KR102231730B1 - 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거 - Google Patents

각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거 Download PDF

Info

Publication number
KR102231730B1
KR102231730B1 KR1020157002125A KR20157002125A KR102231730B1 KR 102231730 B1 KR102231730 B1 KR 102231730B1 KR 1020157002125 A KR1020157002125 A KR 1020157002125A KR 20157002125 A KR20157002125 A KR 20157002125A KR 102231730 B1 KR102231730 B1 KR 102231730B1
Authority
KR
South Korea
Prior art keywords
scanning
delete delete
test pattern
pattern
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157002125A
Other languages
English (en)
Korean (ko)
Other versions
KR20150036214A (ko
Inventor
암논 마나쎈
앤디 힐
다니엘 칸델
일란 세라
오하드 바카르
바락 브링골츠
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Priority to KR1020217007857A priority Critical patent/KR102330743B1/ko
Publication of KR20150036214A publication Critical patent/KR20150036214A/ko
Application granted granted Critical
Publication of KR102231730B1 publication Critical patent/KR102231730B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Measuring instruments characterised by the use of optical techniques
    • G01B9/02Interferometers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/061Sources
    • G01N2201/06113Coherent sources; lasers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/10Scanning
    • G01N2201/104Mechano-optical scan, i.e. object and beam moving

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020157002125A 2012-06-26 2013-06-25 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거 Active KR102231730B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217007857A KR102330743B1 (ko) 2012-06-26 2013-06-25 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261664477P 2012-06-26 2012-06-26
US61/664,477 2012-06-26
US201361764435P 2013-02-13 2013-02-13
US61/764,435 2013-02-13
PCT/US2013/047691 WO2014004564A1 (en) 2012-06-26 2013-06-25 Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217007857A Division KR102330743B1 (ko) 2012-06-26 2013-06-25 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거

Publications (2)

Publication Number Publication Date
KR20150036214A KR20150036214A (ko) 2015-04-07
KR102231730B1 true KR102231730B1 (ko) 2021-03-24

Family

ID=49783807

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020157002125A Active KR102231730B1 (ko) 2012-06-26 2013-06-25 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
KR1020217019127A Active KR102330741B1 (ko) 2012-06-26 2013-06-25 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
KR1020217007857A Active KR102330743B1 (ko) 2012-06-26 2013-06-25 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020217019127A Active KR102330741B1 (ko) 2012-06-26 2013-06-25 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
KR1020217007857A Active KR102330743B1 (ko) 2012-06-26 2013-06-25 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거

Country Status (6)

