TW201942981A - 半導體裝置的製造方法、基板處理裝置及記錄媒體 - Google Patents

半導體裝置的製造方法、基板處理裝置及記錄媒體 Download PDF

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TW201942981A
TW201942981A TW108106401A TW108106401A TW201942981A TW 201942981 A TW201942981 A TW 201942981A TW 108106401 A TW108106401 A TW 108106401A TW 108106401 A TW108106401 A TW 108106401A TW 201942981 A TW201942981 A TW 201942981A
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gas
containing gas
halogen
substrate
film
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TW108106401A
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English (en)
Chinese (zh)
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出貝求
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日商國際電氣股份有限公司
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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TW108106401A 2018-03-27 2019-02-26 半導體裝置的製造方法、基板處理裝置及記錄媒體 TW201942981A (zh)

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JP2018-059822 2018-03-27
JP2018059822A JP2019175911A (ja) 2018-03-27 2018-03-27 半導体装置の製造方法、基板処理装置およびプログラム

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US (1) US20190304791A1 (enExample)
JP (1) JP2019175911A (enExample)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI852043B (zh) * 2021-10-29 2024-08-11 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理方法、基板處理裝置及記錄媒體

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CN113518836B (zh) 2019-03-06 2023-11-24 株式会社国际电气 半导体装置的制造方法、记录介质、基板处理装置和基板处理方法
KR102128328B1 (ko) 2019-09-16 2020-06-30 디씨에스이엔지 주식회사 파이프 가공 캐리지
CN112164697B (zh) * 2020-09-28 2021-12-17 长江存储科技有限责任公司 一种半导体器件的制备方法、半导体结构
JP7324740B2 (ja) 2020-11-25 2023-08-10 株式会社Kokusai Electric 基板処理方法、プログラム、基板処理装置及び半導体装置の製造方法
JP7589578B2 (ja) * 2021-02-16 2024-11-26 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7683383B2 (ja) * 2021-07-27 2025-05-27 東京エレクトロン株式会社 窒化チタン膜を形成する方法、及び窒化チタン膜を形成する装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660660B2 (en) * 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
WO2004040642A1 (en) * 2002-10-29 2004-05-13 Asm America, Inc. Oxygen bridge structures and methods
US20060199399A1 (en) * 2005-02-22 2006-09-07 Muscat Anthony J Surface manipulation and selective deposition processes using adsorbed halogen atoms
US8993055B2 (en) * 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US8778816B2 (en) * 2011-02-04 2014-07-15 Applied Materials, Inc. In situ vapor phase surface activation of SiO2
JP6125846B2 (ja) * 2012-03-22 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
KR101863477B1 (ko) * 2014-03-13 2018-05-31 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
JP6529348B2 (ja) * 2015-06-05 2019-06-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6775322B2 (ja) * 2015-09-25 2020-10-28 東京エレクトロン株式会社 ＴｉＯＮ膜の成膜方法
JP6436887B2 (ja) 2015-09-30 2018-12-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
JP6910118B2 (ja) * 2016-08-05 2021-07-28 東京エレクトロン株式会社 成膜方法および成膜システム、ならびに表面処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI852043B (zh) * 2021-10-29 2024-08-11 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理方法、基板處理裝置及記錄媒體

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