KR102111833B1 - 스퍼터링 타겟 - Google Patents

스퍼터링 타겟 Download PDF

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KR102111833B1
KR102111833B1 KR1020167035948A KR20167035948A KR102111833B1 KR 102111833 B1 KR102111833 B1 KR 102111833B1 KR 1020167035948 A KR1020167035948 A KR 1020167035948A KR 20167035948 A KR20167035948 A KR 20167035948A KR 102111833 B1 KR102111833 B1 KR 102111833B1
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South Korea
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target
plate
sputtering
target plate
back plate
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KR1020167035948A
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Korean (ko)
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KR20170017936A (ko
Inventor
페터 폴씩
자비네 뵈를레
지크프리트 크라스니처
위르크 하크만
Original Assignee
플란제 콤포지트 마테리얼스 게엠베하
오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘
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Publication of KR20170017936A publication Critical patent/KR20170017936A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
KR1020167035948A 2014-06-27 2015-06-26 스퍼터링 타겟 Active KR102111833B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462017909P 2014-06-27 2014-06-27
US62/017,909 2014-06-27
PCT/EP2015/001298 WO2015197196A1 (de) 2014-06-27 2015-06-26 Sputtering target

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187036111A Division KR20180135120A (ko) 2014-06-27 2015-06-26 스퍼터링 타겟

Publications (2)

Publication Number Publication Date
KR20170017936A KR20170017936A (ko) 2017-02-15
KR102111833B1 true KR102111833B1 (ko) 2020-05-18

Family

ID=53717965

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167035948A Active KR102111833B1 (ko) 2014-06-27 2015-06-26 스퍼터링 타겟
KR1020187036111A Withdrawn KR20180135120A (ko) 2014-06-27 2015-06-26 스퍼터링 타겟

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187036111A Withdrawn KR20180135120A (ko) 2014-06-27 2015-06-26 스퍼터링 타겟

Country Status (10)

Country Link
US (1) US10109468B2 (https=)
EP (1) EP3161180B1 (https=)
JP (1) JP6567048B2 (https=)
KR (2) KR102111833B1 (https=)
CN (1) CN106471151B (https=)
BR (1) BR112016029142A2 (https=)
MX (1) MX380827B (https=)
RU (1) RU2696910C2 (https=)
TW (1) TWI713457B (https=)
WO (1) WO2015197196A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT15050U1 (de) * 2015-12-18 2016-11-15 Plansee Composite Mat Gmbh Beschichtungsquelle mit Strukturierung
CN110670030A (zh) * 2019-09-29 2020-01-10 洛阳丰联科绑定技术有限公司 一种ito拼接型靶材的粘结方法
CN111118459A (zh) * 2019-12-30 2020-05-08 有研亿金新材料有限公司 一种高性能铁磁性靶材的制备方法
KR102707659B1 (ko) * 2021-11-17 2024-09-19 바짐테크놀로지 주식회사 스퍼터링 타겟 접합체
CN114434107A (zh) * 2022-02-15 2022-05-06 株洲火炬安泰新材料有限公司 一种提高ito靶材焊合率的生产加工方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2005213073A (ja) * 2004-01-28 2005-08-11 Kyocera Corp 活性金属を含むロウ材を用いた接合体及びその製造方法
US20130029178A1 (en) 2011-07-27 2013-01-31 Shih-Ying Chang Active solder

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US4209375A (en) * 1979-08-02 1980-06-24 The United States Of America As Represented By The United States Department Of Energy Sputter target
DE2933835C2 (de) * 1979-08-21 1987-02-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Befestigen von in Scheiben- oder Plattenform vorliegenden Targetmaterialien auf Kühlteller für Aufstäubanlagen
US4740429A (en) * 1985-07-22 1988-04-26 Ngk Insulators, Ltd. Metal-ceramic joined articles
JPS62278261A (ja) * 1986-05-26 1987-12-03 Seiko Epson Corp スパツタ用タ−ゲツトの製造方法
JPS63216969A (ja) * 1987-03-05 1988-09-09 Daido Steel Co Ltd 加工方法
JPS63241167A (ja) * 1987-03-30 1988-10-06 Seiko Epson Corp スパツタリング用タ−ゲツト
RU2091501C1 (ru) * 1991-04-22 1997-09-27 Акционерное общество открытого типа "Всероссийский алюминиево-магниевый институт" Способ изготовления мишени для магнетронного распыления из алюминия особой чистоты
RU2068459C1 (ru) * 1991-06-03 1996-10-27 Центральный научно-исследовательский институт технологии судостроения Способ обработки поверхности изделий из стали и сплавов на основе меди
JPH05214518A (ja) * 1992-02-04 1993-08-24 Hitachi Metals Ltd スパッタリングターゲットとバッキングプレートの接合体の矯正方法およびスパッタリングターゲット材
WO2002014571A2 (en) * 2000-08-17 2002-02-21 Tosoh Smd, Inc. High purity sputter targets with target end-of-life indication and method of manufacture
AT4240U1 (de) 2000-11-20 2001-04-25 Plansee Ag Verfahren zur herstellung einer verdampfungsquelle
MY138584A (en) * 2003-10-06 2009-07-31 Heraeus Inc Sputter target having modified surface texture
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RU2305717C2 (ru) * 2005-11-14 2007-09-10 Государственное образовательное учреждение высшего профессионального образования "Московский государственный институт стали и сплавов" (технологический университет) Мишень для получения функциональных покрытий и способ ее изготовления
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CN101879640B (zh) * 2009-05-06 2012-07-25 光洋应用材料科技股份有限公司 陶瓷溅镀靶材组件及其焊合方法
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CN101745710A (zh) * 2010-01-07 2010-06-23 宁波江丰电子材料有限公司 靶材组件的焊接方法
JP5437919B2 (ja) * 2010-06-04 2014-03-12 三井金属鉱業株式会社 Ｉｔｏスパッタリングターゲットおよびその製造方法
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2005213073A (ja) * 2004-01-28 2005-08-11 Kyocera Corp 活性金属を含むロウ材を用いた接合体及びその製造方法
US20130029178A1 (en) 2011-07-27 2013-01-31 Shih-Ying Chang Active solder

Also Published As

Publication number Publication date
MX2016016573A (es) 2017-08-18
JP2017524831A (ja) 2017-08-31
US20170133209A1 (en) 2017-05-11
KR20180135120A (ko) 2018-12-19
KR20170017936A (ko) 2017-02-15
WO2015197196A1 (de) 2015-12-30
BR112016029142A2 (pt) 2017-08-22
JP6567048B2 (ja) 2019-08-28
EP3161180A1 (de) 2017-05-03
CN106471151A (zh) 2017-03-01
MX380827B (es) 2025-03-12
RU2016147509A3 (https=) 2018-11-15
TW201615875A (zh) 2016-05-01
RU2016147509A (ru) 2018-07-27
CN106471151B (zh) 2019-06-18
RU2696910C2 (ru) 2019-08-07
TWI713457B (zh) 2020-12-21
US10109468B2 (en) 2018-10-23
EP3161180B1 (de) 2019-02-06

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