KR101969334B1 - 발광 소자 및 이를 구비한 발광 장치 - Google Patents

발광 소자 및 이를 구비한 발광 장치 Download PDF

Info

Publication number
KR101969334B1
KR101969334B1 KR1020110119823A KR20110119823A KR101969334B1 KR 101969334 B1 KR101969334 B1 KR 101969334B1 KR 1020110119823 A KR1020110119823 A KR 1020110119823A KR 20110119823 A KR20110119823 A KR 20110119823A KR 101969334 B1 KR101969334 B1 KR 101969334B1
Authority
KR
South Korea
Prior art keywords
layer
electrode
light emitting
semiconductor layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110119823A
Other languages
English (en)
Korean (ko)
Other versions
KR20130054041A (ko
Inventor
강필근
최희석
최석범
이주원
황덕기
한영주
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110119823A priority Critical patent/KR101969334B1/ko
Priority to JP2012249944A priority patent/JP6138458B2/ja
Priority to EP16164199.8A priority patent/EP3067942B1/en
Priority to US13/677,566 priority patent/US9397261B2/en
Priority to EP12192706.5A priority patent/EP2595204B1/en
Priority to CN201210466543.3A priority patent/CN103117347B/zh
Publication of KR20130054041A publication Critical patent/KR20130054041A/ko
Priority to US14/618,599 priority patent/US9893235B2/en
Application granted granted Critical
Publication of KR101969334B1 publication Critical patent/KR101969334B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020110119823A 2011-11-16 2011-11-16 발광 소자 및 이를 구비한 발광 장치 Expired - Fee Related KR101969334B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020110119823A KR101969334B1 (ko) 2011-11-16 2011-11-16 발광 소자 및 이를 구비한 발광 장치
JP2012249944A JP6138458B2 (ja) 2011-11-16 2012-11-14 発光装置及びこれを備えた発光装置
US13/677,566 US9397261B2 (en) 2011-11-16 2012-11-15 Light emitting device and light emitting apparatus having the same
EP12192706.5A EP2595204B1 (en) 2011-11-16 2012-11-15 Light emitting diode and light emitting apparatus having the same
EP16164199.8A EP3067942B1 (en) 2011-11-16 2012-11-15 Light emitting device
CN201210466543.3A CN103117347B (zh) 2011-11-16 2012-11-16 发光器件以及具有该发光器件的发光装置
US14/618,599 US9893235B2 (en) 2011-11-16 2015-02-10 Light emitting device and light emitting apparatus having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110119823A KR101969334B1 (ko) 2011-11-16 2011-11-16 발광 소자 및 이를 구비한 발광 장치

Publications (2)

Publication Number Publication Date
KR20130054041A KR20130054041A (ko) 2013-05-24
KR101969334B1 true KR101969334B1 (ko) 2019-04-17

Family

ID=47713757

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110119823A Expired - Fee Related KR101969334B1 (ko) 2011-11-16 2011-11-16 발광 소자 및 이를 구비한 발광 장치

Country Status (5)

