膨胀系数之差消失,从而可以对轴134与工作台132之间的连接赋予高的可靠性。在轴134、工作台132、连接器138中使用不同材料的情况下,材料之间的热膨胀率之差可设定成0.2×10-6/K以上且2.0×10-6/K以下、或0.5×10-6/K以上且1.0×10-6/K以下、或0.7×10-6/K以上且0.9×10-6/K。此外,为了提高从轴的防散热效果,可以在连接器138中使用高导热材料,在主轴136中使用低导热材料。在此情况下,高导热材料和低导热材料中的至少一方可以与包含在上部板132a、下部板132b中的材料不同。
轴134还内置有用于加热主轴136的上部的第一加热器150。例如,第一加热器150可以设置于主轴136与下部板132b之间,或者如图2B、图2C所示,可以设置于主轴136与连接器138之间。尽管未示出,第一加热器150还可以设置于连接器138与下部板132b之间。
第一加热器150配置为环绕轴134、或环绕主轴136的空腔。此外,配置为环绕经过工作台132的中心的工作台132的法线的方式。在设置法兰144的情况下,如图2C所示,可沿着形成在法兰144及连接器138的槽设置第一加热器150。然而,槽也可以形成在法兰144及连接器138中的至少一方。在图3B中示出轴134的俯视图。在这里,第二加热器140、下部板132b的一部分用虚线示出。如图2C及图3B所示,第一加热器150可以配置为,在法兰144所形成的平面内,第一加热器150的一部分与多个同心圆重叠。
与第二加热器140相同地,作为第一加热器150可使用护套式加热器。第一加热器150的端子与配线152相连接(图2B、图2C),配线152在主轴136的空腔内延伸,并与图1所示的加热器电源126相连接。流过第一加热器150的电流由加热器电源126控制,由此控制主轴136的上部的温度。
第一加热器150和第二加热器140可构成为第一加热器150的横截面积小于第二加热器140的横截面积。即,第一加热器150和第二加热器140可构成为内置于第一加热器150的发热体的横截面积小于内置于第二加热器140的发热体的横截面积。因此,可以在与工作台132相比具有小的面积的主轴136、法兰144上以更高的密度设置第一加热器150。
半导体工艺中的基板的温度的设定范围广,例如被加热到500℃以上的情况也很多。为了在如此高温下对基板进行加热,有必要对设置于工作台132的第二加热器140赋予大的功率,因此,具有大的横截面积的发热体被用于第二加热器140中,与此相伴,可使用具有大的横截面积的护套式加热器作为第二加热器140。在将具有大的横截面积的护套式加热器如图1所示那样变形而使用的情况下,弯曲部分的曲率半径受到限制。即,虽然易于使第二加热器140平缓地弯曲,但是难以以大曲率半径弯曲,因此在工作台132的中心附近和周边区域难以使加热器的设置密度均匀。更具体地,虽然可以在工作台132的周边区域以高的密度配置第二加热器140,但是在中心附近难以以高的密设置第二加热器140。进而,由于在工作台132的中心附近设置有轴134,因而工作台132的热量容易通过轴134被夺走。其结果,工作台132的中心及其附近的温度比周边区域容易变低。由于这些原因,将工作台132整体保持在均匀的温度并不容易。
另一方面,如上所述,在本实施方式中所示的基板支撑单元中,与用于进行工作台132的加热的第二加热器140一同设置用于加热轴134的端部、即加热轴134的工作台132的附近的第一加热器150。此外,由于第一加热器150的横截面积小于第二加热器140的横截面积,因而能够以高密度配置于法兰144、连接器138等的具有小面积的部件。因此,可通过使用第一加热器150对轴134的端部进行加热来防止工作台132的中心及其附近的温度的下降。其结果,可以容易地保持工作台132整体的温度均匀,并且可以实现精确的基板温度控制。
<3.其他结构>
工作台132还可以具有静电吸盘160,其作为将基板固定在工作台132上的部件(图4A)来使用。静电吸盘160可以具有例如由绝缘性膜164覆盖静电吸盘电极162的结构。通过从电源124(参照图1参照)向静电吸盘电极162施加高电压(数百V至数千V)来在静电吸盘电极162上产生电荷。同时,在基板的背面产生与在静电吸盘电极162上产生的电荷相反极性的电荷。可以利用极性不同的电荷之间的库仑力来将基板固定。作为绝缘体,可以使用氧化铝、氮化铝、氮化硼等的陶瓷。此外,绝缘性膜164不必是完全绝缘,可以具有一定程度的导电性(例如,109Ω·cm至1012Ω·cm量级的电阻率)。在此情况下,可在膜164的上述陶瓷中掺杂氧化钛、氧化锆、氧化铪等的金属氧化物。在静电吸盘160的周围还可以设置用于确定基板的位置的筋166。
