JP5884705B2 - 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法 - Google Patents

気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法 Download PDF

Info

Publication number
JP5884705B2
JP5884705B2 JP2012229198A JP2012229198A JP5884705B2 JP 5884705 B2 JP5884705 B2 JP 5884705B2 JP 2012229198 A JP2012229198 A JP 2012229198A JP 2012229198 A JP2012229198 A JP 2012229198A JP 5884705 B2 JP5884705 B2 JP 5884705B2
Authority
JP
Japan
Prior art keywords
vapor phase
growth apparatus
contamination
phase growth
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012229198A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014082324A (ja
JP2014082324A5 (https=
Inventor
荒井　剛
剛 荒井
聡史 稲田
聡史 稲田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012229198A priority Critical patent/JP5884705B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to CN201380046910.7A priority patent/CN104620355B/zh
Priority to US14/426,968 priority patent/US9437505B2/en
Priority to KR1020157004828A priority patent/KR101943074B1/ko
Priority to DE112013005872.3T priority patent/DE112013005872B4/de
Priority to PCT/JP2013/076030 priority patent/WO2014061413A1/ja
Priority to TW102135981A priority patent/TWI520246B/zh
Publication of JP2014082324A publication Critical patent/JP2014082324A/ja
Publication of JP2014082324A5 publication Critical patent/JP2014082324A5/ja
Application granted granted Critical
Publication of JP5884705B2 publication Critical patent/JP5884705B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095—Semiconductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/279—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Food Science & Technology (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing & Machinery (AREA)
JP2012229198A 2012-10-16 2012-10-16 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法 Active JP5884705B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012229198A JP5884705B2 (ja) 2012-10-16 2012-10-16 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法
US14/426,968 US9437505B2 (en) 2012-10-16 2013-09-26 Method of measuring contamination amount of vapor phase growth apparatus, and method of manufacturing epitaxial wafer
KR1020157004828A KR101943074B1 (ko) 2012-10-16 2013-09-26 기상 성장 장치의 오염량 측정 방법 및 에피택셜 웨이퍼의 제조 방법
DE112013005872.3T DE112013005872B4 (de) 2012-10-16 2013-09-26 Verfahren zum Messen des Verunreinigungsbetrags einer Gasphasenwachstumsvorrichtung und Verfahren zur Herstellung eines Epitaxiewafers
CN201380046910.7A CN104620355B (zh) 2012-10-16 2013-09-26 气相生长装置的污染量测定方法及外延晶片的制造方法
PCT/JP2013/076030 WO2014061413A1 (ja) 2012-10-16 2013-09-26 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法
TW102135981A TWI520246B (zh) 2012-10-16 2013-10-04 Method for measuring the amount of contaminants in gas phase growth device and manufacturing method of epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012229198A JP5884705B2 (ja) 2012-10-16 2012-10-16 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2014082324A JP2014082324A (ja) 2014-05-08
JP2014082324A5 JP2014082324A5 (https=) 2014-10-30
JP5884705B2 true JP5884705B2 (ja) 2016-03-15

Family

ID=50487986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012229198A Active JP5884705B2 (ja) 2012-10-16 2012-10-16 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法

Country Status (7)