Country Link
US (2) US9397261B2 (enExample)
EP (2) EP2595204B1 (enExample)
JP (1) JP6138458B2 (enExample)
KR (1) KR101969334B1 (enExample)
CN (1) CN103117347B (enExample)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8716723B2 (en) * 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
KR101803569B1 (ko) * 2011-05-24 2017-12-28 엘지이노텍 주식회사 발광 소자
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
TWI606618B (zh) * 2012-01-03 2017-11-21 Lg伊諾特股份有限公司 發光裝置
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
JP5881560B2 (ja) * 2012-08-30 2016-03-09 株式会社東芝 半導体発光装置及びその製造方法
CN103066178B (zh) * 2012-12-29 2015-07-29 映瑞光电科技(上海)有限公司 一种倒装光子晶体led芯片及其制造方法
KR101504331B1 (ko) * 2013-03-04 2015-03-19 삼성전자주식회사 발광소자 패키지
TWI661578B (zh) 2013-06-20 2019-06-01 Epistar Corporation 發光裝置及發光陣列
KR102075655B1 (ko) * 2013-06-24 2020-02-10 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
TWI540766B (zh) * 2013-07-10 2016-07-01 隆達電子股份有限公司 發光二極體封裝結構
US9548247B2 (en) * 2013-07-22 2017-01-17 Infineon Technologies Austria Ag Methods for producing semiconductor devices
CN105453277B (zh) * 2013-07-30 2018-01-30 国立研究开发法人情报通信研究机构 半导体发光元件及其制造方法
JP6045999B2 (ja) 2013-07-31 2016-12-14 株式会社東芝 半導体発光装置及びその製造方法
CN103474559A (zh) * 2013-09-02 2013-12-25 四川柏狮光电技术有限公司 荧光板材及其制备方法
KR102165264B1 (ko) * 2013-10-10 2020-10-13 삼성전자 주식회사 아연 입자를 함유하는 비전도성 폴리머 막, 비전도성 폴리머 페이스트, 이들을 포함하는 반도체 패키지, 및 반도체 패키지의 제조 방법
TWI533478B (zh) * 2013-10-14 2016-05-11 新世紀光電股份有限公司 覆晶式發光二極體封裝結構
JP6387780B2 (ja) 2013-10-28 2018-09-12 日亜化学工業株式会社 発光装置及びその製造方法
KR102125450B1 (ko) 2013-12-05 2020-06-22 엘지이노텍 주식회사 광변환부재 및 이를 포함하는 조명장치
KR102099441B1 (ko) * 2013-12-19 2020-04-09 엘지이노텍 주식회사 발광소자
TWI552386B (zh) * 2013-12-20 2016-10-01 新世紀光電股份有限公司 半導體發光結構及半導體封裝結構
US20150200336A1 (en) * 2014-01-10 2015-07-16 Cree, Inc. Wafer level contact pad standoffs with integrated reflector
CN105023983A (zh) * 2014-04-24 2015-11-04 展晶科技(深圳)有限公司 覆晶式半导体发光元件及其制造方法
CN105098025A (zh) 2014-05-07 2015-11-25 新世纪光电股份有限公司 发光装置
US10147854B2 (en) * 2014-05-10 2018-12-04 Sensor Electronic Technology, Inc. Packaging for ultraviolet optoelectronic device
US20160064631A1 (en) * 2014-05-10 2016-03-03 Sensor Electronic Technology, Inc. Packaging for Ultraviolet Optoelectronic Device
WO2015175369A1 (en) 2014-05-10 2015-11-19 Sensor Electronic Technology, Inc. Packaging for ultraviolet optoelectronic device
CN105098020B (zh) * 2014-05-14 2018-11-09 中国科学院苏州纳米技术与纳米仿生研究所 Led发光器件
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
KR102019914B1 (ko) 2014-06-11 2019-11-04 엘지이노텍 주식회사 발광 소자
KR102407827B1 (ko) * 2015-01-27 2022-06-13 서울바이오시스 주식회사 발광 소자
TWI641285B (zh) 2014-07-14 2018-11-11 新世紀光電股份有限公司 發光模組與發光單元的製作方法
US9373761B2 (en) * 2014-09-23 2016-06-21 Osram Sylvania Inc. Patterned thin-film wavelength converter and method of making same
TWI556469B (zh) * 2014-12-19 2016-11-01 固美實國際股份有限公司 圖案化發光二極體基板
KR102309670B1 (ko) * 2014-12-24 2021-10-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지 및 조명시스템
JP2016149462A (ja) * 2015-02-12 2016-08-18 豊田合成株式会社 発光素子およびその製造方法
CN104638085A (zh) * 2015-02-13 2015-05-20 常州乐迪电子科技有限公司 一种新型倒装芯片及其制作与封装方法
DE102015102365A1 (de) * 2015-02-19 2016-08-25 Osram Opto Semiconductors Gmbh Strahlungskörper und Verfahren zur Herstellung eines Strahlungskörpers
JP2016163015A (ja) * 2015-03-05 2016-09-05 旭化成株式会社 紫外線発光素子及びその製造方法
JP6555907B2 (ja) * 2015-03-16 2019-08-07 アルパッド株式会社 半導体発光装置
JP6668608B2 (ja) * 2015-04-27 2020-03-18 日亜化学工業株式会社 発光装置の製造方法
CN104993031B (zh) * 2015-06-12 2018-03-06 映瑞光电科技(上海)有限公司 高压倒装led芯片及其制造方法
KR20170003102A (ko) * 2015-06-30 2017-01-09 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지
DE102015112280B4 (de) * 2015-07-28 2026-07-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit einem metallischen Träger und Verfahren zur Herstellung von Bauelementen
TW201712890A (zh) * 2015-07-29 2017-04-01 日機裝股份有限公司 發光元件的製造方法
JP6546660B2 (ja) * 2015-08-03 2019-07-17 創光科学株式会社 窒化物半導体発光素子用の基台及びその製造方法
KR102373677B1 (ko) 2015-08-24 2022-03-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
CN106486576B (zh) * 2015-08-31 2018-10-26 展晶科技(深圳)有限公司 发光二极管元件
KR102415075B1 (ko) * 2015-09-30 2022-06-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
KR102481646B1 (ko) * 2015-11-12 2022-12-29 삼성전자주식회사 반도체 발광소자 패키지
US10892390B2 (en) * 2016-02-05 2021-01-12 Lg Innotek Co., Ltd. Light-emitting element and light-emitting element package including the same