进而,作为任意结构,工作台132可具有一个或多个贯通孔168。为了在贯通孔168内流动氦气等的导热率高的气体而可以在腔室102设置氦气引入管。由此,气体流动于工作台132与基板之间的间隙,从而能够将工作台132的热能有效地传递给基板。
还可以对工作台132赋予真空吸盘的功能,而不是对工作台132设置用于固定基板的静电吸盘160。例如,如图4B所示,可以在上部板132a设置多个抽吸孔170,使用未图示的抽吸装置来从抽吸孔170抽吸气体,将基板吸附到上部板132a上从而固定。
尽管未示出,也可以在工作台132的内部设置用于使介质循环而控制基板的温度的槽(流路)。作为介质,可以使用水、异丙醇(isopropanol)或乙二醇(ethylene glycol)等的醇(Alcohol)、硅油(silicone oil)等液体介质。在此情况下,在上部板132a和下部板132b中的一方或双方形成槽,之后通过钎焊等而接合上部板132a与下部板132b。介质可用于对工作台132进行冷却或对工作台132进行加热的任一种情况。
(第二实施方式)
在本实施方式中,参照图5至图7说明具有在第一实施方式中所述的基板支撑单元130的各种成膜装置。存在省略对与第一实施方式相同的结构的描述的情况。
[1.CVD装置]
图5为示出作为成膜装置之一的CVD装置200的结构的图。CVD装置200具有腔室202,并提供使反应气体发生化学反应的场所。
腔室202与排气装置204相连接,可以对腔室202内进行减压。腔室202还设置有用于引入反应气体的引入管206,经由阀208来向腔室的内部引入成膜用反应气体。作为反应气体根据所制备的膜而可使用各种气体。气体在室温下液体也可。例如,可通过使用硅烷(silane)、二氯硅烷(dichlorosilane)、四乙氧基硅烷(tetraethoxysilane)等来形成有机硅(silicone)、氧化硅、氮化硅等的薄膜。或者,可以通过使用氟化钨、三甲基铝等来形成钨、铝等的金属薄膜。
与蚀刻装置100相同地,可以在腔室202上部通过导波管210来设置微波源212。微波源212所产生的微波被导波管210引入至腔室202的内部。微波对反应气体进行等离子体化,包含在等离子体中的各种活性物质促进气体的化学反应,由化学反应所获得的产物沉积在基板上而形成薄膜。作为任意结构,可在腔室202的内部设置用于增强等离子体的密度的磁铁244。在腔室202的下部设置有在第一实施方式中描述的基板支撑单元130,可以在基板设置在工作台132上的状态下进行薄膜的沉积。与蚀刻装置100相同地,在腔室202的侧面还可设置磁铁216、218。
CVD装置200还设置有用于控制在工作台132、轴134上设置的第一加热器150、第二加热器140的加热器电源224。CVD装置200还可具有用于给工作台132提供高频电力的电源226、静电吸盘用电源228、用于对在工作台132的内部循环的介质的温度进行控制的温度控制器230等。作为任意结构,CVD装置200还可设置有用于使工作台132旋转的旋转控制装置(未图示)。
[2.溅射装置]
图6为作为成膜装置之一的溅射装置300的示意图。溅射装置300具有腔室302,并提供用于使高速的离子与靶碰撞、以及此时产生的靶原子沉积的场所。
腔室302与用于使腔室302的内部减压的排气装置304相连接。在腔室302设置有用于将氩气等的溅射气体引入至腔室302内的引入管306以及阀308。
在腔室302的下部设置有保持包含成膜材料的靶且作为阴极来发挥作用的靶工作台310,其上可设置靶312。靶工作台310与高频电源314相连接,可在高频电源314的作用下在腔室302的内部产生等离子体。
可在腔室302的上部设置第一实施方式中所描述的基板支撑单元130。在此情况下,在工作台132的下部设置基板的状态下进行薄膜的形成。与蚀刻装置100、CVD装置200相同地,溅射装置300设置有用于控制在工作台132、轴134上设置的第一加热器150、第二加热器140的加热器电源324。基板支撑单元130还可以与用于向工作台132提供高频电力的电源326、静电吸盘用电源328、温度控制器330等相连接。溅射装置300还可设置有作为任意结构的用于使工作台132旋转的旋转控制装置(未图示)。
