CN110310884A - 半导体装置的制造方法、基板处理装置及存储介质 - Google Patents

半导体装置的制造方法、基板处理装置及存储介质 Download PDF

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Publication number
CN110310884A
CN110310884A CN201910140399.6A CN201910140399A CN110310884A CN 110310884 A CN110310884 A CN 110310884A CN 201910140399 A CN201910140399 A CN 201910140399A CN 110310884 A CN110310884 A CN 110310884A
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gas
containing gas
halogen
substrate
film
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Chinese (zh)
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出贝求
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INTERNATIONAL ELECTRIC CO Ltd
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INTERNATIONAL ELECTRIC CO Ltd
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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CN201910140399.6A 2018-03-27 2019-02-22 半导体装置的制造方法、基板处理装置及存储介质 Withdrawn CN110310884A (zh)

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JP2018-059822 2018-03-27
JP2018059822A JP2019175911A (ja) 2018-03-27 2018-03-27 半導体装置の製造方法、基板処理装置およびプログラム

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US (1) US20190304791A1 (enExample)
JP (1) JP2019175911A (enExample)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112164697A (zh) * 2020-09-28 2021-01-01 长江存储科技有限责任公司 一种半导体器件的制备方法、半导体结构

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CN113518836B (zh) * 2019-03-06 2023-11-24 株式会社国际电气 半导体装置的制造方法、记录介质、基板处理装置和基板处理方法
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