WO2017154973A1 (ja) * 2016-03-08 2017-09-14 株式会社 東芝 半導体発光素子およびその製造方法
US10529696B2 (en) * 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
CN106025010A (zh) * 2016-07-19 2016-10-12 厦门乾照光电股份有限公司 一种基于导电dbr结构的倒装led芯片及其制作方法
JP6871706B2 (ja) * 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
CN114725267B (zh) * 2016-11-03 2024-10-01 苏州立琻半导体有限公司 半导体器件和包括该半导体器件的半导体器件封装
US11282992B2 (en) * 2016-11-22 2022-03-22 National Institute Of Information And Communications Technology Light-emitting module provided with semiconductor light-emitting element that emits deep ultraviolet light
TWI790984B (zh) * 2017-01-26 2023-01-21 晶元光電股份有限公司 發光元件
TWI759289B (zh) * 2017-03-21 2022-04-01 晶元光電股份有限公司 發光元件
US10497845B2 (en) 2017-03-27 2019-12-03 Seoul Semiconductor Co., Ltd. Display apparatus and method of manufacturing the same
JP7050270B2 (ja) * 2017-03-31 2022-04-08 国立研究開発法人情報通信研究機構 半導体発光素子及び発光モジュール
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
CN107706290A (zh) * 2017-10-10 2018-02-16 青岛杰生电气有限公司 一种用于倒装芯片的紫外发光二极管及衬底刻蚀方法
DE102017125821B4 (de) * 2017-11-06 2025-06-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US10910535B2 (en) 2017-11-08 2021-02-02 SemiLEDs Optoelectronics Co., Ltd. Method for making light emitting device LED arrays
US12364079B2 (en) 2017-11-08 2025-07-15 SemiLEDs Optoelectronics Co., Ltd. Method for making light emitting device (LED) arrays and electronic products using a temporary substrate and a carrier substrate
CN108346675B (zh) * 2017-12-28 2024-06-25 海迪科(南通)光电科技有限公司 发光二极管led或激光二极管ld阵列器件及其制备方法
CN108461388B (zh) * 2018-03-26 2020-11-06 云谷(固安)科技有限公司 一种衬底结构、加工方法和显示装置
CN111326609B (zh) * 2018-12-14 2021-05-25 成都辰显光电有限公司 发光器件、发光器件的制作方法及显示装置
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
TWI690102B (zh) * 2019-01-04 2020-04-01 友達光電股份有限公司 發光裝置及其製造方法
JP7260828B2 (ja) * 2019-01-11 2023-04-19 日亜化学工業株式会社 発光装置
JP7037070B2 (ja) * 2019-01-11 2022-03-16 日亜化学工業株式会社 発光装置の製造方法
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
TWI687677B (zh) * 2019-01-23 2020-03-11 國立清華大學 光學基板及其製備方法
WO2020153191A1 (ja) 2019-01-25 2020-07-30 ソニー株式会社 発光デバイスおよび画像表示装置
CN121583214A (zh) 2019-01-29 2026-02-27 奥斯兰姆奥普托半导体股份有限两合公司 视频墙、驱动器电路、控制系统及其方法
US11610868B2 (en) * 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
DE112020000762A5 (de) 2019-02-11 2021-10-28 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement, optoelektronische anordnung und verfahren
US11437551B2 (en) * 2019-03-19 2022-09-06 Seoul Viosys Co., Ltd. Light emitting device package and application thereof
CN111033737B (zh) * 2019-03-25 2024-02-06 湖北三安光电有限公司 微发光组件、微发光二极管及微发光二极管转印方法
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
KR102914276B1 (ko) 2019-04-23 2026-01-16 에이엠에스-오스람 인터내셔널 게엠베하 Led 모듈, led 디스플레이 모듈 및 그 제조 방법
CN211629110U (zh) * 2019-05-14 2020-10-02 首尔伟傲世有限公司 发光封装件
CN114127966A (zh) 2019-05-14 2022-03-01 奥斯兰姆奥普托半导体股份有限两合公司 照明单元、制造照明单元的方法、用于光电组件的转换元件、具有发光二极管和转换元件的辐射源、耦合输出结构和光电设备
DE112020002482A5 (de) 2019-05-23 2022-02-17 Osram Opto Semiconductors Gmbh Beleuchtungsanordnung, lichtführungsanordnung und verfahren
KR102763367B1 (ko) 2019-05-30 2025-02-07 서울바이오시스 주식회사 수직형 발광 다이오드
US11152540B2 (en) 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
US12199215B2 (en) * 2019-08-21 2025-01-14 Industrial Technology Research Institute Light-emitting device and display apparatus
CN110379899A (zh) * 2019-08-26 2019-10-25 厦门乾照光电股份有限公司 一种led芯片及其制作方法
US12294039B2 (en) 2019-09-20 2025-05-06 Osram Opto Semiconductors Gmbh Optoelectronic component, semiconductor structure and method
TWI714319B (zh) 2019-10-28 2020-12-21 錼創顯示科技股份有限公司 微型發光二極體裝置
CN110752228B (zh) * 2019-10-28 2022-05-24 錼创显示科技股份有限公司 微型发光二极管装置
US11817526B2 (en) 2019-10-29 2023-11-14 Creeled, Inc. Texturing for high density pixelated-LED chips and chip array devices
KR102751538B1 (ko) * 2019-11-27 2025-01-10 삼성전자주식회사 반도체 패키지
CN111261766A (zh) * 2020-01-21 2020-06-09 厦门乾照光电股份有限公司 一种倒装薄膜led芯片结构及其制备方法
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
CN112968092A (zh) * 2020-11-19 2021-06-15 重庆康佳光电技术研究院有限公司 发光器件、其制作方法及具有其的显示面板
KR102801918B1 (ko) * 2021-04-30 2025-04-29 삼성디스플레이 주식회사 표시 장치
CN113299809B (zh) * 2021-05-24 2023-04-18 錼创显示科技股份有限公司 微型发光元件及其显示装置
TWI760231B (zh) * 2021-05-24 2022-04-01 錼創顯示科技股份有限公司 微型發光元件及其顯示裝置
CN115720466A (zh) * 2021-08-24 2023-02-28 三星显示有限公司 显示装置