在腔室302的内部所产生的等离子体的作用下被加速的氩离子与靶312碰撞,将靶312的原子撞击出。撞击出的原子在遮板(shutter)316打开的期间飞溅到设置于工作台132的下部的基板并沉积。
在本实施方式中,示出了基板支撑单元130设置于腔室302的上部且靶工作台310设置于腔室302的下部的结构,但本实施方式不限于此,还可以将溅射装置300以使靶位于基板支撑单元130上的方式构成。或者,还可以将基板支撑单元130设置为使得基板的主表面垂直于水平面,并且将靶工作台310设置为与基板支撑单元130相对置。
[3.蒸镀装置]
图7为作为成膜装置之一的蒸镀装置400的示意图。蒸镀装置400具有腔室402,并提供用于使蒸镀源410的材料蒸发以及使所蒸发的材料向基板沉积的空间。
腔室402与用于使腔室402的内部成为高真空的排气装置404相连接。腔室402设置有用于使腔室402恢复到大气压的引入管406,经由阀408来向腔室402的内部引入氮气或氩气等的不活泼性气体。
在腔室402的上部可以设置有第一实施方式中所描述的基板支撑单元130。在工作台132的下部设置基板的状态下进行材料的沉积。与蚀刻装置100、CVD装置200、溅射装置300相同地,在蒸镀装置400还设置有用于控制在工作台132、轴134上设置的第一加热器150、第二加热器140的加热器电源424。基板支撑单元130还可以设置有静电吸盘用电源426、温度控制器428、用于使工作台132旋转的旋转控制装置430等。基板支撑单元130还可以具有用于将金属掩模固定在基板与蒸镀源410之间的掩模架416。由此,可将金属掩模以金属掩模的开口部与材料要沉积的区域重叠的方式配置于基板附近。
蒸镀源410设置于腔室的下侧,并且所要蒸镀的材料填充在蒸镀源410内。蒸镀源410设置有用于加热材料的加热器,加热器由控制装置412控制。使用排气装置404使腔室402的内部成为高真空并加热蒸镀源410而使材料气化,据此开始蒸镀。当蒸镀的速度达到恒定时,打开遮板414而开始在基板上沉积材料。
如上所述,本实施方式的CVD装置200、溅射装置300、蒸镀装置400等的成膜装置可以具有实施方式1中所描述的基板支撑单元130。因此,可以均匀地控制基板整体的温度,并且可以大幅降低所形成的薄膜的物理性质的不均匀。
实施例
在以下所述的实施例中,对使用第一实施方式中所描述的基板支撑单元130而能够均匀地加热工作台132整体的情况进行说明。
将具有图2A至图3B所示结构的基板支撑单元130用作实施例,进行了加热温度的模拟。模拟的设定条件如下。此外,作为比较例,使用了不具有第一加热器150的基板支撑单元。
(1)上部板132a及下部板132b
直径:350mm;厚度:30mm;热导率:170W/m·K
(2)第一加热器150
横截面积:2.54mm2;长度:1300mm;发热量:400W
(3)第二加热器
横截面积:85mm2;长度:1500mm;发热量:600W
(4)主轴136
外径:60mm;内径:50mm;长度:90mm;热导率:170W/m·K
(5)连接器138:
外径:90mm;内径:50mm;厚度:5mm;热导率:170W/m·K
(6)法兰144
外径:90mm;内径:50mm;厚度:10mm;热导率:170W/m·K
(7)外部环境
环境:真空;温度:30℃;辐射率:0.3
图8A、图8B分别示出在上述设定条件下达到平衡时的实施例、比较例的基板支撑单元130的温度分布。在各图中,左侧为基板支撑单元的俯视图,右侧为从箭头方向观察的剖视图。如图8B所示,在比较例的基板支撑单元中,在上部板132a观察到了大的温度分布,温度随着从周边区域靠向中心而下降。具体地,表示出最大温度的位置为上部板132a的周边区域,其温度为370.9℃。另一方面,表示出最小温度的位置为上部板132a的中央部,其温度为350.5℃,最大温度与最小温度之差为20.4℃。
另一方面,如图8A所示,在实施例的基板支撑单元130中,表示出最大温度和最小温度的位置与比较例相同,前者为368.5℃、后者为360.4℃,两者之差仅为8.1℃。
