KR102206178B1 - 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 - Google Patents

반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 Download PDF

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KR102206178B1
KR102206178B1 KR1020190020196A KR20190020196A KR102206178B1 KR 102206178 B1 KR102206178 B1 KR 102206178B1 KR 1020190020196 A KR1020190020196 A KR 1020190020196A KR 20190020196 A KR20190020196 A KR 20190020196A KR 102206178 B1 KR102206178 B1 KR 102206178B1
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halogen
containing gas
oxide film
gas
film
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KR20190113548A (ko
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모토무 데가이
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가부시키가이샤 코쿠사이 엘렉트릭
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
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KR1020190020196A 2018-03-27 2019-02-21 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 Active KR102206178B1 (ko)

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JPJP-P-2018-059822 2018-03-27
JP2018059822A JP2019175911A (ja) 2018-03-27 2018-03-27 半導体装置の製造方法、基板処理装置およびプログラム

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KR20190113548A KR20190113548A (ko) 2019-10-08
KR102206178B1 true KR102206178B1 (ko) 2021-01-22

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US (1) US20190304791A1 (enExample)
JP (1) JP2019175911A (enExample)
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