TWI811810B (zh) * 2021-10-13 2023-08-11 錼創顯示科技股份有限公司 微型發光二極體顯示面板
CN113937197B (zh) * 2021-10-13 2024-11-15 錼创显示科技股份有限公司 微型发光二极管显示面板
US20230411562A1 (en) * 2022-06-21 2023-12-21 Creeled, Inc. Light extraction structures for light-emitting diode chips and related methods
CN115911206A (zh) * 2022-12-29 2023-04-04 天津三安光电有限公司 半导体发光元件及其发光装置
CN116092382A (zh) * 2022-12-30 2023-05-09 上海天马微电子有限公司 一种可折叠膜材结构及其制备方法、显示面板和显示装置
US20240266462A1 (en) * 2023-02-02 2024-08-08 Creeled, Inc. Laser etching for light-emitting diode devices and related methods
CN116544321B (zh) * 2023-07-06 2024-04-02 季华实验室 发光芯片的制备方法、发光芯片以及显示面板
WO2026108020A1 (en) * 2024-11-22 2026-05-28 Jade Bird Display (shanghai) Limited Micro led structure, epitaxial layer and manufacturing method for the epitaxial layer
US20260150472A1 (en) * 2024-11-26 2026-05-28 Seoul Viosys Co., Ltd. Light emitting apparatus and vehicle including the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007929A (ja) * 2001-06-27 2003-01-10 Nichia Chem Ind Ltd 半導体チップとその製造方法
JP2008047861A (ja) * 2006-08-14 2008-02-28 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
JP2011187679A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 半導体発光装置及びその製造方法
JP2011199193A (ja) * 2010-03-23 2011-10-06 Toshiba Corp 発光装置及びその製造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160028A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd 電極の接続方法
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
JP4214704B2 (ja) 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
KR100499129B1 (ko) * 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
US7179670B2 (en) 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
TW200614548A (en) 2004-07-09 2006-05-01 Matsushita Electric Industrial Co Ltd Light-emitting device
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
KR100638813B1 (ko) * 2005-04-15 2006-10-27 삼성전기주식회사 플립칩형 질화물 반도체 발광소자
KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
EP2087563B1 (en) * 2006-11-15 2014-09-24 The Regents of The University of California Textured phosphor conversion layer light emitting diode
KR100941766B1 (ko) * 2007-08-08 2010-02-11 한국광기술원 패드 재배열을 이용한 반도체 발광 다이오드 및 그의제조방법
US7977695B2 (en) * 2007-09-21 2011-07-12 Lg Innotek Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
US9024340B2 (en) * 2007-11-29 2015-05-05 Nichia Corporation Light emitting apparatus and method for producing the same
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
CN101971368A (zh) * 2008-03-13 2011-02-09 昭和电工株式会社 半导体发光元件及其制造方法
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
JP2010021261A (ja) * 2008-07-09 2010-01-28 Toshiba Corp 光半導体素子の製造方法、光半導体素子及び光半導体装置の製造方法
JP4799606B2 (ja) 2008-12-08 2011-10-26 株式会社東芝 光半導体装置及び光半導体装置の製造方法
JP5395097B2 (ja) * 2009-01-13 2014-01-22 株式会社小糸製作所 発光モジュールおよび灯具ユニット
KR101134810B1 (ko) 2009-03-03 2012-04-13 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP2011009572A (ja) * 2009-06-26 2011-01-13 Citizen Electronics Co Ltd フリップチップ実装型led及びフリップチップ実装型ledの製造方法。
US8629473B2 (en) 2009-08-13 2014-01-14 Toyoda Gosei Co., Ltd. Semiconductor light-emitting element, semiconductor light-emitting device, method for producing semiconductor light-emitting element, method for producing semiconductor light-emitting device, illumination device using semiconductor light-emitting device, and electronic apparatus
US8471280B2 (en) * 2009-11-06 2013-06-25 Koninklijke Philips Electronics N.V. Silicone based reflective underfill and thermal coupler
JPWO2011071100A1 (ja) * 2009-12-11 2013-04-22 豊田合成株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
TW201123548A (en) 2009-12-25 2011-07-01 Ind Tech Res Inst A multi-layer stacked LED package
JP5398644B2 (ja) * 2010-06-07 2014-01-29 株式会社東芝 半導体発光装置を用いた光源装置
JP4875185B2 (ja) * 2010-06-07 2012-02-15 株式会社東芝 光半導体装置
KR101009744B1 (ko) * 2010-07-26 2011-01-19 (주)더리즈 반도체 발광소자 및 그 제조방법
CN102130285B (zh) * 2010-11-03 2012-12-26 映瑞光电科技(上海)有限公司 发光二极管及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007929A (ja) * 2001-06-27 2003-01-10 Nichia Chem Ind Ltd 半導体チップとその製造方法
JP2008047861A (ja) * 2006-08-14 2008-02-28 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
JP2011187679A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 半導体発光装置及びその製造方法
JP2011199193A (ja) * 2010-03-23 2011-10-06 Toshiba Corp 発光装置及びその製造方法