如上述的模拟结果所示,本发明的实施方式的基板支撑单元130在轴134的上端部、即轴134的工作台132附近内置有第一加热器150,通过使用该第一加热器150来补偿因从工作台132的中心部到轴134的热传导而导致的热损失,其结果,发现工作台132可以被均匀地加热。因此,通过使用具有该基板支撑单元130的成膜装置、膜加工装置来能够在基板上形成具有均匀特性的各种薄膜、或者能够在基板上对薄膜进行均匀的成型,从而可以更精确地控制半导体工艺。
作为本发明的实施方式来所说明的各实施方式只要它们不相互矛盾即可适当地组合而实施。此外,只要是具有本发明的主旨,本领域技术人员基于各实施方式适当添加、删除结构要素或改变设计的方案也包括在本发明的范围内。
此外,即使是与上述的各实施方式所带来的作用效果不同的其他作用效果,只要是通过本说明书的描述而显而易见的、或者本领域技术人员可以容易地预测到的任何内容,应当理解为由本发明实现。
(附图标记的说明)
100:蚀刻装置;102:腔室;104:排气装置;106:引入管;
108:阀;110:导波管;112:微波源;114:窗口;116:磁铁;
118:磁铁;120:磁铁;122:电源;124:电源;126:加热器电源;
128:旋转控制装置;130:基板支撑单元;132:工作台;132a:上部板;
132b:下部板;134:轴;136:主轴;138:连接器;140:第二加热器;
142:配线;144:法兰;150:第一加热器;152:配线;160:静电吸盘;
162:静电吸盘电极;164:绝缘性膜;166:筋;168:贯通孔;
170:吸引孔;200:CVD装置;202:腔室;204:排气装置;
206:引入管;208:阀;210:导波管;212:微波源;216:磁铁;
218:磁铁;224:加热器电源;226:电源;228:电源;
230:温度控制器;244:磁铁;300:溅射装置;302:腔室;
304:排气装置;306:引入管;308:阀;310:靶工作台;
312:靶;314:高频电源;316:遮板;324:加热器电源;
326:电源;328:电源;330:温度控制器;400:蒸镀装置;
402:腔室;404:排气装置;406:引入管;408:阀;410:蒸镀源;
412:控制装置;414:遮板;416:掩模架;424:加热器电源;
426:电源;428:温度控制器;430:旋转控制装置。
Claims (11)
1.一种基板支撑单元,其特征在于,包括:
轴;
第一加热器,位于上述轴的内部,用于加热上述轴的上部;以及
工作台,位于上述轴的上部,具有第一板、上述第一板上的第二板、以及上述第一板与上述第二板之间的第二加热器。
2.根据权利要求1所述的基板支撑单元,其特征在于,
上述轴具有主轴,
上述第一加热器夹持在上述主轴与上述第一板之间。
3.根据权利要求2所述的基板支撑单元,其特征在于,
上述轴在上述主轴与上述第一板之间还具有连接器,
上述连接器与上述主轴和上述第一板中的至少一方相连,
上述第一加热器夹持在上述主轴与上述连接器之间。
4.根据权利要求3所述的基板支撑单元,其特征在于,
上述主轴呈管状,在上端部具有环形状的法兰,
上述连接器呈环形状且覆盖上述法兰。
5.根据权利要求1所述的基板支撑单元,其特征在于,
上述轴呈管状,内部具有空腔,
在上述空腔的内部有配置与上述第一加热器相连接的配线、以及与上述第二加热器相连接的配线,
上述第一加热器环绕上述空腔。
6.根据权利要求1所述的基板支撑单元,其特征在于,
上述第一加热器的横截面积小于上述第二加热器的横截面积。
7.根据权利要求1所述的基板支撑单元,其特征在于,
上述轴的横截面积小于上述第一板的表面的面积,
上述轴与上述第一板的中心重合,
上述第一加热器以环绕经过上述中心的上述第一板的法线的方式配置。
8.根据权利要求1所述的基板支撑单元,其特征在于,
上述轴被钎焊或被熔焊于上述第一板。
9.根据权利要求3所述的基板支撑单元,其特征在于,
上述连接器被钎焊或被熔焊于上述第一板。
10.一种成膜装置,具有权利要求1所述的基板支撑单元。
11.一种膜加工装置,具有权利要求1所述的基板支撑单元。
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