Country Link
US (3) US9958385B2 (enExample)
EP (1) EP2865003A1 (enExample)
JP (3) JP6353831B2 (enExample)
KR (3) KR102231730B1 (enExample)
TW (2) TWI629448B (enExample)
WO (1) WO2014004564A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NZ711441A (en) 2005-10-14 2017-05-26 Resmed Ltd Flow generator message system
EP3521209B1 (de) 2010-07-22 2020-01-22 K-fee System GmbH Portionskapsel mit barcode
JP6063875B2 (ja) 2011-02-24 2017-01-18 エキシモ メディカル リミテッド 組織切除のためのハイブリッドカテーテル
KR102231730B1 (ko) 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US9851300B1 (en) 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
EP3552571B8 (en) 2014-05-18 2024-10-30 Eximo Medical Ltd. System for tissue ablation using pulsed laser
WO2015191543A1 (en) * 2014-06-10 2015-12-17 Applied Materials Israel, Ltd. Scanning an object using multiple mechanical stages
TWI755987B (zh) * 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
KR102133320B1 (ko) * 2015-10-09 2020-07-14 에이에스엠엘 네델란즈 비.브이. 검사 및 계측을 위한 방법 및 장치
US20180047646A1 (en) * 2016-02-24 2018-02-15 Kla-Tencor Corporation Accuracy improvements in optical metrology
US11684420B2 (en) 2016-05-05 2023-06-27 Eximo Medical Ltd. Apparatus and methods for resecting and/or ablating an undesired tissue
WO2017209544A1 (ko) * 2016-06-02 2017-12-07 주식회사 더웨이브톡 패턴 구조물 검사 장치 및 검사 방법
KR101971272B1 (ko) 2016-06-02 2019-08-27 주식회사 더웨이브톡 패턴 구조물 검사 장치 및 검사 방법
EP3318927A1 (en) * 2016-11-04 2018-05-09 ASML Netherlands B.V. Method and apparatus for measuring a parameter of a lithographic process, computer program products for implementing such methods & apparatus
KR102650388B1 (ko) * 2016-11-23 2024-03-25 삼성전자주식회사 검사 장치 및 그를 이용한 반도체 소자의 제조 방법
TWI649635B (zh) * 2017-01-24 2019-02-01 台灣積體電路製造股份有限公司 層疊誤差測量裝置及方法
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US11378451B2 (en) * 2017-08-07 2022-07-05 Kla Corporation Bandgap measurements of patterned film stacks using spectroscopic metrology
US11156846B2 (en) 2019-04-19 2021-10-26 Kla Corporation High-brightness illumination source for optical metrology
DE102019215972A1 (de) 2019-10-17 2021-04-22 Carl Zeiss Smt Gmbh Verfahren zur Messung einer Reflektivität eines Objekts für Messlicht sowie Metrologiesystem zur Durchführung des Verfahrens
WO2021110391A1 (en) * 2019-12-05 2021-06-10 Asml Netherlands B.V. Alignment method
US11168978B2 (en) * 2020-01-06 2021-11-09 Tokyo Electron Limited Hardware improvements and methods for the analysis of a spinning reflective substrates
WO2022051551A1 (en) * 2020-09-02 2022-03-10 Applied Materials Israel Ltd. Multi-perspective wafer analysis
US12376904B1 (en) 2020-09-08 2025-08-05 Angiodynamics, Inc. Dynamic laser stabilization and calibration system
CN116235026B (zh) * 2020-11-18 2024-09-20 鲁姆斯有限公司 基于光学的系统
US20240027913A1 (en) * 2020-12-08 2024-01-25 Asml Netherlands B.V. Metrology system and coherence adjusters
US12085385B2 (en) 2021-10-06 2024-09-10 Kla Corporation Design-assisted large field of view metrology
KR20230170217A (ko) 2022-06-10 2023-12-19 삼성전자주식회사 반도체 계측 장치
US12038322B2 (en) 2022-06-21 2024-07-16 Eximo Medical Ltd. Devices and methods for testing ablation systems
KR20240108945A (ko) * 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
KR20250151074A (ko) 2024-04-13 2025-10-21 이수연 지퍼가 달린 고무장갑

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001194323A (ja) * 1999-10-29 2001-07-19 Hitachi Ltd パターン欠陥検査方法及びその装置
US20050264813A1 (en) 2003-06-25 2005-12-01 George Giakos Multi-wavelength imaging system
JP2006208380A (ja) 2005-01-24 2006-08-10 Kla-Tencor Technologies Corp 焦点ずれ検出のためのマルチスペクトル技術
US20090141193A1 (en) 2007-10-25 2009-06-04 Kenji Nakayama Image display apparatus
JP2010541021A (ja) 2007-10-02 2010-12-24 ケーエルエー−テンカー・コーポレーション 反射対物鏡、ミラーを有する広帯域対物光学系、及び屈折レンズを有する光学撮像システム、及び2つ以上の結像経路を有する広帯域光学撮像システム
WO2011028807A2 (en) 2009-09-03 2011-03-10 Kla-Tencor Corporation Metrology systems and methods
JP2012083621A (ja) * 2010-10-13 2012-04-26 Olympus Corp 走査型レーザ顕微鏡