Also Published As

Publication number Publication date
EP2595204A2 (en) 2013-05-22
US9397261B2 (en) 2016-07-19
JP2013106048A (ja) 2013-05-30
EP3067942A1 (en) 2016-09-14
KR20130054041A (ko) 2013-05-24
CN103117347B (zh) 2017-10-20
US20150179884A1 (en) 2015-06-25
US20130119424A1 (en) 2013-05-16
CN103117347A (zh) 2013-05-22
US9893235B2 (en) 2018-02-13
EP2595204A3 (en) 2014-01-29
EP3067942B1 (en) 2019-10-09
JP6138458B2 (ja) 2017-05-31
EP2595204B1 (en) 2016-06-01

Similar Documents

Publication Publication Date Title
JP6138458B2 (ja) 発光装置及びこれを備えた発光装置
CN105140380B (zh) 发光器件和具有该发光器件的发光设备
US9595640B2 (en) Light emitting device, light emitting device package and light emitting module
KR101210028B1 (ko) 발광소자, 발광 모듈 및 발광 소자 제조방법
KR101262509B1 (ko) 발광소자, 발광 모듈 및 발광 소자 제조방법
KR101900276B1 (ko) 발광 소자 및 이를 구비한 발광 장치
KR101895297B1 (ko) 발광 소자 및 이를 구비한 발광 장치
KR101979942B1 (ko) 발광 소자 패키지 및 이를 구비한 조명 시스템
KR101940617B1 (ko) 발광 소자 패키지 및 발광 모듈
KR20140095722A (ko) 발광 소자 및 이를 구비한 조명 장치
KR101901845B1 (ko) 발광 소자, 발광 소자 패키지 및 발광 모듈
KR101858254B1 (ko) 발광소자, 발광 모듈 및 발광 소자 제조방법
KR101943824B1 (ko) 발광소자, 발광 소자 패키지 및 조명 시스템
KR102175338B1 (ko) 발광소자 패키지
KR101900269B1 (ko) 발광 소자 및 이를 구비한 발광 장치
KR101901850B1 (ko) 발광 소자, 발광 소자 패키지 및 발광 모듈
KR101901839B1 (ko) 발광소자, 발광 소자 패키지 및 발광 모듈
KR102175343B1 (ko) 발광소자 패키지

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250411

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250411

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250411