KR102071721B1 - 위상 시프트 마스크 블랭크 및 그 제조 방법, 및 위상 시프트 마스크 - Google Patents

위상 시프트 마스크 블랭크 및 그 제조 방법, 및 위상 시프트 마스크 Download PDF

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KR102071721B1
KR102071721B1 KR1020127029347A KR20127029347A KR102071721B1 KR 102071721 B1 KR102071721 B1 KR 102071721B1 KR 1020127029347 A KR1020127029347 A KR 1020127029347A KR 20127029347 A KR20127029347 A KR 20127029347A KR 102071721 B1 KR102071721 B1 KR 102071721B1
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phase shift
shift mask
film
transition metal
light
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KR20130103314A (ko
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오사무 노자와
히로아끼 시시도
가즈야 사까이
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
KR1020127029347A 2010-04-09 2011-04-08 위상 시프트 마스크 블랭크 및 그 제조 방법, 및 위상 시프트 마스크 Active KR102071721B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010090435 2010-04-09
JPJP-P-2010-090435 2010-04-09
PCT/JP2011/002090 WO2011125337A1 (ja) 2010-04-09 2011-04-08 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスク

Related Child Applications (1)

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KR1020187010644A Division KR102008857B1 (ko) 2010-04-09 2011-04-08 위상 시프트 마스크 블랭크 및 그 제조 방법, 및 위상 시프트 마스크

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KR20130103314A KR20130103314A (ko) 2013-09-23
KR102071721B1 true KR102071721B1 (ko) 2020-01-30

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KR1020127029347A Active KR102071721B1 (ko) 2010-04-09 2011-04-08 위상 시프트 마스크 블랭크 및 그 제조 방법, 및 위상 시프트 마스크
KR1020187010644A Active KR102008857B1 (ko) 2010-04-09 2011-04-08 위상 시프트 마스크 블랭크 및 그 제조 방법, 및 위상 시프트 마스크

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US (2) US8999609B2 (https=)
JP (2) JP5313401B2 (https=)
KR (2) KR102071721B1 (https=)
CN (2) CN105739233B (https=)
TW (2) TWI588593B (https=)
WO (1) WO2011125337A1 (https=)

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JP5286455B1 (ja) * 2012-03-23 2013-09-11 Ｈｏｙａ株式会社 マスクブランク、転写用マスクおよびこれらの製造方法
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KR102166222B1 (ko) * 2013-01-15 2020-10-15 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법
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KR102254035B1 (ko) * 2016-08-26 2021-05-20 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크 및 반도체 디바이스의 제조 방법
JP6677139B2 (ja) * 2016-09-28 2020-04-08 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6733464B2 (ja) 2016-09-28 2020-07-29 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP6947207B2 (ja) * 2016-09-28 2021-10-13 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びハーフトーン位相シフト型フォトマスク
JP6740107B2 (ja) * 2016-11-30 2020-08-12 Hoya株式会社 マスクブランク、転写用マスク及び半導体デバイスの製造方法
KR102688948B1 (ko) * 2017-09-21 2024-07-29 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법
US20200379338A1 (en) * 2017-12-26 2020-12-03 Hoya Corporation Mask blank, phase shift mask, and method of manufacturing semiconductor device
JP7297692B2 (ja) * 2019-02-28 2023-06-26 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法、および表示装置の製造方法
JP2021170128A (ja) * 2019-10-01 2021-10-28 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びハーフトーン位相シフト型フォトマスク
JP7280297B2 (ja) 2021-02-03 2023-05-23 アルバック成膜株式会社 マスクブランクス及びフォトマスク
JP7280296B2 (ja) 2021-02-03 2023-05-23 アルバック成膜株式会社 マスクブランクス及びフォトマスク
JP2022118976A (ja) 2021-02-03 2022-08-16 アルバック成膜株式会社 マスクブランクス及びフォトマスク

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Publication number Publication date
KR20130103314A (ko) 2013-09-23
JP5313401B2 (ja) 2013-10-09
TWI519888B (zh) 2016-02-01
CN102834773B (zh) 2016-04-06
JP5758448B2 (ja) 2015-08-05
CN102834773A (zh) 2012-12-19
US9436079B2 (en) 2016-09-06
CN105739233A (zh) 2016-07-06
US8999609B2 (en) 2015-04-07
WO2011125337A1 (ja) 2011-10-13
CN105739233B (zh) 2019-11-05
TW201142486A (en) 2011-12-01
JPWO2011125337A1 (ja) 2013-07-08
US20130071777A1 (en) 2013-03-21
KR20180041266A (ko) 2018-04-23
TWI588593B (zh) 2017-06-21
KR102008857B1 (ko) 2019-08-09
TW201610559A (zh) 2016-03-16
US20150168823A1 (en) 2015-06-18
JP2013254206A (ja) 2013-12-19

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