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288780B1 (en) * 1995-06-06 2001-09-11 Kla-Tencor Technologies Corp. High throughput brightfield/darkfield wafer inspection system using advanced optical techniques
US6023338A (en) * 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
JPH10253889A (ja) * 1997-03-13 1998-09-25 Olympus Optical Co Ltd 走査型顕微鏡装置
WO1999047041A1 (en) * 1998-03-19 1999-09-23 Board Of Regents, The University Of Texas System Fiber-optic confocal imaging apparatus and methods of use
US6151127A (en) * 1998-05-28 2000-11-21 The General Hospital Corporation Confocal microscopy
US6496468B2 (en) * 1998-05-29 2002-12-17 Terastor Corp. Beam focusing in near-field optical recording and reading
US6800859B1 (en) * 1998-12-28 2004-10-05 Hitachi, Ltd. Method and equipment for detecting pattern defect
US6512385B1 (en) * 1999-07-26 2003-01-28 Paul Pfaff Method for testing a device under test including the interference of two beams
US7049633B2 (en) * 1999-12-10 2006-05-23 Tokyo Electron Limited Method of measuring meso-scale structures on wafers
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7541201B2 (en) * 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7139083B2 (en) 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
US7115858B1 (en) * 2000-09-25 2006-10-03 Nanometrics Incorporated Apparatus and method for the measurement of diffracting structures
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
DE10146944A1 (de) * 2001-09-24 2003-04-10 Zeiss Carl Jena Gmbh Meßanordnung
US6958814B2 (en) * 2002-03-01 2005-10-25 Applied Materials, Inc. Apparatus and method for measuring a property of a layer in a multilayered structure
US6792328B2 (en) 2002-03-29 2004-09-14 Timbre Technologies, Inc. Metrology diffraction signal adaptation for tool-to-tool matching
US7170604B2 (en) 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
US7046376B2 (en) 2002-07-05 2006-05-16 Therma-Wave, Inc. Overlay targets with isolated, critical-dimension features and apparatus to measure overlay
KR101223195B1 (ko) * 2002-09-09 2013-01-21 지고 코포레이션 박막 구조의 특징화를 포함하여, 타원편광 측정, 반사 측정 및 산란 측정을 위한 간섭측정 방법 및 장치
TWI251722B (en) 2002-09-20 2006-03-21 Asml Netherlands Bv Device inspection
JP2004166151A (ja) * 2002-11-15 2004-06-10 Fuji Photo Film Co Ltd 画像データ作成方法および装置
US7525659B2 (en) * 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
US20040227944A1 (en) * 2003-02-28 2004-11-18 Nikon Corporation Mark position detection apparatus
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
JP4209709B2 (ja) * 2003-03-20 2009-01-14 株式会社キーエンス 変位計
EP1668420B1 (en) * 2003-09-26 2008-05-21 Carl Zeiss SMT AG Exposure method as well as projection exposure system for carrying out the method
JP4074867B2 (ja) 2003-11-04 2008-04-16 エーエスエムエル ネザーランズ ビー.ブイ. 第1及び第2位置合せマークの相対位置を計測する方法及び装置
US7417743B2 (en) * 2004-03-15 2008-08-26 Zygo Corporation Interferometry systems and methods
US7081957B2 (en) 2004-04-08 2006-07-25 Therma-Wave, Inc. Aperture to reduce sensitivity to sample tilt in small spotsize reflectometers
DE102004034960A1 (de) * 2004-07-16 2006-02-02 Carl Zeiss Jena Gmbh Korrektur-Vorrichtung für eine optische Anordnung und konfokales Mikroskop mit einer solchen Vorrichtung
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
WO2006023612A2 (en) * 2004-08-19 2006-03-02 Zetetic Institute Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers
EP1640706A1 (en) 2004-09-22 2006-03-29 Eldim Sa Wavelength and incidence angle resolved ellipsometer or reflectometer
US7884947B2 (en) 2005-01-20 2011-02-08 Zygo Corporation Interferometry for determining characteristics of an object surface, with spatially coherent illumination
US7528953B2 (en) 2005-03-01 2009-05-05 Kla-Tencor Technologies Corp. Target acquisition and overlay metrology based on two diffracted orders imaging
US7161667B2 (en) * 2005-05-06 2007-01-09 Kla-Tencor Technologies Corporation Wafer edge inspection
US7433034B1 (en) * 2005-06-17 2008-10-07 Nanometrics Incorporated Darkfield defect inspection with spectral contents