Country Link
US (1) US9437505B2 (https=)
JP (1) JP5884705B2 (https=)
KR (1) KR101943074B1 (https=)
CN (1) CN104620355B (https=)
DE (1) DE112013005872B4 (https=)
TW (1) TWI520246B (https=)
WO (1) WO2014061413A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5741467B2 (ja) * 2012-02-07 2015-07-01 信越半導体株式会社 気相成長装置の清浄度評価方法
JP5783312B1 (ja) 2014-09-18 2015-09-24 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及び気相成長装置
JP6327094B2 (ja) * 2014-10-02 2018-05-23 株式会社Sumco 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
JP6361482B2 (ja) * 2014-11-26 2018-07-25 株式会社Sumco 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
KR101701629B1 (ko) * 2015-07-28 2017-02-01 주식회사 엘지실트론 에피택셜 웨이퍼를 제조하기 위한 리액터의 재가동 준비 방법
CN107881491A (zh) * 2016-09-30 2018-04-06 非视觉污染分析科学技术有限公司 基板污染物分析装置及基板污染物分析方法
CN108426978B (zh) * 2017-02-14 2021-01-01 无锡华瑛微电子技术有限公司 晶圆局部处理方法
JP6739386B2 (ja) * 2017-03-28 2020-08-12 東京エレクトロン株式会社 基板処理システム、制御装置、成膜方法及びプログラム
JP6711327B2 (ja) * 2017-07-18 2020-06-17 株式会社Sumco シリコンウェーハ製造工程の評価方法およびシリコンウェーハの製造方法
KR101988121B1 (ko) * 2017-08-23 2019-06-11 에스케이실트론 주식회사 실리콘웨이퍼의 금속불순물 검출방법
JP6477854B1 (ja) 2017-12-22 2019-03-06 株式会社Sumco 気相成長装置の汚染管理方法及びエピタキシャルウェーハの製造方法
US10695804B2 (en) * 2018-01-25 2020-06-30 Applied Materials, Inc. Equipment cleaning apparatus and method
JP7342695B2 (ja) * 2019-12-26 2023-09-12 株式会社Sumco エピタキシャルウェーハ製造システム及び製造方法
CN112683988B (zh) * 2020-12-28 2023-06-02 上海新昇半导体科技有限公司 一种晶圆中金属杂质的检测方法
CN113782465B (zh) * 2021-11-11 2022-02-18 西安奕斯伟材料科技有限公司 用于检测晶圆表面金属的方法
CN120709137A (zh) * 2025-06-30 2025-09-26 瀚天天成电子科技(厦门)股份有限公司 一种降低碳化硅外延表面pit缺陷的生长方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2863563B2 (ja) * 1989-09-14 1999-03-03 信越半導体株式会社 化合物半導体基板表面の重金属汚染評価方法
JP3285723B2 (ja) * 1994-11-17 2002-05-27 信越半導体株式会社 半導体熱処理用治具及びその表面処理方法
US6749687B1 (en) * 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
DE69906475T2 (de) 1998-01-09 2004-03-18 Asm America Inc., Phoenix In situ wachstum von oxid und silizium schichten
US20050136657A1 (en) * 2002-07-12 2005-06-23 Tokyo Electron Limited Film-formation method for semiconductor process
JP4393071B2 (ja) * 2002-07-12 2010-01-06 東京エレクトロン株式会社 成膜方法
JP2006228782A (ja) 2005-02-15 2006-08-31 Sumco Corp 枚葉式エピタキシャルウェーハ製造装置およびその保守方法
JP5024224B2 (ja) 2008-08-06 2012-09-12 信越半導体株式会社 シリコン基板の評価方法、汚染検出方法及びエピタキシャル基板の製造方法
JP5407212B2 (ja) * 2008-08-06 2014-02-05 株式会社Ｓｕｍｃｏ 熱処理炉評価方法および半導体ウェーハの製造方法
JP5413342B2 (ja) 2010-09-27 2014-02-12 株式会社Ｓｕｍｃｏ シリコンウェーハ表層部のエッチング方法およびシリコンウェーハの金属汚染分析方法

Also Published As

Publication number Publication date
JP2014082324A (ja) 2014-05-08
TW201421595A (zh) 2014-06-01
WO2014061413A1 (ja) 2014-04-24
KR101943074B1 (ko) 2019-01-28
DE112013005872T5 (de) 2015-08-20
KR20150066515A (ko) 2015-06-16
US20150243566A1 (en) 2015-08-27
US9437505B2 (en) 2016-09-06
DE112013005872B4 (de) 2022-06-30
TWI520246B (zh) 2016-02-01
CN104620355A (zh) 2015-05-13
CN104620355B (zh) 2017-03-15

Similar Documents

Publication Publication Date Title
JP5884705B2 (ja) 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法
US10176987B2 (en) SiC epitaxial wafer and method for manufacturing the same
JP5839343B2 (ja) 気相成長装置の汚染検出方法及びエピタキシャルウェーハの製造方法
JP5880974B2 (ja) エピタキシャル成長装置の汚染検出方法及びエピタキシャルウェーハの製造方法
TWI713946B (zh) 氣相成長裝置的汙染管理方法及磊晶晶圓的製造方法
JP5609755B2 (ja) エピタキシャルウェーハの製造方法
JP6098997B2 (ja) エピタキシャル成長装置の汚染評価方法及びエピタキシャルウェーハの製造方法
JP5228857B2 (ja) シリコンエピタキシャルウェーハの製造方法
JP6327094B2 (ja) 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
JP5936007B2 (ja) 気相エピタキシャル成長装置の汚染評価方法及びエピタキシャルウェーハの製造方法
JP5794212B2 (ja) 気相成長装置の汚染評価方法及びシリコンエピタキシャルウェーハの製造方法
JP6489198B1 (ja) エピタキシャルウェーハの汚染評価方法および該方法を用いたエピタキシャルウェーハの製造方法
JP6024595B2 (ja) ガスフィルターのライフ管理方法
JP6361482B2 (ja) 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
JP6475609B2 (ja) エピタキシャルウェーハの製造方法
JP2015138897A (ja) 気相成長装置の清掃又は点検方法
JP2015035460A (ja) エピタキシャルウェーハの製造方法
JP2010050282A (ja) シリコン単結晶基板の評価方法及びエピタキシャル基板の製造方法
WO2007032180A1 (ja) エピタキシャルウエーハの製造方法及びそれにより製造されたエピタキシャルウエーハ
JP2018157138A (ja) エピタキシャルウェーハの製造方法
JP5454298B2 (ja) 半導体基板の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140916

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160112

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160125

R150 Certificate of patent or registration of utility model

Ref document number: 5884705

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250