KR101943074B1 - 기상 성장 장치의 오염량 측정 방법 및 에피택셜 웨이퍼의 제조 방법 - Google Patents

기상 성장 장치의 오염량 측정 방법 및 에피택셜 웨이퍼의 제조 방법 Download PDF

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KR101943074B1
KR101943074B1 KR1020157004828A KR20157004828A KR101943074B1 KR 101943074 B1 KR101943074 B1 KR 101943074B1 KR 1020157004828 A KR1020157004828 A KR 1020157004828A KR 20157004828 A KR20157004828 A KR 20157004828A KR 101943074 B1 KR101943074 B1 KR 101943074B1
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wafer
heat treatment
contamination
vapor
vapor phase
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KR20150066515A (ko
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타케시 아라이
사토시 이나다
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신에쯔 한도타이 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H01L22/12—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095—Semiconductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/279—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Food Science & Technology (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
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  • Biochemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing & Machinery (AREA)
KR1020157004828A 2012-10-16 2013-09-26 기상 성장 장치의 오염량 측정 방법 및 에피택셜 웨이퍼의 제조 방법 Active KR101943074B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-229198 2012-10-16
JP2012229198A JP5884705B2 (ja) 2012-10-16 2012-10-16 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法
PCT/JP2013/076030 WO2014061413A1 (ja) 2012-10-16 2013-09-26 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法

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KR20150066515A KR20150066515A (ko) 2015-06-16
KR101943074B1 true KR101943074B1 (ko) 2019-01-28

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Country Link
US (1) US9437505B2 (https=)
JP (1) JP5884705B2 (https=)
KR (1) KR101943074B1 (https=)
CN (1) CN104620355B (https=)
DE (1) DE112013005872B4 (https=)
TW (1) TWI520246B (https=)
WO (1) WO2014061413A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5741467B2 (ja) * 2012-02-07 2015-07-01 信越半導体株式会社 気相成長装置の清浄度評価方法
JP5783312B1 (ja) 2014-09-18 2015-09-24 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及び気相成長装置
JP6327094B2 (ja) * 2014-10-02 2018-05-23 株式会社Sumco 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
JP6361482B2 (ja) * 2014-11-26 2018-07-25 株式会社Sumco 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
KR101701629B1 (ko) * 2015-07-28 2017-02-01 주식회사 엘지실트론 에피택셜 웨이퍼를 제조하기 위한 리액터의 재가동 준비 방법
CN107881491A (zh) * 2016-09-30 2018-04-06 非视觉污染分析科学技术有限公司 基板污染物分析装置及基板污染物分析方法
CN108426978B (zh) * 2017-02-14 2021-01-01 无锡华瑛微电子技术有限公司 晶圆局部处理方法
JP6739386B2 (ja) * 2017-03-28 2020-08-12 東京エレクトロン株式会社 基板処理システム、制御装置、成膜方法及びプログラム
JP6711327B2 (ja) * 2017-07-18 2020-06-17 株式会社Sumco シリコンウェーハ製造工程の評価方法およびシリコンウェーハの製造方法
KR101988121B1 (ko) * 2017-08-23 2019-06-11 에스케이실트론 주식회사 실리콘웨이퍼의 금속불순물 검출방법
JP6477854B1 (ja) 2017-12-22 2019-03-06 株式会社Sumco 気相成長装置の汚染管理方法及びエピタキシャルウェーハの製造方法
US10695804B2 (en) * 2018-01-25 2020-06-30 Applied Materials, Inc. Equipment cleaning apparatus and method
JP7342695B2 (ja) * 2019-12-26 2023-09-12 株式会社Sumco エピタキシャルウェーハ製造システム及び製造方法
CN112683988B (zh) * 2020-12-28 2023-06-02 上海新昇半导体科技有限公司 一种晶圆中金属杂质的检测方法
CN113782465B (zh) * 2021-11-11 2022-02-18 西安奕斯伟材料科技有限公司 用于检测晶圆表面金属的方法
CN120709137A (zh) * 2025-06-30 2025-09-26 瀚天天成电子科技(厦门)股份有限公司 一种降低碳化硅外延表面pit缺陷的生长方法

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JP2863563B2 (ja) * 1989-09-14 1999-03-03 信越半導体株式会社 化合物半導体基板表面の重金属汚染評価方法
JP3285723B2 (ja) * 1994-11-17 2002-05-27 信越半導体株式会社 半導体熱処理用治具及びその表面処理方法
US6749687B1 (en) * 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
DE69906475T2 (de) 1998-01-09 2004-03-18 Asm America Inc., Phoenix In situ wachstum von oxid und silizium schichten
US20050136657A1 (en) * 2002-07-12 2005-06-23 Tokyo Electron Limited Film-formation method for semiconductor process
JP4393071B2 (ja) * 2002-07-12 2010-01-06 東京エレクトロン株式会社 成膜方法
JP2006228782A (ja) 2005-02-15 2006-08-31 Sumco Corp 枚葉式エピタキシャルウェーハ製造装置およびその保守方法
JP5024224B2 (ja) 2008-08-06 2012-09-12 信越半導体株式会社 シリコン基板の評価方法、汚染検出方法及びエピタキシャル基板の製造方法
JP5407212B2 (ja) * 2008-08-06 2014-02-05 株式会社Ｓｕｍｃｏ 熱処理炉評価方法および半導体ウェーハの製造方法
JP5413342B2 (ja) 2010-09-27 2014-02-12 株式会社Ｓｕｍｃｏ シリコンウェーハ表層部のエッチング方法およびシリコンウェーハの金属汚染分析方法

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JP2014082324A (ja) 2014-05-08
TW201421595A (zh) 2014-06-01
WO2014061413A1 (ja) 2014-04-24
DE112013005872T5 (de) 2015-08-20
KR20150066515A (ko) 2015-06-16
JP5884705B2 (ja) 2016-03-15
US20150243566A1 (en) 2015-08-27
US9437505B2 (en) 2016-09-06
DE112013005872B4 (de) 2022-06-30
TWI520246B (zh) 2016-02-01
CN104620355A (zh) 2015-05-13
CN104620355B (zh) 2017-03-15

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