US8026495B2 (en) * 2005-10-28 2011-09-27 Carl Zeiss Sms Gmbh Charged particle beam exposure system
US20070121090A1 (en) 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009527770A (ja) * 2006-02-24 2009-07-30 ザ ジェネラル ホスピタル コーポレイション 角度分解型のフーリエドメイン光干渉断層撮影法を遂行する方法及びシステム
US7523021B2 (en) 2006-03-08 2009-04-21 Tokyo Electron Limited Weighting function to enhance measured diffraction signals in optical metrology
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7664608B2 (en) * 2006-07-14 2010-02-16 Hitachi High-Technologies Corporation Defect inspection method and apparatus
US7643666B2 (en) 2006-08-08 2010-01-05 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7428044B2 (en) 2006-11-16 2008-09-23 Tokyo Electron Limited Drift compensation for an optical metrology tool
US20080135774A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Scatterometer, a lithographic apparatus and a focus analysis method
WO2008080127A2 (en) * 2006-12-22 2008-07-03 Zygo Corporation Apparatus and method for measuring characteristics of surface features
US7741131B2 (en) * 2007-05-25 2010-06-22 Electro Scientific Industries, Inc. Laser processing of light reflective multilayer target structure
WO2008152802A1 (ja) * 2007-06-13 2008-12-18 Nikon Corporation 共焦点顕微鏡装置
US8164739B2 (en) * 2007-09-28 2012-04-24 Asml Holding N.V. Controlling fluctuations in pointing, positioning, size or divergence errors of a beam of light for optical apparatus
KR20100092014A (ko) * 2007-11-12 2010-08-19 마이크로닉 레이저 시스템즈 에이비 패턴 에러들을 검출하기 위한 방법들 및 장치들
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
US8115992B2 (en) * 2007-12-31 2012-02-14 Stc.Unm Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy
NL1036468A1 (nl) * 2008-02-27 2009-08-31 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8194301B2 (en) * 2008-03-04 2012-06-05 Kla-Tencor Corporation Multi-spot scanning system and method
JP2009253209A (ja) * 2008-04-10 2009-10-29 Canon Inc 露光装置及びデバイス製造方法
NL1036702A1 (nl) 2008-04-15 2009-10-19 Asml Holding Nv Diffraction elements for alignment targets.
NL1036856A1 (nl) * 2008-04-24 2009-10-27 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US7986412B2 (en) * 2008-06-03 2011-07-26 Jzw Llc Interferometric defect detection and classification
US7990534B2 (en) 2008-07-08 2011-08-02 Tokyo Electron Limited System and method for azimuth angle calibration
US8930156B2 (en) * 2008-07-21 2015-01-06 Kla-Tencor Corporation Metrology through use of feed forward feed sideways and measurement cell re-use
US9080991B2 (en) * 2008-09-29 2015-07-14 Kla-Tencor Corp. Illuminating a specimen for metrology or inspection
US8994921B2 (en) * 2008-11-07 2015-03-31 Asml Netherlands B.V. Scatterometer and lithographic apparatus
US8004688B2 (en) * 2008-11-26 2011-08-23 Zygo Corporation Scan error correction in low coherence scanning interferometry
JP5214538B2 (ja) * 2009-05-25 2013-06-19 オリンパス株式会社 画像取得装置、画像合成方法、及び顕微鏡システム
US9164397B2 (en) * 2010-08-03 2015-10-20 Kla-Tencor Corporation Optics symmetrization for metrology
JP2012037310A (ja) * 2010-08-05 2012-02-23 Renesas Electronics Corp 半導体集積回路の故障解析装置及び故障解析方法
WO2012126718A1 (en) * 2011-03-21 2012-09-27 Asml Netherlands B.V. Method and apparatus for determining structure parameters of microstructures
US8681413B2 (en) * 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
NL2009079A (en) 2011-08-23 2013-02-27 Asml Netherlands Bv Metrology method and apparatus, and device manufacturing method.
US9228943B2 (en) 2011-10-27 2016-01-05 Kla-Tencor Corporation Dynamically adjustable semiconductor metrology system
US8982358B2 (en) * 2012-01-17 2015-03-17 Kla-Tencor Corporation Apparatus and method of measuring roughness and other parameters of a structure
JP6033890B2 (ja) 2012-02-21 2016-11-30 エーエスエムエル ネザーランズ ビー.ブイ. 検査装置及び方法
US8817273B2 (en) 2012-04-24 2014-08-26 Nanometrics Incorporated Dark field diffraction based overlay
KR102231730B1 (ko) 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
US9217717B2 (en) * 2012-12-17 2015-12-22 Kla-Tencor Corporation Two dimensional optical detector with multiple shift registers

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001194323A (ja) * 1999-10-29 2001-07-19 Hitachi Ltd パターン欠陥検査方法及びその装置
US20050264813A1 (en) 2003-06-25 2005-12-01 George Giakos Multi-wavelength imaging system
JP2006208380A (ja) 2005-01-24 2006-08-10 Kla-Tencor Technologies Corp 焦点ずれ検出のためのマルチスペクトル技術
JP2010541021A (ja) 2007-10-02 2010-12-24 ケーエルエー−テンカー・コーポレーション 反射対物鏡、ミラーを有する広帯域対物光学系、及び屈折レンズを有する光学撮像システム、及び2つ以上の結像経路を有する広帯域光学撮像システム
US20090141193A1 (en) 2007-10-25 2009-06-04 Kenji Nakayama Image display apparatus
WO2011028807A2 (en) 2009-09-03 2011-03-10 Kla-Tencor Corporation Metrology systems and methods
JP2012083621A (ja) * 2010-10-13 2012-04-26 Olympus Corp 走査型レーザ顕微鏡

Also Published As

Publication number Publication date
JP6353831B2 (ja) 2018-07-04
EP2865003A1 (en) 2015-04-29
TWI609169B (zh) 2017-12-21
KR20210033063A (ko) 2021-03-25
KR20210080592A (ko) 2021-06-30
US10533940B2 (en) 2020-01-14
KR102330743B1 (ko) 2021-11-23
KR20150036214A (ko) 2015-04-07
JP6628835B2 (ja) 2020-01-15
US20150116717A1 (en) 2015-04-30
TW201418661A (zh) 2014-05-16
TWI629448B (zh) 2018-07-11
WO2014004564A1 (en) 2014-01-03
US20190094142A1 (en) 2019-03-28
KR102330741B1 (ko) 2021-11-23
US20180106723A1 (en) 2018-04-19
JP2015524555A (ja) 2015-08-24
JP7046898B2 (ja) 2022-04-04
TW201408988A (zh) 2014-03-01
US10126238B2 (en) 2018-11-13
JP2018179998A (ja) 2018-11-15
US9958385B2 (en) 2018-05-01
JP2020073888A (ja) 2020-05-14

Similar Documents

Publication Publication Date Title
KR102231730B1 (ko) 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
JP4647998B2 (ja) 重ね合わせ誤差検出方法および装置
KR101953235B1 (ko) 펄스형 광 빔의 스펙트럼 특징 추정 방법
JP2022500685A (ja) 位置計測用メトロロジセンサ
US20080130012A1 (en) Device and method for the determination of imaging errors and microlithography projection exposure system
KR20150018456A (ko) 위상-제어 모델 기반 오버레이 측정 시스템 및 방법
KR20150090180A (ko) 동공 결상 산란율 측정을 위한 아포다이제이션
KR20130073886A (ko) 검사 장치 및 검사 방법
CN107121084B (zh) 测量方法和测量程序
JP2003148921A (ja) 形状測定方法及び装置
TW201941001A (zh) 用於確定微影光罩的焦點位置的方法及執行此方法的計量系統
JP2009244227A (ja) 光波干渉測定装置
JP2000146528A (ja) 位置ずれ検査装置の光学的収差測定方法並びに位置ずれ検査方法
JP2006261436A (ja) 信号処理方法及びその装置
JP2007333428A (ja) 形状測定装置及び形状測定方法
TW202530636A (zh) 使用莫爾重疊目標以預測工具所造成之位移
JP2001272214A (ja) 縞解析における縞位相決定方法
WO2025115430A1 (ja) 段差測定装置、画像処理装置、段差測定方法及びプログラム
CN119781150A (zh) 一种三维并行共聚焦荧光显微成像系统及显微成像方法
JP2001349705A (ja) 波長走査レーザ干渉計を用いた周波数解析における誤差補正方法
JP2003240507A (ja) 干渉測定装置
JP2011192998A (ja) 装置、方法及びリソグラフィシステム

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20150126

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180622

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20190820

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200427

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20201218

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20210316

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210318

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210318

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240305

Start annual number: 4

End annual number: 4